Untitled
Abstract: No abstract text available
Text: Si1029X Vishay Siliconix Complementary N- and P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 60 - 60 RDS(on) () ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • Halogen-free According to IEC 61249-2-21
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Si1029X
2002/95/EC
SC-89
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si1016CX www.vishay.com Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 -20 RDS(on) (Ω) ID (A) 0.396 at VGS = 4.5 V 0.50 Qg (TYP.) • High-side switching • Ease in driving switches
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Si1016CX
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si1035X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 8 at VGS = - 4.5 V
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Si1035X
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400
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Si1016X
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si1072X Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) Qg (Typ.) 0.093 at VGS = 10 V 1.3a 1.2 5.41 0.129 at VGS = 4.5 V • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si1072X
2002/95/EC
SC-89
Si1072X-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si1050X Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) () ID (A) 0.086 at VGS = 4.5 V 1.34a 0.093 at VGS = 2.5 V 1.29 0.102 at VGS = 1.8 V 1.23 0.120 at VGS = 1.5 V 0.7 Qg (Typ.) 7.1 • Halogen-free According to IEC 61249-2-21
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Si1050X
2002/95/EC
SC-89
Si1050X-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si1034X Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.5 V Rated
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Si1034X
2002/95/EC
SC-89
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si1073X Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.173 at VGS = - 10 V - 0.98a 0.243 at VGS = - 4.5 V - 0.83 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si1073X
2002/95/EC
SC-89
Si1073X-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SRA2202
Abstract: SRC1202 SUR511EF
Text: SUR511EF Semiconductor NPN/PNP Epitaxial Planar Silicon Transistor Description • Digital transistor Features • Both SRC1202 chip and SRA2202 chip in SOT-563F package • With built-in bias resistors Ordering Information Type NO. SUR511EF Marking BX Package Code
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SUR511EF
SRC1202
SRA2202
OT-563F
OT-563F
KST-J010-000
Input50V,
-10mA
SUR511EF
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J004
Abstract: SRA2205 SUR506EF
Text: SUR506EF Semiconductor Epitaxial Planar Type PNP Silicon Transistor Descriptions • Digital transistor Features • Two SRA2205 chips in SOT-563F package • With built-in bias resistors Ordering Information Type NO. Marking Package Code SUR506EF 88 SOT-563F
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SUR506EF
SRA2205
OT-563F
OT-563F
KST-J004-001
-10mA
-10mA,
J004
SUR506EF
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SS TRANSISTOR
Abstract: SRA2204 SUR502EF TRANSISTOR MARKING CODE ss
Text: SUR502EF Semiconductor Epitaxial Planar Type PNP Silicon Transistor Descriptions • Digital transistor Features • Two SRA2204 chips in SOT-563F package • With built-in bias resistors Ordering Information Type NO. SUR502EF Marking SS Package Code SOT-563F
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SUR502EF
SRA2204
OT-563F
OT-563F
KST-J002-001
-10mA
-10mA,
SS TRANSISTOR
SUR502EF
TRANSISTOR MARKING CODE ss
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Untitled
Abstract: No abstract text available
Text: SOT-563F Tape and Reel Data SOT-563F Packaging Configuration: Figure 1.0 Packaging Description: SOT-563F parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated
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OT-563F
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BC847S
Abstract: BC857S FFB2222A FFB2227A FFB2907A FFB3904 FFB3906 FFB3946 MMPQ3904
Text: Discrete Small Signal Hybrid Products VCEO V VCBO (V) VEBO (V) IC hFE Saturation Voltage Max (A) Min Max @VCE (V) @IC (mA) VCE (sat) (V) @IC (mA) @IB (mA) SC70 NPN Configuration FFB3904 40 60 6 0.2 100 300 1 10 0.3 50 5 FFB2222A 40 75 5 0.5 100 300 10 150
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FFB3904
FFB2222A
BC847S
FFB2227A
FFB3946
FFB3906
FMB3946
FMBS549
FMB3906
FMB200
BC847S
BC857S
FFB2222A
FFB2227A
FFB2907A
FFB3904
FFB3906
FFB3946
MMPQ3904
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Untitled
Abstract: No abstract text available
Text: FJYF2906 FJYF2906 PNP Multi-Chip General Purpose Amplifier C1 E1 • Collector-Emitter Voltage: VCEO = 40V • Amplifier and Switching Application • E2 is on pin 1 C2 B1 B2 Pin1 E2 SOT-563F Mark: S1 Absolute Maximum Ratings TA=25°C unless otherwise noted
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FJYF2906
OT-563F
FJYF2906
FJYF2906TF
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circuit diagram wireless spy camera
Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
Text: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint
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DFN1006D-2
OD882D)
DFN1010D-3
OT1215)
DFN2020MD-6
OT1220)
DFN1608D-2
OD1608)
DSN0603
OD962)
circuit diagram wireless spy camera
PDTB123Y
IP4303CX4
dual cc BAW62
3267 tsop6
PCMF2DFN1
BST60
PUMD4
PDTB123E
PDTA143
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Untitled
Abstract: No abstract text available
Text: Si1040X Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 8 RDS(on) () ID (A) 0.625 at VIN = 4.5 V ± 0.43 0.890 at VIN = 2.5 V ± 0.36 1.25 at VIN = 1.8 V ± 0.3 Si1040X 4 2, 3 S2 D2 Q2 • Halogen-free According to IEC 61249-2-21
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Si1040X
2002/95/EC
SC89-6
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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equivalent of SL 100 NPN Transistor
Abstract: No abstract text available
Text: SUR543EF Semiconductor Epitaxial planar NPN silicon transistor Descriptions • Dual chip digital transistor Features • Two SRC1204 chips in SOT-563F package • Simplify circuit design • Reduce a quantity of parts and manufacturing process Ordering Information
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SUR543EF
SRC1204
OT-563F
SUR543EF
OT-563F
KSD-R5U010-000
KSD-R5U010-000
equivalent of SL 100 NPN Transistor
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SRA2205
Abstract: SUR506EF
Text: SUR506EF Epitaxial planar PNP silicon transistor Descriptions • Dual chip digital transistor Features • Two SRA2205 chips in SOT-563F package • Simplify circuit design • Reduce a quantity of parts and manufacturing process Package : SOT-563F Ordering Information
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SUR506EF
SRA2205
OT-563F
OT-563F
KSD-R5U003-001
SUR506EF
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SBT3904
Abstract: SBT3906 SUT394EF
Text: SUT394EF Epitaxial planar NPN/PNP silicon transistor Description • Complex type bipolar transistor Feature • Small package save PCB area • Reduce quantity of parts and mounting cost • Both SBT3906 chip and SBT3904 chip in SOT-563F package Package : SOT-563F
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SUT394EF
SBT3906
SBT3904
OT-563F
OT-563F
KSD-T5U006-001
SUT394EF
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2SC5343
Abstract: SUT507EF 2SC5343 equivalent
Text: SUT507EF Semiconductor Epitaxial planar NPN silicon transistor Description • Complex type bipolar transistor Feature • Very small package save PCB area • Reduce quantity of parts and mounting cost • Two 2SC5343 chips in SOT-563F package Ordering Information
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SUT507EF
2SC5343
OT-563F
OT-563F
KSD-T5U001-000
SUT507EF
2SC5343 equivalent
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Untitled
Abstract: No abstract text available
Text: 2N7002V/VA N-Channel Enhancement Mode Field Effect Transistor Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package
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2N7002V/VA
2N7002V/VA
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15KV
Abstract: No abstract text available
Text: SDT6D8EF Semiconductor ESD Protection Diode Features • Transient protection for data lines to IEC 61000-4-2 ESD 15KV(air), 8KV(contact) • Small package for use in portable equipment. Applications • ESD Protection Ordering Information Type NO. Marking
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OT-563F
KSD-D5U001-000
15KV
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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thermistor KSD201
Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™
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