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ams OSRAM Group GD-QSSPA1.14-UOVK-W4-1-350-R18 LED OSCONIQ P 3030 BLU 449NM SMD
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DigiKey	GD-QSSPA1.14-UOVK-W4-1-350-R18	Reel	3,600		900	1 - 10 - 100 - 1000 $0.60001 10000 $0.51389	Buy Now
ams OSRAM Group GT-QSSPA1.13-LSLU-T1T6-1-350-R18 67000
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DigiKey	GT-QSSPA1.13-LSLU-T1T6-1-350-R18	Reel	1,800		900	1 - 10 - 100 - 1000 $0.62992 10000 $0.54051	Buy Now
ams OSRAM Group GV-QSSPA1.13-JZKZ-V1V6-1-350-R18 67000
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DigiKey ()	GV-QSSPA1.13-JZKZ-V1V6-1-350-R18	Reel	1,800		900	1 - 10 - 100 - 1000 $0.63976 10000 $0.54927	Buy Now
	GV-QSSPA1.13-JZKZ-V1V6-1-350-R18	Digi-Reel	1,800		1	1 $1.48 10 $1.047 100 $0.787 1000 $0.787 10000 $0.787	Buy Now
	GV-QSSPA1.13-JZKZ-V1V6-1-350-R18	Cut Tape	1,800		1	1 $1.48 10 $1.047 100 $0.787 1000 $0.787 10000 $0.787	Buy Now
ams OSRAM Group GB-QSSPA1.13-HYJX-B1B4-1-350-R18 67000
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DigiKey ()	GB-QSSPA1.13-HYJX-B1B4-1-350-R18	Digi-Reel	1,552		1	1 $1.4 10 $0.987 100 $0.74 1000 $0.74 10000 $0.74	Buy Now
	GB-QSSPA1.13-HYJX-B1B4-1-350-R18	Cut Tape	1,552		1	1 $1.4 10 $0.987 100 $0.74 1000 $0.74 10000 $0.74	Buy Now
	GB-QSSPA1.13-HYJX-B1B4-1-350-R18	Reel	900		900	1 - 10 - 100 - 1000 $0.60001 10000 $0.51389	Buy Now
ams OSRAM Group GY-QSSPA1.13-KSKU-5F5G-1-350-R18 LED OSCONIQ P 3030 YELLOW SMD
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DigiKey	GY-QSSPA1.13-KSKU-5F5G-1-350-R18	Reel	900		900	1 - 10 - 100 - 1000 $0.60001 10000 $0.51389	Buy Now

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SPA11 Datasheets (25)

Part	Manufacturer	Description	Datasheet Type	PDF
SPA-1118	RF Micro Devices	RF Amplifiers, RF/IF and RFID, IC AMP HBT GAAS 850MHZ 8-SOIC	Original	PDF
SPA-1118	Sirenza Microdevices	850 MHz 1 Watt Power Amp with Active Bias	Original	PDF
SPA-1118	Sirenza Microdevices	850 MHz 1 Watt Power Amplifier with Active Bias	Original	PDF
SPA-1118	Stanford Microdevices	850 MHz 1 watt power amplifier with active bias.	Original	PDF
SPA-1118Z	RF Micro Devices	RF Amplifiers, RF/IF and RFID, IC AMP HBT GAAS 850MHZ 8-SOIC	Original	PDF
SPA-1118Z	Sirenza Microdevices	850 MHz 1 Watt Power Amplifier with Active Bias	Original	PDF
SPA11N60C2	Infineon Technologies	CoolMOS Power MOSFET, 600V, TO-220FP, RDSon=0.38 ?, 5.5A	Original	PDF
SPA11N60C2	Infineon Technologies	Cool MOS Power Amp., 650V 11A 33W, MOS-FET N-Channel enhanced	Original	PDF
SPA11N60C3	Infineon Technologies	N-Channel MOSFETs (>500V - 900V); Package: PG-TO220-3; V_DS (max): 600.0 V; Package: TO-220 FullPAK; R_DS(ON) @ T_J=25°C V_GS=10: 380.0 mOhm; I_D(max) @ T_C=25°C: 11.0 A; I_Dpuls (max): 33.0 A;	Original	PDF
SPA11N60C3	Infineon Technologies	Cool MOS Power Amp., 650V 11A 33W, MOS-FET N-Channel enhanced	Original	PDF
SPA11N60C3	Infineon Technologies	CoolMOS Power MOSFET, 600V, TO-220FP, RDSon=0.38 ?, 5.5A	Original	PDF
SPA11N60C3	Infineon Technologies	Cool MOS Power Transistor	Original	PDF
SPA11N60C3E8152	Infineon Technologies	Transistor Mosfet N-CH 600V 0.021A 3 pin SOT-23 T/R	Original	PDF
SPA11N60C3IN	Infineon Technologies	MOSFET N-CH 650V 11A TO220-3-31	Original	PDF

SPA11N60C3XKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 11A TO220-3	Original	PDF
SPA11N60CFD	Infineon Technologies	CoolMOS Power Transistor	Original	PDF
SPA11N60CFDXKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 11A TO220-3	Original	PDF
SPA11N65C3	Infineon Technologies	N-Channel MOSFETs (>500V - 900V); Package: PG-TO220-3; V_DS (max): 650.0 V; Package: TO-220 FullPAK; R_DS(ON) @ T_J=25°C V_GS=10: 380.0 mOhm; I_D(max) @ T_C=25°C: 11.0 A; I_Dpuls (max): 33.0 A;	Original	PDF
SPA11N65C3	Infineon Technologies	Cool MOS Power Transistor	Original	PDF
SPA11N65C3XKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 11A TO-220	Original	PDF

SPA11 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
11N60C3 Abstract: transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3 Contextual Info: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated	Original	SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 11N60C3 transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3	PDF
Contextual Info: SPA1118Z SPA1118Z 850MHz 1Watt Power Amplifier with Active Bias 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic	Original	SPA1118Z 850MHz 850MHz SPA1118Z MCH18 100nH, 1008HQ	PDF
SPA11N60C2 Abstract: AN-TO220-3-31-01 11N60C2 11N60C GPT09301 SDP06S60 Contextual Info: Preliminary data SPA11N60C2 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V •=Periodic avalanche rated R DS on 0.38 Ω • Extreme dv/dt rated	Original	SPA11N60C2 P-TO220-3-31 P-TO220-3-31 Q67040-S4332 11N60C2 SPA11N60C2 AN-TO220-3-31-01 11N60C2 11N60C GPT09301 SDP06S60	PDF
11n80c3 Abstract: SPA11N80C3 Contextual Info: SPP11N80C3 SPA11N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPP11N80C3 SPA11N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4438 11N80C3 11n80c3 SPA11N80C3	PDF
11n60c3 Abstract: transistor 11n60c3 SPA11N60C3E8185 SPI11N60C3 E8185 Contextual Info: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220	Original	SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 P-TO220-3-31 PG-TO220FP PG-TO262 PG-TO220 PG-TO-220-3-31 11n60c3 transistor 11n60c3 SPA11N60C3E8185 SPI11N60C3	PDF
SPA11N80C3 Contextual Info: SPA11N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.45 Ω • Extreme dv/dt rated	Original	SPA11N80C3 P-TO220-3-31 11N80C3 P-TO220-3-31 Q67040-S4439 SPA11N80C3	PDF
11n80c3 Contextual Info: SPA11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPA11N80C3 PG-TO220-3 11N80C3 11n80c3	PDF
11n60c3 Abstract: 11N60C SPA11N60C3 equivalent SPA11N60C3E8185 11N60 E8185 SPP11N60C3 SPA11N60C3 SPD06S60 transistor 11n60c3 Contextual Info: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220	Original	SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31 11n60c3 11N60C SPA11N60C3 equivalent SPA11N60C3E8185 11N60 E8185 SPP11N60C3 SPD06S60 transistor 11n60c3	PDF
11n60c3 Abstract: SPA11N60C3E8185 11N60C SPA11N60C3 equivalent SPA11N60C3 11N60 SPI11N60C3 transistor 11n60c3 Q67040-S4395 SPP11N60C3 Contextual Info: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220	Original	SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31 11n60c3 SPA11N60C3E8185 11N60C SPA11N60C3 equivalent 11N60 SPI11N60C3 transistor 11n60c3 Q67040-S4395 SPP11N60C3	PDF
11n60cfd Abstract: JESD22 PG-TO220-3-31 SP000216317 SPA11N60CFD D8172 Contextual Info: SPA11N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.44 Ω 11 A I D1) • Extremely low reverse recovery charge • Ultra low gate charge	Original	SPA11N60CFD PG-TO220-3-31 O-220-3-31 SP000216317 11N60CFD 11n60cfd JESD22 PG-TO220-3-31 SP000216317 SPA11N60CFD D8172	PDF
11N80C3 Contextual Info: SPP11N80C3 SPA11N80C3 Final data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω 11 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31	Original	SPP11N80C3 SPA11N80C3 P-TO220-3-31 P-TO220-3-1 Q67040-S4438 11N80C3 11N80C3	PDF
11N65C3 Abstract: 11N65C 11n65 SPA11N65C3 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 7A SP000216318 SPP11N65C3 SPI11N65C3 11n6 Contextual Info: SPP11N65C3,SPA11N65C3 SPI11N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262 V DS 650 V RDS on 0.38 Ω ID 11 A PG-TO220FP PG-TO220 • Extreme dv/dt rated	Original	SPP11N65C3 SPA11N65C3 SPI11N65C3 PG-TO262 PG-TO220FP PG-TO220 SPP11N65C3 Q67040-S4557 11N65C3 11N65C3 11N65C 11n65 SPA11N65C3 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 7A SP000216318 SPI11N65C3 11n6	PDF
11N65C3 Contextual Info: SPP11N65C3,SPA11N65C3 SPI11N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262 V DS 650 V RDS on 0.38 Ω ID 11 A PG-TO220FP PG-TO220 • Extreme dv/dt rated	Original	SPP11N65C3 SPA11N65C3 SPI11N65C3 PG-TO262 PG-TO220FP PG-TO220 SPP11N65C3 Q67040-S4557 11N65C3 11N65C3	PDF
11N60C Abstract: 11N60CFD Contextual Info: SPA11N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.44 Ω 11 A I D1) • Extremely low reverse recovery charge • Ultra low gate charge	Original	SPA11N60CFD PG-TO220-3-31 O-220-3-31 SP000216317 11N60CFD 11N60C 11N60CFD	PDF

Contextual Info: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge R DS on 0.38 Ω •=Periodic avalanche rated ID	Original	SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3	PDF
11N65C3 Abstract: 11n65 11N65C SPP11N65C3 Q67040-S4554 MIL-STD-750-1038 Q67040-S4561 AN-TO220-3-31-01 TRANSISTOR SMD MARKING CODE 7A SPA11N65C3 Contextual Info: SPP11N65C3, SPA11N65C3 SPI11N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 650 V RDS on 0.38 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated P-TO262-3-1 P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated	Original	SPP11N65C3, SPA11N65C3 SPI11N65C3 P-TO262-3-1 P-TO220-3-31 P-TO220-3-1 SPP11N65C3 Q67040-S4557 11N65C3 11n65 11N65C SPP11N65C3 Q67040-S4554 MIL-STD-750-1038 Q67040-S4561 AN-TO220-3-31-01 TRANSISTOR SMD MARKING CODE 7A SPA11N65C3	PDF
Q67040-S4408 Abstract: 11N60C AR1010 Contextual Info: SPA11N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated	Original	SPA11N60C3 P-TO220-3-31 11N60C3 P-TO220-3-31 Q67040-S4408 Q67040-S4408 11N60C AR1010	PDF
11n60c2 Abstract: transistor 11n60c2 spa 11n60c2 Contextual Info: Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated ID • Extreme dv/dt rated	Original	SPP11N60C2, SPB11N60C2 SPA11N60C2 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP11N60C2 11n60c2 transistor 11n60c2 spa 11n60c2	PDF
11N60C3 Abstract: transistor 11n60c3 Contextual Info: SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO263-3-2	Original	SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 11N60C3 transistor 11n60c3	PDF
11N60C3 Abstract: transistor 11n60c3 Contextual Info: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated	Original	SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 11N60C3 transistor 11n60c3	PDF
11N80C3 Abstract: 11n80c Contextual Info: SPP11N80C3 SPA11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPP11N80C3 SPA11N80C3 P-TO220-3-31 P-TO-220-3-31: P-TO220-3-1 Q67040-S4438 11N80C3 11n80c	PDF
SP000216312 Abstract: 11N6 Contextual Info: SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3 PG-TO220 • Extreme dv/dt rated	Original	SPP11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3 PG-TO220 PG-TO-220-3-31: SPI11N60C3 SP000216312 11N6	PDF
transistor 11n60c3 Abstract: SPP11N60C3 Q67040-S4408 11N60C3 11N60C Contextual Info: SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 • Extreme dv/dt rated	Original	SPP11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 PG-TO-220-3-31: SPI11N60C3 transistor 11n60c3 Q67040-S4408 11N60C3 11N60C	PDF
11n80c3 Contextual Info: SPA11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPA11N80C3 PG-TO220-3 11N80C3 11n80c3	PDF

SPA11 Search Results

SPA11 Price and Stock

ams OSRAM Group GD-QSSPA1.14-UOVK-W4-1-350-R18

ams OSRAM Group GT-QSSPA1.13-LSLU-T1T6-1-350-R18

ams OSRAM Group GV-QSSPA1.13-JZKZ-V1V6-1-350-R18

ams OSRAM Group GB-QSSPA1.13-HYJX-B1B4-1-350-R18

ams OSRAM Group GY-QSSPA1.13-KSKU-5F5G-1-350-R18

SPA11 Datasheets (25)

SPA11 Datasheets Context Search

11N60C3

SPA11N60C2

11n80c3

11n60c3

SPA11N80C3

11n80c3

11n60c3

11n60c3

11n60cfd

11N80C3

11N65C3

11N65C3

11N60C

11N65C3

Q67040-S4408

11n60c2

11N60C3

11N60C3

11N80C3

SP000216312

transistor 11n60c3

11n80c3