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Abstract: No abstract text available
Text: Package outline Eared flanged ceramic package; 2 leads; 2 mounting holes SOT502D 0.4 mm gauge plane D A Lp F D1 detail X U1 B q v w2 b A c B X 1 3 H U2 E1 p w1 2 A A E B Q θ 5 Dimensions Unit 1 A b c D D1 E max 4.72 12.83 0.16 20.02 19.96 9.53 nom min 3.43 12.57 0.10 19.61 19.66 9.27
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OT502D
sot502d
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Abstract: No abstract text available
Text: BLA6G1011-200R; BLA6G1011L S -200RG Power LDMOS transistor Rev. 4 — 9 November 2011 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Test information
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BLA6G1011-200R;
BLA6G1011L
-200RG
OT502A
OT502C
OT502D
BLA6G1011-200R
L-200RG
LS-200RG
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sot979
Abstract: No abstract text available
Text: Ceramic packages for RF Power Transistors SOT975B L x W x H (mm SOT538A (5.5 x 4.1 x 2.2 (mm) SOT1227A (7.1 x 6.9 x 3.3 (mm) SOT975C (7.1 x 6.9 x 3.3 (mm) (14.0 x 4.1 x 2.9 (mm) SOT1227B SOT467B (9.7 x 5.8 x 4.3 (mm) SOT467C (20.3 x 5.8 x 4.3 (mm)
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OT975B
OT538A
OT1227A
OT975C
OT1227B
OT467B
OT467C
OT1228A
OT1228B
OT608A
sot979
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BB 509 varicap diode
Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s
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BGU7073
Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
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Untitled
Abstract: No abstract text available
Text: BLA6G1011-200R; BLA6G1011L S -200RG Power LDMOS transistor Rev. 4 — 9 November 2011 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Test information
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Original
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BLA6G1011-200R;
BLA6G1011L
-200RG
OT502A
OT502C
OT502D
BLA6G1011-200R
L-200RG
LS-200RG
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