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    SOT23 J6 Search Results

    SOT23 J6 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    REF1112AIDBZRG4 Texas Instruments 1uA, SOT23-3 10ppm/C Shunt Voltage Reference 3-SOT-23 -40 to 85 Visit Texas Instruments Buy
    LM4132AQ1MFR3.0 Texas Instruments Automotive SOT23 Precision Low Dropout Voltage Reference 5-SOT-23 -40 to 125 Visit Texas Instruments Buy
    LM4132CQ1MFT3.0 Texas Instruments Automotive SOT23 Precision Low Dropout Voltage Reference 5-SOT-23 -40 to 125 Visit Texas Instruments Buy
    REF1112AIDBZR Texas Instruments 1uA, SOT23-3 10ppm/C Shunt Voltage Reference 3-SOT-23 -40 to 85 Visit Texas Instruments Buy

    SOT23 J6 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    C1608X7R1H473K

    Abstract: PCB yageo smd 1206 capacitor 18 pf capacitor smd tdk 9C06031A1000FKHFT NCS2500 NCS2502 EXCML32 PCB yageo smd 1206 NCS2501 108-0740-001
    Text: OPAMP1EVB Op Amp Evaluation Board Manual SOT23, SC70, and SOIC8 Package http://onsemi.com Description This document describes the SOT23, SC70, and SOIC8 package Op Amp evaluation board. It should be used in conjunction with the appropriate data sheet which contains


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    diode J4S

    Abstract: j4a diode ZC831 832A J5B SOT23 j4s diode ZC834A DIODE j5s ZC830A ZC831A
    Text: ZC830/A/B to ZC836/A/B SOT23 SILICON VARIABLE CAPACITANCE DIODES ISSUE 5 – JANUARY 1998 1 FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low IR Enabling Excellent Phase Noise Performance IR Typically <200pA at 25V 2 1 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS.


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    ZC830/A/B ZC836/A/B 200pA ZC830) ZC830B) ZC830 ZC830A ZC830B diode J4S j4a diode ZC831 832A J5B SOT23 j4s diode ZC834A DIODE j5s ZC830A ZC831A PDF

    j4a diode

    Abstract: ZC830B ZC830 ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A
    Text: ZC830/A/B to ZC836/A/B SOT23 SILICON VARIABLE CAPACITANCE DIODES ISSUE 5 – JANUARY 1998 1 FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low IR Enabling Excellent Phase Noise Performance IR Typically <200pA at 25V 2 1 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS.


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    ZC830/A/B ZC836/A/B 200pA ZC830) ZC830B) ZC830 ZC830A ZC830B j4a diode ZC830B ZC830 ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A PDF

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    Abstract: No abstract text available
    Text: ZC830/A/B SOT23 SILICON VARIABLE CAPACITANCE DIODES to ZC836/A/B r ISSUE 5 - JANUARY 1998 FE A T U R E S * Close Tolerance C-V Characteristics * High Tuning Ratio * Low lR Enabling Excellent Phase Noise Performance lR Typ ically <200pA at 25V 1 * 3 1 SOT23


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    200pA ZC830/A/B ZC836/A/B brZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A PDF

    j4a diode

    Abstract: No abstract text available
    Text: SOT23 SILICON VARIABLE CAPACITANCE DIODE ZC829A ISSUE 3 – JANUARY 1998 FEATURES * VHF to UHF operation * Low IR * Enabling Excellent Phase Noise Performance * IR Typically <200pA at 25V APPLICATIONS * Mobile radios and Pagers * Cellular telephones * Voltage controlled Crystal Oscillators


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    200pA ZC829A ZC829A ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A j4a diode PDF

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    Abstract: No abstract text available
    Text: SOT23 SILICON VARIABLE CAPACITANCE DIODES ZC830/A/B to ZC836/A/B ISSUE 4 -JU N E 1996_ I FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low lR Enabling Excellent Phase Noise Performance lRTypically <200pA at 25V .T ABSOLUTE MAXIMUM RATINGS.


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    ZC830/A/B ZC836/A/B 200pA ZC836A ZC830) ZC830B) ZC830 ZC830A PDF

    diode J4S

    Abstract: ZC831 ZC834A ZC832A
    Text: SOT23 SILICON VARIABLE CAPACITANCE DIODES ISSUE 4-JU N E 1996 L . ZC830/A/B to -?Q836/ A/B FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low iR Enabling Excellent Phase Noise Performance lR T ypically <200pA at 25V ABSOLUTE MAXIMUM RATINGS.


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    200pA ZC830/A/B 50MHz ZC830) ZC830B) ZC830/A/B ZC836/A/B ZC830 ZC831 ZC832 diode J4S ZC834A ZC832A PDF

    Untitled

    Abstract: No abstract text available
    Text: LS S260-DO y e llo w LY S260-DO GREEN LG S260-DO SUPER-RED/GREEN LU S250-DO SUPER-RED/SUPER-RED LV S260-DO GREEN/GREEN LW S260-DO SIEMENS SUPER-RED SOT23 Surface Mount MULTILED LED Lamp FEATURES • Colored, diffused package - LU: colorless - L.V/LS: red


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    S260-DO S250-DO 18-pln fl535t PDF

    SMD TRANSISTOR L6

    Abstract: transistor SMD Y1 y1 smd transistor SMD TRANSISTOR Y1 1P smd transistor y2 smd transistor resistor smd 103 transistor smd R55 transistor smd j6 L6 smd transistor
    Text: BOM STEVAL-ISS001V2 PART TYPE QUANT ITY QTY DESIGNATOR D3, D4, D5, D6, D7, D8, D9, D10, D11, D12, D13, D14, D15, D16, D17, D18, D19, D20, 22 QTY D21, D22, D23, D24 1 DIODE SMD BAS16 SOT23 2 RESISTOR SMD 1K 1% 0.125W 100PPM OBUD. 0805 5 QTY R26, R37, R38, R154, R155


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    STEVAL-ISS001V2 BAS16 100PPM 330UH 12X9MM UBB-4R-D10T-1 SMD TRANSISTOR L6 transistor SMD Y1 y1 smd transistor SMD TRANSISTOR Y1 1P smd transistor y2 smd transistor resistor smd 103 transistor smd R55 transistor smd j6 L6 smd transistor PDF

    zc840

    Abstract: ZC830 ZC830A ZC830B ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A
    Text: SOT23 'f r HYPERABRUPT TUNER DIODES Pinout : 1-Cathode, 3-Anode N om inal Capacitance at Vr=2V, f=1MHz Reverse Breakdown Voltage Type Capacitance Ratio at f=1MHz C2/C2o Ctot Q at V r =3V f=50MHz Device Code VR V M in pF Typ pF Max pF Min Max Typ ZC830A 25


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    c2/c20 50MHz ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A ZC830) zc840 ZC830 ZC830B PDF

    JST SOT-23

    Abstract: smd transistor l6 smd transistor 2y R135 VARISTOR 103 resistor pack diode zener c55 2Y DIODE SMD DIODE SMD J9 transistor c114 diode zener c72
    Text: BOM STEVAL-ISS001V1 PART TYPE 1 DIODE SMD BAS16 SOT23 2 RESISTOR SMD 1K 1% 0.125W 100PPM PACK. 0805 3 RESISTOR SMD 2K2 1% 0.125W 100PPM PACK. 0805 4 RESISTOR SMD 3K3 1% 0.125W 100PPM PACK. 0805 5 RESISTOR SMD 4K7 1% 0.125W 100PPM PACK. 0805 6 RESISTOR SMD 10K 1% 0.125W 100PPM PACK. 0805


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    STEVAL-ISS001V1 BAS16 100PPM JST SOT-23 smd transistor l6 smd transistor 2y R135 VARISTOR 103 resistor pack diode zener c55 2Y DIODE SMD DIODE SMD J9 transistor c114 diode zener c72 PDF

    ZC830B

    Abstract: zc840 ZC830 ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A
    Text: SOT23 #• HYPERABRUPT TUNER DIODES Pinout : 1-Cathode, 3-Anode N om inal Capacitance at V r = 2 V , f=1MHz Reverse Breakdown Voltage Type Capacitance Ratio at f=1MHz C2/C2o Ctot Q at V r =3V f=50MHz Device Code VR V M in Typ pF Max pF Min Max Typ pF 25 9.0


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    c2/c20 50MHz ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A ZC830) ZC830B zc840 ZC830 PDF

    transistor SOT23 J6

    Abstract: transistor S9014 S9014 SOT-23 j6 sot23 J6 transistor j6 transistor sot-23 SOT-23 j6 transistor npn s9014 S9014 J6 J6 SOT 23
    Text: S9014 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Complementary to S9015 MARKING: J6 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


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    S9014 OT-23 OT-23 S9015 30MHz transistor SOT23 J6 transistor S9014 S9014 SOT-23 j6 sot23 J6 transistor j6 transistor sot-23 SOT-23 j6 transistor npn s9014 S9014 J6 J6 SOT 23 PDF

    transistor SOT23 J6

    Abstract: S9014 SOT-23 transistor S9014 S9014 S9014 sot-23 J6 s9014 equivalent marking J6 s9015 SOT23 transistor j6 sot23 S9014 J6
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


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    OT-23 S9014 OT-23 S9015 30MHz transistor SOT23 J6 S9014 SOT-23 transistor S9014 S9014 S9014 sot-23 J6 s9014 equivalent marking J6 s9015 SOT23 transistor j6 sot23 S9014 J6 PDF

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    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


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    OT-23 S9014 OT-23 S9015 30MHz PDF

    S9014

    Abstract: transistor SOT23 J6
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


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    OT-23 S9014 OT-23 S9015 30MHz S9014 transistor SOT23 J6 PDF

    HC49SMT

    Abstract: HC49-SMT HC49-SMT 12.288MHz LD1117AS33 8x2 connector header female Header 2x1 package HEADER 5X1 R36 SOT223 5x2 connector header SMD HEADER 5X2
    Text: PROJECT NAME: STEVAL-CCA035V1 November 10, 2011 BILL OF MATERIALS Item Quantity Reference Part / Value TECNOLOGY information 1 1 1 1 1 1 1 1 1 1 3 1 1 5 1 1 1 U1 U2 U3 U4 U5 U6 D1 D2 D3 L1 L2 L3 Y1 Y2 J2 J3 J4 J7 J12 J5 J6 J9 STG719 FT2232D STA120DJ


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    STEVAL-CCA035V1 STG719 FT2232D STA120DJ STA529Q LD1117AS33 LD2985B18 600ohm/100MHz 000MHz 288MHz HC49SMT HC49-SMT HC49-SMT 12.288MHz 8x2 connector header female Header 2x1 package HEADER 5X1 R36 SOT223 5x2 connector header SMD HEADER 5X2 PDF

    R315 crystal

    Abstract: sn74f14 smd transistor h5c transistor c413 2062-0000-00 transistor c143 Motorola R347 U31 C205 RN-42 R349
    Text: Yellowknife X4 Bill of Materials 10/7/97 # Board Station BOM file # date : Tuesday October 7, 1997; 11:32:10 ITEM_NUMBER 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 REFERENCE J44 J41 J42 J12 J29 J32 J34 J35 J38 J39 J40 J58 J59 J60 J62 J50


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    16bit, 74F138 PC87308IBNVUL SL82C565 SMD100 SN74ALVCH16501DGG pc87307vul, sl82c565 QFP208, smd100, R315 crystal sn74f14 smd transistor h5c transistor c413 2062-0000-00 transistor c143 Motorola R347 U31 C205 RN-42 R349 PDF

    smd k72 y5

    Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
    Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR


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    1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 smd k72 y5 K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89 PDF

    A09 N03 MOSFET

    Abstract: marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23
    Text: Tiny Part Number Cross Reference Package Marking Model Function Package Description Package Marking Model Function Package Description 0Axx 0Bxx 2A0A 2B0A 2C0A 3A0A 3B0A 3C0A 4A0A 4B0A 4C0A 5A0A 5B0A 5C0A 9Jxx 9Lxx 9Mxx 9Rxx 9Sxx 9Txx 9Zxx A00 A01 A02 A04


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    AD1580-A AD1580-B AD1582-A AD1582-B AD1582-C AD1583-A AD1583-B AD1583-C AD1584-A AD1584-B A09 N03 MOSFET marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23 PDF

    smd j3y

    Abstract: SOT89 MARKING CODE SMD MARKING CODE j3y SOT-23 J3Y j3y smd smd code marking wl sot23 k72 sot-23 marking f5 sot-89 smd 2TY SOT-23 MARKING ka6
    Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices PN# 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR 2SA1162-O


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    1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 smd j3y SOT89 MARKING CODE SMD MARKING CODE j3y SOT-23 J3Y j3y smd smd code marking wl sot23 k72 sot-23 marking f5 sot-89 smd 2TY SOT-23 MARKING ka6 PDF

    MMBD2104

    Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
    Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a


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    BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932 PDF

    MMBD2103

    Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


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    BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N PDF

    SMD Codes

    Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


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    BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 SMD Codes TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101 PDF