Untitled
Abstract: No abstract text available
Text: STT4P3LLH6 P-Channel 30 V, 0.04 Ω typ., 4 A STripFET VI DeepGATE™ Power MOSFET in SOT23-6L package Datasheet - preliminary data Features 4 5 6 3 Order code VDS RDS on max ID STT4P3LLH6 30 V 0.06 Ω at 10 V 4A • RDS(on) * Qg industry benchmark 2 1
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OT23-6L
OT23-6L
DocID024615
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DMG1012
Abstract: ZVN4206GV ZXMS6004FFTA zxmhc3f381n8 DMP2066 DMN2075 DMN2041 ZVN4306G dmp2035 ZXMHC3A01N8
Text: DIO 1931 MOSFET brochure Final Artwork extra amends 13/1/10 11:51 Page 1 MOSFETs www.diodes.com DIO 1931 MOSFET brochure (Final Artwork extra amends) 13/1/10 11:51 Page 2 DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS
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A1103-04,
DMG1012
ZVN4206GV
ZXMS6004FFTA
zxmhc3f381n8
DMP2066
DMN2075
DMN2041
ZVN4306G
dmp2035
ZXMHC3A01N8
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complementary MOSFET TO252
Abstract: zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4
Text: MOSFETs diodes.com DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS COMPANY OVERVIEW DIODES MEANS MOSFET BUSINESS Diodes Incorporated is a leading global provider of Discrete and
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D-81541
A1103-04,
complementary MOSFET TO252
zxmc10a816n
DMG2307L
DMC2700UDM
DMP21D5UFB4
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GS 069
Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no
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Si9165
Si9169
600-mA
TSSOP-20
MSOP-10
SiP1759
GS 069
Si5902DC SPICE Device Model
tsop6 marking 312
sC89-6
Si7705DN
SI7100DN
Si3865BDV
Si5947DU
Si3861BDV
1212-8
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FDV305N
Abstract: NDS351AN NDS331N FDN327N supersot-3 FDV301N MOSFET SOT-23 FDV302P MMBF170 rohs FDN335N
Text: Discrete MOSFET SOT-23 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) SOT-23/SuperSOT-3 N-Channel FDN339AN 20 Single - 0.035 0.05 - 7 3 0.5 FDN371N 20 Single - 0.05 0.06
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OT-23
OT-23/SuperSOT-3
FDN339AN
FDN371N
FDN327N
FDN335N
NDS335N
NDS331N
FDV305N
FDN340P
FDV305N
NDS351AN
NDS331N
FDN327N
supersot-3
FDV301N
MOSFET SOT-23
FDV302P
MMBF170 rohs
FDN335N
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stu407d
Abstract: STU432S STU419S stm8309 STU432 STM6930A STM6922 STU426S STU3525NL stu309dh
Text: Selection Guide - Mosfet Product N Channel Product Rds on / m Ohm max Package Configuration Vds Vgs (±) ID PD (W) STF8220 DFN Dual-N 20 12 7.0 2 STA6610 PDIP-8 Dual-N 30 20 7.6 3 23.0 STA6620 PDIP-8 Dual-N 40 20 7.0 3 25.0 STA6968 PDIP-8 Dual-N 60 20 5.3
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STF8220
STA6610
STA6620
STA6968
STM9926
STM4884A
STM4410A
SDM4410
STM480-40
stu407d
STU432S
STU419S
stm8309
STU432
STM6930A
STM6922
STU426S
STU3525NL
stu309dh
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VN10KLS
Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated
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Si4831DY
Si4833DY
Si4852DY
Si4816DY
10Single
VN50300L
VN50300T
OT-23
VN66AFD
VN10KLS
mosfet bs250
Si4730
SUP85N03-04P
VN66AFD
Si4835DY
si5504
SI3459DV
sup65p06
sub75p05
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P-Channel TrenchFET Power MOSFET SOT-23
Abstract: TP0101T equivalent P-CHANNEL POWER MOSFET SO-8 TN0201T DUAL P- MOSFET SO-8
Text: Siliconix Vishay MOSFETs and Standard Products Visit Vishay’s Website at www.vishay.com LITTLE FOOT Power MOSFETs P-Channel MOSFETs ® LITTLE FOOT power MOSFETs are being designed into computer and computer peripheral products, telecom systems, automotive air bags, and numerous other
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Si4467DY
Si6465DQ
Si4463DY
Si6969DQ
Si9434DY
Si9433DY
Si4425DY
Si4435DY-RevA
Si9430DY
Si9435DY
P-Channel TrenchFET Power MOSFET SOT-23
TP0101T equivalent
P-CHANNEL POWER MOSFET SO-8
TN0201T
DUAL P- MOSFET SO-8
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DPAK/TO-252
Abstract: No abstract text available
Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power Mosfets SMM Medical Devices MOSFETs - Enhanced Quality Control Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the
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Ups-2726
VMN-PL0469-1311
DPAK/TO-252
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0858T
Abstract: VP0610T siliconix catalog dual j-fet MMBFJ176
Text: Siliconix Vishay MOSFETs and Standard Products Visit VishayÕs Website at www.vishay.com LITTLE FOOT¨ Power MOSFETs P-Channel MOSFETs LITTLE FOOT ¨ power MOSFETs are being designed into computer and computer peripheral products, telecom systems, automotive air bags, and numerous other
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Si4467DY
TN0200T
TP0101T
TN0200TS
TP0610T
TN0201T
VP0610T
VN0605T
2N7002
TN2460T
0858T
VP0610T
siliconix catalog dual j-fet
MMBFJ176
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SDU3055L2
Abstract: STU9916L SDM8401 STM820 stu6025nl STU3525NL 635-75 STU2040PL SDP55N03L STM9435
Text: Selection Guide - Mosfet Product update:2005/03/3 Part No. SDM4410 STM4410A SDM4800 STM4800A SDM40N02 SDM4884 STM4884A STM7821 STM7822 STM7822A STM9410 STM9410A STM9433 STM9435 SDM9435A STM4431 STM4433 STM4433A SDM4435 STM4437 STM4437A STM4439 STM4439A STM6375
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SDM4410
STM4410A
SDM4800
STM4800A
SDM40N02
SDM4884
STM4884A
STM7821
STM7822
STM7822A
SDU3055L2
STU9916L
SDM8401
STM820
stu6025nl
STU3525NL
635-75
STU2040PL
SDP55N03L
STM9435
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AO4946
Abstract: AOZ1242 AO4407A AOZ1242AI AO7408 AO3460 AO4936 AOZ1212AI AOD484 ao4466
Text: ALPHA & OMEGA SEMICONDUCTOR Selector Guide Q2/Q3 2008 www.aosmd.com Technology. Innovation. Powering the Future. TABLE OF CONTENTS Corporate Overview Mosfets Power ICs Transient Voltage Suppressors TVS Package Types www.aosmd.com PAGE 2 PAGE 3 - 18 PAGE 19 - 22
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sq4435
Abstract: SQP120N10-09
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs SMM Medical Devices Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the implantable medical market.
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VMN-PL0469-1505
sq4435
SQP120N10-09
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SQ2315ES
Abstract: SQ2319ES SQM120P04-04L SQ2360EES SQ3456EV SQJ848EP SQ2301ES sQj980ep sq9945bey sqm10
Text: V i s h ay I n t e r t e c h n o l o g y, I n c . power mosfets Automotive A pplic ations m o sf e t s w w w. v i s h a y. c o m Selector Guide Powe r MOSFETs for Automotive A pplic ations POWER MOSFETs Vishay Siliconix Dedicated Automotive Process Flow Reduces Defects
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AEC-Q101
O-262,
O-263)
VMN-SG2151-1009
SQ2315ES
SQ2319ES
SQM120P04-04L
SQ2360EES
SQ3456EV
SQJ848EP
SQ2301ES
sQj980ep
sq9945bey
sqm10
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WTC2302
Abstract: WTC2304
Text: WTC2304 N-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT 2.7 AMPERS P b Lead Pb -Free DRAIN SOUCE VOLTAGE 25 VOLTAGE 1 GATE Features: 2 SOURCE 3 *Super High Dense Cell Design For Low RDS(ON) RDS(ON)<117mΩ @VGS=10V *Rugged and Reliable 1 2 SOT-23
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WTC2304
OT-23
OT-23
09-May-05
WTC2302
WTC2302
WTC2304
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WTC2302
Abstract: No abstract text available
Text: WTC2302 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3.2 AMPERS 3 DRAIN DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low RDS ON RDS(ON)<90mΩ@VGS=4.5V *Rugged and Reliable *Capable of 2.5V Gate Drive
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WTC2302
OT-23
OT-23
09-May-05
WTC2302
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WTC2302
Abstract: 2302 SOT-23 SOT-23 Marking 2302
Text: WTC2302 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3.2 AMPERS 3 DRAIN * “G” Lead Pb -Free DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low RDS(ON) RDS(ON)<90mΩ@VGS=4.5V *Rugged and Reliable *Capable of 2.5V Gate Drive
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WTC2302
OT-23
OT-23
09-May-05
WTC2302
2302 SOT-23
SOT-23 Marking 2302
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Untitled
Abstract: No abstract text available
Text: WTC2302 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3.2 AMPERS 3 DRAIN DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low RDS ON RDS(ON)<90mΩ@VGS=4.5V *Rugged and Reliable *Capable of 2.5V Gate Drive
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WTC2302
OT-23
OT-23
09-May-05
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Untitled
Abstract: No abstract text available
Text: WTC1333 Surface Mount P-Channel Enhancement Mode MOSFET DRAIN CURRENT 3 DRAIN -550m AMPERES DRAIN SOURCE VOLTAGE -20 VOLTAGE 1 GATE Features: 2 *Super High Dense Cell Design For Low RDS ON R DS(ON) <600mΩ@V GS =-10V *Simple Gate Drive *Small package Outline
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WTC1333
-550m
OT-23
OT-23
17-Jun-05
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JESD22-A108C
Abstract: JESD22-A108-C JESD22A-101-B
Text: Formosa MS N-Channel MOSFET ESD Protection 2N7002K List List. 1 Package outline. 2
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2N7002K
1000hours
JESD22-A108-C
JESD22-B102-D
168hours
JESD22-A102-C
10min
10min
JESD22-A104-B
JESD22-A108C
JESD22-A108-C
JESD22A-101-B
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Untitled
Abstract: No abstract text available
Text: Formosa MS ESD N-Channel SMD MOSFET 2N7002K List List. 1 Package outline. 2 Features. 2
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2N7002K
METHOD-1027
500hrs.
MIL-STD-750D
METHOD-1051
METHOD-1056
1000hrs.
METHOD-1038
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JESD22-A108C
Abstract: 2N7002K
Text: Formosa MS N-Channel SMD MOSFET ESD Protection 2N7002K List List. 1 Package outline. 2
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2N7002K
1000hours
JESD22-A108-C
JESD22-B102-D
168hours
JESD22-A102-C
JESD22-A104-B
10min
/10min
JESD22-A108C
2N7002K
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8SS138
Abstract: GFP80N03 SFB50N03 BS170 bss138 2N7002 60V SOT-23 Fet irfz44n
Text: MOSFETS - N CHANNEL BY VOLTAGE 20V Drain-Source Rated Trench G e n F e t Qg [nC l, Typ. Ros(on) [m n l Id Vgs = 2.5V Vgs = 4.5V [V] [A] Max Max V d s = 10V Vgs Vgs 4.5V 10V Config Package Page Dual SOT-363 - TN0205AD*'1 20 0.25 2500 2000 0.35 TN0200T
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TN0205AD*
TN0200T
OT-363
OT-23
BSH105
GF6968A
GF6968E
GF9926
GF4126
8SS138
GFP80N03
SFB50N03
BS170 bss138
2N7002 60V SOT-23
Fet irfz44n
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ZVN4210A
Abstract: zvn4310a zxmn10a07f
Text: 80- 100 Volt MOSFETs A series o f m id -vo ltage M O SFETs containing sm all signal products fo r lo w current sw itching applications and trench M O SFETs. The trench M O SFETs enable m uch h igher current handling capability in the packages on offer. Typical applications include:-
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ZXMP10A22G
ZXMP10A08G
ZXMP10A11G
ZVP2110G
ZVP2110A
ZVP3310A
ZVP3310F
OT223
ZVN4210A
zvn4310a
zxmn10a07f
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