SOT23 2N7002 Search Results

marking 702 sot23

Abstract: 702 sot23 SP SOT23 ON5258 marking code 10 sot23 marking code p12 sot23 MARKING CODE 13 SOT23 Philips SOT23 code marking ON5257 marking code 702 SOT23
Contextual Info: New Marking Codes SOT23 New Marking Codes SOT23 SOT23 Types from Hamburg, Hazel Grove and Nijmegen without a vendor code will be changed in their marking to a two digit product code and a one digit vendor code. The vendor code indicates the location of the assembly,

DSS SOT23

Abstract: 2N7002
Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET 2N7002 ISSUE 3 – JANUARY 1996 FEATURES * 60 Volt VCEO S D PARTMARKING DETAIL – 702 G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb=25°C

2N7002

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET 2N7002 ISSUE 4 – APRIL 2006 FEATURES * 60 Volt VCEO S D PARTMARKING DETAIL – 702 G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb=25°C

2n7000

Abstract: 2N7002 MARKING 2N7000 MOSFET STO-23 2N7002 st 2N7000G ST2N 2N7002 low vgs mosfet to-92 2N7002 di
Contextual Info: 2N7000 2N7002 N-CHANNEL 60V - 1.8Ω - 0.35A SOT23-3L - TO-92 STripFET II MOSFET TYPE VDSS RDS on ID 60 V 60 V < 5 Ω (@ 10V) < 5 Ω (@ 10V) 0.35 A 0.20 A 2N7000 2N7002 2 TYPICAL RDS(on) = 1.8Ω @10V LOW Qg LOW THRESHOLD DRIVE 3 1 SOT23-3L DESCRIPTION

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET 2N7002 ISSUE 3 - JANUARY 1996 FEATURES * 60 V olt VCE0 MK. e ÌB L g PARTMARKING DETAIL-7 0 2 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V Ds VALUE 60 V C ontinuous Drain Current at Tam|j=25°C

Contextual Info: 2N7000 2N7002 N-CHANNEL 60V - 1.8Ω - 0.35A SOT23-3L - TO-92 STripFET II MOSFET TYPE VDSS RDS on ID 60 V 60 V < 5 Ω (@ 10V) < 5 Ω (@ 10V) 0.35 A 0.20 A 2N7000 2N7002 2 TYPICAL RDS(on) = 1.8Ω @10V LOW Qg LOW THRESHOLD DRIVE 3 1 SOT23-3L DESCRIPTION

ST2N

Abstract: 2n7000 equivalents 2N7002 2n7000 2N7002 MARKING 2N7000G JESD97
Contextual Info: 2N7000 2N7002 N-channel 60V - 1.8Ω - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET Features Type VDSS RDS on ID 2N7000 60V <5Ω (@10V) 0.35 2N7002 60V <5Ω (@10V) 0.20 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Application ■ Switching applications

2N7000 MOSFET

Abstract: 2n7000 equivalents 2N7000 2N7002 MARKING 2n7000 equivalent 2N7000G 2N7002 JESD97
Contextual Info: 2N7000 2N7002 N-channel 60V - 1.8Ω - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET General features Type VDSS RDS on ID 2N7000 60V <5Ω (@10V) 0.35 2N7002 60V <5Ω (@10V) 0.20 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Description This MOSFET is the second generation of

marking BS SOT23

Abstract: 2N7000 circuits
Contextual Info: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS on max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A 3 ) s ( ct 2 1 • Low Qg ■ Low threshold drive SOT23-3L Application

ST2N transistor

Abstract: 2N7000 ST2N 2N7002 st2n codes marking st2n low vgs mosfet to-92 transistor ST2N 2N7000 MOSFET 2N7002 JESD97
Contextual Info: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS on max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Application

ST2N

Abstract: 2N7002 2N7000 ST2N transistor 2n7000 equivalents 2n7000 equivalent 2N7002 MARKING DSS SOT23 2N7000G JESD97
Contextual Info: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS on max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Application

2N7002 SOT23

Abstract: ST2N transistor 2N7002 ST2N 2N7000 codes marking st2n 2N7002 MARKING marking L2 SOT23 6 2N7002- SOT23 MOSFET codes marking 2N7002
Contextual Info: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS on max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Application

2N7002 Philips

Abstract: 03aa03 philips 2n7002
Contextual Info: 2N7002 N-channel enhancement mode field-effect transistor Rev. 03 — 27 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: 2N7002 in SOT23.

2N7002F

Abstract: SP SOT23 2N7002* application
Contextual Info: 2N7002F TrenchMOS Logic Level FET Rev. 01 — 11 February 2002 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: 2N7002F in SOT23. 2. Features

smd transistor w J 3 58

Abstract: transistor SMD 104
Contextual Info: Philips Semiconductors Product specification N-channel vertical D-MOS transistor 2N7002 QUICK REFERENCE DATA FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT23

2N7002BK

Abstract: 771-2N7002BK215 trench relay
Contextual Info: 2N7002BK 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

smd code marking WV

Abstract: nxp p mosfet 2N7002P
Contextual Info: 2N7002P 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 — 19 April 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

Contextual Info: 2N7002BK 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

2N7002BK

Abstract: smd code marking WV
Contextual Info: 2N7002BK 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

Contextual Info: DATE: 14th June, 2010 PCN #: 2000 Revision 01 PCN Title: Additional Assembly Location AUK Dalian, China for SOT23 Package Dear Customer: This is an announcement of change(s) to products that are currently being

2N7002 SOT23

Abstract: marking 702 sot23 2N7002 MARKING design ideas 2N7002 TS16949 MARKING 702
Contextual Info: 2N7002 60V SOT23 N-channel enhancement mode MOSFET Summary RDS on (⍀) ID (A) 7.5 @ VGS= 10V 0.5 7.5 @ VGS= 5V 0.05 V(BR)DSS 60 Description A small signal MOSFET for general purpose switching applications. Features D • Fast switching speed • Low gate drive capability

2N7002P

Abstract: MOSFET TRANSISTOR SMD MARKING CODE A1 Silicon N-Channel Junction FET sot23 smd code marking WV SMD mosfet MARKING code TJ transistor smd code marking nc
Contextual Info: 2N7002P 60 V, 360 mA N-channel Trench MOSFET Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

2N7002C

Abstract: 2N7002CK MOSFET TRANSISTOR SMD MARKING CODE A1 smd code marking WV SMD mosfet MARKING code TJ 017aaa000
Contextual Info: 2N7002CK 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 — 11 September 2009 Product data sheet 1. Product profile 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

Contextual Info: 2N7002P 60 V, 360 mA N-channel Trench MOSFET Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET