9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
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2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FK14SM-10 HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm .4.5. 15.9MAX. 1.5 SS <t>3.2 ib n p 4.4 1.0 5.45 lhd 0.6 J bdj _4 Q w r Vd ss . 5 0 0 V
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FK14SM-10
150ns
-100A/u
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PDF
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IRF1010
Abstract: IRFBC40LC 3S4M
Text: International i»R Rectifier IRFBC40LC HEXFET Power MOSFET • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced C ss. Coss, Crss Extremely High Frequency Operation Repetitive Avalanche Rated V d ss
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OCR Scan
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IRFBC40LC
O-22D-AS
O-22QAB
IRF1010
D-S380
963064i
IRFBC40LC
3S4M
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PDF
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S-247
Abstract: No abstract text available
Text: HiPerFET Power MOSFETs IXFX90N20Q IXFX90N20QS D SS ID25 R Q C la ss DS on 200 V 90 A 22 m il trr < 200 ns N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt,Lowtrr Sym bol Test Conditions Maxim um R atings V* DSS Voo« TJ = 25°C to 150°C 200
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OCR Scan
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00A/ns
IXFX90N20Q
IXFX90N20QS
247TM
247TM
PLUS247
S-247
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS10KM-14A HIGH-SPEED SWITCHING USE FS10KM-14A • V d SS . 7 0 0 V • TDS ON (MAX) . 1 .3 0
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OCR Scan
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FS10KM-14A
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PDF
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10B4 diode
Abstract: Fast Recovery Bridge Rectifier, 60A, 600V 25CC OMS38L60ML OMS60N10ML OMS75N06ML
Text: Preliminary Data Sheet OO MM SS 67 O5 NN0IO6 MM LL QO MM SS 33 28 LF 66 00 MM LL 3-PHASE BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt, 25 To 75 Amp Modules, 3-Phase Bridge Configuration FEATURES • • • • • Isolated Heat Sink
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OCR Scan
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OMS75N06ML,
OMS38L60ML,
OMS60N10ML,
OMS32F60ML
S75N06M
S60N10M
75N06ML
60N10ML
38L60ML
32F60ML
10B4 diode
Fast Recovery Bridge Rectifier, 60A, 600V
25CC
OMS38L60ML
OMS60N10ML
OMS75N06ML
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PDF
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FTO-220
Abstract: STO-220 Shindengen
Text: Power M O SFET E-pack series SMD N-Channel, Enhancement type Part No. EIAJ No. ton toff Tch V d ss V g ss Id Pt (max) (typ) (typ) [°C] [V] [V] [A] [W] [fi] [ns] [ns] 57 55 30 37 121 75 2SK1861 1931 1194 1195 1672 Electrical Characteristics Absolute Maximum Ratings
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OCR Scan
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2SK1861
2SK2279
2SJ365
STO-220
FTO-220
STO-220 Shindengen
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PDF
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2168A
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS5UM-9 HIGH-SPEED SWITCHING USE FS5UM-9 i «V o ss . 450V j • TDS ON (MAX) . 1 .4Í2 i • ID
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OCR Scan
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Condit101
2168A
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PDF
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Untitled
Abstract: No abstract text available
Text: I MITSUBISHI Neh POWER MOSFET FS30SMH-2 HIGH-SPEED SWITCHING USE OUTLINE DRAWING • 2.5V DRIVE • V D SS .100V • rDS ON (MAX) .93mQ • Id . 30A
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OCR Scan
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FS30SMH-2
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PDF
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JI32
Abstract: fs50smh-3
Text: MITSUBISHI Neh POWER MOSFET FS50SMH-3 HIGH-SPEED SWITCHING USE FS50SMH-3 • 2.5V D R IVE • VD SS . 1 5 0 V • rDS ON (MAX) . 3 0 m £2
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OCR Scan
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FS50SMH-3
130ns
571CH23
JI32
fs50smh-3
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS5KMJ-06 HIGH-SPEED SWITCHING USE FS5KMJ-06 + 4 * ' 4V DRIVE ' V d ss .60V . . 0.14£2 . 5A ' Id . ' Integrated Fast Recovery Diode TYP. .45ns V is o .
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OCR Scan
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FS5KMJ-06
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FK10UM-9 HIGH-SPEED SWITCHING USE FK10UM-9 O UTLINE DRAW ING Dimensions in mm LU U q w Q w r Vd ss . 450V rDS ON (
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OCR Scan
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FK10UM-9
150ns
O-220
-250V.
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS5KM-3 HIGH-SPEED SWITCHING USE FS5KM-3 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 S 2.3 ±0.2 / • 10V DRIVE • VD SS . 150V • rDS ON (MAX) .
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OCR Scan
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O-220FN
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS70KMH-03 HIGH-SPEED SWITCHING USE FS70KMH-03 • 2.5V DRIVE • VD SS . • rDS ON (MAX) • ' ID I • Integrated Fast Recovery Diode (TYP.) • V is o .
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FS70KMH-03
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS5AS-2 HIGH-SPEED SWITCHING USE FS5AS-2 ' 10V DRIVE ' V ' rDS ON (MAX) . d ss .1 o o v . 0.47Í2 . ' Id . ' Integrated Fast Recovery Diode (TYP.) . 5 A 80ns APPLICATION
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OCR Scan
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS10UMJ-03 HIGH-SPEED SWITCHING USE FS10UMJ-03 OUTLINE DRAWING Dimensions in mm 4.5 1.3 LU U LU g w e O' 4V DRIVE Vd ss .3 0V rDS ON (
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OCR Scan
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FS10UMJ-03
75mi2
O-220
Vgss101
571q-123
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PDF
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Untitled
Abstract: No abstract text available
Text: I MITSUBISHI Neh POWER MOSFET I FS30UM-03 ! § i s HIGH-SPEED SWITCHING USE FS30UM-03 • 10V DRIVE • V D SS .30V • rDS ON (MAX) . 46mQ • I D . 3 0 A
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OCR Scan
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FS30UM-03
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PDF
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H12B
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS2KMJ-3 HIGH-SPEED SWITCHING USE FS2KMJ-3 OUTLINE DRAWING D im en sio n s in mm 10 ±0.3 2.6 ±0.2 • 4V DRIVE • Vd ss . •150V • rDS ON (MAX) .
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OCR Scan
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O-220FN
H12B
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS30ASH-06 HIGH-SPEED SWITCHING USE FS30ASH-06 ' 2.5V DRIVE . ' V ' rDS ON (MAX) . d ss ' Id . ' Integrated Fast Recovery Diode (TYP.) .60V . 30mi2 .30A 65ns APPLICATION M otor control, Lamp control, Solenoid control
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OCR Scan
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FS30ASH-06
30mi2
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS50KMH-06 HIGH-SPEED SWITCHING USE FS50KMH-06 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2 .8 1 0 .2 2.5V DRIVE V d ss . 6 0 V rDS ON (M A X ) .
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OCR Scan
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FS50KMH-06
O-220FN
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS2ASJ-3 HIGH-SPEED SWITCHING USE FS2ASJ-3 # t ' 4 V D R IV E ' V . .150V ' rDS ON (MAX) . .0.75Í2 ' Id . .2 A ' Integrated Fast Recovery Diode (TYP.) d ss 65ns APPLICATION
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OCR Scan
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS10ASH-03 HIGH-SPEED SWITCHING USE FS10ASH-03 ' 2.5V DRIVE . ' V ' rDS ON (MAX) . d ss ' Id . ' Integrated Fast Recovery Diode (TYR) .30V . 92mi2 .10A 35ns APPLICATION M otor control, Lamp control, Solenoid control
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OCR Scan
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FS10ASH-03
92mi2
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS10ASJ-03 HIGH-SPEED SWITCHING USE FS10ASJ-03 ' 4V DRIVE . ' V ' rDS ON (MAX) . d ss ' Id . ' Integrated Fast Recovery Diode (TYP.) .30V . 75mi2 .10A 35ns APPLICATION M otor control, Lamp control, Solenoid control
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OCR Scan
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FS10ASJ-03
75mi2
571Q-22
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS10SM-10 HIGH-SPEED SWITCHING USE FS10SM-10 OUTLINE DRAWING Dimensions in mm 4.5 \d r 4.4 2.3 O 2' < GATE DRAIN SOURCE DRAIN • V d SS . 500V • rDS ON (MAX) .0.90Q
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OCR Scan
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FS10SM-10
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PDF
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