SRM21016LLTT12
Abstract: No abstract text available
Text: PF865-03 SRM21016LLTT12 1M-Bit Static RAM ge lta Vo ion w t Lo pera cts O odu Pr ● Wide Voltage Operation and Low Current Consumption ● Access Time 120ns 2.7V ● 65,536 Words X 16-Bit Asynchtonous ● Wide Temperature Range • DESCRIPTION The SRM21016LLTT12 is a 65,536 words x 16-bit asynchronous, random access memory on a monolithic
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PF865-03
SRM21016LLTT12
120ns
16-Bit
SRM21016LLTT12
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upd444c
Abstract: SRM2016C12 SRM2264LC10 SRM2264lm10 SRM2B256SLMX55 SRM20100LRMT85 SRM2016C-12 SRM2016C SRM2264LCT10 SRM20100LMT
Text: 1997 DATABOOK SRAM PRODUCTS 000-97-MEM-1.0 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: 408 922-0200 • Fax: (408) 922-0238 1 THIS PAGE INTENTIONALLY BLANK 2 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: (408) 922-0200 • Fax: (408) 922-0238
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000-97-MEM-1
SRM2016C10/12
16K-Bit
SRM2016C/MT12
SRM2264L10/12
64K-Bit
-44pin-R1
81max
upd444c
SRM2016C12
SRM2264LC10
SRM2264lm10
SRM2B256SLMX55
SRM20100LRMT85
SRM2016C-12
SRM2016C
SRM2264LCT10
SRM20100LMT
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SRM21016LLTT12
Abstract: 8ie22
Text: PF865-01 EPSON SRM21016LLTT i2 1 M-Bit Static RAM • W ide Voltage Operation and Low Current Consumption • Access Tim e 120ns 2.7V • 65,536 Words X 16-Bit Asynchtonous • W ide Tem perature Range I D E S C R IP T IO N The SRM21016LLTT12 is a 65,536 words x 16-bit asynchronous, random access memory on a monolithic
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PF865-01
SRM21016LLTT12
120ns
16-Bit
SRM21016LLTT12
-44pin
740ma>
-44pin-R1
8ie22
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Untitled
Abstract: No abstract text available
Text: S R M 2 1 0 1 6 L L T T 1 2 1M-BIT STATIC RAM • • W ide Voltage O peration and Low Current Consum ption • Access Tim e 120ns 2.7V • 65,536 W ords x 16-Bit Asynchronous • Industrial Tem perature Range DESCRIPTION The SRM21016LLTT12 is a 65,536 w ords x 16-bit asychronous, random access m em ory on a m ono
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120ns
16-Bit
SRM21016LLTT12
21016LLTT12
000-97-MEM-1
SRM21016LLTT12
-44pin
-44pin-R
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UPD444C
Abstract: SRM2264LC10 hm6116 SRM2264LCT10
Text: Short Form Matrix Static Memory Line-Up The static nature of the memory requires no external clock or refreshing circuit and its very low power consumption makes it ideal for applications requiring non-volatile storage with back-up batteries. S-MOS Systems, Inc. •150 RlverOaks Parkway • San Jose, CA 95134 *Tel: 408 922-0200 • Fax: (408) 922-0238
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DIP-24pin
OP2-24pin
DIP-24pln
OP-24pin
DIP-28pin
OP-28pin
UPD444C
SRM2264LC10
hm6116
SRM2264LCT10
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SRM2A256SLC
Abstract: SRM20100LLM srm2264lct SRM2A256LLCT SRM20100LL SRM2264LC SRM2564C SRM20100LMT tl512 SRM20116
Text: Section 4 Memories SRM2264LC SRM2264LCT 64K 8KX8 Access tim e ns Part number Capacity(bits) Organization(bits) - SRM2464MT* 'K K K SRM2564C >r S afe RAM — I 32KX9 K 7 0 /8 5 /1 0 0 •SRM2A256LLMX 7 0 /8 5 /1 0 0 i SRM2A256LLCT 85/100 ■SRM2B256SLMX 5 5 /7 0 /1 0 0
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SRM2264LC
SRM2264LCT
SRM2464MT*
SRM2564C
SRM2A256SLC
SRM2A256LLMX
SRM2A256LLCT
SRM2B256SLMX
32KX8
SRM2B256SLMT
SRM2A256SLC
SRM20100LLM
srm2264lct
SRM2A256LLCT
SRM20100LL
SRM2564C
SRM20100LMT
tl512
SRM20116
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SRM2B256SLMX55
Abstract: SRM2016C
Text: Table of Contents Table of Contents SRAM Products Short Form M atrix. 5 SRM2016C10/12.16K-Bit Static RAM. 7 SRM2016C/MT12.16K-Bit Static
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SRM2016C10/12.
16K-Bit
SRM2016C/MT12.
SRM2264L10
64K-Bit
SRM2264LCT10/12.
SRM2B256SLMX55/70/10.
256K-Bit
SRM2B256SLMX55
SRM2016C
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