PMV45EN
Abstract: TPS40071
Text: NXP SOT23 MOSFET application 8-A POL converter with up to 89% efficiency using SOT23 MOSFETs This small, low-cost design, which combines NXP MOSFETs in SOT23 packages with a PWM controller from Texas Instruments, uses industry-standard construction and operating conditions
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PMV45EN
TPS40071
PMV45EN,
001aae400
PMV45EN
TPS40071
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charging ic laptop motherboard
Abstract: ic laptop motherboard PMV213SN PMV117EN PMV31XN PMV45EN PMV56XN PMV60EN battery controller NXP PMV40UN
Text: NXP 100-, 30-, and 20-V N-channel MOSFETs PMVseries in SOT23 packages Ultra-small µTrenchMOS MOSFETs in a SOT23 package Combining our expertise in package miniaturization and advanced Trench technology, these ultra-small µTrenchMOS™ MOSFETs, housed in tiny SOT23 packages, are an ideal choice for
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MSD995
MSE146
charging ic laptop motherboard
ic laptop motherboard
PMV213SN
PMV117EN
PMV31XN
PMV45EN
PMV56XN
PMV60EN
battery controller
NXP PMV40UN
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Untitled
Abstract: No abstract text available
Text: LM1770 LM1770 Low-Voltage SOT23 Synchronous Buck Controller With No External Compensation Literature Number: SNVS403B LM1770 Low-Voltage SOT23 Synchronous Buck Controller With No External Compensation General Description Features The LM1770 is an efficient synchronous buck switching controller in a tiny SOT23 package. The constant on-time control
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LM1770
LM1770
SNVS403B
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Untitled
Abstract: No abstract text available
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN3306F ISSUE 3 – JANUARY 1996 FEATURES * RDS on = 5Ω * 60 Volt VDS COMPLEMENTARY TYPE PARTMARKING DETAIL - S D ZVP3306F MC G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage
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ZVN3306F
ZVP3306F
800mA
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ZVN3310F
Abstract: SOT23 N-CHANNEL FET 100V ZVP3310F DSA003736 3tf5
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – OCTOBER 1995 FEATURES * 100 Volt VDS * RDS on = 10Ω ✪ COMPLEMENTARY TYPE PARTMARKING DETAIL - ZVP3310F MF ZVN3310F S D G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage
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ZVN3310F
ZVP3310F
ZVN3310F
SOT23 N-CHANNEL FET 100V
ZVP3310F
DSA003736
3tf5
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FET SOT23 60V
Abstract: No abstract text available
Text: Not Recommended for New Design Please Use ZVN3310F BST82 SOT23 N CHANNEL ENHANCEMENT IMODE VERTICAL DMOS FET BST82 IIssue 2 - October 1997 PARTMARKING DETAIL – O2 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain Source Voltage V DS VALUE 80 UNIT
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ZVN3310F
BST82
175mA,
150mA,
FET SOT23 60V
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Untitled
Abstract: No abstract text available
Text: PART OBSOLETE - USE ZVN3310F BST82 SOT23 N CHANNEL ENHANCEMENT IMODE VERTICAL DMOS FET BST82 IIssue 2 - October 1997 PARTMARKING DETAIL – O2 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain Source Voltage V DS VALUE 80 UNIT V Drain Source Voltage
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ZVN3310F
BST82
175mA,
150mA,
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MX SOT23
Abstract: BS250F DSA003678
Text: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS250F ISSUE 3 - JANUARY 1996 S D G PARTMARKING DETAIL MX SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE UNIT -45 V Continuous Drain Current at Tamb=25°C Pulsed Drain Current
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BS250F
MX SOT23
BS250F
DSA003678
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ZVN3306F
Abstract: ZVP3306* datasheet GS 393 ZVP3306F DSA003736 3tf5
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN3306F ISSUE 3 – JANUARY 1996 FEATURES * RDS on = 5Ω * 60 Volt VDS COMPLEMENTARY TYPE PARTMARKING DETAIL - S D ZVP3306F MC G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage
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ZVN3306F
ZVP3306F
800mA
ZVN3306F
ZVP3306* datasheet
GS 393
ZVP3306F
DSA003736
3tf5
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w2s sot23
Abstract: ML SOT23 FET SOT23 60V ZVN3306F ZVP3306F
Text: SOT23 P-CHANNEL ENHANCEMENT ZVP3306F MODE VERTICAL DMOS FET ISSUE 3- JANUARY I L 1996 FEATURES . 60 Volt Vr>s . Ro;, ,=14 2 s D PARTMA13KING DETAIL COMPLEMENTARY - ML G TYPE - ZVN3306F SOT23 ABSOLUTE MAXIMUM _ RATINGS. PARAMETER [Drain — Sc, urce (;ontl~luuus
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ZVP3306F
PARTMA13KING
ZVN3306F
w2s sot23
ML SOT23
FET SOT23 60V
ZVN3306F
ZVP3306F
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Untitled
Abstract: No abstract text available
Text: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET GS -1.0 -10 -8 -6 -0.6 -4 -0.4 ISSUE 3 JANUARY 1996 FEATURES * 60 Volt VDS * RDS on =14Ω D S PARTMARKING DETAIL ML COMPLEMENTARY TYPE ZVN3306F -0.8 D= ZVP3306F G SOT23 ABSOLUTE MAXIMUM RATINGS.
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ZVN3306F
ZVP3306F
-100mA
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Untitled
Abstract: No abstract text available
Text: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS250F ISSUE 3 - JANUARY 1996 S D G PARTMARKING DETAIL MX SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE UNIT -45 V Continuous Drain Current at Tamb=25°C ID -90 mA Pulsed Drain Current
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BS250F
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BSS138TA
Abstract: No abstract text available
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – MARCH 1996 ✪ PARTMARKING DETAIL – SS BSS138 S D G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 50 V Continuous Drain Current at Tamb=25°C ID 200 mA
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BSS138
200mA
100mA
522-BSS138TA
BSS138TA
BSS138TA
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FET SOT23 60V
Abstract: BST82
Text: BST82 SOT23 N CHANNEL ENHANCEMENT IMODE VERTICAL DMOS FET BST82 IIssue 2 - October 1997 PARTMARKING DETAIL – O2 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain Source Voltage V DS VALUE 80 UNIT V Drain Source Voltage non repetitive peak tp ≤ 2ms
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BST82
175mA,
FET SOT23 60V
BST82
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BSS138
Abstract: BSS138 50V Zetex bss138
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – MARCH 1996 ✪ PARTMARKING DETAIL – SS BSS138 S D G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 50 V Continuous Drain Current at Tamb=25°C ID 200 mA
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BSS138
200mA
BSS138
BSS138 50V
Zetex bss138
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BS170F
Abstract: ZVN3306F MV SOT23
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS170F ISSUE 3 - JANUARY 1996 FEATURES * 60Volt VDS * RDS ON = 5Ω S D G PARTMARKING DETAIL – MV SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current
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BS170F
60Volt
200mA
600mA
ZVN3306F
BS170F
MV SOT23
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SOT23 N-CHANNEL FET 100V
Abstract: BSS123 ZVN3310F VDS-100V
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BSS123 ✪ ISSUE 3 – JANUARY 1996 PARTMARKING DETAIL – SA S D G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Drain-Source Voltage VDS 100 Drain-Gate Voltage VDGR 100 V Continuous Drain Current at Tamb=25°C
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BSS123
100mA
280mA
ZVN3310F
SOT23 N-CHANNEL FET 100V
BSS123
VDS-100V
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Untitled
Abstract: No abstract text available
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BSS123 ✪ ISSUE 3 – JANUARY 1996 PARTMARKING DETAIL – SA S D G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V Drain-Gate Voltage VDGR 100 V Continuous Drain Current at Tamb=25°C
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BSS123
100mA
280mA
ZVN3310F
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Untitled
Abstract: No abstract text available
Text: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 -JANUARY 1996 ZVP3306F _ _ FEATURES * 60 V olt V DS * R DS on = 1 4 f l PARTMARKING DETAIL - ML COMPLEMENTARY TYPE - ZVN3306F SOT23 ABSOLUTE MAXIMUM RATINGS. SYMBOL Drain-Source Voltage
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ZVP3306F
ZVN3306F
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zvp3306f
Abstract: No abstract text available
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996_ ZVN3306F _ FEATURES * R D S o n r 5 Q * 60 Volt VDS COMPLEMENTARY TYPE PARTMARKING DETAIL • ZVP3306F G MC SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage
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ZVN3306F
ZVP3306F
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Untitled
Abstract: No abstract text available
Text: SOT23 P-CHANNEL ENHANCEMENT BS250F MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 PARTMARKING DETAIL - M X SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage Continuous Drain Current at Tam^2 5°C VALUE UNIT VDs -45 V *D -90 mA A Pulsed Drain Current
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BS250F
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MF SOT23
Abstract: ZVN3310F partmarking 6 C SOT23 N-CHANNEL FET 100V
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - OCTOBER 1995 ZVN3310F O_ FEATURES * 100 Volt VDS * RDS oni=10“ CO M PLEM ENTARY TYPE • ZVP3310F PARTMARKING DETAIL - MF SOT23 ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Continuous Drain Current at T amtj=25°C
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ZVN3310F
ZVP3310F
300jis.
MF SOT23
ZVN3310F
partmarking 6 C
SOT23 N-CHANNEL FET 100V
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Untitled
Abstract: No abstract text available
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 BSS123 O PARTMARKING DETAIL -S A u SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS 100 V V DGR 100 V Drain-Gate Voltage VALUE Continuous Drain Current at Tam f=2!i°C
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BSS123
100mA
100mA
280mA
300ns.
ZVN3310F
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dm SOT23
Abstract: No abstract text available
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - DECEMBER 1995 O_ FEATURES os * 200 V o lt V, * R,DSion ,= 25Q PARTM ARKING DETAIL - M U SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER VALUE SYM BO L D ra in -S o u rce V o lta g e
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