intel 80196 microcontroller
Abstract: 6164 ram memory intel 80196 microcontroller development board ram 6164 m6809 intel 6164 ram sram 6164 datasheet microprocessor 80286 internal architecture intel 80196 microcontroller pin diagram 80196 internal architecture diagram
Text: Programmable Peripheral Application Note 011 PSD3XX Device Description Chapter 1 Introduction The PSD3XX family of products include flexible I/O ports, PLD, Page Register, 256K to 1M EPROM, 16K bit SRAM and “Glueless” Logic Interface to the microcontroller. The PSD3XX
|
Original
|
PDF
|
|
intel 80196 microcontroller
Abstract: M68230 M68008 m6809 intel 80196 assembly language intel 80196 microcontroller pin diagram M6809 cpu 80C196 assembly language 6116 sram file type memory mapping 6809B
Text: Programmable Peripheral Application Note 011 PSD3XX Device Description Chapter 1 Introduction The PSD3XX family of products include flexible I/O ports, PLD, Page Register, 256K to 1M EPROM, 16K bit SRAM and “Glueless” Logic Interface to the microcontroller. The PSD3XX
|
Original
|
PDF
|
|
SM53A
Abstract: S71PL032J04 S71PL032J04BAI0B S71PL032J04BAW0B S71PL032J04BFI0B S71PL032J04BFW0B TSC056
Text: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA December 9, 2005 Advanced Change Notification No: Subject: 2560 Obsolescence of S71PL032J04 using SRAM Type 2 Spansion LLC is announcing the obsolescence of the S71PL032J04BAW0B due to the obsolescence of
|
Original
|
PDF
|
S71PL032J04
S71PL032J04BAW0B
S71PL032J04BAW0B,
S71PL032J04BFW0B,
S71PL032J04BAI0B,
S71PL032J04BFI0B
SM53A30
SM53AP5
TSC056
S71PL032J04BAW0B0
SM53A
S71PL032J04BAI0B
S71PL032J04BFI0B
S71PL032J04BFW0B
TSC056
|
sram 6164
Abstract: 61128 SRAM Zilog Z80 family 80C196 6164 sram ST9026 80C198 intel 8096 motorola 68008 sram 6164 datasheet
Text: Programmable Peripheral Application Note 029 Interfacing PSD4XX/5XX To Microcontrollers By Ravi Kumar Abstract PSD4XX/5XX Architecture This application note is intended to give the reader a general guideline on how to interface PSD4XX/5XX Field Programmable Microcontroller Peripherals
|
Original
|
PDF
|
|
KM736V789T-60
Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
Text: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L
|
OCR Scan
|
PDF
|
256Kb»
32KX8
KM62256CI-5/5L
KM62256CLE
KM62256CLI-7/7L
KM62256DL-5/5L
KM62256DLI-7/7L
512Kb»
64Kx8
KM68512AL-5/5L
KM736V789T-60
8AEL
65z7
KM68U512ALE-L
KM736V689T-8
KM732V595AT
KMB16
36SOJ
KM68U4000A
KM68V2000L-8L
|
KM684002J
Abstract: M68400 KM6164002
Text: KM 6164002/L CM OS SRAM 262,144 WORD x 16 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS) : 10mA (Max.) L-Ver : 500//A (Max) Operating : KM6164002-20 : 250mA (Max.)
|
OCR Scan
|
PDF
|
KM6164002/L
500//A
KM6164002-20
250mA
KM6164002-25
240mA
KM6164002-35
220mA
44-SOJ-400
KM6164002/L
KM684002J
M68400
KM6164002
|
Untitled
Abstract: No abstract text available
Text: KM6164002B, KM6164002BI CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Rev. 0.0 Initial release with Design Target. Jan. 1st, 1997 Design Target
|
OCR Scan
|
PDF
|
KM6164002B,
KM6164002BI
256Kx16
44-TSOP2-400F
|
Untitled
Abstract: No abstract text available
Text: KM6164002B, KM6164002BI CMOS SRAM Document Tills 256Kx16 Bit High Speed Static RAM 5V Operating , Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial release with Design Target. Jan. 1st, 1997
|
OCR Scan
|
PDF
|
KM6164002B,
KM6164002BI
256Kx16
44-TSOP2-400F
|
SRAM sheet samsung
Abstract: No abstract text available
Text: Prelim inary CMOS SRAM KM 6164002B, KM6164002BI D o cu m e n t Title 256Kx16 Bit High Speed Static RAM 5V O perating , Revolutionary Pin out. Operated at Com m ercial and Industrial Tem perature Range. R evision H istory R ev No. H isto ry D raft Data R em ark
|
OCR Scan
|
PDF
|
KM6164002B,
KM6164002BI
256Kx16
SRAM sheet samsung
|
SRAM256KX16
Abstract: SRAM_256KX16
Text: ADVANCED CM OS SRAM KM 6164000AL/AL-L 256K x16 B it CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e : 55, 70, 85ns Max. • Low Power Dissipation Standby (CMOS) : 500,«W(Typ.) L-Version 5,MW(Typ.) LL-Version Operating : 165mW(max.) • Single 5 ± 1 0 % V power supply
|
OCR Scan
|
PDF
|
KM6164000AL/AL-L
256Kx16
165mW
I/09-I/016
KM6164000ALT/LT-
44-TSOP2-400F
KM6164000AL/L-L
304-bit
KM6164000AL7L-L
SRAM256KX16
SRAM_256KX16
|
Untitled
Abstract: No abstract text available
Text: KM6164002A, KM6164002AE, KM6164002AI CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Jun. 14th, 1996
|
OCR Scan
|
PDF
|
KM6164002A,
KM6164002AE,
KM6164002AI
256Kx16
/20ns
15/17/20ns
44-SOJ-400
|
altl
Abstract: No abstract text available
Text: Advanced CMOS SRAM KM6164000AL/AL-L 256Kx16 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. The KM6164000AL/AL-L is a 4,194,304-bit high speed • Low Power Dissipation Static Random Access Memory organized as 262,144
|
OCR Scan
|
PDF
|
KM6164000AL/AL-L
256Kx16
KM6164000AL/AL-L
304-bit
6164000AL/AL-L
KM6164he
KM6164000ALT/ALT-L:
400mil
0D213G1
altl
|
Untitled
Abstract: No abstract text available
Text: Preliminary KM6164002A CMOS SRAM 256Kx 16 Biit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,20 ns Max. • Low Power Dissipation Standby (TTL) : 50 mA(Max.) (C M O S): 10 mA(Max.) Operating KM6164002A-12 : 260 mA(Max.)
|
OCR Scan
|
PDF
|
KM6164002A
256Kx
KM6164002A-12
164002A
KM6164002A-20
KM6164002AJ
44-SOJ-4QO
KM6164002A
304-bit
|
Untitled
Abstract: No abstract text available
Text: a Advanced Micro Devices 674219 FIFO RAM Controller Ordering Information Features/ Benefits • High-speed, no fall-through time • Deep FIFOs—16-bit SRAM address Part Number Pins Type Temperature 674219 40 CD 040 Com • Arbitration read/write • Control signals lor data latching
|
OCR Scan
|
PDF
|
16-bit
1N916
1N306A.
|
|
74F138
Abstract: 74F32 74F374 F138 F374 HM6168H-45 "FRC"
Text: a Advanced Micro Devices 674219 FIFO RAM Controller O rdering Inform ation F e a tu re s / Benefits • High-speed, no fall-through time • Deep FIFOs— 16-blt SRAM address Part Num ber Pins Type Tem perature 674219 40 CD 040 Com • Arbitration read/write
|
OCR Scan
|
PDF
|
16-bit
1N916
1N306A.
74F138
74F32
74F374
F138
F374
HM6168H-45
"FRC"
|
Untitled
Abstract: No abstract text available
Text: KM6164002/KM6164002L CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (C M O S):10m A(M ax.) 500|.iA(Max.) - L-Ver Operating KM6164002/L-20 : 240 mA(Max.)
|
OCR Scan
|
PDF
|
KM6164002/KM6164002L
KM6164002/L-20
6164002/L-25
6164002/L-35
KM6164002J/LJ
44-SOJ-
KM6164002/L
304-bit
0to70
|
71L414E
Abstract: KIVI6164002A KM6164002A KM6164002A-15 KM6164002A-17 KM6164002A-20
Text: KM6164002A CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Fast Access Time 15, 17, 20* • Max. - Low Power Dissipation Standby (TTL) : 5 0 *‘ (Max.) The KM6164002A is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The
|
OCR Scan
|
PDF
|
KIVI6164002A
256Kx
KM6164002A
I/O16
KM6164002AJ
44-SOJ-400
304-bit
71L414E
KIVI6164002A
KM6164002A-15
KM6164002A-17
KM6164002A-20
|
KM6164002A
Abstract: KM6164002A-15 KM6164002A-17 KM6164002A-20 SRAM sheet samsung
Text: KM6164002A CMOS SRAM D o cu m e n t Title 256Kx16 Bit High Speed Static RAM 5V O perating , Revolutionary Pin out. Operated at Com m ercial Tem perature Range. R evision H istory Draft Data R em ark R ev No. H isto ry Rev. 0.0 Initial release w ith Design T arget.
|
OCR Scan
|
PDF
|
KM6164002A
256Kx16
/20ns
/240mA
/12ns
-/14ns
I/01-I/08
I/09-I/016
KM6164002A
KM6164002A-15
KM6164002A-17
KM6164002A-20
SRAM sheet samsung
|
KM616U1000BL-L
Abstract: No abstract text available
Text: MEMORY ICs FUNCTION GUIDE 1. Low Power SRAM 5V Operation Den. 256K Org. 32K X 8 Op. Temp Speed KM62256CL KM62256CL-L 0 -7 0 ’ C 4 5/55/70 KM62256CLE -2 5 -8 5 =C KM62256CLI KM62256CLI-L -4 0 -8 5 °C 1M 64K X 8 KM68512CL KM68512CL-L 0 -7 0 ‘ C KM68512CLI
|
OCR Scan
|
PDF
|
KM62256CL
KM62256CL-L
KM62256CLE
KM62256CLE-L
KM62256CLI
KM62256CLI-L
28-TSOP
28-DIP
28-SOP
KM68512CL
KM616U1000BL-L
|
Untitled
Abstract: No abstract text available
Text: CMOS SRAM KM6164000C Family_ Document Title 256Kx16 bit Low Power CMOS Static RAM R evision No. H isto ry D raft Data R e m a rk 0.0 Initial d ra ft December 17, 1998 Prelim inary 1.0 Finalize April 17, 1999 Finalize The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
|
OCR Scan
|
PDF
|
KM6164000C
256Kx16
256Kx16
|
KM6164000B
Abstract: KM6164000BLI-L KM6164000BL-L
Text: C M O S SRAM K M 6164000B Fam ily D o c u m e n t Title 256K x16 bit Low P ow er C M O S Static RAM Revision H is to ry H isto ry D raft Data R em ark 0.0 Initial dra ft Ju n e 28 th 1996 A d va n ce 0.1 R evise - Die na m e ch a n g e ; A to B S e p te m b e r 19th 1996
|
OCR Scan
|
PDF
|
KM6164000B
KM6164000BLI-L
KM6164000BL-L
|
UM6164
Abstract: 6164D UM6164D ix0928 cet 1113 ls UM61
Text: UM6164D Seríes 8K X 8 High Speed CMOS SRAM Features • S ing le + 5 V p o w e r s u p p ly * D irectly T T L co m p a tib le : All inp u ts and o utp uts ■ A ccess tim e s: 1 2 /1 5 n s m ax. ■ C urrent: O p e ra ting : 150m A S ta n d b y: * C o m m o n I/O using three-state o u tp u t
|
OCR Scan
|
PDF
|
UM6164D
28-pin
6164D
192-w
6164DK-12
6164DS-12
28LSO
UM6164
ix0928
cet 1113 ls
UM61
|
um6164
Abstract: UM6164-2
Text: U M 6 1 6 4 S e r i e s 8 High Speed CMOS SRAM 8K Features • S ingle + 5 v o lt p o w e r su p p ly ■ D ir e c tly T T L c o m p a tib le : A ll in p u ts and o u tp u ts ■ Access tim e s: 2 0 /2 5 /3 0 ns m ax. ■ C o m m o n I/O using th re e -sta te o u tp u t
|
OCR Scan
|
PDF
|
28LSO
um6164
UM6164-2
|
Untitled
Abstract: No abstract text available
Text: Preliminary KM6164002C/CL, KM6164002CI/CLI CMOS SRAMI Document Title 256Kx16 Bit High Speed Static RAM 5V Operating . Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Draft Data Rev. 0.0 Initial release with Preliminary.
|
OCR Scan
|
PDF
|
KM6164002C/CL,
KM6164002CI/CLI
256Kx16
KM61640
|