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    TN0200T Price and Stock

    Vishay Siliconix TN0200TS

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    Bristol Electronics TN0200TS 100
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    Vishay Siliconix TN0200T-T1

    730 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
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    Quest Components TN0200T-T1 7,053
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    TN0200T-T1 2,136
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    TN0200T-T1 493
    • 1 $1.5
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    Vishay Siliconix TN0200T

    POWER FIELD-EFFECT TRANSISTOR, 0.6A I(D), 1-ELEMENT, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components TN0200T 493
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    Others TN0200T

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    Chip 1 Exchange TN0200T 123,144
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    Others TN0200T-T1

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    TN0200T Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TN0200T Siliconix N-Channel Enhancement-Mode MOSFET Original PDF
    TN0200T Vishay Siliconix Specification Comparison TN0200K vs. TN0200T Original PDF
    TN0200T Vishay Siliconix N-Channel 20-V (D-S) MOSFETs Original PDF
    TN0200T Vishay Telefunken N-Channel 20-V (D-S) MOSFET Original PDF
    TN0200T Siliconix Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, n_Channel, 20V, 0.4M, 4I, Pkg Style SOT-23 Scan PDF
    TN0200T-E3 Vishay Transistor Mosfet N-CH 20V 0.73A 3TO-236 Original PDF
    TN0200TS Vishay Intertechnology N-Channel 20-V (D-S) MOSFET Original PDF
    TN0200TS Vishay Siliconix N-Channel 20-V (D-S) MOSFETs Original PDF
    TN0200TS Siliconix Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, MOSFET, N-Channel, Low Power, 20V, .4M, 9A Scan PDF
    TN0200TS-T1 Vishay Transistor Mosfet N-CH 20V 1.2A 3TO-236 REEL Original PDF
    TN0200T-T1 Vishay Transistor Mosfet N-CH 20V 0.73A 3TO-236 REEL Original PDF

    TN0200T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TN0200T

    Abstract: TN0200TS
    Text: TN0200T/TS Vishay Siliconix N-Channel 20-V D-S MOSFETs PRODUCT SUMMARY ID (A) rDS(on) (W) TN0200T TN0200TS 0.4 @ VGS = 4.5 V 0.73 1.2 0.5 @ VGS = 2.5 V 0.65 1.1 VDS (V) 20 FEATURES D D D D D BENEFITS Low On-Resistance: 0.29 W Low Threshold: 0.9 V (typ) 2.5-V or Lower Operation


    Original     		PDF TN0200T/TS TN0200T TN0200TS S-40277--Rev. 23-Feb-04 TN0200T TN0200TS

    MOSFET n0 sot-23

    Abstract: TN0200T
    Text: TN0200T N-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) 20 ID (A) 0.4 @ VGS = 4.5 V 0.6 0.5 @ VGS = 2.5 V 0.5 TO-236 (SOT-23) G 1 D 3 S 2 Top View TN0200T (N0)* *Marking Code for TO-236 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF TN0200T O-236 OT-23) S-44204--Rev. 31-Mar-95 MOSFET n0 sot-23 TN0200T

    TN0200T

    Abstract: TN0200TS
    Text: TN0200T/TS N-Channel Enhancement-Mode MOSFET TO-236 SOT-23 Product Summary ID (A) rDS(on) (W) TN0200T 0.4 @ VGS = 4.5 V 0.73 1.2 0.5 @ VGS = 2.5 V 0.65 1.1 VDS (V) 20 Top View TN0200TS G 1 3 S TN0200T (N0)* TN0200TS (NS)* *Marking Code for TO-236 D 2 Features


    Original     		PDF TN0200T/TS O-236 OT-23) TN0200T TN0200TS S-52426--Rev. 14-Apr-97 TN0200T TN0200TS

    TN0200T

    Abstract: TN0200TS
    Text: TN0200T/TS Vishay Siliconix N-Channel 20-V D-S MOSFETs PRODUCT SUMMARY ID (A) rDS(on) (W) TN0200T TN0200TS 0.4 @ VGS = 4.5 V 0.73 1.2 0.5 @ VGS = 2.5 V 0.65 1.1 VDS (V) 20 FEATURES D D D D D BENEFITS Low On-Resistance: 0.29 W Low Threshold: 0.9 V (typ) 2.5-V or Lower Operation


    Original     		PDF TN0200T/TS TN0200T TN0200TS 18-Jul-08 TN0200T TN0200TS

    TN0200T

    Abstract: TN0200TS
    Text: TN0200T/TS Vishay Siliconix N-Channel 20-V D-S MOSFETs PRODUCT SUMMARY ID (A) rDS(on) (W) TN0200T TN0200TS 0.4 @ VGS = 4.5 V 0.73 1.2 0.5 @ VGS = 2.5 V 0.65 1.1 VDS (V) 20 FEATURES D D D D D BENEFITS Low On-Resistance: 0.29 W Low Threshold: 0.9 V (typ) 2.5-V or Lower Operation


    Original     		PDF TN0200T/TS TN0200T TN0200TS 08-Apr-05 TN0200T TN0200TS

    TN0200T

    Abstract: No abstract text available
    Text: TN0200T Siliconix NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.4 @ VGS = 4.5 V 0.6 0.5 @ VGS = 2.5 V 0.5 TOĆ236 (SOTĆ23) G 1 3 S D 2 Top View TN0200T (N0)* *Marking Code for TOĆ236 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF TN0200T S44204Rev. TN0200T

    TN0200T

    Abstract: TN0200K TN0200K-T1 TN0200T-T1 TN0200K-T1-E3
    Text: Specification Comparison Vishay Siliconix TN0200K vs. TN0200T Description: N-Channel MOSFET Package: SOT-23 Pin Out: Identical Part Number Replacements: TN0200K-T1 Replaces TN0200T-T1 TN0200K-T1—E3 Lead Free version Replaces TN0200T-T1 Summary of Performance:


    Original     		PDF TN0200K TN0200T OT-23 TN0200K-T1 TN0200T-T1 TN0200K-T1--E3 TN0200T. TN0200K TN0200T TN0200T-T1 TN0200K-T1-E3

    TN0200T

    Abstract: MOSFET n0 sot-23 TN0200TS
    Text: TN0200T/TS N-Channel Enhancement-Mode MOSFET TO-236 SOT-23 Product Summary ID (A) rDS(on) (W) W TN0200T 0.4 @ VGS = 4.5 V 0.73 1.2 0.5 @ VGS = 2.5 V 0.65 1.1 VDS (V) 20 Top View TN0200TS G 1 3 S TN0200T (N0)* TN0200TS (NS)* *Marking Code for TO-236 D 2 Features


    Original     		PDF TN0200T/TS O-236 OT-23) TN0200T TN0200TS S-52426--Rev. 14-Apr-97 TN0200T MOSFET n0 sot-23 TN0200TS

    MOSFET n0 sot-23

    Abstract: TN0200T
    Text: TN0200T N-Channel Enhancement-Mode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.4 @ VGS = 4.5 V 0.6 0.5 @ VGS = 2.5 V 0.5 TO-236 (SOT-23) G 1 D 3 S 2 Top View TN0200T (N0)* *Marking Code for TO-236 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF TN0200T O-236 OT-23) S-44204--Rev. 31-Mar-95 MOSFET n0 sot-23 TN0200T

    40198

    Abstract: TN0200T
    Text: TN0200T/TS Vishay Siliconix N-Channel 20-V D-S MOSFETs PRODUCT SUMMARY ID (A) rDS(on) (W) TN0200T TN0200TS 0.4 @ VGS = 4.5 V 0.73 1.2 0.5 @ VGS = 2.5 V 0.65 1.1 VDS (V) 20 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D Low On-Resistance: 0.29 W


    Original     		PDF TN0200T/TS TN0200T TN0200TS O-236 OT-23) S-40198--Rev. 09-Feb-04 40198 TN0200T

    TN0200T

    Abstract: TN0200TS
    Text: TN0200T/TS Vishay Siliconix N-Channel 20-V D-S MOSFETs PRODUCT SUMMARY ID (A) rDS(on) (W) TN0200T TN0200TS 0.4 @ VGS = 4.5 V 0.73 1.2 0.5 @ VGS = 2.5 V 0.65 1.1 VDS (V) 20 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D Low On-Resistance: 0.29 W


    Original     		PDF TN0200T/TS TN0200T TN0200TS S-03184--Rev. 17-Feb-03 TN0200T TN0200TS

    tn0200k-t1-e3

    Abstract: TN0200T-T1 TN0200T TN0200KT1 TN0200K S 357 TN0200K-T1 TF3045
    Text: Specification Comparison Vishay Siliconix TN0200K vs. TN0200T Description: N-Channel MOSFET Package: SOT-23 Pin Out: Identical Part Number Replacements: TN0200K-T1 Replaces TN0200T-T1 TN0200K-T1-E3 Lead (Pb -free version) Replaces TN0200T-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF TN0200K TN0200T OT-23 TN0200K-T1 TN0200T-T1 TN0200K-T1-E3 TN0200K 09-Nov-06 tn0200k-t1-e3 TN0200T-T1 TN0200T TN0200KT1 S 357 TF3045

    TN0200T

    Abstract: TN0200TS
    Text: TN0200T/TS Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY ID (A) rDS(on) (W) TN0200T TN0200TS 0.4 @ VGS = 4.5 V 0.73 1.2 0.5 @ VGS = 2.5 V 0.65 1.1 VDS (V) 20 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D Low On-Resistance: 0.29 W


    Original     		PDF TN0200T/TS TN0200T TN0200TS S-04279--Rev. 16-Jul-01 TN0200T TN0200TS

    bq2903

    Abstract: schematic diagram 12V battery charger regulator TIP42 Application Note rayovac aaa rechargeable diode 1N4001 specifications rechargeable battery DOD alkaline battery charger 2N4403 diagram Rayovac aa nimh
    Text: U-512 Using the bq2902/3 Rechargeable Alkaline ICs As a result, alkaline cells provide lower effective capacity at higher discharge currents. Introduction The bq2902 and bq2903 ICs manage rechargeable alkalines such as the Renewal cells from Rayovac®. These


    Original     		PDF U-512 bq2902/3 bq2902 bq2903 bq2902 schematic diagram 12V battery charger regulator TIP42 Application Note rayovac aaa rechargeable diode 1N4001 specifications rechargeable battery DOD alkaline battery charger 2N4403 diagram Rayovac aa nimh

    phono preamp ceramic

    Abstract: WM8737L mic preamp WM8737-EV1B EV1B phono preamp WM8737 1x2 pin header 2.54mm pitch PHONO Preamp to USB WM8737L-EV1B
    Text: WM8737-EV1B Evaluation Board User Handbook Rev 1.5 WM8737-EV1M TABLE OF CONTENTS TABLE OF CONTENTS . 2 INTRODUCTION . 3


    Original     		PDF WM8737-EV1B WM8737-EV1M phono preamp ceramic WM8737L mic preamp WM8737-EV1B EV1B phono preamp WM8737 1x2 pin header 2.54mm pitch PHONO Preamp to USB WM8737L-EV1B

    TRANSISTOR WM 9

    Abstract: WM8200-EV1B manual install dox 10 on xp WM8200 Potentiometer SMD C50-52 transistor SMD J9 LNK11 THS5671A 10K potentiometer pcb mountable
    Text: WM8200 WM8200 Evaluation Board User Handbook July 2002, Rev 1.1 INTRODUCTION The WM8200 is a 40MSPS ADC with PGA. This evaluation platform and documentation should be used in conjunction with the latest version of the WM8200 datasheet. The datasheet gives device functionality information as well as timing and


    Original     		PDF WM8200 WM8200 40MSPS WM8200-EV1B WM8200-EV1S WM8200-EV1M TRANSISTOR WM 9 manual install dox 10 on xp Potentiometer SMD C50-52 transistor SMD J9 LNK11 THS5671A 10K potentiometer pcb mountable

    WM8768-EV1M

    Abstract: WM8768 1x2 pin header 2.54mm pitch J28-J33 CS8427 WM8766 WM8796 1x14-pin 1J26
    Text: w WM8768-EV1M WM8768 Evaluation Board User Handbook INTRODUCTION The WM8768 is a 24-bit, 192kHz 8-Channel DAC. This evaluation platform and documentation should be used in conjunction with the latest version of the WM8768 datasheet. The datasheet gives device functionality information as well as timing and


    Original     		PDF WM8768-EV1M WM8768 24-bit, 192kHz WM8768. WM8768-EV1B WM8768-EV1S WM8768-EV1M 1x2 pin header 2.54mm pitch J28-J33 CS8427 WM8766 WM8796 1x14-pin 1J26

    WM8978-EV1M

    Abstract: smd diode H5 WM8978 schematic diagram phono to usb c828* npn HC49US REGULATOR 1R50 schematic diagram usb to phono "USB Streaming Controller" smd transistor h7
    Text: WM8978-EV1M Evaluation Board User Handbook Rev 1.3 WM8978-EV1M TABLE OF CONTENTS TABLE OF CONTENTS . 2 INTRODUCTION . 3


    Original     		PDF WM8978-EV1M WM8978-EV1M smd diode H5 WM8978 schematic diagram phono to usb c828* npn HC49US REGULATOR 1R50 schematic diagram usb to phono "USB Streaming Controller" smd transistor h7

    WM8152

    Abstract: WM8152-EV1M PGAR WM81XX 74VHC541 74VHC541M SN74HC14 PC Printer Port socket 00rw0
    Text: WM8152-EV1M Evaluation Board User Handbook Rev 1.2 WM8152-EV1M TABLE OF CONTENTS TABLE OF INTRODUCTION .3


    Original     		PDF WM8152-EV1M WM8152 WM8152-EV1M PGAR WM81XX 74VHC541 74VHC541M SN74HC14 PC Printer Port socket 00rw0

    HC49 smd 12Mhz

    Abstract: 74ALVC164245 CS8427 WM8711L J30-31 volume control 3.5mm pcb mount stereo jack socket wolfson usb dac
    Text: WM8711-EV2M Evaluation Board User Handbook Rev 1.1 WM8711-EV2M TABLE OF CONTENTS TABLE OF CONTENTS . 2 INTRODUCTION . 3


    Original     		PDF WM8711-EV2M HC49 smd 12Mhz 74ALVC164245 CS8427 WM8711L J30-31 volume control 3.5mm pcb mount stereo jack socket wolfson usb dac

    TN0200T

    Abstract: No abstract text available
    Text: Tem ic TN0200T/TS Semiconductors N-Channel Enhancement-Mode MOSFET Product Summary I d A r DS(on) (Q ) TN0200T TN0200TS 0.4 @ VGs = 4.5 V 0.73 1.2 0.5 @ Vos = 2.5 V 0.65 1.1 V d s (V ) 20 Features Benefits • • • • • • • • • • Low On-Resistance: 0.29 Q


    OCR Scan     		PDF TN0200T/TS TN0200T TN0200TS O-236 S-52426--Rev. 14-Apr-97 TN0200T

    TN0200T

    Abstract: No abstract text available
    Text: TN0200T/TS Vishay Siliconix N-Channel 20-V D-S MOSFETs PRODUCT SUMMARY Id (A) V d s (V) 20 TN0200T rDS(on) ( iJ) TN0200TS 0.4 @ V q S = 4.5 V 0.73 1.2 0.5 V GS = 2.5 V 0.65 1.1 FEATURES BENEFITS APPLICATIONS • • • • • • • • • • •


    OCR Scan     		PDF TN0200T/TS TN0200T TN0200TS O-236 OT-23) S-04279--Rev. 16-Jul-01 S-04279-- TN0200T

    sot-23 MARKING CODE GS 5

    Abstract: n-Channel 12-V D-S MOSFET sot-23
    Text: C£ L >G e n e r a l \J S e m i c o n d u c t o r _ TN0200T N-Channel Enhancement-Mode MOSFET % V d s 20V R ds ON 0.40Q I d 0.73A TO-236AB (SOT-23) 0.031 (0.8) Hh Top View - - f jl- 0.035 (0.9) Pin Configuration 0.079 (2.0) 1. Gate 2. Source


    OCR Scan     		PDF TN0200T O-236AB OT-23) OT-23 OT-23, S0T-23-6L sot-23 MARKING CODE GS 5 n-Channel 12-V D-S MOSFET sot-23

    8SS138

    Abstract: GFP80N03 SFB50N03 BS170 bss138 2N7002 60V SOT-23 Fet irfz44n
    Text: MOSFETS - N CHANNEL BY VOLTAGE 20V Drain-Source Rated Trench G e n F e t Qg [nC l, Typ. Ros(on) [m n l Id Vgs = 2.5V Vgs = 4.5V [V] [A] Max Max V d s = 10V Vgs Vgs 4.5V 10V Config Package Page Dual SOT-363 - TN0205AD*'1 20 0.25 2500 2000 0.35 TN0200T


    OCR Scan     		PDF TN0205AD* TN0200T OT-363 OT-23 BSH105 GF6968A GF6968E GF9926 GF4126 8SS138 GFP80N03 SFB50N03 BS170 bss138 2N7002 60V SOT-23 Fet irfz44n