SOT23-6 MARKING CODE 52 Search Results

SOT89 transistor marking

Abstract: SOT89 MARKING CODE PNP TRANSISTOR "SOT89" marking code NA sot23 Transistor 5C5 "PNP Transistor" PNP TRANSISTOR SOT89 PNP Epitaxial Silicon Transistor sot223 sot89 "NPN TRANSISTOR" NPN transistor collector base and emitter
Contextual Info: PRODUCT announcement New Tiny Packages High Voltage Small Signal Transistors SOT-563 SOT-523 Dual Single SOT-23 SOT-89 SOT-223 SOT-228 Single Single Single Dual features • VCEO = 160V NPN , 150V (PNP) • IC = 600mA (NPN), 500mA (PNP) • Ideal for high voltage amplifier applications

top marking 3c sot23

Abstract: smd code marking sot23 sot-23 pinout diode smd marking code 631 diode SOD-323 Dual Diodes In SOT Package smd transistor marking PA smd diode marking sot-23 sot-23 marking PA marking CODE R SMD DIODE
Contextual Info: PRODUCT announcement Low Leakage Diodes in SOT-23, SOD-323, SOD-523 and SOT-563 packages SOT-23 SOD-323 SOD-523 SOT-563 features • Low Leakage: 1.0nA max. • VRRM: 200 Volts • Available in four space saving SMD packages Sample devices are available description

LL-34 zener diode

Abstract: LL-41 diode marking
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UMMSZ52XXB ZENER DIODE SURFACE MOUNT SILICON ZENER DIODE 3 1 2  1 1 2 2 SOD-323 SOD-523 FEATURES 2 1 LL-34 SYMBOL SOD-123 / SOD-323 SOD-523 / LL34 SOT-23  SOD-123 JEDEC TO-236 * Low reverse leakage current  2 SOT-23

Contextual Info: DMG3402L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features V BR DSS RDS(ON) 30V 52mΩ @ VGS = 10V 65mΩ @ VGS = 4.5V 85mΩ @ VGS = 2.5V • • • • • • • • ID TA = +25°C 4A 3A 2A Low On-Resistance: Low Gate Threshold Voltage

c639

Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05

transistor C639

Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W

Contextual Info: TSM2305 20V P-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain -20 ID (A) 52 @ VGS =-4.5V -3.2 71 @ VGS =-2.5V -2.7 108 @ VGS =-1.8V -2.0 Block Diagram Features ● Advance Trench Process Technology ●

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

BC 945

Abstract: BC847F-BC850F BC847 SOT23 BF850 marking code marking CODE 1BS 1bs sot323 BC849CW G t marking SOT323 marking 1F SOT323
Contextual Info: BC846.-BC850. NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856.-BC860. PNP 1 2006-09-19

1B marking

Contextual Info: BC846.-BC850. NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856.-BC860. PNP • Pb-free (RoHS compliant) package1)

MARKING 3FS

Abstract: marking 3bs BC846 Infineon BC857 3fs BC857BL3 BC860BW BC856A BC856B BC856BW BC857A
Contextual Info: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package1)

top marking 1B sot23

Abstract: marking 3bs 3bs marking code BC856-BC860 3BS MARKING MARKING 3gs marking 3Ls SOT23 3ks 3Fs marking transistor 3Fs sot23
Contextual Info: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)

A14 marking SOT

Contextual Info: AME µProcessor Supervisory AME8570M n General Description The AME8570M family allows the user to customize the CPU reset function without any external components. The user has serveral choice of reset voltage thresholds, reset time intervals, and output driver configurations, all

BC846 Infineon

Abstract: BC847BL3 bc846 base resistance for SOT23 BC 945 BC847BF marking 2Gs 1bs sot323 BC 945 p marking 1F SOT323
Contextual Info: BC846.-BC850. NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856.-BC860. PNP • Pb-free (RoHS compliant) package 1)

SMD MARKING CODE TRANSISTOR 501

Abstract: TRANSISTOR SMD MARKING CODE 3d TRANSISTOR SMD MARKING CODE rd TRANSISTOR SMD MARKING CODE 501 TRANSISTOR SMD MARKING CODE SP MV smd marking code SOT23 marking code 33 SMD ic TRANSISTOR SMD CODE PACKAGE SOT23 501 SMD transistor MARKING CODE 213 SMD transistor MARKING CODE 43
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC856; BC857 PNP general purpose transistors Product specification Supersedes data of 1997 Apr 17 1999 Apr 12 Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857

top marking 1B sot23

Abstract: BC857 3fs TSLP3 1B marking transistor
Contextual Info: BC857.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC847.-BC850. NPN • Pb-free (RoHS compliant) package

AME8570AEIUAE29Z

Contextual Info: AME µProcessor Supervisory AME8570 n General Description The AME8570 family allows the user to customize the CPU reset function without any external components. The user has serveral choice of reset voltage thresholds, reset time intervals, and output driver configurations, all

AME8570AEIUBF29Z

Abstract: en050.00.b08 TSOT-23 AME8570AEETAE26Y AME8570BEETAF44Z AME8570BEET AME8570 1AME BNGW TSOT-23 junction case
Contextual Info: AME µProcessor Supervisory AME8570 n General Description n Functional Block Diagram AME8570 Push-Pull RESET/ RESETB The AME8570 family allows the user to customize the CPU reset function without any external components. The user has serveral choice of reset voltage thresholds,

marking 70.4

Contextual Info: AME, Inc. µProcessor Supervisory AME8570 n General Description n Functional Block Diagram AME8570 Push-Pull RESET/ RESETB The AME8570 family allows the user to customize the CPU reset function without any external components. The user has serveral choice of reset voltage thresholds,

package marking sot 223

Abstract: marking 7d sot-323 sot markings marking CODE box SOT23
Contextual Info: Section 5 Small-Signal Tuning and Switching Diodes In Brief. . . Packaging options include plastic DIPs and surface mount packages. Most SO T-23, SC-59, S C -70/S O T -323 and SOT-223 package devices are only available in Tape and Reel. NOTE: All SOT-23 package devices have had a “T1” suffix

Latch

Abstract: BIPOLAR HALL EFFECT SWITCH, SOT23
Contextual Info: TSH190 Bipolar High Voltage Hall Effect Latch TO-92S Pin Definition: 1. VCC 2. GND 3. Output SOT-23 Pin Definition: 1. VCC 2. Output 3. GND Description TS190, Hall-Effect sensor, designed for electronic commutation of brush-less DC motor applications. The device

infineon schottky diode bat64

Abstract: marking code 14 diode BAT64 BAT64-02V BAT64-02W BAT64-04 BAT64-04T BAT64-04W BAT64-05 BAT64-05W
Contextual Info: BAT64. Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage BAT64 BAT64-02V BAT64-02W BAT64-04 BAT64-04T BAT64-04W ! BAT64-05 BAT64-05W

Latch

Abstract: TSH188 TSH188CX RFG
Contextual Info: TSH188 Ultra High Sensitivity Hall Effect Latch TO-92S Pin Definition: 1. VCC 2. GND 3. Output SOT-23 Pin Definition: 1. VCC 2. Output 3. GND Description TSH188 Hall-effect sensor is a temperature stable, stress-resistant sensor. Superior high-temperature

Contextual Info: BAT64. Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101