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    SOT23 TRANSISTOR MARKING ZF Search Results

    SOT23 TRANSISTOR MARKING ZF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    SOT23 TRANSISTOR MARKING ZF Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    102k1k

    Abstract: 20M diode zener LDTDG12GPLT1G
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPLT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)


    Original     		LDTDG12GPLT1G 500mA OT-23 102k1k 20M diode zener LDTDG12GPLT1G PDF

    LDTBG12GPLT1G

    Abstract: 102k1k marking 20M resistor 20M diode zener
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTBG12GPLT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)


    Original     		LDTBG12GPLT1G 500mA OT-23 LDTBG12GPLT1G 102k1k marking 20M resistor 20M diode zener PDF

    sot23 transistor marking ZF

    Abstract: No abstract text available
    Text: 2N4126 / MMBT4126 2N4126 MMBT4126 C E C B TO-92 B SOT-23 E Mark: ZF PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents to 10 µA as a switch and to 100 mA as an amplifier. Absolute Maximum Ratings*


    Original     		2N4126 MMBT4126 2N4126 OT-23 2N4126TA 2N4126BU O-92-3 sot23 transistor marking ZF PDF

    102k1k

    Abstract: LDTBG12GPT1G SC-89
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTBG12GPT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)


    Original     		LDTBG12GPT1G 500mA OT-23 SC-89 463C-01 463C-02. 102k1k LDTBG12GPT1G SC-89 PDF

    MARKING W3 SOT23 TRANSISTOR

    Abstract: SOT-23 ZF MARKING ZF SOT-23 Mark ZF sot-23 MARKING CODE Zf 2n4126
    Text: 2N4126 / MMBT4126 2N4126 MMBT4126 C E C B TO-92 B SOT-23 E Mark: ZF PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents to 10 µA as a switch and to 100 mA as an amplifier. Absolute Maximum Ratings*


    Original     		2N4126 MMBT4126 2N4126 OT-23 2N4126TA 2N4126BU O-92-3 MARKING W3 SOT23 TRANSISTOR SOT-23 ZF MARKING ZF SOT-23 Mark ZF sot-23 MARKING CODE Zf PDF

    NB SOT-23 NPN

    Abstract: ch3904 CHT44 transistor marking s1a transistor s1p marking 1P sot-23 T05 sot-23 transistor marking t05 transistor C4G sot-23 39 MARKING SOT223
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking Collector to Emitter Voltage VCEO V Collector Current DC Current Gain IC mA HFE @ VCE / IC Min-Max V / mA PLASTIC MATERIAL USED CARRIES UL 94V-0 Saturation Typical Voltage Power Gain Outline Collector to


    Original     		CH3904T CHT2222T 2SC4097 CH3904W CHT05 CHT42 CHTA42L CHT44 2SC2411K 2SC2412K NB SOT-23 NPN ch3904 CHT44 transistor marking s1a transistor s1p marking 1P sot-23 T05 sot-23 transistor marking t05 transistor C4G sot-23 39 MARKING SOT223 PDF

    N5 npn transistor

    Abstract: Marking N5
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTC144ELT1G zApplications Inverter, Interface, Driver 3 zFeatures 1 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input


    Original     		LDTC144ELT1G OT-23 N5 npn transistor Marking N5 PDF

    A6c transistor

    Abstract: transistor a6c MARKING A6C SOT-23 LDTA144ELT1G
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA144ELT1G zApplications Inverter, Interface, Driver 3 zFeatures 1 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input


    Original     		LDTA144ELT1G OT-23 A6c transistor transistor a6c MARKING A6C SOT-23 LDTA144ELT1G PDF

    a6j* pnp transistor

    Abstract: transistor A6j LDTA143ELT1G Inverter A6J a6j datasheet marking A6J
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA143ELT1G zApplications Inverter, Interface, Driver 3 zFeatures 1 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input


    Original     		LDTA143ELT1G OT-23 a6j* pnp transistor transistor A6j LDTA143ELT1G Inverter A6J a6j datasheet marking A6J PDF

    marking a8c

    Abstract: MARKING A8C SOT-23 A8c transistor
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTC144ELT1G zApplications Inverter, Interface, Driver 3 zFeatures 1 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input


    Original     		LDTC144ELT1G OT-23 marking a8c MARKING A8C SOT-23 A8c transistor PDF

    transistor p13

    Abstract: LDTA114WLT1G marking P13 sot-23 p13 transistor
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA114WLT1G zApplications Inverter, Interface, Driver 3 zFeatures 1 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input


    Original     		LDTA114WLT1G OT-23 transistor p13 LDTA114WLT1G marking P13 sot-23 p13 transistor PDF

    2SB772P

    Abstract: SOT-23 marking 717 cht9435zpt CH3906XPT 9435Z CHT2907XPT CH772PT CH3906 CH772P 2SB772PT-E
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Collector to Emitter Marking Voltage VCEO V Collector Current DC Current Gain IC mA HFE @ VCE / IC Min-Max V / mA -500 -200 -150 -150 -150 -500 -200 -150 -150 -150 -500 -200 -600 -100 -100 -100 -600 -200 -600


    Original     		SC-62 2SB772P SOT-23 marking 717 cht9435zpt CH3906XPT 9435Z CHT2907XPT CH772PT CH3906 CH772P 2SB772PT-E PDF

    PNP marking NY sot-223

    Abstract: TRANSISTOR S2A 2F PNP SOT23 2SA1036K s2A SOT23 marking NY sot-223 transistors sot-223 transistor circuit s2A PART MARKING SOT-23 TRANSISTOR CH3906
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking Collector to Emitter Voltage VCEO V PLASTIC MATERIAL USED CARRIES UL 94V-0 Saturation Typical Voltage Power Gain Outline Collector to Dissipation Bandwidh No. Emitter Collector Current DC Current Gain


    Original     		CHTA64X CHT3906X CHT2907X CHT4033X CHT5401X CHTA92X CHTA64Z CHT3906Z CHT2907Z CHT2955Z PNP marking NY sot-223 TRANSISTOR S2A 2F PNP SOT23 2SA1036K s2A SOT23 marking NY sot-223 transistors sot-223 transistor circuit s2A PART MARKING SOT-23 TRANSISTOR CH3906 PDF

    2SD882P

    Abstract: ch3904 marking J1 sot-23 T05 sot-23 sot-23 marking NE MARKING J3 SOT-23 marking NB SOT-23 CHT846BWPTR LT 723 ic marking J2 sot-23
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Collector to Emitter Marking Voltage VCEO V Collector Current DC Current Gain IC mA HFE @ VCE / IC Min-Max V / mA 200 500 200 150 150 150 500 200 100 100 100 50 500 200 600 600 100 100 100 150 150 150 200


    Original     		SC-62 2SD882P ch3904 marking J1 sot-23 T05 sot-23 sot-23 marking NE MARKING J3 SOT-23 marking NB SOT-23 CHT846BWPTR LT 723 ic marking J2 sot-23 PDF

    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


    Original     		OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT PBSS5240T 40 V, 2 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2001 Oct 31 2004 Jan 15 NXP Semiconductors Product data sheet 40 V, 2 A PNP low VCEsat (BISS) transistor PBSS5240T FEATURES QUICK REFERENCE DATA


    Original     		PBSS5240T OT89/SOT223 R75/02/pp9 PDF

    sot23 transistor marking ZF

    Abstract: PBSS4240T PBSS5240T
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PBSS5240T 40 V, 2 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2001 Oct 31 2004 Jan 15 NXP Semiconductors Product data sheet 40 V, 2 A PNP low VCEsat (BISS) transistor PBSS5240T FEATURES QUICK REFERENCE DATA


    Original     		PBSS5240T OT89/SOT223 R75/02/pp9 sot23 transistor marking ZF PBSS4240T PBSS5240T PDF

    sot23 transistor marking ZF

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS5240T 40 V low VCEsat PNP transistor Product specification 2001 Oct 31 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5240T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage


    Original     		M3D088 PBSS5240T OT89/SOT223 SCA73 613514/01/pp12 sot23 transistor marking ZF PDF

    L2SD2114KVLT1G

    Abstract: L2SD2114KWLT1G
    Text: LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor L2SD2114KVLT1G Series zFeatures 1 High DC current gain. hFE = 1200 Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)


    Original     		L2SD2114KVLT1G 500mA 236AB) OT-23 L2SD2114KWLT1G PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor L2SD2114K*LT1G zFeatures 1 High DC current gain. hFE = 1200 Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements.


    Original     		L2SD2114K 500mA 236AB) OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated BCV46 60V PNP DARLINGTON TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • BVCEO > -60V Darlington Transistor hFE > 10k @ 100mA for high gain IC = -500mA High Continuous Collector Current


    Original     		BCV46 100mA -500mA BCV47 AEC-Q101 J-STD-020 MIL-STD-202, DS33002 PDF

    BCV47TC

    Abstract: BCV47
    Text: A Product Line of Diodes Incorporated BCV47 60V NPN DARLINGTON TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • BVCEO > 60V Darlington Transistor hFE > 10k @ 100mA for high gain IC = 500mA high Continuous Collector Current


    Original     		BCV47 100mA 500mA BCV46 AEC-Q101 J-STD-020 MIL-STD-202, DS33001 BCV47TC BCV47 PDF

    MMSTA28

    Abstract: SSTA28 T116 T146
    Text: SSTA28 / MMSTA28 Transistors NPN general purpose transistor SSTA28 / MMSTA28 zFeatures 1 BVCES < 80V Ic=100µA) zExternal dimensions (Unit : mm) SSTA28 2.9±0.2 MMSTA28 SMT3 RAT T146 3000 2.9±0.2 1.1 +0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 Unit V V V A


    Original     		SSTA28 MMSTA28 SSTA28 SC-59 OT-346 MMSTA28 T116 T146 PDF

    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF