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    SS TRANSISTOR Search Results

    SS TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    SS TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    sk 8120S

    Abstract: IC SI-8050S 5V 3A sk 8050s IC SK 8050S 133uh 8033ss sk 8150s SANKEN Battery Chargers Boost Converter
    Text: SI-8000S,SS Application Note Full Mold Type Chopper Type Switching Regulator IC SI-8000S, SS Series 9th Edition April 2010 SANKEN ELECTRIC CO., LTD. EI00062-7 SI-8000S, SS －－－ Contents －－－ 1. General Description 1-1 Features －－－－－－－－－－


    Original     		SI-8000S SI-8000S, EI00062-7 EI00062-7 sk 8120S IC SI-8050S 5V 3A sk 8050s IC SK 8050S 133uh 8033ss sk 8150s SANKEN Battery Chargers Boost Converter PDF

    delta dvp plc communication cable wiring diagram

    Abstract: DVP14SS11R2 DVP14SS11T2 DVP-14SS DVP14SS11R DVP14SS11R2 plc DVP14SS11R2 programming plc manual DVP14SS11R2 DVP-14SS11r2 plc extension dvp-ss
    Text: Model DVP-SS uses DC input power. Therefore, make sure that DVP-SS is connected to terminals 24V DC and 0V power range 20.4 ~ 28.8V DC when the power is ON. DVP-SS will stop the operation and the output will be OFF whenever the power input is lower than 20.4V DC. Consequently, the ERROR LED will blink swiftly.


    Original     		DVP14SS11R/T A/250V 26MHz 24VDC -11-R DVP14SS11T2 DVP14SS11R2 delta dvp plc communication cable wiring diagram DVP14SS11R2 DVP14SS11T2 DVP-14SS DVP14SS11R DVP14SS11R2 plc DVP14SS11R2 programming plc manual DVP14SS11R2 DVP-14SS11r2 plc extension dvp-ss PDF

    RC-3813

    Abstract: Tantalum Solid Electrolytic Capacitors
    Text: SS-213 R2 printer's spr. 1/9/01 11:59 AM Page 1 KOA SPEER ELECTRONICS, INC. SS-213 R2 Chip Tantalum Solid Electrolytic Capacitor Type TMX CERTIFIED 1. General 1-1 Range of Application This document applies to miniaturized chip tantalum solid electrolytic capacitors for applications


    Original     		SS-213 RC-3813 Tantalum Solid Electrolytic Capacitors PDF

    3M Touch Systems

    Abstract: ECEA1ES
    Text: Aluminum Electrolytic Capacitor/SS Radial lead type Series: NEW • Features Discontinued Type :A SS Endurance :85°C 2000 h ■ Specifications Operating temp. range Rated W.V. range -40 to + 85°C 6.3 to 50 V .DC Nominal cap. range Capacitance 47 to 4700 µ F


    Original     		120Hz/ 03per 120Hz 2000hrs RCR-2367 3M Touch Systems ECEA1ES PDF

    71A10

    Abstract: 1D104
    Text: SS-212 R4 4 pager 1/9/01 1:16 PM Page 1 KOA SPEER ELECTRONICS, INC. SS-212 R4 Chip Tantalum Solid Electrolytic Capacitor Type TMU CERTIFIED 1. General 1-1 Scope of Application This document applies to miniaturized chip tantalum solid electrolytic capacitors for applications


    Original     		SS-212 71A10 1D104 PDF

    Ultrasonic S

    Abstract: 3M Touch Systems SU SERIES CAPACITOR ALUMINIUM
    Text: Aluminum Electrolytic Capacitor/SS Radial lead type Series: NEW • Features Discontinued Type :A SS Endurance :85°C 2000 h ■ Specifications Operating temp. range Rated W.V. range -40 to + 85°C 6.3 to 50 V .DC Nominal cap. range Capacitance 47 to 4700 µ F


    Original     		120Hz/ 03per 120Hz 2000hrs RCR-2367 Ultrasonic S 3M Touch Systems SU SERIES CAPACITOR ALUMINIUM PDF

    KBA2338

    Abstract: kB2338A Kingbor JESD78
    Text: Kingbor Technology Co.,Ltd KBA2338 TEL: 86 0755-26508846 FAX:(86)0755-26509052 3 W F ilte rle ss C la ss-D Audio P owe r Am plifie r General Description The kB2338A is a high efficiency, 3W mono class-D audio power amplifier. A low noise, filterless PWM architecture


    Original     		KBA2338 kB2338A 400mW KBA2338 Kingbor JESD78 PDF

    AD7752

    Abstract: AD775JN 74als541n AD775 inverter manual dv 700 74als541 AD775JR AD817 AD822 ad7753
    Text: a FUNCTIONAL BLOCK DIAGRAM V IN AV DD 18 14 15 SWITCH MATRIX FINE COMPARATORS BANK A 23 FINE COMPARATORS BANK B V RBS 22 5 CLOCK LOGIC AV SS 20 21 AV SS 12 CLK 2 8 3-STATE OUTPUT LATCHES CORRECTION LOGIC 17 255 V RB 10 D7 MSB 4 COARSE COMPARATORS LSB MULTIPLEXOR


    Original     		AD775 24-Pin N-24B) R-24A) AD7752 AD775JN 74als541n AD775 inverter manual dv 700 74als541 AD775JR AD817 AD822 ad7753 PDF

    inverter manual dv 700

    Abstract: AD817 74als541 ad775jn c1830
    Text: BACK a FUNCTIONAL BLOCK DIAGRAM V IN AV DD 18 14 15 SWITCH MATRIX FINE COMPARATORS BANK A 23 FINE COMPARATORS BANK B V RBS 22 5 CLOCK LOGIC AV SS 20 21 AV SS 12 CLK 2 8 3-STATE OUTPUT LATCHES CORRECTION LOGIC 17 255 V RB 10 D7 MSB 4 COARSE COMPARATORS LSB MULTIPLEXOR


    Original     		24-Pin AD775 N-24B) R-24A) C1830 inverter manual dv 700 AD817 74als541 ad775jn PDF

    A1534

    Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
    Text: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin


    OCR Scan     		T0-92 T092L: T0220F T0220 T092NL A1534 T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A PDF

    process 65

    Abstract: MMBT3640 PN3640 PN4258
    Text: ss ss M-cr: c ì i m u i . - r r r o r? PN3640 MMBT3640 PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum RdtlflQ S


    OCR Scan     		PN3640 MMBT3640 OT-23 PN4258 process 65 MMBT3640 PN3640 PDF

    D2375

    Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
    Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A


    OCR Scan     		125mW 2SC4627 2SC5021 2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 D2375 D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526 PDF

    12N60FI

    Abstract: 12N60F sth12n60fi 12N60 transistor 12n60 st 12N60 12N-60F STH12N60 12n60 dc GS 069 7.2 24 v
    Text: SGS-THOMSON ELiOT iD SS STH12N60 STH12N60FI N^ CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V STH12N60 STH12N60FI d ss 600 V 600 V R D S (o n Id 0.6 n 0.6 £2 12 A 7 A ; ; . . . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		STH12N60 STH12N60FI ISOWATT218 12N60 12V60/' 12N60FI 12N60F sth12n60fi transistor 12n60 st 12N60 12N-60F 12n60 dc GS 069 7.2 24 v PDF

    Untitled

    Abstract: No abstract text available
    Text: Small Signal Silicon Bipolar Transistors yuu in r * yyR 5ÄÄ SS* Selection Guide .3-2


    OCR Scan     		PDF

    SMPJ177

    Abstract: SMP3330 PJ99 P1086
    Text: 8-94 F 10 Small Outline Surface Mount Package Devices P-C H A N N E L SILICON JU N C TIO N FIELD-EFFECT TRANSISTORS Device Type V g S(OFF) • g ss bvg ss Limits Min (V) m Max @Vgs Min (nA) (V) (V) @IG Id s s Conditions Max Vds b Min Max @VDS (V) (V) (nA)


    OCR Scan     		PDF

    2N3684

    Abstract: 2N3685 2N3686 2N3687 2N4117 2N4117A 2N4118 2N4118A 2N4119 2N4119A
    Text: THOMSON/ DISTRIBUTOR SÖE D T05t,fl73 □00S740 4SD TCSK Discrete Transistors Amplifier Transistors Junction FETs - N-Channel Vp V •d s s mA M ax >GSS pA M ax b v G SS V Min C|ss pF M ax C rss pF M ax -2 .0 -1 .0 -0 .6 -0 .3 -5 .0 -3 .5 -2 .0 -1 .2 -1 0 0


    OCR Scan     		T0Stifl73 00S740 2N3684 2N3685 2N3686 2N3687 2N4117 2N4117A 2N4118 2N4118A 2N4119 2N4119A PDF

    bf 649

    Abstract: BC 247 bo 139 BF139 bf 867 BO30 Bc 649 ESM4091 bc 877 ESM4092
    Text: N channel field effect transistors plastic case Transistors à effet de champ, canal N (boîtier plastique) Case V ( B R )G S S (V) Type Boîtier min * 2 U 38 19 T O 92o -2 5 2 N I5425 F 139 Bo — 3(3 2 N $ 4 26 F 13 9 0o -30 *G SS (nA) ( p A )# <D SS (m A)


    OCR Scan     		F139BÂ Bo-30_ ESM4091 ESM4092 ESM4303 Bo-30 bf 649 BC 247 bo 139 BF139 bf 867 BO30 Bc 649 bc 877 PDF

    NF510

    Abstract: 2N4393 2N4092 2N3971 2N4860A 2N5654 2N3966 2N3970 2N3972 2N4091
    Text: N-Channel Junction Field Effect Transistors SWITCHING/CHOPPING M A X IM U M R A T IN G S V ' d ss mA TYPE GS(off) (V) rds(on) Ciss Crss (ohms) (pF) t on 'o ff (pF) (ns) (ns) max max CASE NO. A Pd (mW) BV G SS (V) min max min max max max max 10 5 3 30 50


    OCR Scan     		O-92DD NF510 2N3966 O-72DH 2N3970 2N3971 2N3972 2N4091 2N4393 2N4092 2N4860A 2N5654 PDF

    Z 400 M

    Abstract: No abstract text available
    Text: 71C 0 4 9 9 7 0 T - 3 S '- s jT THOMSOK SEMICONDUCTORS S G S-THOMSON ~~ ?1C D | 7^ 237 00DM ^7~S | ~ n channel field effect transistors Type* V BR G S S min <GSS m ax • d ss min m a x VGSoH min m ax rDS on m ax »off m ax C lis s m ax C 1 2 SS m ax (V )


    OCR Scan     		200/xA BCV27 BCV47 BCV46 Z 400 M PDF

    toshiba j200

    Abstract: 2SJ200 2SK1529 SC-65
    Text: TOSHIBA 2SJ200 SILICON P CHANNEL MOS TYPE 2SJ200 Unit in mm HIGH PO W ER AM PLIFIER APPLICATION 1 5.9 M A X. 03.2 ±0.2 X / O — , I- |l| r Is 2.° * M A X IM U M RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Drain-Souree Voltage vd ss Gate-Souree Voltage vg ss


    OCR Scan     		2SJ200 2SK1529 toshiba j200 2SJ200 SC-65 PDF

    Untitled

    Abstract: No abstract text available
    Text: W91510N SERIES sS SS s E le c tro n ic s C orp . TONE/PULSE DIALER WITH HANDFREE AND SAVE FUNCTIONS GENERAL DESCRIPTION The W91510N series are Si-gate CMOS ICs that provide the necessary signals for tone or pulse dialing. The W91510N series provide one-key redial, handfree dialing, key tone, save, and redial


    OCR Scan     		W91510N 32-digit PDF

    2x1 multiplexer

    Abstract: No abstract text available
    Text: H O N E YüJELL/SS ELEK-i MIL ~Ü3 D Ë J 4 5 5 1 0 7 2 O O O O S B b 1 "|~ Honeyw ell 4551872 HO NE Y WE LL / SS HC20000 ELEK, M IL 03E 00236 D Preliminary HIGH-PERFORMANCE CMOS GATE ARRAY FEATURES • Performance Optimized Series of 1.2-Micron CMOS Gate Arrays


    OCR Scan     		HC20000 MIL-M-38510 Comm05 2x1 multiplexer PDF

    SS6-8212

    Abstract: No abstract text available
    Text: m SS-5-8212" SS-6-8212* / S S -7 -8 2 1 2 t/ s 3H ¿ =r ' 00265 0 Dual 16-Bit Static Shift Registers &/ FEATURES PIN CON FIGURATIONS • T T L /D T L C om patible C lock Input m TTLyDTL C om patible Data— N o externai interfacing co m po n e nts required


    OCR Scan     		SS-5-8212" SS-6-8212* 16-Bit SS-5-6212. SS-6-8212 SS-7-8212 SL-5-S212, SL-7-6212 SL-6-8212 SS6-8212 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistors PHP6ND50E, PHB6ND50E FREDFET, Avalanche energy rated_ FEATURES • • • • • • SYMBOL QUICK REFERENCE DATA V,D SS Repetitive Avalanche Rated Fast switching


    OCR Scan     		PHP6ND50E, PHB6ND50E PHB6ND50E PDF