SP12 PACKAGE TYPE 6 Search Results

transistor sp 772

Contextual Info: Power Transistor RT232 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 33dBm Typ. @2.5GHz P3dB = 36dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 19dB(Typ.)@900MHz G1dB = 15dB(Typ.)@2.14GHz

Contextual Info: Power Transistor RT232 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 33dBm Typ. @2.5GHz P3dB = 36dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 19dB(Typ.)@900MHz G1dB = 15dB(Typ.)@2.14GHz

5252 F 1108

Abstract: 4550J TO220FM 12015C 5252 F 1104 0345A msp18 E1113 K2613 SP1211
Contextual Info: B 2 S A series P 5 5 6 8 8 8 6 6 6 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 6 9 5 5 5 5 5 5 5 5 5 6 5 5 8 8 8 6 P*c*^aeoda TO-92 TO-92 TO-92 TO-126M TO-126M TO-126M TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92

Contextual Info: Weller Marksman Mini Iron 12 Watt Product Details Catalog No. SP12 UPC Code 037103479716 Type Non-temperature Controlled Wattage 12 W Temperature 750° F Range Cord Length 6 ft. Components MT70 Supplied Packaging Peg Hook/Retail Packaging Tech. Spec. Solder_Safety_Warnings.pdf

12V RELAY 5 PIN DIAGRAM spdt

Abstract: SP12SELQD SP12SRLQD relay socket lr38486 LR38486 5 pin 12v relay pin drawing diagrams schematic AC inductive proximity sensor inductive proximity sensor transistor schematic AP12SR SP12 PACKAGE TYPE 6
Contextual Info: t ns uc tio od ca Pr ne ifi Li pec S MAXI-AMP System Stand-alone sensor control modules • Versatile, cost-effective sensor control modules: models available for use with most Banner photoelectric sensors • Power supply, photoelectric amplifier CD and CM

6AM12

Abstract: SP12TA 2sk970 SP12 PACKAGE TYPE 6 2SK971 4AK16 2SK972 2SK973 2SK97-1 4AK15
Contextual Info: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching

Contextual Info: Grounding Connectors Bronze Service Post Connectors Type SP1 Types SP1 and SP2 Dimensions–Inches V Conductor Size Range Wire Diameter Range (In.) Stud Size SP1-8-C SP1-8L-C #12 Sol.—#8 Str. .081–.146 1/4–20 .50 .50 .50 1.00 SP1-7-C SP1-7L-C #8 Sol.—#7 Str.

Contextual Info: RWDUIT Grounding Connectors Bronze Service Post Connectors Type SPl Male-One Cable For grounding one conductor to steel structures, fence posts or transformers For tapping from bus bar Made from hard drawn copper rod U.L. Listed per 467 for direct burial Part

SP24L

Abstract: SP12 PACKAGE TYPE 6
Contextual Info: RWDUIT Grounding Connectors Bronze Service Post Connectors Type SP1 MEW / Male-One Cable • For grounding one conductor to steel structures, fence posts or transformers • For tapping from bus bar • Made from hard drawn copper rod • UL LISTED per 467 for

transistor z3

Abstract: TRANSISTOR Z4
Contextual Info: Power Transistor RT230PD Product Features Application • 50 ~ 4000 MHz • 18dB Gain@900MHz • 34.5dBm P1dB@900MHz • 47dBm Output IP3 • GaAs HFET • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier • ISM • MMDS • Wi-Fi, Wi-max

2SK1778

Abstract: 2SK971 2SK970 2SK972 2SK973 2SK975 4AK15 4AK16 4AK17 4AK18
Contextual Info: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching

2SK1275

Abstract: 4AM14 6am12 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16
Contextual Info: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching

2SK1778

Abstract: 2sk1299 4AM12 transistor 2sk1304 2sj177 4AK22 2SK1919 2SK971 transistor 2sk 2SK972
Contextual Info: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching

HITACHI Power MOSFET Arrays

Abstract: 2sk1299 2SK975 2sk1306 2SK1919 2SK970 2SK971 2SK972 2SK973 4AK15
Contextual Info: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching

2SK1254

Abstract: 2sj177 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16 4AK17
Contextual Info: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully m oulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching

2SH14

Abstract: 2SH21 2SH11 2SH19 2SK1056 6AM13 4AK19
Contextual Info: POWER MOS FET •G eneral amplifier Package code Type No. -tas 2SK1197 TO-3P 2SJ160 2SJ161 2SJ162 2SJ351 2SJ352 to Ratings Vos* j 10 Vosx (V)| «A) 100 1 0.5 -7 -120 -7 -140 -7 -160 -8 -180 -200 ! -8 Characteristics Mai ResfO» Ciss Status (S itili. <PF)«W>

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

transistor C4

Contextual Info: Power Transistor RT230PD Product Features Application • 50 ~ 4000 MHz • 18dB Gain@900MHz • 34.5dBm P1dB@900MHz • 47dBm Output IP3 • GaAs HFET • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier • ISM • MMDS • Wi-Fi, Wi-Max

TRANSISTOR Z4

Abstract: transistor Z2 transistor r47 transistor 1608 transistor z5 transistor z4 n transistor z4 51 transistor z3 rt230pd IRF 1470
Contextual Info: Power Transistor RT230PD Product Features Application • 50 ~ 4000 MHz • 18dB Gain@900MHz • 34.5dBm P1dB@900MHz • 47dBm Output IP3 • GaAs HFET • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier • ISM • MMDS • Wi-Fi, Wi-Max

Contextual Info: MMIC AP2301 `Product Features Application • Small size • SMD Type Package • NO matching circuit needed • High efficiency • Dual supply voltage • Higher linearity • 12 pin Air cavity package • Higher productivity • Lower manufacturing cost

Tsi578

Abstract: Tsi577 HSBGA tsi576 MPC8560 SP10 SP11 SP12 SP13 SP14
Contextual Info: Tsi577 Serial RapidIO Switch Features Serial RapidIO Interfaces • • • • 40 Gbps aggregate bandwidth Low latency with cut-through capability Enhanced SerDes for low power solution RapidIO Interconnect Specification Revision 1.3 compliant • High performance hardware multicast

Tsi568A

Abstract: SP10 SP11 SP12 SP13 SP14 SP15 FCBGA
Contextual Info: Tsi568A Serial RapidIO Switch • • • • Bandwidth of up to 80 Gbps full duplex Low latency with cut-through capability Individual port power down RapidIO Interconnect Specification Revision 1.2 compliant The Tsi568A enhances system scalability through device configuration and provides

tsi578

Abstract: Tsi568A SP14 SP15 SP10 SP11 SP12 SP13
Contextual Info: Tsi578 Serial RapidIO Switch • Error management extensions – Proactive issue notification • Port flexibility fulfills multiple I/O bandwidth requirements: – Up to eight 4x mode ports or sixteen 1x mode ports – Port frequency configuration to 1.25,

hitachi mosfet audio

Abstract: D4L DIODE 2SK2830 2SK2225 2SJ214LS 2SK1919LS 2sk2829 Hitachi MOSFET 2SK1058 transistors 2SK1317
Contextual Info: Power MOSFET Quick Reference Literature Order Number Revision Number Hitachi Semiconductor Author Name When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole