SPICE MODEL 740 Search Results

SPICE

Abstract: models
Contextual Info: SPICE MODELS SPICE Model – xx413RAE This lumped-element SPICE model data simulates the frequency-dependent behavior of Coilcraft RF surface mount inductors from 1 MHz to the upper frequency limit shown in the accompanying table. The equivalent lumped element model schematic is

SPICE

Abstract: models
Contextual Info: SPICE MODELS SPICE Model – xx413RAA This lumped-element SPICE model data simulates the frequency-dependent behavior of Coilcraft RF surface mount inductors from 1 MHz to the upper frequency limit shown in the accompanying table. The equivalent lumped element model schematic is

SIR164DP

Abstract: A7282 65060 spice model 740
Contextual Info: SPICE Device Model SiR164DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SiR892DP Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

SPICE

Abstract: models
Contextual Info: Document 158 SPICE Model – 1008HS This lumped-element SPICE model data simulates the frequency-dependent behavior of Coilcraft RF surface mount inductors from 1 MHz to the upper frequency limit shown in the accompanying table. The equivalent lumped element model schematic is

Contextual Info: Document 158 SPICE Model – 1008HS This lumped-element SPICE model data simulates the frequency-dependent behavior of Coilcraft RF surface mount inductors from 1 MHz to the upper frequency limit shown in the accompanying table. The equivalent lumped element model schematic is

SPICE

Abstract: models schematic 5250 Schematics 5250 1008CS
Contextual Info: Document 158 SPICE Model – 1008CS This lumped-element SPICE model data simulates the frequency-dependent behavior of Coilcraft RF surface mount inductors from 1 MHz to the upper frequency limit shown in the accompanying table. The equivalent lumped element model schematic is

423E-03

Contextual Info: Document 158 SPICE Model – 1008CS This lumped-element SPICE model data simulates the frequency-dependent behavior of Coilcraft RF surface mount inductors from 1 MHz to the upper frequency limit shown in the accompanying table. The equivalent lumped element model schematic is

Contextual Info: SPICE Device Model SiR892DP www.vishay.com Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

1227

Contextual Info: SPICE Device Model SiR788DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

SPICE

Abstract: PFL1610
Contextual Info: Document 267 SPICE Model – PFL1610 This lumped-element SPICE model data simulates the frequency-dependent behavior of Coilcraft power inductors within the frequency range shown in the accompanying table for each individual inductor. The data represents de-embedded measurements, as

SPICE

Abstract: variable inductor 1066 0943
Contextual Info: Document 267 SPICE Model – LPS3008 This lumped-element SPICE model data simulates the frequency-dependent behavior of Coilcraft power inductors within the frequency range shown in the accompanying table for each individual inductor. The data represents de-embedded measurements, as

1008HS-330

Contextual Info: Document 158 SPICE Model – 1008HS Table 1. Test Gap This lumped-element SPICE model data simulates the frequency-dependent behavior of Coilcraft RF surface mount inductors from 1 MHz to the upper frequency limit shown in the accompanying tables. Size 0402

1008CS

Contextual Info: Document 158 SPICE Model – 1008CS Table 1. Test Gap This lumped-element SPICE model data simulates the frequency-dependent behavior of Coilcraft RF surface mount inductors from 1 MHz to the upper frequency limit shown in the accompanying tables. Size 0402

Si2305ADS

Abstract: S-81021
Contextual Info: SPICE Device Model Si2305ADS Vishay Siliconix P-Channel 8-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

BZX384C75

Abstract: BZX384C75 PSpice
Contextual Info: VISHAY BZX384C75_PSpice Vishay Semiconductors BZX384C75 Spice Parameters .SUBCKT bzx384_c75 2 1 * * Model Generated by MODPEX * *Copyright c Symmetry Design Systems* * All Rights Reserved * * UNPUBLISHED LICENSED SOFTWARE *

7400 spice model

Abstract: SiE726DF d 1047 d 1047 transistor transistor equivalent book FOR D 1047 S-82127
Contextual Info: SPICE Device Model SiE726DF Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

BZX384C75

Contextual Info: VISHAY BZX384C75_SIN_Spice Vishay Semiconductors BZX384C75_SIN Spice Parameters template bzx384_c75 n2 n1 #* # Model Generated by MODPEX * #Copyright c Symmetry Design Systems* # All Rights Reserved * # UNPUBLISHED LICENSED SOFTWARE *

SUP90N10-09

Contextual Info: SPICE Device Model SUP90N10-09 Vishay Siliconix N-Channel 100-V D-S 200°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUP90N10-09

Abstract: spice model 740
Contextual Info: SPICE Device Model SUP90N10-09 Vishay Siliconix N-Channel 100-V D-S 200°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUM110N10-08

Contextual Info: SPICE Device Model SUM110N10-08 Vishay Siliconix N-Channel 100-V D-S 200°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

KP1837

Abstract: RSS100N03 9475
Contextual Info: SPICE PARAMETER RSS100N03 by ROHM TR Div. * RSS100N03 NMOSFET model * Date: 2006/10/11 * This model includes a diode between source and drain. *D G S .SUBCKT RSS100N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6

a798

Abstract: A 798 SUP90N10-09 spice model 740
Contextual Info: SPICE Device Model SUP90N10-09 Vishay Siliconix N-Channel 100-V D-S 200°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: SiR808DP_GE3_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,