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    SRF TRANSISTOR Search Results

    SRF TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    SRF TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    srf transistor

    Abstract: No abstract text available
    Text: SRF 1136 NPN RF POWER TRANSISTOR DESCRIPTION: The ASI SRF 1136 is a Common Emitter Device Designed for class C Amplifier Applications up to 1 GHz. PACKAGE STYLE 280 4L STUDLESS FEATURES INCLUDE: • High Gain • Gold Metallization • Emitter Ballasting MAXIMUM RATINGS


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    srf transistor

    Abstract: No abstract text available
    Text: SRF 1318 NPN RF POWER TRANSISTOR DESCRIPTION The ASI SRF 1318 is a Common Emitter Device Designed for Class C Amplifier Applications up to 1 GHz. PACKAGE STYLE 280 4L STUDLESS FEATURES INCLUDE: • High Gain • Gold Metallization • Emitter Ballasting MAXIMUM RATINGS


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    JESD22-A104B

    Abstract: jesd22-a103b JESD22-A113 SRF-1016Z SRF-2016Z SRQ-2116Z STQ-1016Z STQ-2016Z STQ-3016Z TSSOP-16
    Text: Reliability Qualification Report STQ-2016Z - Matte Sn, RoHS compliant Products Qualified by Similarity STQ-1016Z SRF-1016Z SRQ-2116Z STQ-3016Z SRF-2016Z The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for


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    STQ-2016Z STQ-1016Z SRF-1016Z SRQ-2116Z STQ-3016Z SRF-2016Z RQR-104756 SRQ-2116Z, JESD22-A104B jesd22-a103b JESD22-A113 SRF-2016Z SRQ-2116Z TSSOP-16 PDF

    STQ2016Z

    Abstract: JESD22-A104B SRF-2016Z JESD22-A110 SRF-1016Z SRQ-2116Z STQ-1016Z STQ-2016Z STQ-3016Z TSSOP-16
    Text: Reliability Qualification Report STQ-2016Z - Matte Sn, RoHS compliant Products Qualified by Similarity STQ-1016Z SRF-1016Z SRQ-2116Z STQ-3016Z SRF-2016Z The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for


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    STQ-2016Z STQ-1016Z SRF-1016Z SRQ-2116Z STQ-3016Z SRF-2016Z RQR-104756 SRQ-2116Z, STQ2016Z JESD22-A104B SRF-2016Z JESD22-A110 SRQ-2116Z TSSOP-16 PDF

    srf 2417

    Abstract: ML2724 DB10 ML2726 ML5745 220nf capacitor SRF274 718G
    Text: SRF-2724CS Proposed 2.4GHZ LOW-IF 1.5MBPS FSK TRANSCEIVER Package: 7mmx7mmx1mm Battery N/C 8 Features „ „ „ „ „ „ „ „ „ „ VCC Complete 2.4GHz Transceiver - High Data Rate 1.5Mbps - 81dBm Sensitivity at 0.1% BER (Typ.) - 3dBm Output Power (Differential, Typ.)


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    SRF-2724CS 81dBm ML2724DH 32TQFP ML2724DH-T DS090410 srf 2417 ML2724 DB10 ML2726 ML5745 220nf capacitor SRF274 718G PDF

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    Abstract: No abstract text available
    Text: SMT Air Coil Inductor AIAC-2712C RoHS Compliant FEATURES: • High current design • Wide Range Frequency Response • Excellent Q & SRF • Standard flat cap top suitable for automatic placement. 6.00 x 2.50 x 2.60mm APPLICATIONS: • Widely used in Cordless Phones, High Frequency Communication


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    AIAC-2712C AIAC-2712C-17N5 AIAC-2712C-22N0 AIAC-2712C-28N0 AIAC-2712C-35N5 AIAC-2712C-43N5 50where PDF

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    Abstract: No abstract text available
    Text: SMT Air Coil Inductor AIAC-4125C RoHS Compliant FEATURES: • High current design • Wide Range Frequency Response • Excellent Q & SRF • Standard flat cap top suitable for automatic placement. 9.0 x 4.4 x 4.6mm APPLICATIONS: • Widely used in Cordless Phones, High Frequency Communication


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    AIAC-4125C AIAC-4125C-R090 AIAC-4125C-R111 AIAC-4125C-R130 AIAC-4125C-R169 AIAC-4125C-R206 AIAC-4125C-R222 AIAC-4125C-R246 AIAC-4125Cwhere PDF

    Untitled

    Abstract: No abstract text available
    Text: SMT Air Coil Inductor AIAC-1008C Pb RoHS Compliant FEATURES: • High current design • Wide Range Frequency Response • Excellent Q & SRF • Standard flat cap top suitable for automatic placement. 3.20 x 1.90 x 2.20mm APPLICATIONS: • Widely used in Cordless Phones, High Frequency Communication


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    AIAC-1008C AIAC-1008C-6N8 AIAC-1008C-8N2 AIAC-1008C-10N AIAC-1008C-12N AIAC-1008C-15N AIAC-1008C-18N AIAC-1008C-22N AIAC-1008C-2where PDF

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    Abstract: No abstract text available
    Text: SMT Air Coil Inductor AIAC-0805C Pb RoHS Compliant FEATURES: • High current design • Wide Range Frequency Response • Excellent Q & SRF • Standard flat cap top suitable for automatic placement. 2.85 x 1.80 x 2.10mm APPLICATIONS: • Widely used in Cordless Phones, High Frequency Communication


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    AIAC-0805C AIAC-0805C-3N9 AIAC-0805C-4N7 AIAC-0805C-5N6 AIAC-0805C-6N8 AIAC-0805C-8N2 AIAC-0805C-10N AIAC-0805C-12N AIAC-0805C-where PDF

    Untitled

    Abstract: No abstract text available
    Text: SMT Air Coil Inductor AIAC-1812 RoHS Compliant FEATURES: • High current design • Wide Range Frequency Response • Excellent Q & SRF • Standard flat cap top suitable for automatic placement. 4.7 x 3.5 x 3.5mm APPLICATIONS: • Widely used in Cordless Phones, High Frequency Communication


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    AIAC-1812 AIAC-1812-22N AIAC-1812-27N AIAC-1812-33N AIAC-1812-39N AIAC-1812-47N AIAC-1812-56N AIAC-1812-68N AIAC-1812-82N AIAC-1812-Rwhere PDF

    Untitled

    Abstract: No abstract text available
    Text: SMT Air Coil Inductor AIAC-1512C RoHS Compliant FEATURES: • High current design • Wide Range Frequency Response • Excellent Q & SRF • Standard flat cap top suitable for automatic placement. 3.30 x 2.50 x 2.60mm APPLICATIONS: • Widely used in Cordless Phones, High Frequency Communication


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    AIAC-1512C AIAC-1512C-2N5 AIAC-1512C-5N0 AIAC-1512C-8N0 AIAC-1512C-12N5 AIAC-1512C-18N5 50where PDF

    ignition driver

    Abstract: FJAFS1510A fairchild Resonant IC FJAFS1510ATU FDC655 HV cascode smps cascode smps
    Text: FJAFS1510A ESBCTM Rated NPN Power Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, SMPS, HV Industrial Power Supplies


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    FJAFS1510A FJAFS1510A ignition driver fairchild Resonant IC FJAFS1510ATU FDC655 HV cascode smps cascode smps PDF

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    Abstract: No abstract text available
    Text: FJAFS1510A ESBCTM Rated NPN Power Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, SMPS, HV Industrial Power Supplies


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    FJAFS1510A FJAFS1510A PDF

    fairchild power bjt

    Abstract: fjp2160d fdc6551 cascode mosfet switching ESBC j2160 J2160D C 1008 y transistor input output bjt npn transistor
    Text: FJP2160D ESBCTM Rated NPN Silicon Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, HV Industrial Power Supplies • Motor Driver and Ignition Driver


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    FJP2160D fairchild power bjt fdc6551 cascode mosfet switching ESBC j2160 J2160D C 1008 y transistor input output bjt npn transistor PDF

    j1510a

    Abstract: FJAFS1510A
    Text: FJAFS1510A ESBC Rated NPN Power Transistor Applications Description • High-Voltage and High-Speed Power Switches • Emitter-Switched Bipolar/MOSFET Cascodes ESBC™ • Smart Meters, Smart Breakers, SMPS, HV Industrial Power Supplies The FJAFS1510A is a low-cost, high-performance power


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    FJAFS1510A j1510a PDF

    Untitled

    Abstract: No abstract text available
    Text: FJP2145 ESBC Rated NPN Power Transistor ESBC Features FDC655 MOSFET • • • • • • • Description VCS(ON) IC Equiv. RCS(ON)(1) 0.21 V 2A 0.105 Ω The FJP2145 is a low-cost, high-performance power switch designed to provide the best performance when


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    FJP2145 FDC655 FJP2145 PDF

    J1720

    Abstract: smps ic GKJ FDS8817
    Text: FJAFS1720 ESBC Rated NPN Power Transistor ESBC Features FDS8817 MOSFET • • • • • • • Description VCS(ON) IC Equiv. RCS(ON) 0.304 V 10 A 0.0304 Ω (1) The FJAFS1720 is a low-cost, high-performance power switch designed to provide the best performance when


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    FJAFS1720 FDS8817 J1720 smps ic GKJ PDF

    c 945 TRANSISTOR equivalent

    Abstract: FDC655 fairchild power bjt ignition drivers
    Text: FJBE2150D ESBC Rated NPN Silicon Transistor Description ESBC Features FDC655 MOSFET VCS(ON) IC Equiv. RCS(ON) 0.131 V 0.5 A 0.261 Ω(1) The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBC™ configuration in applications such as: power supplies, motor drivers,


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    FJBE2150D FDC655 c 945 TRANSISTOR equivalent fairchild power bjt ignition drivers PDF

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    Abstract: No abstract text available
    Text: FJBE2150D ESBC Rated NPN Silicon Transistor Description ESBC Features FDC655 MOSFET VCS(ON) IC Equiv. RCS(ON) 0.131 V 0.5 A 0.261 Ω(1) The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBC™ configuration in applications such as: power supplies, motor drivers,


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    FJBE2150D FDC655 FJBE2150D PDF

    Untitled

    Abstract: No abstract text available
    Text: FJPF2145 ESBC Rated NPN Power Transistor ESBC Features FDC655 MOSFET • • • • • • • Description VCS(ON) IC Equiv. RCS(ON)(1) 0.21 V 2A 0.105 Ω The FJPF2145 is a low-cost, high-performance power switch designed to provide the best performance when


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    FJPF2145 FDC655 FJPF2145 PDF

    darlington pair transistor

    Abstract: 6LF6 common collector amplifier circuit designing micro-x mhz ghz microwave GRM188R71E473K Amplifier SOT-89 c4 0603CS-33NX_LU SKY65014 sky65015-70lf transistor Common Base configuration
    Text: APPLICATION NOTE Gain Block Bias Networks Introduction Skyworks gain block amplifiers are InGaP/GaAs HBT integrated circuits. They use a Darlington-pair transistor configuration with bias and feedback resistors properly selected to determine the gain, input and output impedances and bias parameters. A schematic representation of the amplifier is shown in Figure 1.


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    Untitled

    Abstract: No abstract text available
    Text: CTEL PRO DUCTS INC. INDUCTORS 13402 South 71 Highway/Grandview, MO 64030/ 816 761-6314 TWX 910-777-7037 MINI-L HERMETICALLY SEALED RF INDUCTORS TG, TH SERIES Series A max. Weight TG TH .390 .350 .06 oz. .07 oz. The TG and TH series offer high “ Q" inductors in a TO-5 transistor can con­


    OCR Scan
    TH-41 TH-42 TH-43 TG-31 TG-32 TG-33 TG-34 TG-35 TG-36 PDF

    660 TG

    Abstract: TH31 TH-43 th1018 TH18 TH 477 transistor tg9 th16 MIL-T-27 TG-14
    Text: W~l C T EL IN D U C TO R S PRODUCTS INC. 13402 South 71 Highway/Grandview, MO 64030/ 816 761-6314 TWX 910-777-7037 M IN I-L HERMETICALLY SEALED RF INDUCTORS . TG, TH SERIES Series A max. Weight TG TH .390 .350 .06 oz. .07 oz. The TG and TH series offer high "Q " inductors in a TO-5 transistor can con­


    OCR Scan
    HP4342A MIL-T-27, TH-35 TH-36 TH-37 TH-38 TH-39 TH-40 TH-41 TH-42 660 TG TH31 TH-43 th1018 TH18 TH 477 transistor tg9 th16 MIL-T-27 TG-14 PDF

    Untitled

    Abstract: No abstract text available
    Text: or el tA PRODUCTS INC. INDUCTORS 13402 South 71 Highway/Grandview, MO 64030/ 816 761-6314 TWX 910-777-7037 MINI-L HERMETICALLY SEALED RF INDUCTORS TG, TH SERIES S e rie s A m ax. W e ig h t TG TH .3 9 0 .350 .0 6 o z . .0 7 o z . The TG and TH series offer high “ Q ” inductors in a TQ-5 transistor can con­


    OCR Scan
    HP4342A MIL-C-15305, PDF