TSLP3 Search Results

transistor

Abstract: TRANSISTOR Outlines all transistor all transistor DATA RF TRANSISTOR TSLP3 all transistor data book all transistor data sheet all transistor datasheet TRANSISTOR APPLICATIONS
Contextual Info: TSLP 3 outlines Thin Small Leadless Package with 3 contact pads bottom view Top view 1,0 ± 0,05 mm 1,0 ± 0,05 mm TSLP 3 0,15mm 0,20mm 0,6 ± 0,05 mm 0,15mm 0,05mm 0,25mm 0,40mm 0,25mm 0,05mm 0,05mm 0,05mm Side view TSLP3: TSLP3: Leadless Leadlesstransistor

prtr5v0u6s

Abstract: csp1040 TSSOP20 FOOTPRINT ip4065cx11 smd transistor GY sot89 IP4065CX11/LF BV 9y transistor smd IP4058CX8/LF IP4280CZ10 smd transistor GY
Contextual Info: Dark Green − NXP‘s transfer to halogen-free products Why Dark Green? We as NXP are deeply committed to developing eco-friendly products and integrating environmental safety aspects in all manufacturing processes. For our packaging technology this meant a shift to lead-free and halogen-free “Dark Green”, years

marking code INFINEON

Abstract: BBY53 M 21 marking code diode BAR63-02V BBY53-02L BBY53-02V BBY53-02W BBY53-03LRH BBY53-03W BBY53-05W
Contextual Info: BBY53. Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-03LRH BBY53 BBY53-05W

BFR193L3

Abstract: BFR340L3 marking FA
Contextual Info: BFR340L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • Transition frequency of 14 GHz 3 1 • High insertion gain 2 • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

BCR133

Abstract: BCR133F BCR133L3 SEMH11
Contextual Info: BCR133./SEMH11 NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1 = 10 kΩ, R2 = 10 kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching

Contextual Info: RF & Protection Devices Board Name BFP 540ESD Evalboard Products Description Order No. BFP 540ESD A low-cost, low-current broadband UHF low noise amplifier with the ESD-robust BFP 540ESD RF transistor. BFP540ESD board This board shows the ESD-robust BFR 460L3 board in ISM and

3BR0665JF

Abstract: 2qs02g BTN7970B ICB1FL02G ICE2qs01 equivalent stepper+434 3br0665 TLE8209-1
Contextual Info: Evaluation boards for Automotive, Industrial and Multimarket Applications 2010 [ www.infineon.com/evalkits ] Contents Automotive 05 Motor control 11 Industrial control & automation 15 Power management 19 Lighting & LED 22 Consumer 25 Communication 30 Microcontroller

marking Z1

Abstract: BCR847BF
Contextual Info: ESD5V3U2U. Ultra-Low Capacitance ESD Diode Array • ESD / transient protection of high-speed data lines exceeding IEC61000-4-2 ESD : 20 kV (air / contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): 3 A (8/20 µs) • Max. working voltage: 5.3 V

Infineon Technologies transistor 4 ghz

Abstract: BFR193L3 BFR340L3 BFR34* transistor marking FA
Contextual Info: BFR340L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • Transition frequency of 14 GHz 3 • High insertion gain 1 2 • Ideal for low current amplifiers and oscillators • Pb-free RoHS compliant package 1) • Qualified according AEC Q101

marking code MS SOT323

Abstract: BC846 BC850 BC856 BC856A BC856B BC856BW BC857A BC857B BC860
Contextual Info: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)

AN086

Abstract: ESD5V3U4RRS SJ 76 TVS dIODE AN167 ESD24 ESD5V3U1U-02LRH BFP740 SJ 76 cLAMPING dIODE SODX SOT363 flash
Contextual Info: ESD Protection Solutions Consumer and wireless communication [ www.infineon.com/tvsdiodes ] The ESD threat In today’s electronics, being faster, smaller and smarter creates profitability by enabling new and better applications. The race to pack even more high-speed functions in a smaller

A1296

Abstract: VS902SL
Contextual Info: VS902SL 注文コード No. NA1 29 6B 三洋半導体データシート 半導体データシート No.NA1296A をさしかえてください。 VS902SL 低容量 TVS ダイオード 汎用保護デバイス 用途 ・ USB2.0。 ・ 携帯通信用。 ・ STBMP3、DVD、DSC、LCD など。

BFR360L3

Contextual Info: BFR360L3 NPN Silicon RF Transistor Preliminary data
Low voltage/ Low current operation 3
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm
Low noise figure: 1.0 dB at 1.8 GHz 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!

circuit diagram wireless spy camera

Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint

Contextual Info: BFR840L3RHESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.

MARKING 3FS

Abstract: MARKING CODE 21E SOT23 marking 3ks
Contextual Info: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN 1 2006-09-29

MARKING CODE R7 RF TRANSISTOR

Contextual Info: BFR740L3 NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor 3 • Provides outstanding performance for 1 a wide range of wireless applications up to 10 GHz and more 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz

Contextual Info: BCR191. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 22 kΩ , R2 = 22 kΩ BCR191/F/L3 BCR191T/W C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR191 WOs

Contextual Info: BCR135. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=10 kΩ, R2=47 kΩ • BCR135S: Two internally isolated transistors with good matching in one multichip package • BCR135S: For orientation in reel see

BCR196

Abstract: BCR196F BCR196L3 BCR196T BCR196W SC75 3C MARKING
Contextual Info: BCR196. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 47kΩ , R2 = 22kΩ BCR196/F/L3 BCR196T/W C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR196 WXs 1=B

BAV70S

Abstract: BAV70 INFINEON BAV70U
Contextual Info: BAV70. Silicon Switching Diode • For high-speed switching applications • Common cathode configuration BAV70 BAV70F BAV70L3 BAV70T BAV70W BAV70S BAV70U 6 3 4 5 D 3 D 2 D 1 D 1 1 D 4 2 Type BAV70 BAV70F* BAV70L3 * BAV70S BAV70T BAV70U BAV70W 1 D 2 2 3

Contextual Info: BCR135./SEMH9 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=10kΩ, R2=47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

MARKING W2S

Contextual Info: BCR189. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 22 kΩ BCR189F/L3 BCR189T C 3 R1 1 B 2 E EHA07180 Type Marking Pin Configuration Package BCR189F W2s 1=B 2=E 3=C

Contextual Info: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation 3 • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz 1 2 *Short-term description ESD: Electrostatic discharge sensitive device, observe handling precaution!