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    SPP04N60 Search Results

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    SPP04N60 Price and Stock

    Rochester Electronics LLC SPP04N60C2

    N-CHANNEL POWER MOSFET
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    Rochester Electronics LLC SPP04N60S5

    N-CHANNEL POWER MOSFET
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    Rochester Electronics LLC SPP04N60C3XKSA1

    LOW POWER_LEGACY
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    Infineon Technologies AG SPP04N60C3XKSA1

    MOSFET N-CH 600V 4.5A TO220-3
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    Verical SPP04N60C3XKSA1 3,557 334
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    Arrow Electronics SPP04N60C3XKSA1 44 98 Weeks 1
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    Rochester Electronics SPP04N60C3XKSA1 7,473 1
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    Infineon Technologies AG SPP04N60S5BKSA1

    MOSFET N-CH 600V 4.5A TO220-3
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    DigiKey SPP04N60S5BKSA1 Tube 500
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    SPP04N60 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPP04N60C2 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP04N60C2 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-220, RDSon=0.95 ?, 4.5A Original PDF
    SPP04N60C3 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-220, RDSon=0.95 ?, 4.5A Original PDF
    SPP04N60C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP04N60C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP04N60C3 Infineon Technologies Cool MOS Power Amp., 650V 4.5A 50W, MOS-FET N-Channel enhanced Original PDF
    SPP04N60C3HKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 4.5A TO-220AB Original PDF
    SPP04N60C3XKSA1 Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 650V 4.5A TO-220 Original PDF
    SPP04N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP04N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP04N60S5 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-220, RDSon=0.95 ?, 4.5A Original PDF
    SPP04N60S5 Infineon Technologies Cool MOS Power-Transistor Original PDF
    SPP04N60S5 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SPP04N60S5BKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 4.5A TO-220 Original PDF

    SPP04N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    04n60c3

    Abstract: 04N60C3 equivalent SPP04N60C3 04N60C SDP06S60 SPB04N60C3
    Text: SPP04N60C3 SPB04N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on)


    Original     		PDF SPP04N60C3 SPB04N60C3 P-TO263-3-2 P-TO220-3-1 Q67040-S4366 04N60C3 04n60c3 04N60C3 equivalent SPP04N60C3 04N60C SDP06S60 SPB04N60C3

    04n60c2

    Abstract: spp04n60c2 04N60C
    Text: Final data SPP04N60C2, SPB04N60C2 SPA04N60C2 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.95 Ω ID 4.5 A • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPP04N60C2, SPB04N60C2 SPA04N60C2 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP04N60C2 04n60c2 04N60C

    SPP04N60S5

    Abstract: 04n60s5
    Text: SPP04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPP04N60S5 PG-TO220 P-TO220-3-1 Q67040-S4200 04N60S5 PG-TO220-3-1, SPP04N60S5 04n60s5

    04n60c3

    Abstract: 04N60C 04N60C3 equivalent 04N60 Q67040-S4407 SPA04N60C3 Q67040-S4366 SPB04N60C3 SPP04N60C3 SPB04N60C3 SMD
    Text: Final data SPP04N60C3, SPB04N60C3 SPA04N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original     		PDF SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP04N60C3 04n60c3 04N60C 04N60C3 equivalent 04N60 Q67040-S4407 SPA04N60C3 Q67040-S4366 SPB04N60C3 SPP04N60C3 SPB04N60C3 SMD

    04N60C3

    Abstract: smd transistor G18 04N60C3 equivalent 4V-20V 5304 marking code SPA04N60C3 SPB04N60C3 SPP04N60C3 04N60C
    Text: SPP04N60C3, SPB04N60C3 SPA04N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated


    Original     		PDF SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP04N60C3 04N60C3 smd transistor G18 04N60C3 equivalent 4V-20V 5304 marking code SPA04N60C3 SPB04N60C3 SPP04N60C3 04N60C

    04n60c3

    Abstract: No abstract text available
    Text: Preliminary data SPP04N60C3, SPB04N60C3 SPA04N60C3 Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary VDS @ Tjmax - V • Ultra low gate charge RDS on 0.95 Ω ID 4.5 A •=Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP04N60C3 Q67040-S4366 04n60c3

    04n60s5

    Abstract: SPB04N60S5 SPP04N60S5
    Text: SPP04N60S5 SPB04N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP04N60S5 SPB04N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4200 04N60S5 04n60s5 SPB04N60S5 SPP04N60S5

    04n60c3

    Abstract: 04N60C DSA0031699
    Text: SPP04N60C3 SPB04N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.95 Ω


    Original     		PDF SPP04N60C3 SPB04N60C3 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4366 Q67040-S4407 04n60c3 04N60C DSA0031699

    04n60s5

    Abstract: No abstract text available
    Text: SPP04N60S5 SPB04N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.95 Ω • Optimized capacitances


    Original     		PDF SPP04N60S5 SPB04N60S5 SPPx6N60S5/SPBx6N60S5 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4200 04n60s5

    Untitled

    Abstract: No abstract text available
    Text: SPP04N60S5 SPB04N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 0.95 Ω ID 4.5 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP04N60S5 SPB04N60S5 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4200 Q67040-S4201

    5A20V

    Abstract: No abstract text available
    Text: SPP04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A PG-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPP04N60S5 P-TO220-3-1 PG-TO220-3-1 SPP04N60S5 PG-TO220-3-1 Q67040-S4200 04N60S5 5A20V

    04n60s5

    Abstract: SPB04N60S5 SPP04N60S5
    Text: SPP04N60S5 SPB04N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated


    Original     		PDF SPP04N60S5 SPB04N60S5 P-TO263-3-2 P-TO220-3-1 SPPx6N60S5/SPBx6N60S5 Q67040-S4200 04N60S5 04n60s5 SPB04N60S5 SPP04N60S5

    04n60c3

    Abstract: 04N60C3 equivalent smd transistor G18 04n60 04N60C SPB04N60C3 SPA04N60C3 SPP04N60C3 transistor C 331
    Text: SPP04N60C3, SPB04N60C3 SPA04N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original     		PDF SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP04N60C3 04n60c3 04N60C3 equivalent smd transistor G18 04n60 04N60C SPB04N60C3 SPA04N60C3 SPP04N60C3 transistor C 331

    04n60c3

    Abstract: 04N60C 04N60 04N60C3 equivalent SPB04N60C3 SPA04N60C3 SPP04N60C3
    Text: Preliminary data SPP04N60C3, SPB04N60C3 SPA04N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.95 Ω ID 4.5 A • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP04N60C3 Q67040-S4366 04n60c3 04N60C 04N60 04N60C3 equivalent SPB04N60C3 SPA04N60C3 SPP04N60C3

    04n60s5

    Abstract: SPP04N60S5
    Text: SPP04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPP04N60S5 PG-TO220 P-TO220-3-1 Q67040-S4200 04N60S5 04n60s5 SPP04N60S5

    04N60C3

    Abstract: No abstract text available
    Text: Final data SPP04N60C3, SPB04N60C3 SPA04N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.95 Ω ID 4.5 A • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP04N60C3 Q67040-S4366 04N60C3

    04n60c3

    Abstract: Q67040-S4366
    Text: SPP04N60C3, SPB04N60C3 SPA04N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original     		PDF SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP04N60C3 04n60c3 Q67040-S4366

    04n60s5

    Abstract: No abstract text available
    Text: SPP04N60S5 SPB04N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP04N60S5 SPB04N60S5 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4200 Q67040-S4201 04n60s5

    SPB04N60S5

    Abstract: 04N60S5 SPP04N60S5 04N60
    Text: SPP04N60S5 SPB04N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity


    Original     		PDF SPP04N60S5 SPB04N60S5 SPPx6N60S5/SPBx6N60S5 SPP04N60S5 P-TO220-3-1 P-TO263-3-2 04N60S5 Q67040-S4200 SPB04N60S5 04N60S5 04N60

    04n60c2

    Abstract: 04N60 SPA04N60C2 SPB04N60C2 SPP04N60C2 Q67040-S4304
    Text: Final data SPP04N60C2, SPB04N60C2 SPA04N60C2 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge R DS on 0.95 Ω • Periodic avalanche rated ID 4.5 A • Extreme dv/dt rated


    Original     		PDF SPP04N60C2, SPB04N60C2 SPA04N60C2 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP04N60C2 Q67040-S4304 04n60c2 04N60 SPA04N60C2 SPB04N60C2 SPP04N60C2 Q67040-S4304

    smd diode code 18W

    Abstract: 18w smd transistor smd transistor code 18W 04n60c2 Q67040-S4304 SMD Transistor 18W transistor SMD MARKING CODE 18w SDP06S60 SPB04N60C2 SPP04N60C2
    Text: SPP04N60C2 SPB04N60C2 Preliminary data Cool MOS Power Transistor COOLMOS Power Semiconductors Feature Product Summary • New revolutionary high voltage technology · Ultra low gate charge VDS 600 V · Periodic avalanche rated RDS on 0.95 W Extreme d v/dt rated


    Original     		PDF SPP04N60C2 SPB04N60C2 P-TO263-3-2 P-TO220-3-1 Q67040-S4304 04N60C2 Q67040-S4305 smd diode code 18W 18w smd transistor smd transistor code 18W 04n60c2 Q67040-S4304 SMD Transistor 18W transistor SMD MARKING CODE 18w SDP06S60 SPB04N60C2 SPP04N60C2

    04N60S5

    Abstract: SPB04N60S5 SPP04N60S5
    Text: SPP04N60S5 SPB04N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


    Original     		PDF SPP04N60S5 SPB04N60S5 SPPx6N60S5/SPBx6N60S5 P-TO220-3-1 04N60S5 Q67040-S4200 P-TO263-3-2 SPP04N60S5 04N60S5 SPB04N60S5

    04n60c3

    Abstract: No abstract text available
    Text: Preliminary data SPP04N60C3, SPB04N60C3 SPA04N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.95 Ω ID 4.5 A • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP04N60C3 04n60c3

    04n60s5

    Abstract: transistor smd CF RQ AG qd transistor SMD AG qd SMD SIEMENS 230 92 O 04n60 TRANSISTOR SMD MARKING CODE KF marking S5 SMD TRANSISTOR MARKING CODE KF DIODE SMD MARKING CODE KF
    Text: SIEMENS SPP04N60S5 SPB04N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dvfdt rated • Optimized capacitances □ C O L ^ M O S fc P o w e r S e m ic o n d u c to r s


    OCR Scan     		PDF SPPx6N60S5/SPBx6N60S5 SPP04N60S5 SPB04N60S5 P-T0220-3-1 P-T0263-3-2 04N60S5 04N60S5 Q67040-S4200 transistor smd CF RQ AG qd transistor SMD AG qd SMD SIEMENS 230 92 O 04n60 TRANSISTOR SMD MARKING CODE KF marking S5 SMD TRANSISTOR MARKING CODE KF DIODE SMD MARKING CODE KF