SRM2264LT Search Results

SRM2264LT Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SRM2264LTM10		EPSON	CMOS 64K-BIT STATIC RAM		Original	PDF
SRM2264LTM12		EPSON	CMOS 64K-BIT STATIC RAM		Original	PDF

SRM2264LT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
srm2264lct Contextual Info: SRM2264LTio/i2 HIGH SPEED CMOS 64K-BIT STATIC RAM • Industrial Temperature Range • DESCRIPTION The SRM2264Lio/i2 is an 8,192 words x 8 bits asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage	OCR Scan	SRM2264LTio/i2 64K-BIT SRM2264Lio/i2 SRM2264LTio 100ns SRM2264LT 120ns SRM2264LTio/i2 28-pin srm2264lct	PDF
SRM2264LM10 Contextual Info: SRM2264L10/12 CMOS 64K-BIT STATIC RAM • Low Supply Current • Access Time 100ns/120ns • 8,192 Words x 8 Bits, Asynchronous • DESCRIPTION The SRM2264L10/12 is an 8,192-word x 8-bit asynchronous, static, random access m em ory on a m onolithic CM OS chip. Its very low standby power requirem ent makes it ideal for applications requir	OCR Scan	SRM2264L10/12 64K-BIT 100ns/120ns SRM2264L10/12 192-word 2264L-0 2264L-2 P2-28pin* SRM2264LM10/12 SRM2264L10/12. SRM2264LM10	PDF
SRM2264LCT Abstract: 2264L SRM2264 Contextual Info: SRM2264L,m CMOS 64K-BIT STATIC RAM • Low Supply Current • Access Time 100ns/120ns • 8,192 Words x 8-Bit Asynchronous DESCRIPTION The SRM2264Lio/i2 is an 8,192 wordsx 8-bit asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage with	OCR Scan	SRM2264L 64K-BIT 100ns/120ns SRM2264Lio/i2 SRM2264Lio 100ns 120ns 100ns SRM2264LCT 2264L SRM2264	PDF
upd444c Abstract: SRM2016C12 SRM2264LC10 SRM2264lm10 SRM2B256SLMX55 SRM20100LRMT85 SRM2016C-12 SRM2016C SRM2264LCT10 SRM20100LMT Contextual Info: 1997 DATABOOK SRAM PRODUCTS 000-97-MEM-1.0 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: 408 922-0200 • Fax: (408) 922-0238 1 THIS PAGE INTENTIONALLY BLANK 2 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: (408) 922-0200 • Fax: (408) 922-0238	Original	000-97-MEM-1 SRM2016C10/12 16K-Bit SRM2016C/MT12 SRM2264L10/12 64K-Bit -44pin-R1 81max upd444c SRM2016C12 SRM2264LC10 SRM2264lm10 SRM2B256SLMX55 SRM20100LRMT85 SRM2016C-12 SRM2016C SRM2264LCT10 SRM20100LMT	PDF
SRM2264lm10 Abstract: SRM2264L10 SRM2264L DIP-28 SRM2264L12 Contextual Info: SRM2264L10/12 CMOS 64K-BIT STATIC RAM ● Low Supply Current ● Access Time 100ns/120ns ● 8,192 Words x 8 Bits, Asynchronous • DESCRIPTION The SRM2264L10/12 is an 8,192-word × 8-bit asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage with back-up batteries. The asynchronous and static nature of the memory	Original	SRM2264L10/12 64K-BIT 100ns/120ns SRM2264L10/12 192-word SRM2264L10 100pF 000-97-MEM-1 SRM2264lm10 SRM2264L10 SRM2264L DIP-28 SRM2264L12	PDF