SRAM 512K*8 BIT SOP32 Search Results

BS62LV4003

Abstract: BS62LV4003EC BS62LV4003EI BS62LV4003PC BS62LV4003SC BS62LV4003SI BS62LV4003STC BS62LV4003TC TSOP2-32
Contextual Info: Low Power/Voltage CMOS SRAM 512K X 8 bit BSI BS62LV4003 „ FEATURES „ GENERAL DESCRIPTION • Very low operation voltage : 2.4V ~ 3.6V • Very low power consumption Vcc = 3.0V C-grade: 20mA Max. operating current I -grade: 25mA (Max.) operating current

BS62LV4006

Contextual Info: Very Low Power CMOS SRAM 512K X 8 bit Automotive Grade BS62LV4006 Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 25mA Max. at 70ns

Contextual Info: LH5P8512 FEATURES PRELIMINARY CM OS 4M 512K x 8 Pseudo-Static RAM • • 5 24,28 8 x 8 bit organization • Access time: 60 /7 0 /8 0 ns (M AX.) • Cycle time: 110/130/150 ns (M IN .) • Power supply: Compatible with JE D E C standard 4M SRAM pinout •

BS62LV4006EI

Abstract: BS62LV4006 BS62LV4006EC BS62LV4006PC BS62LV4006PI BS62LV4006SC BS62LV4006SI BS62LV4006STC BS62LV4006TC
Contextual Info: Very Low Power CMOS SRAM 512K X 8 bit BS62LV4006 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC operation voltage : 2.4V ~ 5.5V y Very low power consumption : Operation current : 30mA Max. at 55ns VCC = 3.0V

TSOP2-32

Abstract: BS62LV4005 BS62LV4005EC BS62LV4005EI BS62LV4005PC BS62LV4005SC BS62LV4005SI BS62LV4005STC BS62LV4005STI BS62LV4005TC
Contextual Info: BSI Low Power/Voltage CMOS SRAM 512K X 8 bit BS62LV4005 „ GENERAL DESCRIPTION „ FEATURES • Vcc operation voltage : 4.5V ~ 5.5V • Low power consumption Vcc = 5.0V C-grade: 45mA Max. operating current I -grade: 50mA (Max.) operating current 1.5uA (Typ.) CMOS standby current

STSOP-32

Abstract: BS62LV4005 BS62LV4005EC BS62LV4005EI BS62LV4005PC BS62LV4005SC BS62LV4005SI BS62LV4005STC BS62LV4005STI BS62LV4005TC
Contextual Info: BSI Low Power/Voltage CMOS SRAM 512K X 8 bit BS62LV4005 „ GENERAL DESCRIPTION „ FEATURES • Vcc operation voltage : 4.5V ~ 5.5V • Low power consumption Vcc = 5.0V C-grade: 45mA Max. operating current I -grade: 50mA (Max.) operating current 1.5uA (Typ.) CMOS standby current

375E-1

Abstract: BS62LV4006 BS62LV4006EC BS62LV4006PC BS62LV4006SC BS62LV4006STC BS62LV4006S stsop32
Contextual Info: Very Low Power CMOS SRAM 512K X 8 bit BS62LV4006 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 30mA Max. at 55ns

Contextual Info: Very Low Power CMOS SRAM 512K X 8 bit BS62LV4006 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 30mA Max. at 55ns

jedec ms-024

Abstract: BH62UV4000 BH62UV4000DI BH62UV4000SI
Contextual Info: Ultra Low Power/High Speed CMOS SRAM 512K X 8 bit BH62UV4000 Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V Ÿ Ultra low power consumption : VCC = 3.6V Operation current : 10mA Max. at 55ns

jedec ms-024

Abstract: BS62LV4006SA
Contextual Info: Very Low Power CMOS SRAM 512K X 8 bit Automotive Grade BS62LV4006 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 30mA Max. at 55ns

BH62UV4000

Abstract: BH62UV4000DI BH62UV4000SI BH62UV4000STI BH62UV4000TI TSOP-32
Contextual Info: Ultra Low Power/High Speed CMOS SRAM 512K X 8 bit BH62UV4000 Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V The BH62UV4000 is a high performance, ultra low power CMOS Ÿ Ultra low power consumption :

HN58C1001FPI-15

Abstract: HN58C1001FPI-15 hitachi M5M5V216ATP-55HI M5M51008DFP-55HI BGA-165 M5M5W817 TSOP 28 SPI memory Package flash BGA165 SRAM 512K*8 BIT SOP32 M5M5256DFP-70LL
Contextual Info: Memory Products Reliable specialty, advanced and mainstream commodity memory devices for digital storage applications Renesas, the #3 semiconductor supplier worldwide, offers an extensive range of memory ICs for temporary and permanent digital storage in all kinds

toshiba toggle mode nand

Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
Contextual Info: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit

Sharp IIS

Abstract: C31A SHARP ORDERING INFORMATION
Contextual Info: SHARP b lE CORP LH5P8512 FEATURES • 524,288 x 8 bit organization • Access time: 60/70/80 ns MAX. • Cycle time: 110/130/150 ns (MIN.) • Power supply: D • ûlfiOTSfi GG G T b 5 5 D3S H S R P J PRELIMINARY CMOS 4M (512K x 8) Pseudo-Static RAM •

UC62LV2008

Abstract: UC62LS4008AC UC62LS4008AI UC62LS4008FC UC62LS4008FI UC62LS4008GC UC62LS4008GI UC62LS4008HC UC62LS4008HI SRAM 512K BIT SOP32
Contextual Info: Low Power CMOS SRAM 512K X 8 Bits UC62LS4008 -20/-25 Description Features: • Vcc operation voltage : 3.0V ~ 3.6V • Low power consumption : 20mA Max. operating current 2uA (Typ.) CMOS standby current • High Speed Access time : 25ns (Max.) at Vcc = 3.0V

CMOS 512K RAM

Abstract: SRAM 512K BIT SOP32 32-PIN LH5PV8512
Contextual Info: LH5PV8512 CMOS 4M 512K x 8 Pseudo-Static RAM FEATURES DESCRIPTION • 524,288 words × 8 bit organization The LH5PV8512 is a 4M bit Pseudo-Static RAM with a 524,288 word × 8 bit organization. It is fabricated using silicon-gate CMOS process technology.

Contextual Info: CMOS 4M 512K x 8 P se u d o -S ta tic RAM FEATURES DESCRIPTION • 524,288 words x 8 bit organization The LH5PV8512 is a 4M bit Pseudo-Static RAM with a 524,288 word x 8 bit organization. It is fabricated using silicon-gate CMOS process technology. • CE access time Ocea): 120 ns (MAX.)

Contextual Info: CMOS 4M 512K x 8 Pseudo-Static RAM FEATURES DESCRIPTION • 524,288 words x 8 bit organization The LH5PV8512 is a 4M bit Pseudo-Static RAM with a 524,288 word x 8 bit organization. It is fabricated using silicon-gate CMOS process technology. • CE access time (tcEA)• 120 ns (MAX.)

sp8512

Contextual Info: PRELIMINARY L H 5 P 8 5 1 2 FEATURES • 5 2 4 ,2 8 8 x 8 bit organization • Access time: 6 0 /7 0 /8 0 ns M AX. • Cycle time: 110/130/150 ns (M IN .) • Power supply: CMOS 4M (512K • x 8) Pseudo-Static RAM Compatible with J E D E C standard 4M SRA M pinout

Contextual Info: LH5P8512 FEATURES • 5 2 4 ,2 8 8 x 8 bit organization • Access time: 60 /7 0 /8 0 ns M AX. • Cycle time: 110/130/150 ns (M IN .) PRELIMINARY CMOS 4M (512K • x 8) Pseudo-Static RAM Compatible with J E D E C standard 4M S RA M pinout • Packages:

R1LV1616

Abstract: ECU car R1LV0816A R1LV08 HM62V8100 r1lp0408c m5m5v208akv R1LV0808ASB-5SI M5M5256DVP-70LL M5M5W817
Contextual Info: R1LV0816ABG -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0393-0100 Rev.1.00 2009.12.08 Description The R1LV0816ABG is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

ECU car

Abstract: 52-pin TSOP M5M5V108DVP-70HI r1lv0808 m5m5v108dkv M5M5V216ATP-70HI
Contextual Info: [Preliminary] This product is under development and its specification might be changed without any notice. R1LV0816ASD -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit / 1M word x 8bit REJ03C0397-0001 Preliminary Rev.0.01 2009.12.08 Description The R1LV0816ASD is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit,

M66005-0001AHP

Abstract: rtd 2668 toyota bean protocol M66005 LCD TV T-con board 41 pin name m37632mct ic RTD 2648 M66005-0001AFP M37632EFFP hd66791
Contextual Info: 2004.4 2004.4 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

MSM7731-02

Abstract: P-BGA313-3535-1 TBA 931 MsM82C59 MSM66 arm processor msm5299 SSOP20-P-250-0 QFJ28-P-S450-1 MSM65524A
Contextual Info: Datasheet CD-ROM Ver 1.23, July 1999 Bay of Islands, New Zealand Attention Please! People to People Technology 1. Regarding Operation • This is NOT a music CD. Please do not play it on an ordinary music CD player. It may cause damage to your ears and loudspeakers.