SRAM 35NS Search Results

AS5C512K8

Abstract: SMD MARKING CODE 12L
Contextual Info: SRAM SRAM SRAM AS5C512K8 AS5C512K8 Austin Semiconductor, Inc. AS5C512K8 Austin Semiconductor, Inc. 512K ASSIGNMENT 512K xx 88 SRAM SRAM PINPIN ASSIGNMENT PIN ASSIGNMENT 512K x 8 SRAM Top View HIGH SPEED SRAM with HIGH SPEED SRAM with HIGH SPEED SRAM with

SD14

Abstract: SD15 WSE128K16-XXX ED11 ED15 SD10 SD12 SD13
Contextual Info: White Electronic Designs WSE128K16-XXX PRELIMINARY* 128Kx16 SRAM/EEPROM MODULE FEATURES „ Access Times of 35ns SRAM and 150ns (EEPROM) „ Access Times of 45ns (SRAM) and 120ns (EEPROM) „ Access Times of 70ns (SRAM) and 300ns (EEPROM) „ Packaging • 66 pin, PGA Type, 1.075" square HIP, Hermetic

MT56C0816

Abstract: AW 55 IC LT 5251 80386 cache
Contextual Info: M in P n M * ^ MT56C0816 8K x 16, DUAL 4K x 16 CACHE DATA SRAM CACHE DATA SRAM SINGLE 8Kx 16 SRAM, DUAL 4Kx16 SRAM CONFIGURABLE CACHE DATA SRAM FEATURES • Operates as two 4K x 16 SRAMs with common addresses and data; also configurable as a single 8K x 16 SRAM

74LS373 PIN CONFIGURATION AND SPECIFICATIONS

Abstract: intel 80386
Contextual Info: MT56C3816 8K x 16, DUAL 4K x 16 CACHE DATA SRAM M IC R O N SINGLE 8Kx 16 SRAM, DUAL 4Kx16 SRAM CACHE DATA SRAM CONFIGURABLE CACHE DATA SRAM FEATURES • Operates as two 4K x 16 SRAMs with common addresses and data; also configurable as a single 8K x 16 SRAM

WSF2816-39G2UX

Abstract: SD10 SD12 SD13 SD14 SD15 WSF2816-39XX
Contextual Info: White Electronic Designs WSF2816-39XX 128KX16 SRAM/512KX16 FLASH MODULE FEATURES „ Access Times of 35ns SRAM and 90ns (FLASH) „ Packaging • 66 pin, PGA Type, 1.075" square HIP, Hermetic Ceramic HIP (Package 400) 128Kx16 SRAM „ 512Kx16 5V FLASH „ Organized as 128Kx16 of SRAM and 512Kx16 of

LT 543 IC pin diagram

Abstract: IC SRAM 8K X 8 microprocessor 80386 pin out diagram
Contextual Info: M IC R O N 1 MT56C0818 8K x 18, DUAL 4K x 18 CACHE DATA SRAM T CACHE DATA SRAM SINGLE 8K x18 SRAM, DUAL4 K x 18 SRAM CONFIGURABLE CACHE DATA SRAM FEATURES • Operates as two 4K x 18 SRAMs with common addresses and data; also configurable as a single 8K x 18 SRAM

LT 543 IC pin diagram

Abstract: pin diagram of lt 542
Contextual Info: MT56C0818 8K x 18, DUAL 4K x 18 CACHE DATA SRAM |U |C R O N CACHE DATA SRAM SINGLE 8Kx18 SRAM, DUAL 4K x 18 SRAM CONFIGURABLE CACHE DATA SRAM FEATURES PIN ASSIGNMENT Top View • Operates as two 4K x 18 SRAM s w ith common addresses and data; also configurable as a single

ED11

Abstract: ED15 SD10 SD12 SD13 SD14 SD15 WSE128K16-XXX
Contextual Info: White Electronic Designs WSE128K16-XXX PRELIMINARY* 128Kx16 SRAM/EEPROM MODULE FEATURES Commercial, Industrial and Military Temperature Ranges Access Times of 35ns SRAM and 150ns (EEPROM) TTL Compatible Inputs and Outputs Access Times of 45ns (SRAM) and 120ns (EEPROM)

Contextual Info: M lfP H M I y MT56C3816 8K x 16, DUAL 4K x 16 CACHE DATA SRAM SINGLE 8 Kx 16 SRAM, DUAL 4K x 16 SRAM CACHE DATA SRAM CONFIGURABLE CACHE DATA SRAM FEATURES • Operates as two 4K x 16 SRAMs with common addresses and data; also configurable as a single 8K x 16 SRAM

a12w

Abstract: 74LS373 PIN CONFIGURATION AND SPECIFICATIONS
Contextual Info: M IC R O N MT56C0818 DUAL 4 K x 1 8 SRAM, SINGLE 8K x 18 SRAM CACHE DATA SRAM CONFIGURABLE CACHE DATA SRAM FEATURES • Operates as two 4K x 18 SRAM s with common ad dresses and data; also configurable as a single 8K x 18 SRAM • Built-in input ad dress latches

as8sf384k32

Abstract: Mixed Module
Contextual Info: SRAM & FLASH Mixed Module AS8SF384K32 128K x 16 SRAM & 512K x 16 FLASH PIN ASSIGNMENT Top View SRAM / FLASH MEMORY ARRAY 68 Lead CQFP (QT) FEATURES NC A0 A1 A2 A3 A4 A5 FCS\1 GND FCS\2 SWE\1 A6 A7 A8 A9 A10 VCC • Operation with single 5V supply • High speed: 35ns SRAM, 90ns FLASH

Contextual Info: MT56C3818 8K x 18, DUAL 4K x 18 CACHE DATA SRAM M IC R O N CACHE DATA SRAM SINGLE 8Kx18 SRAM, DUAL 4KX18SRAM CONFIGURABLE CACHE DATA SRAM FEATURES • Operates as two 4K x 18 SRAMs with common addresses and data; also configurable as a single 8K x 18 SRAM

Contextual Info: SRAM & FLASH Mixed Module AS8SF384K32 128K x 16 SRAM & 512K x 16 FLASH PIN ASSIGNMENT Top View SRAM / FLASH MEMORY ARRAY 68 Lead CQFP (QT) NC A0 A1 A2 A3 A4 A5 FCS\1 GND FCS\2 SWE\1 A6 A7 A8 A9 A10 VCC FEATURES • Operation with single 5V supply • High speed: 35ns SRAM, 90ns FLASH

Contextual Info: TT WSF512K16-XXX M/HITE /MICROELECTRONICS 512Kx16 SRAM/FLASH MODULE, SMD 5962-96901 FLASH MEMORY FEATURES • Access Times of 35ns SRAM and 90ns (FLASH) ■ 10,000 Erase/Program Cycles ■ Access Times of 70ns (SRAM) and 120ns (FLASH) ■ Sector Architecture

SD10

Abstract: SD12 SD13 SD14 SD15 WSF512K16-XXX WSF512K16-XG2X
Contextual Info: White Electronic Designs WSF512K16-XXX 512KX16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES Access Times of 35ns SRAM and 90ns (FLASH) TTL Compatible Inputs and Outputs Access Times of 70ns (SRAM) and 120ns (FLASH) Built-in Decoupling Caps and Multiple Ground Pins

pin diagram of IC 74LS373

Contextual Info: M IC R O N MT56C0816 CACHE DATA SRAM DUAL 4Kx16 SRAM, SINGLE 8Kx16 SRAM CONFIGURABLE CACHE DATA SR A M FEATURES • O perates as two 4K x 16 SRAM s with common ad dresses and data; also configurable as a single 8K x 16 SRAM • Built-in input ad dress latches

ED11

Abstract: SD10 SD12 SD13 SD14 SD15 WSE128K16-XXX ED07
Contextual Info: WSE128K16-XXX 128KX16 SRAM/EEPROM MODULE PRELIMINARY* FEATURES • TTL Compatible Inputs and Outputs ■ Access Times of 35ns SRAM and 150ns (EEPROM) ■ Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation ■ Access Times of 45ns (SRAM) and 120ns (EEPROM)

smd marking "d3"

Abstract: SMD MARKING A13
Contextual Info: SRAM MT5C2568 Austin Semiconductor, Inc. 32K x 8 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY 28-PIN SOJ (ECJ) 28-Pin DIP (C, CW) FEATURES OPTIONS MARKING • Timing 12ns access1 15ns access1 20ns access 25ns access 35ns access 45ns access 55ns access2

Contextual Info: Militay SRAM Products 128Kx8, 15 - 35ns, LCC/JLCC 30A037-01 B 1 Megabit High Speed CMOS SRAM DPS128M8En DESCRIPTION: The DPS128M8En is a very high speed 128K x 8 Static Random Access Memory SRAM fabricated with a CMOS silicon gate process. The memory utilizes

SD10

Abstract: SD13 SD14 SD15 WSF128K16-XXX TWS 434 pin diagram SD3 smd
Contextual Info: WSF128K16-XXX HI-RELIABILITY PRODUCT 128KX16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES • Commercial, Industrial and Military Temperature Ranges ■ Access Times of 35ns SRAM and 70ns (FLASH) ■ TTL Compatible Inputs and Outputs ■ Access Times of 70ns (SRAM) and 120ns (FLASH)

Contextual Info: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES  Access Times of 35ns (SRAM) and 90ns (FLASH)  100,000 Erase/Program Cycles Minimum  Access Times of 70ns (SRAM) and 120ns (FLASH)  Sector Architecture

SD10

Abstract: SD12 SD13 SD14 SD15 WSF512K16-XXX
Contextual Info: WSF512K16-XXX HI-RELIABILITY PRODUCT 512KX16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES FLASH MEMORY FEATURES • Access Times of 35ns SRAM and 90ns (FLASH) ■ 100,000 Erase/Program Cycles ■ Access Times of 70ns (SRAM) and 120ns (FLASH) ■ Sector Architecture

Contextual Info: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES  Access Times of 35ns (SRAM) and 90ns (FLASH)  100,000 Erase/Program Cycles Minimum  Access Times of 70ns (SRAM) and 120ns (FLASH)  Sector Architecture

Contextual Info: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES  Access Times of 35ns (SRAM) and 90ns (FLASH)  100,000 Erase/Program Cycles Minimum  Access Times of 70ns (SRAM) and 120ns (FLASH)  Sector Architecture