SRM20W Search Results

Contextual Info: PF873-03 SRM20W117LLTT/SLTT2/7 1M-Bit Static RAM e g olta wV r Loon e p Su erati ts Op oduc Pr ●Super Low Voltage Operation and Low Current Consumption ●Access Time 120ns 1.8V / 70ns (2.7V) ●65,536 WordsX16-Bit Asynchtonous ●Wide Temperature Range

Contextual Info: EPSON PF873-03 SRM20W117LLTX/SLTX2/7 1 M-Bit Static RAM 1S u pe r Low Voltage O peration and Low C urrent C onsum ption 1A ccess Tim e 12 0ns 1 .8V / 70ns (2.7V) 165,536 W o rd sX I 6-B it A synchtonous 1W ide T em perature Range I DESCRIPTION The S R M 20W 117LLTX/SLTX2/7 is a 65,536 w ords x 16-bit asynchronous, random access m em ory on a m onolithic

SRM20W116LLTT2

Abstract: SRM20W116LLTT7
Contextual Info: EPSON PF869-03 SRM20W116 LLTT2/7 1M-Bit Static RAM • • • • Super Low Voltage Operation and Low Current Consumption Access Time 120ns 1.8V / 70ns(2.7V) 65,536 Words X16-Bit Asynchtonous Wide Temperature Range DESCRIPTION The SRM20W116LLTT2/7 is a 65,536 words x16-bit asynchronous, random access memory on a monolithic

Contextual Info: SRM20W116LLTT2/7 1M-BIT STATIC RAM • • Super Low Voltage Operation and Low Current Consum ption • Access Tim e 120ns 1.8V /70ns (2.7V) • 65,536 W ords x 16-Bit Asynchronous • Industrial Tem perature Range DESCRIPTION The SRM20W 116LLTT2/7 is a 65,536 words x 16-bit asynchronous, random access m em ory on a

PF869-03

Contextual Info: PF869-03 SRM20W116LLTT2/7 1M-Bit Static RAM ge olta wV r Lo n e p Su eratio Op ducts Pro ● Super Low Voltage Operation and Low Current Consumption ● Access Time 120ns 1.8V / 70ns(2.7V) ● 65,536 Words X16-Bit Asynchtonous ● Wide Temperature Range • DESCRIPTION

Contextual Info: PF867-03 SRM20W116LLTX2/7 1M-Bit Static RAM age ●Super Low Voltage Operation and Low Current Consumption ●Access Time 120ns 1.8V / 70ns (2.7V) ●65,536 WordsX16-Bit Asynchtonous ●Wide Temperature Range Volt ow L r e Sup eration Op ducts Pro • DESCRIPTION

Contextual Info: SRM20W116LLTT2/7 1M-BIT STATIC RAM ● ● ● ● Super Low Voltage Operation and Low Current Consumption Access Time 120ns 1.8V /70ns (2.7V) 65,536 Words x 16-Bit Asynchronous Industrial Temperature Range • DESCRIPTION The SRM20W116LLTT2/7 is a 65,536 words x 16-bit asynchronous, random access memory on a

Contextual Info: EPSON PF947-01 SRM20W117LLTT/SLTT2/7 1 M-Bit Static RAM i Super Low Voltage Operation and Low Current Consumption i Access Time 120ns 1.8V / 70ns (2.7V) i 65,536 Words x16-bit Asynchtonous i Wide Temperature Range I DESCRIPTION The SRM20W117LLTT/SLTT2/7 is a 65,536 words x 16-bit asynchronous, random access memory on a monolithic

Contextual Info: PF873-03 SRM20W117LLTX/SLTX2/7 1M-Bit Static RAM e ltag Vo Lown r e Sup eratio ts Op oduc Pr ● Super Low Voltage Operation and Low Current Consumption ● Access Time 120ns 1.8V / 70ns (2.7V) ● 65,536 WordsX16-Bit Asynchtonous ● Wide Temperature Range

Contextual Info: PF867-01 EPSON SRM20W116 LLTX2/7 1 M-Bit Static RAM •S u p e r Low Voltage Operation and Low Current Consumption •A c c e s s Time 120ns 1.8V / 70ns (2.7V) •6 5 ,5 3 6 W ordsXI 6-Bit Asynchtonous •W id e Temperature Range I DESCRIPTION The SRM 20W 11 6 LLTX 2/7 is a 65,536 words x 16-bit asynchronous, random access memory on a monolithic

SRM20W116LLTX2

Contextual Info: EPSON PF867-03 SRM20W116 LLTX2/7 1M-Bit Static RAM •S u p e r Low Voltage Operation and Low Current Consumption •A c c e s s Time 120ns 1.8V / 70ns (2.7V) •6 5 ,5 3 6 W ordsXI 6-Bit Asynchtonous •W id e Temperature Range I DESCRIPTION The SRM 20W 116 LLTX 2/7 is a 65,536 words x 16-bit asynchronous, random access memory on a monolithic

Contextual Info: SRM20W116LLTX2/7 1M-BIT STATIC RAM ● ● ● ● Super Low Voltage Operation and Low Current Consumption Access Time 120ns 1.8V /70ns (2.7V) 65,536 Words x 16-Bit Asynchronous Wide Temperature Range • DESCRIPTION The SRM20W116LLTX2/7 is a 65,536 words x 16-bit asychronous, random access memory on a

Contextual Info: PF947-01 SRM20W117LLTT/SLTT2/7 1M-Bit Static RAM e ltag Vo Lown r e Sup eratio ts Op oduc Pr ● Super Low Voltage Operation and Low Current Consumption ● Access Time 120ns 1.8V / 70ns (2.7V) ● 65,536 Words x16-bit Asynchtonous ● Wide Temperature Range

Contextual Info: SRM20W116LLTX2/7 1M-BIT STATIC RAM • • Super Low Voltage Operation and Low Current Consum ption • Access Tim e 120ns 1.8V /70ns (2.7V) • 65,536 W ords x 16-Bit Asynchronous • W ide Tem perature Range DESCRIPTION The SRM20W116LLTX2/7 is a 65,536 w ords x 16-bit asychronous, random access m em ory on a

Contextual Info: EPSON PF869-01 SRM20W116 LLTT2/7 1M-Bit Static RAM •S u p e r Low Voltage Operation and Low Current Consumption •A c c e s s Time 120ns 1.8V / 70ns(2.7V) •6 5 ,5 3 6 Words X16-Bit Asynchtonous •W id e Temperature Range I DESCRIPTION The SR M 20W 1 16 LLTT 2/7 is a 65,536 words x16-bit asynchronous, random access memory on a monolithic

UPD444C

Abstract: SRM2264LC10 hm6116 SRM2264LCT10
Contextual Info: Short Form Matrix Static Memory Line-Up The static nature of the memory requires no external clock or refreshing circuit and its very low power consumption makes it ideal for applications requiring non-volatile storage with back-up batteries. S-MOS Systems, Inc. •150 RlverOaks Parkway • San Jose, CA 95134 *Tel: 408 922-0200 • Fax: (408) 922-0238

SRM2A256SLC

Abstract: SRM20100LLM srm2264lct SRM2A256LLCT SRM20100LL SRM2264LC SRM2564C SRM20100LMT tl512 SRM20116
Contextual Info: Section 4 Memories SRM2264LC SRM2264LCT 64K 8KX8 Access tim e ns Part number Capacity(bits) Organization(bits) - SRM2464MT* 'K K K SRM2564C >r S afe RAM — I 32KX9 K 7 0 /8 5 /1 0 0 •SRM2A256LLMX 7 0 /8 5 /1 0 0 i SRM2A256LLCT 85/100 ■SRM2B256SLMX 5 5 /7 0 /1 0 0

upd444c

Abstract: SRM2016C12 SRM2264LC10 SRM2264lm10 SRM2B256SLMX55 SRM20100LRMT85 SRM2016C-12 SRM2016C SRM2264LCT10 SRM20100LMT
Contextual Info: 1997 DATABOOK SRAM PRODUCTS 000-97-MEM-1.0 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: 408 922-0200 • Fax: (408) 922-0238 1 THIS PAGE INTENTIONALLY BLANK 2 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: (408) 922-0200 • Fax: (408) 922-0238

DIP28pin

Abstract: sop6
Contextual Info: Memories S tatic H A M s CMOS Static RAMs Wide temperature operation: —25 to +85°C P a rt n u m b e r C a p a c ity O ^ a r t a t o n Power s u p p ly (V ) C urre n t consum ption Operating S tandby (mA, Max.) i ^ A , Max.) Am bient te n $ d ra lu re

SRM2B256SLMX55

Abstract: SRM2016C
Contextual Info: Table of Contents Table of Contents SRAM Products Short Form M atrix. 5 SRM2016C10/12.16K-Bit Static RAM. 7 SRM2016C/MT12.16K-Bit Static