Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SPA2118 Search Results

    SPA2118 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPA-2118 RF Micro Devices RF Amplifiers, RF/IF and RFID, IC AMP HBT GAAS 850MHZ 8-SOIC Original PDF
    SPA-2118 Sirenza Microdevices 850 MHz 1 Watt Power Amplifier with Active Bias Original PDF
    SPA-2118 Sirenza Microdevices 850 Mhz 1 Watt Power Amplifier With Active Bias Original PDF
    SPA-2118 Stanford Microdevices 850 MHz, 1 Watt power amplifier with active bias. Original PDF
    SPA-2118Z RF Micro Devices RF Amplifiers, RF/IF and RFID, IC AMP HBT GAAS 850MHZ 8-SOIC Original PDF

    SPA2118 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    lot code RFMD

    Abstract: ECB-101161
    Text: SPA2118Z SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Features Optimum Technology Matching Applied • VC1 VBIAS Active Bias SiGe BiCMOS GaAs pHEMT


    Original
    PDF SPA2118Z 850MHz SPA2118Z 950MHz ECB-101161 DS120502 lot code RFMD

    Untitled

    Abstract: No abstract text available
    Text: SPA2118Z SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic


    Original
    PDF SPA2118Z 850MHz SPA2118Z LL1608-FS 1008HQ MCR03

    Untitled

    Abstract: No abstract text available
    Text: SPA2118Z SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic


    Original
    PDF SPA2118Z 850MHz SPA2118Z MCR03 ECB-101161 DS110720

    AT880

    Abstract: lot code RFMD
    Text: SPA2118Z SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features Optimum Technology Matching Applied • VC1 DE VBIAS Active Bias


    Original
    PDF SPA2118Z 850MHz SPA2118Z ECB-101161 DS111219 AT880 lot code RFMD

    Untitled

    Abstract: No abstract text available
    Text: SPA2118Z SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic


    Original
    PDF SPA2118Z 850MHz SPA2118Z MCR03 ECB-101161 DS121024

    MCH18

    Abstract: MCR03 SPA-2118 TAJB106K020R SPA2118 2118
    Text: SPA-2118 Z SPA-2118(Z) 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS RoHS Compliant and Pb-Free Product (Z Part Number) Package: ESOP-8 Product Description Features RFMD’s SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic


    Original
    PDF SPA-2118 850MHz EDS-102012 SPA-2118" SPA-2118Z" MCH18 MCR03 TAJB106K020R SPA2118 2118

    2005Z

    Abstract: TRANSISTOR a105 a105 transistor 2005 Z 2005.z SXA3318BZ JESD22-A113C spa2318z JESD22-A-102 JESD22-A104B
    Text: Reliability Qualification Report SPA-2318 - SnPb Plated SPA-2318Z - Matte Sn, RoHS compliant Products Qualified by Similarity SPA-1118 SPA-1218 SPA-1318 SPA-2118 SXA-3318B SPA-1118Z SPA-1218Z SPA-1318Z SPA-2118Z SXA-3318BZ The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for


    Original
    PDF SPA-2318 SPA-2318Z SPA-1118 SPA-1218 SPA-1318 SPA-2118 SXA-3318B SPA-1118Z SPA-1218Z SPA-1318Z 2005Z TRANSISTOR a105 a105 transistor 2005 Z 2005.z SXA3318BZ JESD22-A113C spa2318z JESD22-A-102 JESD22-A104B

    BALUN-0900BL18B100

    Abstract: rcp890a05 UHF rfid reader RCP890 AS399X circuit micro controller interface between rfid 748431090 748131009 C8051F340 as3991 application note
    Text: Hardware Description of AS399x “ROGER” - UHF RFID Reader System Demo Kit Reference Rev 1.5 March 2010 Proprietary and Confidential 1 1 Introduction. 2


    Original
    PDF AS399x BALUN-0900BL18B100 rcp890a05 UHF rfid reader RCP890 AS399X circuit micro controller interface between rfid 748431090 748131009 C8051F340 as3991 application note

    MCH18

    Abstract: MCR03 SPA-2118 TAJB106K020R IC1150
    Text: Preliminary Product Description SPA-2118 Sirenza Microdevices’ SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial


    Original
    PDF SPA-2118 SPA-2118 IS-95 EDS-102012 MCH18 MCR03 TAJB106K020R IC1150

    SPA-2118

    Abstract: TRANSISTOR 726 transistor a 726 ECB-101161
    Text: Preliminary Product Description SPA-2118 Stanford Microdevices’ SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial


    Original
    PDF SPA-2118 SPA-2118 IS-95 AN-029 EDS-102012 TRANSISTOR 726 transistor a 726 ECB-101161

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Description SPA-2118 Stanford Microdevices’ SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial


    Original
    PDF SPA-2118 SPA-2118 IS-95 Powe45° AN-029 EDS-102012

    SPA-2118

    Abstract: MCH18 MCR03 TAJB106K020R SPA2118
    Text: Product Description SPA-2118 Sirenza Microdevices’ SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial


    Original
    PDF SPA-2118 SPA-2118 IS-95 EDS-102012 MCH18 MCR03 TAJB106K020R SPA2118

    RF5632

    Abstract: PNP-1090-P22 UMX-254-D16-G UMX-333-D16-G RF1194 UMX-406-D16 SPF-5043Z UMX-519-D16-G SHF-0289 spf-5122z
    Text: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Description SPA-2118 Sirenza Microdevices’ SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial


    Original
    PDF SPA-2118 SPA-2118 IS-95 EDS-102012

    RCP890

    Abstract: UHF rfid reader
    Text: austriamicrosystems AG is now ams AG The technical content of this austriamicrosystems application note is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com


    Original
    PDF AS399x RCP890 UHF rfid reader