SRM21016LLTT12 Search Results

SRM21016LLTT12 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SRM21016LLTT12		S-MOS Systems	1M-Bit Static RAM		Original	PDF

SRM21016LLTT12 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SRM21016LLTT12 Abstract: No abstract text available Text: PF865-03 SRM21016LLTT12 1M-Bit Static RAM ge lta Vo ion w t Lo pera cts O odu Pr ● Wide Voltage Operation and Low Current Consumption ● Access Time 120ns 2.7V ● 65,536 Words X 16-Bit Asynchtonous ● Wide Temperature Range • DESCRIPTION The SRM21016LLTT12 is a 65,536 words x 16-bit asynchronous, random access memory on a monolithic	Original	PDF	PF865-03 SRM21016LLTT12 120ns 16-Bit SRM21016LLTT12
upd444c Abstract: SRM2016C12 SRM2264LC10 SRM2264lm10 SRM2B256SLMX55 SRM20100LRMT85 SRM2016C-12 SRM2016C SRM2264LCT10 SRM20100LMT Text: 1997 DATABOOK SRAM PRODUCTS 000-97-MEM-1.0 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: 408 922-0200 • Fax: (408) 922-0238 1 THIS PAGE INTENTIONALLY BLANK 2 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: (408) 922-0200 • Fax: (408) 922-0238	Original	PDF	000-97-MEM-1 SRM2016C10/12 16K-Bit SRM2016C/MT12 SRM2264L10/12 64K-Bit -44pin-R1 81max upd444c SRM2016C12 SRM2264LC10 SRM2264lm10 SRM2B256SLMX55 SRM20100LRMT85 SRM2016C-12 SRM2016C SRM2264LCT10 SRM20100LMT
SRM21016LLTT12 Abstract: 8ie22 Text: PF865-01 EPSON SRM21016LLTT i2 1 M-Bit Static RAM • W ide Voltage Operation and Low Current Consumption • Access Tim e 120ns 2.7V • 65,536 Words X 16-Bit Asynchtonous • W ide Tem perature Range I D E S C R IP T IO N The SRM21016LLTT12 is a 65,536 words x 16-bit asynchronous, random access memory on a monolithic	OCR Scan	PDF	PF865-01 SRM21016LLTT12 120ns 16-Bit SRM21016LLTT12 -44pin 740ma> -44pin-R1 8ie22
Untitled Abstract: No abstract text available Text: S R M 2 1 0 1 6 L L T T 1 2 1M-BIT STATIC RAM • • W ide Voltage O peration and Low Current Consum ption • Access Tim e 120ns 2.7V • 65,536 W ords x 16-Bit Asynchronous • Industrial Tem perature Range DESCRIPTION The SRM21016LLTT12 is a 65,536 w ords x 16-bit asychronous, random access m em ory on a m ono	OCR Scan	PDF	120ns 16-Bit SRM21016LLTT12 21016LLTT12 000-97-MEM-1 SRM21016LLTT12 -44pin -44pin-R
UPD444C Abstract: SRM2264LC10 hm6116 SRM2264LCT10 Text: Short Form Matrix Static Memory Line-Up The static nature of the memory requires no external clock or refreshing circuit and its very low power consumption makes it ideal for applications requiring non-volatile storage with back-up batteries. S-MOS Systems, Inc. •150 RlverOaks Parkway • San Jose, CA 95134 *Tel: 408 922-0200 • Fax: (408) 922-0238	OCR Scan	PDF	DIP-24pin OP2-24pin DIP-24pln OP-24pin DIP-28pin OP-28pin UPD444C SRM2264LC10 hm6116 SRM2264LCT10
SRM2B256SLMX55 Abstract: SRM2016C Text: Table of Contents Table of Contents SRAM Products Short Form M atrix. 5 SRM2016C10/12.16K-Bit Static RAM. 7 SRM2016C/MT12.16K-Bit Static	OCR Scan	PDF	SRM2016C10/12. 16K-Bit SRM2016C/MT12. SRM2264L10 64K-Bit SRM2264LCT10/12. SRM2B256SLMX55/70/10. 256K-Bit SRM2B256SLMX55 SRM2016C