Untitled
Abstract: No abstract text available
Text: 64KX4 BASED Dense-Pac Microsystems, inc. C M O S SRAM FAM ILY DESCRIPTION: The Dense-Pac 64K X4 Based Fam ily consists of static ra n d o m a c c e s s m e m o rie s S R A M S o rg a n iz e d as described below. T h ese m em ories are ideally suited for use in large
|
OCR Scan
|
64KX4
DPS5124
DPS5124-45C
DPS5124-55C
DPS5124-55I
24-55M
DPS6432-45C
DPS6432-55C
DPS6432-55I
|
PDF
|
Untitled
Abstract: No abstract text available
Text: WSF128K16-XXX 128Kx16 SRAM / NOR FLASH MODULE SMD 5962-96900* Weight FEATURES Access Times of 35ns (SRAM) and 70ns (FLASH) • WSF128K16-H1X — 13 grams typical • WSF128K16-XG1UX1 — 5 grams typical Access Times of 70ns (SRAM) and 120ns (FLASH)
|
Original
|
WSF128K16-XXX
128Kx16
WSF128K16-H1X
WSF128K16-XG1UX1
120ns
66-pin,
ICCx32
|
PDF
|
Untitled
Abstract: No abstract text available
Text: WE512K16-XG4X 512Kx16 CMOS EEPROM MODULE FEATURES Access Time of 140, 150, 200ns Page Write Cycle Time: 10ms Max Packaging: Data Polling for End of Write Detection Hardware and Software Data Protection • 68 lead, 40mm Hermetic CQFP Package 501
|
Original
|
WE512K16-XG4X
512Kx16
200ns
128Kx16
MIL-STD-883
MIL-PRF-38534
|
PDF
|
Untitled
Abstract: No abstract text available
Text: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES Access Times of 35ns (SRAM) and 90ns (FLASH) 100,000 Erase/Program Cycles Minimum Access Times of 70ns (SRAM) and 120ns (FLASH) Sector Architecture
|
Original
|
WSF512K16-XXX
512KX16
120ns
ICCx16
|
PDF
|
Untitled
Abstract: No abstract text available
Text: WSF2816-39XX 128Kx16 SRAM / 512Kx16 NOR FLASH MODULE Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation FEATURES Access Times of 35ns SRAM and 90ns (FLASH) Weight: Packaging • WSF2816-39G2UX - 8 grams typical
|
Original
|
WSF2816-39XX
128Kx16
512Kx16
WSF2816-39G2UX
WSF2816-39H1X
ICCx16
|
PDF
|
Untitled
Abstract: No abstract text available
Text: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES Access Times of 35ns (SRAM) and 90ns (FLASH) 100,000 Erase/Program Cycles Minimum Access Times of 70ns (SRAM) and 120ns (FLASH) Sector Architecture
|
Original
|
WSF512K16-XXX
512KX16
120ns
ICCx16
MIL-STD-883
MIL-PRF-38534
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VZÀ WHITE /M IC R O E L E C T R O N IC S 128Kx16 SRAM/FLASH MODULE WSF128K16-XXX P R E LIM IN A R Y * FEATURES FLASH MEM ORY FEATURES • Access Times of 35nS SRAM and 70nS (FLASH) ■ 10,000 Erase/Program Cycles ■ Access Times of 70nS (SRAM) and 120nS (FLASH)
|
OCR Scan
|
WSF128K16-XXX
128Kx16
120nS
66-pin,
256Kx8
|
PDF
|
FD11O
Abstract: No abstract text available
Text: YZÀ WSF512K16-XXX I/WHITE / M I C R O E L E C T R O N I C S 512Kx16 SRAM/FLASH MODULE P R E L IM IN A R Y • FEATURES FLASH MEMORY FEATURES • A ccess Tim es of 35nS S R A M and 90nS (FLASH) ■ 10,000 Erase/Program Cycles ■ A ccess Tim es of 70nS (SR A M ) and 120nS (FLASH)
|
OCR Scan
|
WSF512K16-XXX
512Kx16
120nS
66-pin,
120nS
FD11O
|
PDF
|
IDT8M624
Abstract: 8M624 8M624S 64k dynamic RAM 8M612S100 IDT8M624S
Text: Integrated Device Technology, Inc. 64K x 16 32K x 16 CMOS STATIC RAM MODULE FEATURES: • High-density CMOS static RAM module 64K x 16 organi zation IDT8M624S or 32K x 16 option (IDT8M612S) • Fast access time: — Commercial - 25ns (max.) — Military - 35ns (max.)
|
OCR Scan
|
IDT8M624S
IDT8M612S
IDT8M624S)
IDT8M612S)
40-pin
IDT8M624S/IDT8M612S
IDT8M624S,
IDT8M612S
64K/32K
MtL-STD-883
IDT8M624
8M624
8M624S
64k dynamic RAM
8M612S100
|
PDF
|
SD10
Abstract: SD12 SD13 SD14 SD15 WSF512K16-XXX WSF512K16-XG2X
Text: White Electronic Designs WSF512K16-XXX 512KX16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES Access Times of 35ns SRAM and 90ns (FLASH) TTL Compatible Inputs and Outputs Access Times of 70ns (SRAM) and 120ns (FLASH) Built-in Decoupling Caps and Multiple Ground Pins
|
Original
|
WSF512K16-XXX
512KX16
120ns
120ns
01HXX
02HXX
SD10
SD12
SD13
SD14
SD15
WSF512K16-XXX
WSF512K16-XG2X
|
PDF
|
SD10
Abstract: SD13 SD14 SD15 WSF128K16-XXX scs 2003
Text: White Electronic Designs WSF128K16-XXX 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES TTL Compatible Inputs and Outputs Access Times of 35ns SRAM and 70ns (FLASH) Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation Access Times of 70ns (SRAM) and 120ns (FLASH)
|
Original
|
WSF128K16-XXX
128Kx16
120ns
WSF128K16-XHX
WSF128K16-H1X
WSF128K16-XG1UX1
WSF128K16-XG1TX
66-pin,
SD10
SD13
SD14
SD15
WSF128K16-XXX
scs 2003
|
PDF
|
Untitled
Abstract: No abstract text available
Text: P CYM1828 PRELIMINARY / CYPRESS 32K x 32 Static RAM Module Features Functional Description • High-density 1-megabit SRAM module • High-speed CMOS SRAMs — Access time o f 25 ns • 66-pin, 1.1-inch-square PGA package • Low active power — 3.3W max.
|
OCR Scan
|
CYM1828
66-pin,
CYM1828LHG-35C
66-Pin
CYM1828HGâ
CYM1828LHGâ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1CY M18 28 PRELIMINARY CYM1828 32K x 32 Static RAM Module Features is constructed using four 32K x 8 static RAMs mounted onto a multilayer ceramic substrate. Four chip selects CS1, CS2, CS3, CS4 are used to independently enable the four bytes. Reading or writing can be executed on individual bytes or any
|
Original
|
CYM1828
66-pin,
|
PDF
|
SF512K16
Abstract: No abstract text available
Text: WHITE / M I C R O E L E C T R O N I C S W SF512K16-XXX 512Kx16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES FLASH MEMORY FEATURES • A ccess Tim es o f 35ns SRAM and 90ns (FLASH] ■ 10,000 E rase/Program Cycles ■ A ccess Tim es o f 70ns (SRAM) and 120ns (FLASH)
|
OCR Scan
|
SF512K16-XXX
512Kx16
120ns
68-lead,
120ns
01HXX
02HXX
01HMX
SF512K16
|
PDF
|
|
|
WSF2816-39G2UX
Abstract: SD10 SD12 SD13 SD14 SD15 WSF2816-39XX
Text: White Electronic Designs WSF2816-39XX 128KX16 SRAM/512KX16 FLASH MODULE FEATURES Access Times of 35ns SRAM and 90ns (FLASH) Packaging • 66 pin, PGA Type, 1.075" square HIP, Hermetic Ceramic HIP (Package 400) 128Kx16 SRAM 512Kx16 5V FLASH Organized as 128Kx16 of SRAM and 512Kx16 of
|
Original
|
WSF2816-39XX
128KX16
SRAM/512KX16
WSF2816-39G2UX
WSF2816-39H1X
512Kx16
SD10
SD12
SD13
SD14
SD15
WSF2816-39XX
|
PDF
|
A16 SMD
Abstract: SD10 SD13 SD14 SD15 WSF128K16-XXX
Text: White Electronic Designs WSF128K16-XXX 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES Access Times of 35ns SRAM and 70ns (FLASH) Access Times of 70ns (SRAM) and 120ns (FLASH) Packaging TTL Compatible Inputs and Outputs Built-in Decoupling Caps and Multiple Ground Pins
|
Original
|
WSF128K16-XXX
128Kx16
120ns
WSF128K16-XHX
WSF128K16-H1X
WSF128K16-XG1UX1
WSF128K16-XG1TX
66-pin,
A16 SMD
SD10
SD13
SD14
SD15
WSF128K16-XXX
|
PDF
|
SF128
Abstract: No abstract text available
Text: ACT–SF128K16 High Speed 128Kx16 SRAM/FLASH Multichip Module CIRCUIT TECHNOLOGY FEATURES www.aeroflex.com • 2 – 128K x 8 SRAMs & 2 – 128K x 8 Flash Die in ■ Packaging – Hermetic Ceramic One MCM ■ Access Times of 25ns SRAM and 60ns (Flash) or
|
Original
|
SF128K16
128Kx16
MIL-PRF-38534
MIL-STD-883
SCD1677
SF128
|
PDF
|
CYM1838HG-25M
Abstract: CYM1838
Text: PRELIMINARY CYM1838 128K x 32 Static RAM Module Features Functional Description D The CYM1838 is a very high performance 4Ćmegabit static RAM module organized as 128K words by 32 bits. The module is constructed using four 128K x 8 static RAMs mounted onto a multilayer ceramic
|
Original
|
CYM1838
CYM1838
66pin,
CYM1838HG-25M
|
PDF
|
30A008-00
Abstract: 256KX1 256KX16 256KX4 S2564 CFT-5 A618
Text: DENSE-PAC MICROSYSTEMS 0?E D | STSTMIS 0000135 O | 256KX1 BASED Dense-Pac Microsystems, Inc. C M O S SRAM FAM ILY -PRELIM INARYDPS25616 DPS20482 DESCRIPTION: T h e D e n se -P ac 2 56K X1 B ase d Fa m ily m od ules con sists o f v e ry high sp eed 256K X1 b a sed static R A M s w h ic h
|
OCR Scan
|
256KX1
DPS2564
256KX4
DPS10241
1024KX
DPS25616
256KX16,
512KX8,
1024KX4
30A008-00
256KX16
S2564
CFT-5
A618
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Integrated Device Technology, Inc. 64K X 16 32K X 16 CMOS STATIC RAM MODULE FEATURES: • High-density C M O S static RAM module 64K x 16 organi zation ID T 8 M P 6 2 4 o r 3 2 K x 16 option (ID T 8M P 61 2) • Fast access time: 25ns (max.) • S eparate upper byte (1/09-16) and tower byte (I/O i -b)
|
OCR Scan
|
IDT8MP624S
IDT8MP612S
40-pin
IDT8MP624S,
IDT8MP612S
64K/32K
|
PDF
|
Untitled
Abstract: No abstract text available
Text: WSF512K16-XXX 512KX16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES FLASH MEMORY FEATURES Access Times of 35ns SRAM and 90ns (FLASH) 100,000 Erase/Program Cycles Access Times of 70ns (SRAM) and 120ns (FLASH) Sector Architecture Packaging
|
Original
|
WSF512K16-XXX
512KX16
120ns
|
PDF
|
Untitled
Abstract: No abstract text available
Text: WSF2816-39XX 128Kx16 SRAM/512Kx16 FLASH MODULE Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation FEATURES Access Times of 35ns SRAM and 90ns (FLASH) Weight: Packaging • WSF2816-39G2UX - 8 grams typical
|
Original
|
WSF2816-39XX
128Kx16
SRAM/512Kx16
WSF2816-39G2UX
WSF2816-39H1X
512Kx16
|
PDF
|
SD14
Abstract: SD15 WSE128K16-XXX ED11 ED15 SD10 SD12 SD13
Text: White Electronic Designs WSE128K16-XXX PRELIMINARY* 128Kx16 SRAM/EEPROM MODULE FEATURES Access Times of 35ns SRAM and 150ns (EEPROM) Access Times of 45ns (SRAM) and 120ns (EEPROM) Access Times of 70ns (SRAM) and 300ns (EEPROM) Packaging • 66 pin, PGA Type, 1.075" square HIP, Hermetic
|
Original
|
WSE128K16-XXX
128Kx16
150ns
120ns
300ns
128K16
150ns
120ns
300ns
SD14
SD15
WSE128K16-XXX
ED11
ED15
SD10
SD12
SD13
|
PDF
|
SD10
Abstract: SD13 SD14 SD15 WSF128K16-XXX TWS 434 pin diagram SD3 smd
Text: WSF128K16-XXX HI-RELIABILITY PRODUCT 128KX16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES • Commercial, Industrial and Military Temperature Ranges ■ Access Times of 35ns SRAM and 70ns (FLASH) ■ TTL Compatible Inputs and Outputs ■ Access Times of 70ns (SRAM) and 120ns (FLASH)
|
Original
|
WSF128K16-XXX
128KX16
120ns
66-pin,
WSF128K16-XHX
120ns
01HXX
SD10
SD13
SD14
SD15
WSF128K16-XXX
TWS 434 pin diagram
SD3 smd
|
PDF
|