L2SD2114K Search Results
L2SD2114K Datasheets (5)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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L2SD2114KLT1 | Leshan Radio Company | Epitaxial planar type NPN silicon transistor | Original | |||
L2SD2114KVLT1 | Leshan Radio Company | Epitaxial planar type NPN silicon transistor | Original | |||
L2SD2114KVLT1G | Leshan Radio Company | Epitaxial planar type NPN silicon transistor | Original | |||
L2SD2114KWLT1 | Leshan Radio Company | Epitaxial planar type NPN silicon transistor | Original | |||
L2SD2114KWLT1G | Leshan Radio Company | Epitaxial planar type NPN silicon transistor | Original |
L2SD2114K Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor L2SD2114KVLT1G Series zFeatures 1 High DC current gain. hFE = 1200 Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) |
Original |
L2SD2114KVLT1G 500mA 236AB) OT-23 | |
Contextual Info: LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor L2SD2114KVLT1G Series Series zFeatures S-L 2SD2114KVLT1G 1 High DC current gain. hFE = 1200 Typ.) 2) High emitter-base voltage. 3 VEBO =12V (Min.) 3) Low VCE (sat). 1 VCE (sat) = 0.18V (Typ.) |
Original |
L2SD2114KVLT1G 2SD2114KVLT1G 500mA 236AB) AEC-Q101 S-L2SD2114KVLT1G OT-23 | |
L2SD2114KVLT1G
Abstract: L2SD2114KWLT1G
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Original |
L2SD2114KVLT1G 500mA 236AB) OT-23 L2SD2114KWLT1G | |
Contextual Info: LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor L2SD2114K*LT1G zFeatures 1 High DC current gain. hFE = 1200 Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements. |
Original |
L2SD2114K 500mA 236AB) OT-23 | |
L2SD2114KVLT1
Abstract: L2SD2114KVLT1G L2SD2114KWLT1 L2SD2114KWLT1G
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Original |
L2SD2114K 500mA 236AB) OT-23 L2SD2114KVLT1 L2SD2114KVLT1G L2SD2114KWLT1 L2SD2114KWLT1G | |
Contextual Info: LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor L2SD2114KVLT1G Series Series zFeatures S-L2SD2114KVLT1G 1 High DC current gain. hFE = 1200 Typ.) 3 2) High emitter-base voltage. VEBO =12V (Min.) 1 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) |
Original |
L2SD2114KVLT1G S-L2SD2114KVLT1G 500mA 236AB) AEC-Q101 S-L2SD2114KVLT1G OT-23 | |
2x062h
Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
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Original |
ZMM22 ZMM24 ZMM27 ZMM43 ZMM47 2x062h gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062 | |
copper wire
Abstract: LH8550QLT1G L2SA1037AKRLT1G SSBC847BLT1G LBAS21CLT1G L9015HRLT1G LMBT3904SLT1G lmbt3906lt1g lrc LBCX19LT1G L9012RLT1G
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Original |
L2SC2411KRLT1G L2SC2412KQLT1G L2SC2412KRLT1G L2SC2412KSLT1G L2SC3906KALT1G L2SD1781KRLT1G L2SD2114KVLT1G L2SD2114KWLT1G L9012QALT1G L9012QLT1G copper wire LH8550QLT1G L2SA1037AKRLT1G SSBC847BLT1G LBAS21CLT1G L9015HRLT1G LMBT3904SLT1G lmbt3906lt1g lrc LBCX19LT1G L9012RLT1G |