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    AEMC Instruments SR704

    Ac Current Probe Model Sr704 (1000A, 1Ma/A, Lead) Ha* L** Rohs Compliant: Na |Aemc Instruments SR704
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    Newark SR704 Bulk 13 1
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    TestEquity LLC SR704
    • 1 $355
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    ASUSTeK Computer Inc ASUSR704AC

    Power Supply Applications:Ite; No. Of Outputs:-; Output Power Max:90W; Output Voltage - Output 1:19V; Output Current - Output 1:4.74A; Output Voltage - Output 2:-; Output Current - Output 2:-; Output Connector:-; Product Range:- |Asus ASUSR704AC
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    ASUSTeK Computer Inc ASUSR704BATT

    Battery Voltage:10.8V; Battery Technology:Lithium Ion; Battery Capacity:4.4Ah; Battery Size Code:-; Battery Terminals:-; Pack Quantity:1; Battery Type/Size:-; Weight:-; Battery Iec Code:-; Battery Neda Code:-; Battery Compliance:- Rohs Compliant: Na |Asus ASUSR704BATT
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    Bourns Inc SSR7045-151M

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    Bristol Electronics SSR7045-151M 210
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    SR704 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SR704 Polyfet RF Devices SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Original PDF
    SR704U Polyfet RF Devices SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Original PDF

    SR704 Datasheets Context Search

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    SR704

    Abstract: No abstract text available
    Text: polyfet rf devices SR704 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original     		PDF SR704 SR704

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices SR704U General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF SR704U

    SR704U

    Abstract: No abstract text available
    Text: polyfet rf devices SR704U General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF SR704U SR704U

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices SR704 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF SR704

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices SR704U General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF SR704U

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices SR704 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original     		PDF SR704

    TB181

    Abstract: 470PF 10Turns 18AWG R110 UT85-15 01uF UT85 50 33PF 47UF
    Text: RF IN 19 L=4in UT56-50 C1 9.1PF 4 3 C3 470PF 2 Turns, 22awg 2 1 C4 470PF 2 Turns, 22awg 5 7 31 R2 10 C6 .01UF Ferrite=40mu UT34-17 L=2.7in 8 R1 10 9 SR704 6 10 27 26 R6 10K R5 2.2K R3 5.6K C5 .01UF 10K POT 11 7.5V Zener 12 16 13 C8 47UF 100V 15 Noah Xiong


    Original     		PDF UT56-50 470PF 22awg 470PF UT34-17 SR704 UT85-15 18AWG 240PF TB181 10Turns 18AWG R110 UT85-15 01uF UT85 50 33PF 47UF

    107-1A

    Abstract: TB107-1A tb107 SR704U 10NF 18PF SR704
    Text: TB107-1A R F IN C1 3 .6 P F 2 .5 in L o n g 2 .5 in L o n g C13 .0 1 U F U T 7 5 -1 0 R7 10K U T 8 5 -5 0 C3 62PF C2 62PF R5 10K 10K PO T C5 30 Zener D1 5 .6 V SR704 C14 18PF R 8 2 .2 K R9 100 C6 33 R10 100 C16 10NF C15 11 P F C17 10NF C 1 2 .0 1 U F R4 10K


    Original     		PDF TB107-1A SR704 28Vdc SR704U 28Vdc 800ma TB107-1A 150-400Mhz 107-1A tb107 10NF 18PF SR704

    TB-137

    Abstract: SR704 F240 tb137
    Text: POLYFET RF DEVICES ANALOG/DIGITAL BROADCAST TV Band-3 AMPLIFIER TB-137 SR704 PO VS PIN F=170 MHZ; IDQ=.8A; VDS=28V 240 20 19 18 17 160 1dB compression = 160W Pout 16 120 15 Gain 14 80 GAIN IN DB POUT IN WATTS 200 13 Efficiency = 70% 12 40 11 10 5 10 15 20


    Original     		PDF TB-137 SR704 TB-137/SR704 F240 tb137

    SR704

    Abstract: VDMOS PFS 3000
    Text: polyfet rf devices SR704 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF SR704 SR704 VDMOS PFS 3000

    SR704U

    Abstract: VDMOS S1A 57
    Text: polyfet rf devices SR704U General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF SR704U SR704U VDMOS S1A 57

    TB161A

    Abstract: 105w SR704U 10NF 470PF 704U TB-161A 161A
    Text: The amp TB161A passed a 3:1 VSWR test at 120 watts out at all phase angles. 150 TB-161A SR704U Pout/Gain vs Pin Freq=30MHz Vds=28Vdc Idq=1.2A 12.0 Linear @30W 120 P1dB=105W Pout 11.0 90 10.0 60 Gain Efficiency @120W = 53% 9.0 30 8.0 150 4 8 12 Pin in W a tts


    Original     		PDF TB161A TB-161A SR704U 30MHz 28Vdc 200MHz 105w 10NF 470PF 704U 161A

    TB210

    Abstract: No abstract text available
    Text: August 26, 2013 TB210#3 Frequency=30-400MHz Pout=100W Gain=25dB Vds=28Vdc Idq=0.4A1.0A Efficiency=36% SQ701SR704U PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com August 26, 2013 PH:(805)484-4210 FAX:(805)484-3393


    Original     		PDF TB210 30-400MHz 28Vdc SQ701ï SR704U

    MRF255 equivalent

    Abstract: motorola mrf Motorola transistors MRF mrf5015 mrf184 MRF151G F2012 DU1230P uf2810p MRF255
    Text: CROSS REFERENCE Click on part No. to retrieve data sheet . 5/22/2005 Motorola POLYFET PHILIPS POLYFET MA/COM PHI POLYFET MRF134 MRF136 MRF137 MRF141 MRF141G PRF134 PRF136 PRF137 SM401 SR401 BLF145 BLF147 BLF175 BLF177 BLF242 MRF148 MRF151 MRF151G SA741 SM341


    Original     		PDF MRF134 MRF136 MRF137 MRF141 MRF141G PRF134 PRF136 PRF137 SM401 SR401 MRF255 equivalent motorola mrf Motorola transistors MRF mrf5015 mrf184 MRF151G F2012 DU1230P uf2810p MRF255

    very simple walkie talkie circuit diagram

    Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN very simple walkie talkie circuit diagram blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23

    filter for GPS spice

    Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
    Text: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率


    Original     		PDF RF20105 67SiGe JESD204A-DACADC JESD204A- AEC100 BFR90 BFQ33 TFF1004HN JESD204A BLF578) filter for GPS spice BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode

    MPF102 spice model

    Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
    Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for


    Original     		PDF te121 MPF102 spice model BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H

    double TRANSISTOR SMD MARKING CODE mc

    Abstract: walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN double TRANSISTOR SMD MARKING CODE mc walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578

    blf578

    Abstract: MRF6V2300N ic tea 2025 NXP SMD TRANSISTOR MARKING CODE s1 TEA 2025 equivalent blf278 rf amplifier radar amplifier s-band 2SK163 GaN ADS HSMP3814
    Text: RF マニュアル第 12版 RF製品用のアプリケーションおよび設計マニュアル 2009年6月 ハイパフォーマンス・アナログを体験 NXPの RF マニュアルでRF設計がこ れまでになく簡単に 『NXPの RF マニュアル 』 は、今日RF設計者向けに市場に出回っているレファレンス・ツー


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN blf578 MRF6V2300N ic tea 2025 NXP SMD TRANSISTOR MARKING CODE s1 TEA 2025 equivalent blf278 rf amplifier radar amplifier s-band 2SK163 GaN ADS HSMP3814

    MGCF21

    Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
    Text: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount


    Original     		PDF L8821P LB421 L8821P LP721 SM341 LQ821 SQ701 SR401 MGCF21 LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet

    sot-89 BV SMD TRANSISTOR MARKING CODE

    Abstract: bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer
    Text: RFマニュアル第14版 RF製品用のアプリケーションお よび設計マニュアル2010年5月 NXPセミコンダクターズRFマニュアル第14版 3 最も要求の高いアプリケーションに向けたハイパフォーマンスRF NXPのRFマニュアルでRF設計がこれ


    Original     		PDF NXPRF14 JESD204A AEC100 RFBFR90 RFBFQ33 TFF1004HN FMF11070HN sot-89 BV SMD TRANSISTOR MARKING CODE bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer

    Ft50-43

    Abstract: FT-50-43 bn-61-2402 10NF SR704U BN-61-202 SQ701 TB-210 c38 06 bn61-202
    Text: TB-210 Pin vs Pout Freq=30MHz Vds=28Vdc 200.0 30.0 180.0 29.0 160.0 28.0 140.0 27.0 Pout 120.0 26.0 100.0 25.0 Gain 80.0 24.0 60.0 23.0 40.0 22.0 20.0 21.0 0.0 20.0 0.1 0.2 0.3 0.4 0.5 0.6 Pin in Wa tts 0.7 0.8 0.9 1 TB-210 Pin vs Pout Freq=200MHz Vds=28Vdc


    Original     		PDF TB-210 30MHz 28Vdc 200MHz 400MHz 22AWG, BN-61-202, Ft50-43 FT-50-43 bn-61-2402 10NF SR704U BN-61-202 SQ701 c38 06 bn61-202

    SRDA70-4

    Abstract: TVS RS422 TVS marking CODE BE
    Text: SRDA70-4 STEERING DIODE TVS ARRAY SCOTTSDALE DIVISION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a SO-8 package for use as steering diodes protecting up to four I/O ports from ESD, EFT, or surge by


    Original     		PDF SRDA70-4 SRDA70-4 TVS RS422 TVS marking CODE BE

    circuit diagram of GSM based home automation system

    Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
    Text: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF