transistor bu508af
Abstract: bu508af philips
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use in horizontal deflection circuits of colour television receivers.
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BU508AF
OT199
OT199
transistor bu508af
bu508af philips
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41ba
Abstract: BUW13AF BUW13F UBC098 sot199
Text: Product specification Philips Semiconductors BUW13F; BUW13AF Silicon diffused power transistors High-voltage, high-speed, glass-passivated npn power transistor in a SOT199 envelope intended fo r use in converters, inverters, switching regulators, motor control systems, etc.
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BUW13F;
BUW13AF
OT199
BUW13F
711002b
71ilGÃ
41ba
BUW13AF
BUW13F
UBC098
sot199
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Untitled
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL SLE J> • 711DÛ2b GCm33SG 4b2 « P H I N Philips Components BDV64F/64AF/64BF/64CF r"33"^ Data sheet status Product specification date of issue December 1990 PNP Silicon Darlington power transistors DESCRIPTION PINNING - SOT199 PIN 1
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GCm33SG
BDV64F/64AF/64BF/64CF
OT199
BDV65F/
65AF/65BF/65CF.
BDV64F
BDV64AF
BDV64BF
BDV64CF
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b^E D • bb53T31 0D2BEB7 b23 I IAPX L BU705F BU705DF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed switching npn power transistors in a SOT199 envelope intended fo r use in horizontal deflection circuits o f television receivers. The BU705DF has an integrated efficiency diode.
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bb53T31
BU705F
BU705DF
OT199
BU705DF
BU705DF)
7Z62340
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Untitled
Abstract: No abstract text available
Text: Philips Components BDV66AF/66BF/66CF/66DF D a ta s h e e t statu s Product specification d a te of issue December 1990 PNP Darlington power transistors PINNING - SOT199 DESCRIPTION PIN 1 2 3 PNP epitaxial base Darlington transistors for audio output stages
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BDV66AF/66BF/66CF/66DF
OT199
BDV67AF/67BF/67CF/67DF.
BDV66AF
BDV66BF
BDV66CF
BDV66DF
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bs33
Abstract: BDV67CF ZH09 BDV67AF BDV67BF BDV67DF NPN POWER DARLINGTON TRANSISTORS
Text: Philips Components BDV67AF/67BF/67CF/67DF Data sheet status Product specification date of Issue December 1990 NPN Darlington power transistors PINNING - SOT199 DESCRIPTION DESCRIPTION PIN N P N epitaxial ba se Darlington transistors for au dio output stages
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BDV67AF/67BF/67CF/67DF
BDV66AF/66BF/66CF/66DF.
OT199
BDV67AF
BDV67BF
BDV67CF
BDV67DF
bs33
ZH09
NPN POWER DARLINGTON TRANSISTORS
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DX GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency diode, primarily Tor use in horizontal deflection circuits of colour television receivers.
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BU508DX
OT199
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10LC1
Abstract: BUV90F CAR IGNITION
Text: Philips Semiconductors Product specification Silicon Diffused Darlington Power Transistor BUV90F GENERAL DESCRIPTION High-voltage, monolithic npn power Darlington transistor in a SOT199 envelope intended for use in car ignition systems, DC and AC motor controls, solenoid drivers, etc.
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BUV90F
OT199
OT199
10LC1
BUV90F
CAR IGNITION
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon diffused power transistors BUW13F; BUW13AF DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT199 package. o APPLICATIONS • Converters • Inverters nn • Switching regulators
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OT199
BUW13F;
BUW13AF
MSB012
OT199)
BUW13F
BUW13AF
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bu508df
Abstract: IBM REV 2.8 all ic data BU508DF equivalent all ic datasheet in one pdf file curve tracer BU508AD
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers.
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BU508DF
OT199
OT199
bu508df
IBM REV 2.8
all ic data
BU508DF equivalent
all ic datasheet in one pdf file
curve tracer
BU508AD
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E D • bb53T31 0026555 6bl ■ APX BUW13F BUW13AF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT199 envelope intended fo r use in converters, inverters, switching regulators, m otor control systems, etc.
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bb53T31
BUW13F
BUW13AF
OT199
00Sfl5b2
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BU508AF equivalent
Abstract: transistor bu508af transistor bu508af equivalent transistor BU508AF Data- sheet bu508af datasheet curve tracer all ic datasheet in one pdf file IBM REV 2.8 transistor fall time BU508AD
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use in horizontal deflection circuits of colour television receivers.
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Original
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BU508AF
OT199
OT199
BU508AF equivalent
transistor bu508af
transistor bu508af equivalent
transistor BU508AF Data- sheet
bu508af datasheet
curve tracer
all ic datasheet in one pdf file
IBM REV 2.8
transistor fall time
BU508AD
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711D
Abstract: No abstract text available
Text: PHILIPS INT ER NATIONAL Philips Components • 711002b 00M33bû bT2 « P H I N BDV65F/65AF/65BF/65CF Data sheet status SbE ]> Product specification NPN Silicon Darlington power transistors date of issue December 1990 PINNING - SOT199 DESCRIPTION PIN 1 2 3
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711002b
00M33bû
BDV65F/65AF/65BF/65CF
OT199
T-33-2«
BDV64F/
64AF/64BF/64CF.
BDV65F
BDV65AF
BDV65BF
711D
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UBC013
Abstract: buw12af BUW12F BUW12A
Text: Philips Semiconductors Product specification Silicon diffused power transistors BUW12F; BUW12AF High-voltage, high-speed, glass-passivated npn power transistor in a SOT199 envelope intended fo r use in converters, inverters, switching regulators, m otor control systems, etc.
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BUW12F;
BUW12AF
OT199
BUW12F
711002b
UBC013
buw12af
BUW12A
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Untitled
Abstract: No abstract text available
Text: MOUNTING AND SOLDERING INSTRUCTIONS page TO126/SOT82 768 SOT186/A; SOT78 T0220AB 772 SOT199/SOT429 (TC>247)/SOT339 (TOP3D) 776 Philips Semiconductors Power Bipolar Transistors Mounting and Soldering GENERAL DATA AND INSTRUCTIONS FOR T0126/S0T82 When the driven nut or screw is in direct contact with a
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O126/SOT82
OT186/A;
T0220AB)
OT199/SOT429
/SOT339
T0126/S0T82
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12nfb
Abstract: bu508af philips
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use in horizontal deflection circuits of colour television receivers.
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BU508AF
OT199
16k--
12nfb
bu508af philips
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BU508DF
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers.
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Original
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BU508DF
OT199
OT199
BU508DF
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Untitled
Abstract: No abstract text available
Text: PH I L I P S SbE D INTERNATIONAL 711002b 0043304 Ö4S H P H I N Philips Components BDV66AF/66BF/66CF/66DF Data sheet status Product specification date of issue December 1990 PNP Darlington power transistors 7^ 3 3 - 3 / PINNING - SOT199 D ESCRIPTIO N PIN 1
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711002b
BDV66AF/66BF/66CF/66DF
BDV67AF/67BF/67CF/67DF.
OT199
BDV66AF
BDV66BF
BDV66CF
BDV66DF
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Untitled
Abstract: No abstract text available
Text: N AP1ER PHILIPS/DISCRETE b'lE D bbS3*131 002633^ blT I IAPX BUW12F BUW12AF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT199 envelope intended fo r use in converters, inverters, switching regulators, m otor control systems, etc.
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BUW12F
BUW12AF
OT199
bbS3R31
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Untitled
Abstract: No abstract text available
Text: Philips Component* BDV64F/64AF/64BF/64CF Datasheet status Product specification PNP silicon Darlington power transistors date of issue December 1990 PINNING - SOT199 DESCRIPTION PIN 1 2 3 PNP epitaxial base transistors in a m onolithic Darlington circu it fo r
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BDV64F/64AF/64BF/64CF
OT199
BDV65F/
65AF/65BF/65CF.
BDV64F
BDV64AF
BDV64BF
BDV64CF
bb53c
0034A00
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BDV65CF
Abstract: No abstract text available
Text: Philips Com ponents BDV65F/65AF/65BF/65CF D a ta s h e e t statu s Product specification d a te o f issue December 1990 NPN silicon Darlington power transistors PINNING - SOT199 DESCRIPTION PIN NPN epitaxial base transistors in a monolithic Darlington circuit for
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BDV65F/65AF/65BF/65CF
OT199
BDV64F/
64AF/64BF/64CF.
bbS3T31
0D3MA16
S0T199.
BDV65CF
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bu508df
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b=lE D bbS3T31 0D2fl2?D 325 IAPX BU508AF BU508DF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed switching npn transistors in a fu lly isolated SOT199 envelope w ith integrated efficiency diode fo r the BU508DF , prim arily intended fo r use in horizontal deflection
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bbS3T31
BU508AF
BU508DF
OT199
BU508DF)
bu508df
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ba7 transistor
Abstract: BUV90F lg system ic
Text: Product specification Philips Semiconductors Silicon Diffused Darlington Power Transistor BUV90F GENERAL DESCRIPTION High-voltage, monolithic npn power Darlington transistor in a SOT199 envelope intended for use in car ignition systems, DC and AC motor controls, solenoid drivers, etc.
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BUV90F
OT199
ThsS25
711DflBb
OT199;
711Gfl2b
00777b0
ba7 transistor
BUV90F
lg system ic
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Untitled
Abstract: No abstract text available
Text: [ I b b S S ^ l 0013701 T BUP23BF BUP23CF DEVELOPMENT DATA This data sheet contains advance Information and specifications are subject to change without notice. ;_ / N AUER PHILIPS/DISCRETE 25E D Y '3 3 - U SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT199 envelope intended fo r
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BUP23BF
BUP23CF
OT199
T-33-n
bb53T31
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