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    SOT343R Search Results

    SOT343R Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SOT343R Philips Semiconductors SOT343R Original PDF
    SOT343R_115 NXP Semiconductors CMPAK-4; Tape reel SMD; standard product orientation 12NC ending 115 Original PDF
    SOT343R_135 NXP Semiconductors CMPAK-4; Tape reel SMD; standard product orientation 12NC ending 135 Original PDF

    SOT343R Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: CM PA K -4 SOT343R CMPAK-4; Tape reel SMD; standard product orientation 12NC ending 135 Rev. 1 — 13 November 2012 Packing information 1. Packing method Printed plano box Barcode label Reel Tape Barcode label Circular sprocket holes opposite the label side of reel


    Original
    OT343R msc074 OT343R PDF

    Untitled

    Abstract: No abstract text available
    Text: CM PA K -4 BFG424W NPN 25 GHz wideband transistor Rev. 2 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.


    Original
    BFG424W OT343R PDF

    Untitled

    Abstract: No abstract text available
    Text: CM PA K-4 BFG424W NPN 25 GHz wideband transistor Rev. 2 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.


    Original
    BFG424W OT343R PDF

    RF Wideband Transistors

    Abstract: No abstract text available
    Text: PACKAGE OUTLINES Package SOT23 SOT54 SOT54variant SOT89 SOT122A SOT143B SOT143R SOT172A1 SOT172A2 SOT223 SOT323 SOT343N SOT343R SOT353 SOT363 Surface-mount yes no no yes no yes yes no no yes yes yes yes yes yes Page . . . . . . . .


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    OT54variant OT122A OT143B OT143R OT172A1 OT172A2 OT223 OT323 OT343N OT343R RF Wideband Transistors PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BGA2001 Silicon MMIC amplifier Objective specification File under Discrete Semiconductors, SC14 1998 Jan 12 Philips Semiconductors Objective specification Silicon MMIC amplifier BGA2001 FEATURES PINNING SOT343R • Low current, low voltage


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    BGA2001 SCA57 127127/00/01/pp8 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BGA2003 Silicon MMIC amplifier Objective specification File under Discrete Semiconductors, SC14 1998 Jan 13 Philips Semiconductors Objective specification Silicon MMIC amplifier BGA2003 FEATURES PINNING SOT343R • Low current PIN DESCRIPTION


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    BGA2003 OT343R BGA2003 SCA57 127127/00/01/pp8 PDF

    transistor K 2333

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS M3D124 BGA2001 silicon MMIC amplifier Preliminary specification 1999 Jan 04 Philips Semiconductors Preliminary specification silicon MMIC amplifier BGA2001 PINNING SOT343R FEATURES • Low current, low voltage PIN DESCRIPTION • Very high power gain


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    M3D124 BGA2001 SCA60 budgetnum/printrun/ed/pp11 transistor K 2333 PDF

    MBC13916NT1

    Abstract: sot343r MBC13916 Isolation amplifier and application
    Text: SOT343R MBC13916 High reverse isolation in a cascode LNA Overview 0.9 dB at the device level, and a noise figure Freescale Semiconductor's MBC13916 is a NF of 1.25 dB in a typical circuit at 900 MHz. cost-effective, high isolation cascode amplifier At 1.9 GHz, the NFmin is 1.9 dB, and the NF


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    OT343R MBC13916 MBC13916 OT-343R MBC13916FACT MBC13916NT1 sot343r Isolation amplifier and application PDF

    Untitled

    Abstract: No abstract text available
    Text: Package outline Plastic surface-mounted package; reverse pinning; 4 leads D SOT343R E B A X HE y v M A e 3 4 Q A A1 2 w M B c 1 bp Lp b1 e1 detail X 1 2 mm scale DIMENSIONS mm are the original dimensions UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1


    Original
    OT343R PDF

    chip die npn transistor

    Abstract: BFG310W/XR
    Text: CM PA K-4 BFG310W/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features and benefits


    Original
    BFG310W/XR OT343R BFG310W chip die npn transistor BFG310W/XR PDF

    A7 NPN EPITAXIAL

    Abstract: Philips FA 145 BFG310W/XR BFG310W
    Text: BFG310W/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features • ■ ■ ■ High power gain


    Original
    BFG310W/XR OT343R A7 NPN EPITAXIAL Philips FA 145 BFG310W/XR BFG310W PDF

    SOT343R footprint

    Abstract: No abstract text available
    Text: Reflow soldering footprint Footprint information for reflow soldering SOT343R 2.7 1.85 0.675 0.6 0.5 3x (3x) (3x) solder lands 2 3 solder resist 0.65 1.3 2.5 0.55 1 solder paste 4 occupied area 0.7 0.8 0.875 Dimensions in mm 0.625 (4x) sot343r_fr 0.55 (4x)


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    OT343R sot343r SOT343R footprint PDF

    SOT343R

    Abstract: Bp SOT343R
    Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline Plastic surface mounted package; reverse pinning; 4 leads D SOT343R E B A X HE y v M A e 3 4 Q A A1 c 2 w M B 1 bp Lp b1 e1 detail X 1 2 mm scale DIMENSIONS mm are the original dimensions UNIT A A1


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    OT343R SOT343R Bp SOT343R PDF

    DRO lnb

    Abstract: BFG424W
    Text: BFG424W NPN 25 GHz wideband transistor Rev. 01 — 21 March 2006 Product data sheet 1. Product profile 1.1 General description NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.


    Original
    BFG424W OT343R MSC895 BFG424W DRO lnb PDF

    Untitled

    Abstract: No abstract text available
    Text: CM PA K -4 BFG310W/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features and benefits


    Original
    BFG310W/XR OT343R BFG310W PDF

    Untitled

    Abstract: No abstract text available
    Text: CM PA K -4 BFG325W/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features and benefits


    Original
    BFG325W/XR OT343R BFG325W PDF

    SOT343R

    Abstract: 12238
    Text: SOT343R Vishay Semiconductors SOT343R Package Dimensions in mm Inches 96 12238 Document Number 84032 Rev. 1.2, 12-Jan-07 www.vishay.com 1 SOT343R Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to


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    OT343R 12-Jan-07 D-74025 SOT343R 12238 PDF

    Untitled

    Abstract: No abstract text available
    Text: CM PA K -4 SOT343R CMPAK-4; Tape reel SMD; standard product orientation 12NC ending 115 Rev. 1 — 13 November 2012 Packing information 1. Packing method Printed plano box Barcode label Reel Tape Barcode label Circular sprocket holes opposite the label side of reel


    Original
    OT343R msc074 OT343R PDF

    marking code AN mmic

    Abstract: BGA2002 RF TRANSISTOR 2.5 GHZ s parameter MMIC code D mmic marking A 4 pin dual-emitter amplifier marking 4 marking code 02 mmic mmic marking D M3D124
    Text: DISCRETE SEMICONDUCTORS M3D124 BGA2002 silicon MMIC amplifier Objective specification File under Discrete Semiconductors, SC14 1998 Sep 01 Philips Semiconductors Objective specification silicon MMIC amplifier BGA2002 PINNING SOT343R FEATURES • Low current, low voltage


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    M3D124 BGA2002 OT343R marking code AN mmic BGA2002 RF TRANSISTOR 2.5 GHZ s parameter MMIC code D mmic marking A 4 pin dual-emitter amplifier marking 4 marking code 02 mmic mmic marking D M3D124 PDF

    transistor marking codes list

    Abstract: BFG325W
    Text: BFG325W/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features • ■ ■ ■ High power gain


    Original
    BFG325W/XR OT343R transistor marking codes list BFG325W PDF

    RF Wideband Transistors

    Abstract: MS-012AA
    Text: PACKAGE OUTLINES Package SOT23 SOT54 SOT89 SOT96-1 SOT122A SOT122D SOT122E SOT143B SOT143R SOT172A1 SOT172A2 SOT223 SOT323 SOT343N SOT343R SOT353 SOT363 SOT551A Surface-mount yes no yes yes no no no yes yes no no yes yes yes yes yes yes yes Page . .


    Original
    OT96-1 OT122A OT122D OT122E OT143B OT143R OT172A1 OT172A2 OT223 OT323 RF Wideband Transistors MS-012AA PDF

    Untitled

    Abstract: No abstract text available
    Text: CM PA K-4 BFG325W/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features and benefits


    Original
    BFG325W/XR OT343R BFG325W PDF

    SOT343R

    Abstract: Bp SOT343R
    Text: Package outline Philips Semiconductors Plastic surface-mounted package; reverse pinning; 4 leads D SOT343R E B A X HE y v M A e 3 4 Q A A1 c 2 w M B 1 bp Lp b1 e1 detail X 1 2 mm scale DIMENSIONS mm are the original dimensions UNIT A A1 max bp b1 c D E e


    Original
    OT343R SOT343R Bp SOT343R PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BGA2001 silicon MMIC amplifier Preliminary specification Supersedes data of 1999 Jan 01 Philips Sem iconductors 1999 Feb 25 PHILIPS Philips Semiconductors Preliminary specification silicon MMIC amplifier BGA2001 FEATURES PINNING SOT343R


    OCR Scan
    BGA2001 BGA2001 OT343R 125006/3100/04/pp12 PDF