Untitled
Abstract: No abstract text available
Text: 19-1240: Rev 0; 6/97 JVXA'AAJVX Sw itched-Capacitor Voltage Inverters _ Applications Local -5V Supply from 5V Logic Supply Features ♦ 5-Pin SOT23-5 Package ♦ 99% Voltage Conversion Efficiency ♦ Invert Input Supply Voltage ♦ 0.7mA Quiescent Current MAX870
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OT23-5
MAX870)
MAX870C/D
MAX870EUK
MAX871
MAX871EUK
OT23-5
5fi7bb51
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PAA 737
Abstract: MAX6145 ebaa
Text: 75- 7777: Rev. 0; 12/96 JVWYXAJVX SOT23, Low-Cost, Low-Dropout, 3-Terminal Voltage References General Description Initial accuracy for these devices is ±1%. The output temperature coefficient is typically 15ppm/°C, and guarante ed to be less than 50ppm /°C except
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MAXG12S/MAX6141/MAX614S/MAX6150/MAX6160
MAX6125/MAX6141
/MAX6145/MAX6150/MAX6160
200mV
MAX61xx
translat48
OT-143
PAA 737
MAX6145
ebaa
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marking code ce SOT23
Abstract: MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE
Text: Surface M ount Transistors NPN Transistors/SOT23 Type Num ber hpE @ VCE/IC M arking Code* Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 1D MMBT2222A IMBT/MMBT3904 MMBT4401 V ceo V CE SAT @ Ic /lß fT @ V ce/I c Cqb @ VCB V/m A max.V m A/m A
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Transistors/SOT23
MMBT2222A
IMBT/MMBT3904
MMBT4401
MMBTA05
MMBTA06
MMBT5551
MMBTA42
Appl45
80jjs;
marking code ce SOT23
MOSFET MARKING 3F
marking code 3a sot23
CE MARKING CODE
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MOSFET MARKING 3F
Abstract: BT3904 sot23 s07 marking 702 sot23 Diode marking CODE 1M transistor marking 6c 2F PNP SOT23 marking code 2f 2F P marking NA MARKING SOT23
Text: Surface M o u n t Transistors NPN Transistors/SOT23 Type Num ber M arking Code* VcEO Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 ID MMBT2222A IMBT/MMBT3904 MMBT4401 hpE@ VCE/IC VcE SAT@ Ic/Ib fT @ VCE/IC Cqb @ Vcb V/m A max.V mA/m A MHz
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Transistors/SOT23
MMBT2222A
BT3904
MMBT4401
MMBTA05
MMBTA06
MMBT5551
MMBTA42
BS817
BS850
MOSFET MARKING 3F
sot23 s07
marking 702 sot23
Diode marking CODE 1M
transistor marking 6c
2F PNP SOT23
marking code 2f
2F P marking
NA MARKING SOT23
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74hc47
Abstract: 7S66 AX394 74HC4 AX395 C4351 tc7566
Text: Industry’s Only CMOS Switches with 20Q On-Resistance in 5-Pin SOT23 The Only Low-Voltage Switches Guaranteed for 2V Operation Devices in Maxim’s family of single-pole/single-throw SPST low-voltage sw itches not only feature normally open (NO) and norm ally closed (NC) functions, bu t are also available in 5-pin SO T 23 packages
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greatly350
AX396/3
AX398/399
AX453
8/16-Channel
DG428/429
DG406/407
DG408/409
HC405
74hc47
7S66
AX394
74HC4
AX395
C4351
tc7566
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ZR431
Abstract: No abstract text available
Text: ADJUSTABLE PRECISION ZENER SHUNT REGULATOR ZR431 ISSUE 1 - OCTOBER 1995 DEVICE DESCRIPTION FEATURES The ZR431 is a three terminal adjustable shunt regulator offering excellent tem perature stability and output current handling capability up to 100mA. The output voltage may be set
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ZR431
ZR431
100mA.
OT223
100mA
1170S7A
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relay Re 04501
Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031
Text: ••• • V . / • * •. Agilent Technologie: Innovating the HP Way ' — ENGI86 Service Guid< Agilent 34970A D ata Acquisition / Switch U nit C opyright 1999 H ew lett-Packard Company All Rights Reserved. P rinting History E dition 1, Ju n e 1997
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ENGI86
4970A
E1199
relay Re 04501
JFET TRANSISTOR REPLACEMENT GUIDE j201
re 04501 relay
wabash relay
1SK6-0001
wabash reed relay
JFET TRANSISTOR REPLACEMENT GUIDE e201
npdsu406
34901a
ysi 44031
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PDF
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WMP7032
Abstract: WT-2307
Text: WMP7032 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT - 3 AMPERS 1 DRAIN SOUCE VOLTAGE - 20 VOLTAGE GATE Features: 2 SOURCE *Super high dense cell design for low Ros ON R DS(ON) <80 mΩ @VGS =-4.5V R DS(ON) <100 m Ω@V GS =-2.5V
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WMP7032
OT-23
OT-23
WT-2307
WMP7032
WT-2307
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PDF
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WT2307
Abstract: WT-2307
Text: WT-2307 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT - 3 AMPERES 1 Features: DRAIN SOURCE VOLTAGE GATE *Super high dense cell design for low RDS ON R DS(ON) <80 mΩ @VGS =-4.5V R DS(ON) <100 m Ω@V GS =-2.5V *Rugged and Reliable
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WT-2307
OT-23
OT-23
WT2307
WT-2307
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Untitled
Abstract: No abstract text available
Text: WT-2307 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT - 3 AMPERS 1 Features: DRAIN SOUCE VOLTAGE - 20 VOLTAGE GATE *Super high dense cell design for low RDS(ON) R DS(ON) <80 mΩ @VGS =-4.5V R DS(ON) <100 m Ω@V GS =-2.5V
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WT-2307
OT-23
OT-23
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Untitled
Abstract: No abstract text available
Text: WT-2307 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT * “G” Lead Pb -Free - 3 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE *Super high dense cell design for low RDS(ON) R DS(ON) <80 mΩ @VGS =-4.5V R DS(ON) <100 m Ω@V GS =-2.5V
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WT-2307
OT-23
OT-23
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PDF
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MARKING S07
Abstract: BS807 transistor s07
Text: BS807 N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features • · · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly SOT-23 A Dim Min Max A 0.37 0.51 B 1.19
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BS807
OT-23
OT-23,
MIL-STD-202
17RRENT
DS11301
MARKING S07
BS807
transistor s07
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transistor s07
Abstract: n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR BS807 DS11301 sot23 s07 MARKING S07 MARKING S07 SOT23
Text: BS807 N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features • · · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly SOT-23 A D TOP VIEW G Mechanical Data
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Original
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BS807
OT-23
OT-23,
MIL-STD-202
DS11301
transistor s07
n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
BS807
sot23 s07
MARKING S07
MARKING S07 SOT23
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MARKING S07
Abstract: DS11301 BS807 MARKING S07 SOT23
Text: BS807 N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR POWER SEMICONDUCTOR Features • • • • • High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly SOT-23 A D
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BS807
OT-23
OT-23,
MIL-STD-202
DS11301
MARKING S07
BS807
MARKING S07 SOT23
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ph 4148 zener diode
Abstract: ka6 transistor smd Marking Code SMD databook melf diodes color code 4148 TRANSISTOR SMD MARKING CODE w2 GLUE IR-130 smd diode sod-323 marking code L2 smd diode marking 5d SOD-323 SOD-123 a2 4148 TRANSISTOR SMD MARKING CODE 352
Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book small signal diodes vishay semiconductors vHN-db1102-0407 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vHN-db1102-0407
ph 4148 zener diode
ka6 transistor smd
Marking Code SMD databook
melf diodes color code 4148
TRANSISTOR SMD MARKING CODE w2
GLUE IR-130
smd diode sod-323 marking code L2
smd diode marking 5d SOD-323
SOD-123 a2 4148
TRANSISTOR SMD MARKING CODE 352
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ph 1n4148
Abstract: DO219AB Syd17m 1n914 SOD123 s07j Do219AB C 13 PH Zener diode 1N4148 sod123 ll4148 sod123 1n4148 ph 1N4148W SOD123
Text: S OD 3 2 3 S OD 12 3 DO 2 19 A B S M F S OT 2 3 M i c r o MEL F Q u a d r o MEL F S OD 8 0 M i n i MEL F S OD 8 0 DO 3 5 w w w. v i s h a y. c o m Selector Guide SMALL Signal switching diodes s m a l l s i g n a l DIODE S V I S HAY INTERTE C HNOLO G Y , IN C .
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400ce
VMN-SG2114-0704
ph 1n4148
DO219AB
Syd17m
1n914 SOD123
s07j Do219AB
C 13 PH Zener diode
1N4148 sod123
ll4148 sod123
1n4148 ph
1N4148W SOD123
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TRANSISTOR SOT-23 marking JE
Abstract: Diode SOT-23 marking JE BS807 MARKING S07 DS11301
Text: BS807 VISHAY N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR /Li T E M I ri / POWERSEMICONDUCTOR I Features High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly TOPiVIEW
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BS807
OT-23,
MIL-STD-202
OT-23
DS11301
TRANSISTOR SOT-23 marking JE
Diode SOT-23 marking JE
BS807
MARKING S07
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PDF
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Nippon capacitors
Abstract: MAX4166EPA
Text: >M yiXL*4 19-1224; Rev 0; 4/97 High-Output-Drive, Precision, Low-Power, Single Supply, Rail-to-Rail I/O Op Amps w ith Shutdown The MAX4166/MAX4168 have a shutdown mode that re d u ce s su p p ly cu rre n t to 38 jA per am p lifie r and places the outputs into a high-im pedance state. The
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AX4165-MAX4169
MAX4166/MAX4168
AX4165-M
AX4169
4165-M
MAX4167EPA
MAX4167ESA
MAX4168EPD
MAX4168ESD
MAX4160EUB
Nippon capacitors
MAX4166EPA
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PDF
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ecg semiconductors master replacement guide
Abstract: ecg master replacement guide mkl b32110 siemens mkp B32650 c945 p 331 ks transistor IC,MASTER master replacement guide Kennlinie KTY 10-6 siemens b32110 A2005 transistor
Text: Liebe Schuricht-Kunden, Ihre Zufriedenheit ist unser größtes Anliegen. Aus diesem Grunde versuchen wir, Ihnen Informationen und Ware stets zum richtigen Zeitpunkt verfügbar zu machen. Das gilt insbesondere auch für die Produkte der Siemens AG mit den drei
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DS11301
Abstract: BS807 MARKING S07 SOT23
Text: BS807 N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly Mechanical Data Case: SOT-23, Plastic Terminals: Solderable per
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BS807
OT-23,
MIL-STD-202
OT-23
DS11301
BS807
MARKING S07 SOT23
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PDF
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s07a
Abstract: 21s07a 21s07 PAC21S07AS S50K 4.7 microfarad capacitor 22jL
Text: a OBJECTIVE » k CALIFORNIA MICRO DEVICES PAC ►► ► ► ► 2 1 S07A P/ACTIVE ACTIVE SCSI 2/3 TERM INATIO N NETW ORK Pin Assignments Features • • • • • • Fully backward com patible to th e industry standard 2107 and 2 1 S07A SCSI term inators
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21S07A
21S07A
21S07AS
16-Pin
lfl31bMQ
s07a
21s07
PAC21S07AS
S50K
4.7 microfarad capacitor
22jL
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PDF
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Untitled
Abstract: No abstract text available
Text: Microsemi m Chatsworth, CA * Prog ress P o w ered b y T echnology 9261 Owensmouth Ave. Chatsworth, C a 91311 Phone: 81 8 7 0 1-4 9 3 3 Fax: (8 1 8 )7 0 1 -4 9 3 9 Features • • Surface Mount S O T-23 Package Capable of 350m W atts of Power Dissipation
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OT-23
00G4547
MMBT4401
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PDF
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1972.0005 Transformer
Abstract: MAGNETICA ferrite TRANSFORMER L6566B MAGNETICA TRANSFORMER T4A 392 fuse 100n x2 TSM1014 EER28L-PC44 6R8 SMD STPS20H
Text: AN3089 Application note 19 V - 65 W quasi-resonant flyback adapter using L6566B and TSM1014 Introduction This application note describes the characteristics and features of a 65 W demonstration board EVL6566B-65W-QR , tailored to the specifications of a typical hi-end portable
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AN3089
L6566B
TSM1014
EVL6566B-65W-QR)
EVL6566B-65W-QR:
1972.0005 Transformer
MAGNETICA ferrite TRANSFORMER
MAGNETICA TRANSFORMER
T4A 392 fuse
100n x2
TSM1014
EER28L-PC44
6R8 SMD
STPS20H
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PDF
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Untitled
Abstract: No abstract text available
Text: 191257; Rev O: 7/97 > k iy j x i> k i Low-Dropout, 120mA Linear Regulators General Description The devices feature Dual Mode operation: their out put voltage is preset at 3.15V for the T versions, 2.84V for the S versions, or 2.80V for the R versions or can be
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120mA
MAX8874
MAX8877/MAX8878.
lb357
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PDF
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