SRD4 Search Results

10G APD chip

Abstract: 10G APD ROSA GN2003 HUW0626006-01A HUW0626006-01D PRBS231-1 R1550 avalanche photodiode 1550nm sensitivity sumitomo apd rosa SRD2441-CG5
Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: SRD4442-CS5 Document No.: HUW0626006-01D Date of issue: Mar. 28 2007 Preliminary Specification of APD Preamplifier Module SRD4442-CS5 RoHS Compliant Sumitomo Electric Industries, Ltd. Sumitomo Electric Industries, Ltd.

sumitomo apd rosa

Abstract: receiver 5 pin coaxial stm 16 SRD4513-CS9 ingaas apd-tia sumitomo apd
Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: SRD4513-CS9 Document No.: HUW0526024-01A Date of issue: Feb 8, 2006 Preliminary Specification of APD Preamplifier Module SRD4513-CS9 Sumitomo Electric Industries, Ltd. Sumitomo Electric Industries, Ltd. Part No.:

preamplifier at 15 GHz

Abstract: HUW0526009-01A HUW0526009-01B HUW0526009-01C PRBS231-1 R1550
Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: SRD4142-CS1 Document No.: HUW0526009-01C Date of issue: October 25, 2006 Technical Specification of PIN Preamplifier Module SRD4142-CS1 RoHS Compliant Sumitomo Electric Industries, Ltd. Sumitomo Electric Industries, Ltd.

Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: SRD4141-CS1 Document No.: HUW0526003-01A Date of issue: April 25, 2005 Preliminary Specification of PIN Preamplifier Module SRD4141-CS1 Sumitomo Electric Industries, Ltd. Sumitomo Electric Industries, Ltd. Part No.:

68040

Abstract: TIP 31 Transistor
Contextual Info: 0ns TITLE 50ns 100ns 150ns 200ns PCI9060/68040 STATIC RAM READ 68040 , 4 WORDS, NO WAIT STATES [SRD4_040.TD] (07/8/95) {13.33,17.33} BCLK-30 [6.5,25] [6.5,] LA[0.31], SIZ0,1 [6.5,25] [6.5,25] TS~ [6.5,25] [6.5,] TIP~ [6.5,25] [6.5,25] R/W [2,7.5] [2,7.5]

Contextual Info: PIN DIODE MODULES PIN diode switches - SPST SPST Electrical characteristics @ 25° C Model Direct Reverse Bias Bias S1B502 SRB502 S1D502 SRD502 S1B2004 SRB2004 S1D2004 SRD2004 S1B4008 SRB4008 S1D4008 SRD4008 Bias requirements: Direct bias: Frequency range

sumitomo apd rosa

Abstract: srd461 apd-TIA Receiver low noise preamplifier
Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: SRD4613-CS9 Document No.: HUW0526025-01A Date of issue: Feb 8, 2006 Preliminary Specification of APD Preamplifier Module SRD4613-CS9 Sumitomo Electric Industries, Ltd. Sumitomo Electric Industries, Ltd. Part No.:

M7707

Abstract: rd201 PLD-10 imv D6-11 BV 726 C 1 Converter w5753 fd187 sGCT function PR 161A RD202
Contextual Info: O K I Semiconductor MSM7707 Baseband integration LSI device for PHS GENERAL DESCRIPTION The MSM7707 is an LSI device with an ADPCM CODEC function, jt/4 shift QPSK modulation/ demodulation function and a TDMA-TDD function required for PHS Personal Handy phone

Contextual Info: Integrated Circuit Systems, Inc. ICS1890-2 100Base-TX PHYceiver for Repeater Applications General Description Features The ICS1890-2 is a fully integrated physical layer device supporting lOOMb/s only CSMA/CD Fast Ethernet Repeater applications. It is designed meet the specific requirements of

Contextual Info: ICS1891 Integrated Circuit Systems, Inc. Advance Information 100Base-TX PHYceiver for Unmanaged Fast Ethernet Applications General Description Features The ICS1891 is a fully integrated physical layer device sup­ porting unmanaged 100Mb/s only CSMA/CD Ethernet appli­

Midcom 7090-37

Abstract: 1893CYI-10LF A10M ICS1893 ICS1893CY-10 ICS189X 7090-37
Contextual Info: Integrated Device Technology, Inc. Document Type: ICS1893CY-10 Data Sheet Document Stage: Preliminary Release 3.3-V 10Base-T/100Base-TX Integrated PHYceiver General The ICS1893CY-10 is a low-power, physical-layer device PHY that supports the ISO/IEC 10Base-T and 100Base-TX

hfc-s

Abstract: VAC L5051-X014-80 L5051-X014-80 l5051-x014 l5051 vogt 543 vogt f6 vogt 1N4148 PCM30
Contextual Info: DATA SHEET HFC - S 2BDS0 ISDN HDLC FIFO controller with S/T interface Copyright 1994 - 1997 Cologne Chip Designs All Rights Reserved The information presented can not be considered as assured characteristics. Data can change without notice. Parts of the information presented may be protected by

Contextual Info: Edition 2.0 1. MB86687A OVERVIEW The ALC simultaneously supports autonomous segmentation and reassembly of user data packets on up to 1024 virtual circuits VCs . User data packets are transferred to and from shared data structure memory using a high speed intelligent DMA

324T

Abstract: 2MWx16bit
Contextual Info: ADVANCED INFORMATION MX69LW322/324T/B 32M-BIT [X8/X16] FLASH AND 2M-BIT/4M-BIT X8/X16 SRAM MIXED MULTI CHIP PACKAGE MEMORY FEATURES • Supply voltage range: 2.7V to 3.6V • Fast access time: Flash memory:70/90ns SRAM memory:70/85ns • Operation temperature range: -40 ~ 85°C

F420

Abstract: F441 ICS1890 ICS1892 ICS1893 ICS1894 ICS189X
Contextual Info: Integrated Circuit Systems, Inc. Document Type: ICS1893 Data Sheet Document Stage: Release 3.3-V 10Base-T/100Base-TX Integrated PHYceiver General The ICS1893 is a low-power, physical-layer device PHY that supports the ISO/IEC 10Base-T and 100Base-TX Carrier-Sense Multiple Access/Collision Detection

full adder circuit using nor gates

Abstract: full subtractor circuit using nand gate full subtractor circuit using nor gates full subtractor circuit using decoder 8 bit carry select adder verilog codes half adder 74 full subtractor circuit nand gates 8 bit subtractor 3 bit carry select adder verilog codes full subtractor circuit using nand gates
Contextual Info: CLA70000 Series High Density CMOS Gate Arrays DS2462 Recent advances in CMOS processing technology and improvements in design architecture have led to the development of a new generation of array-based ASIC products with vastly improved gate integration densities. This

Contextual Info: DATA SHEET HFC - S 2BDS0 ISDN HDLC FIFO controller with S/ T interfa ce Copyright 1994 - 1997 Cologne Chip Designs All Rights Reserved The information presented can not be considered as assured characteristics. Data can change without notice. Parts of the information presented may be protected by

BA100 diode

Abstract: BA102 ba107 Samsung MCP BA125 Diode diode ba102 BA134 BA100 BA106
Contextual Info: Advance Information MCP MEMORY K5C6481NT B M Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Dual Bank NOR Flash Memory / 8M(512Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Advance Information Draft Date Remark Sep. 7, 2001 Advance

ICS1890

Abstract: ICS1889
Contextual Info: ICS1890 Integrated Circuit Systems, Inc. 10Base-T/100Base-TX Integrated PHYceiver™ General Description The ICS1890 is a fully integrated physical layer device supporting 10 and 100Mb/s CSMA/CD Ethernet applications. DTE adapter cards or motherboards , switching hub, repeater

M6MGB/T166S4BWG

Abstract: Mitsubishi Stacked CSP M6MGT166S4
Contextual Info: MITSUBISHI LSIs M6MG B/T166S4B WG 16,777,216-BIT 1,048,576 -WORD BY 16-BIT CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT) CMOS SRAM Stacked-CSP (Chip Scale Package) DESCRIPTION FEATURES The MITSUBISHI M6MGB/T166S4BWG is a Stacked Chip

Multi Chip Memory

Contextual Info: ADVANCED INFORMATION MX69LW3221/3241T/B 32M-BIT [X16] FLASH AND 2M-BIT/4M-BIT [X16] SRAM MIXED MULTI CHIP PACKAGE MEMORY FEATURES • Supply voltage range: 2.7V to 3.6V • Fast access time: Flash memory:70/90ns SRAM memory:70/85ns • Operation temperature range: -40 ~ 85°C

mx29lw321

Contextual Info: ADVANCED INFORMATION MX29LW321T/B 32M-BIT [4M x 8 / 2M x 16] ONLY CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • • • • • • Supply voltage range: 2.7V to 3.6V 2M word x 16 Bit /4M Byte x 8 Bit switchable Fast access time: 70/80/90ns 20mA maximum active current

M5M29GB160BVP

Abstract: M5M29GT160BVP
Contextual Info: MITSUBISHI LSIs M5M29GBT160BVP-80 16,777,216-BIT 2097,152-WORD BY 8-BIT /1048,576-WORD BY16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The M ITSUBISHI Mobile FLASH M 5M 29G B/T160BVP are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Mem ories with

Contextual Info: MITSUBISHI LSIs M6MGB/T08S2ATP 8388608-BIT 1 M x 8-BIT/512k x 16-BIT CMOS 3.3V-ONLY FLASH MEMORY & 2097152-BIT (256k x 8-BIT) CMOS STATIC RAM MCP (Multi Chip Package) FEATURES DESCRIPTION The MITSUBISHI M6MGB/T08S2ATP is a Multi Chip Package (MCP) that contents 8-Mbit Flash memory and