RF Wideband Transistors
Abstract: No abstract text available
Text: PACKAGE OUTLINES Package SOT23 SOT54 SOT54variant SOT89 SOT122A SOT143B SOT143R SOT172A1 SOT172A2 SOT223 SOT323 SOT343N SOT343R SOT353 SOT363 Surface-mount yes no no yes no yes yes no no yes yes yes yes yes yes Page . . . . . . . .
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OT54variant
OT122A
OT143B
OT143R
OT172A1
OT172A2
OT223
OT323
OT343N
OT343R
RF Wideband Transistors
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sot172a2
Abstract: No abstract text available
Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline Studded ceramic package; 4 leads SOT172A2 D A Q A D1 c M N W w1 M A M D2 N3 M1 X H detail X b 4 b1 H 1 3 2 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions
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OT172A2
sot172a2
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Untitled
Abstract: No abstract text available
Text: Package outline Studded ceramic package; 4 leads SOT172A1 D A Q A D1 c M N W w1 M A M D2 N3 M1 X detail X H b 4 b1 H 1 3 2 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b b1 c D D1 D2 H M M1 N N3 Q mm
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OT172A1
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Untitled
Abstract: No abstract text available
Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline Studded ceramic package; 4 leads SOT172A1 D A Q A D1 c M N W w1 M A M D2 N3 M1 X detail X H b 4 b1 H 1 3 2 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions
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OT172A1
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Untitled
Abstract: No abstract text available
Text: Package outline Studded ceramic package; 4 leads SOT172A2 D A Q A D1 c M N W w1 M A M D2 N3 M1 X H detail X b 4 b1 H 1 3 2 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b b1 c D D1 D2 H M M1 N N3 Q mm
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OT172A2
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RF Wideband Transistors
Abstract: MS-012AA
Text: PACKAGE OUTLINES Package SOT23 SOT54 SOT89 SOT96-1 SOT122A SOT122D SOT122E SOT143B SOT143R SOT172A1 SOT172A2 SOT223 SOT323 SOT343N SOT343R SOT353 SOT363 SOT551A Surface-mount yes no yes yes no no no yes yes no no yes yes yes yes yes yes yes Page . .
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OT96-1
OT122A
OT122D
OT122E
OT143B
OT143R
OT172A1
OT172A2
OT223
OT323
RF Wideband Transistors
MS-012AA
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AgCu28
Abstract: No abstract text available
Text: CHAPTER 7 ENVIRONMENTAL INFORMATION page Introduction 7-2 Explanation of the tables 7-2 General safety remarks 7-5 Substances not used by Philips Semiconductors 7-6 Disposal and recycling 7-7 General warnings 7-7 Chemical content tables: Diodes Transistors
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SC-74
OT457
representiveSOT23
FeNi42
SnPb20
AgCu28
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Philips FA 291
Abstract: Microwave PIN diode spice BFQ621 DIN45004B
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ621 NPN 7 GHz wideband transistor Product specification Supersedes data of 1995 Apr 11 File under Discrete Semiconductors, SC14 1995 Sep 26 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ621
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BFQ621
OT172A2
Philips FA 291
Microwave PIN diode spice
BFQ621
DIN45004B
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RF Power Transistors
Abstract: sot172a MM 4054 mba512 sot123 FO-83A philips rf transistors sot172 sot268
Text: DISCRETE SEMICONDUCTORS DATA SHEET Package outlines RF Power Transistors for UHF 1996 Feb 20 File under Discrete Semiconductors, SC08b Philips Semiconductors RF Power Transistors for UHF Package outlines 8.0 0.1 Al 2 O3 0.125 seating plane 3 BeO 5.30 max 4.0
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SC08b
MBC887
FO-45.
OT96-1
076E03S
MS-012AA
RF Power Transistors
sot172a
MM 4054
mba512
sot123
FO-83A
philips rf transistors
sot172
sot268
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Philips fr 153 30
Abstract: BFQ135
Text: Philips Components BFQ135 NPN 1 GHz WIDEBAND TRANSISTOR NPN transistor in a ceramic SOT172A2 package. It is prim arily intended for use in M ATV and microwave amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers etc. Emitter ballasting resistors and application of gold sandwich metallization ensure an optimum
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OT172A2
Philips fr 153 30
BFQ135
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BFQ254
Abstract: BFQ234 UBB692 sot172a3
Text: Product specification Philips Semiconductors r- 7 ^ 3 S " / 7 BFQ254; BFQ254/I PNP 1 GHz video transistor PHILIPS 7110fi2ti D045b3D ITI B I P H I N SbE » INTERNATIONAL PINNING DESCRIPTION PNP silicon epitaxial transistor in SOT172A1 and SOT172A3 envelopes,
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33-/Z
BFQ254;
BFQ254/I
711062b
D045b3D
OT172A1
OT172A3
BFQ254
OT172A1)
BFQ254/I
BFQ234
UBB692
sot172a3
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Untitled
Abstract: No abstract text available
Text: P h ilip ^ e m ic o n d u c to r^ ^ ^ • b b 5 3 T 31 Q0 3 1 b b 5 1ST H i APX Product specification NPN 6.5 GHz wideband transistor ^ — DESCRIPTION BFQ135 N AMER PHILIPS/DISCRETE bTE D PINNING NPN transistor in a 4-lead dual-emitter SOT172A1 envelope with a ceramic cap. All leads are
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BFQ135
OT172A1
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Untitled
Abstract: No abstract text available
Text: ^ 5 3 ^ 3 1 0031741 bTb Philips Semiconductors PNP 1 GHz video transistor APX Product specification BFQ254; BFQ254/I N AUER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING PNP silicon epitaxial transistor in SOT172A1 and SOT172A3 envelopes, with emitter-ballasting resistors and
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BFQ254;
BFQ254/I
OT172A1
OT172A3
BFQ254
bbS3T31
MB3693
MEA335
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motorola transistor 5331
Abstract: BFQ254 BFQ234
Text: Philips Semiconductors bb53^31 Q031741 bTb HAPX PNP 1 GHz video transistor Product specification BFQ254; BFQ254/1 N AUER PHILIPS/DISCRETE DESCRIPTION b=JE D PINNING PNP silicon epitaxial transistor in SOT172A1 and SOT172A3 envelopes, with emitter-ballasting resistors and
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00317m
BFQ254;
BFQ254/1
OT172A1
OT172A3
BFQ254
OT172A1)
BFQ254/I
0Q3174M
motorola transistor 5331
BFQ234
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BFQ268
Abstract: No abstract text available
Text: Philips Semiconductors_ ,—. 7^ 3 3 - 0 5 - NPN 1 GHz video transistor PH ILIPS INTERNATIONAL DESCRIPTION Product specification - BFQ268; BFQ268/1 5bE D • 7 1 1 D flP b OOMShS? 344 « P H I N PINNING NPN silicon epitaxial transistor with
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BFQ268;
BFQ268/1
711002t)
BFQ268
OT172A1)
BFQ268/I
OT172A3
BFQ268/I
004SbbD
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BFQ291
Abstract: BFQ290
Text: Philips Semiconductors Preliminary specification NPN HDTV video transistor PHILIPS INTERNATIONAL FEATURES • BFQ291 5bE D 7110fl2Li 0 D4 5b 7 4 423 H P H I N PINNING PIN High breakdown voltages DESCRIPTION • Low output capacitance 1 collector • 2 High gain bandwidth product
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33-oS
BFQ291
BFQ290.
BFQ291
OT172A1
00M5b74
MBC869
OT172A1.
BFQ290
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors • b b S 3 T 31 D D 3 1 ? b fi 64T ■ NPN 1 GHz video transistor ^ i i — DESCRIPTION A P X ^^^Productspecification BFQ268; BFQ268/I ■ N AMER PHILIPS/DISCRETE b'lE D - PINNING NPN silicon epitaxial transistor with emitter-ballasting resistors and a
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BFQ268;
BFQ268/I
BFQ268
UB8670
DD31771
LA123-
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BFQ290
Abstract: BFQ291
Text: Philips Semiconductors • bbSBTBl DD317Ô4 T T 1 ■ ! A P X ^ l^ 2!Ì2ÌÌ22il2E 2£ÌÌÌ£2ÌÌ^ PNP HDTV video transistor BFQ290 N AnER PHILIPS/DISCRETE b^E D PINNING FEATURES 4 DESCRIPTION PIN • High breakdown voltages • Low output capacitance 1
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DD317Ã
BFQ290
BFQ291.
BFQ290
OT172A1
M8C369
OT172A1.
BFQ291
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D02fc
Abstract: transistor 7806 2454 transistor 72A2 BFQ621 DIN45004B Philips FA 145 BFQ6
Text: Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ621 FEATURES DESCRIPTION • High power gain Silicon NPN transistor in a 4-lead dual-emitter SOT 172A2 package with a ceramic cap. All leads are isolated from the mounting base. Emitter ballasting resistors and application
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BFQ621
D02fc
transistor 7806
2454 transistor
72A2
BFQ621
DIN45004B
Philips FA 145
BFQ6
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BFQ741
Abstract: No abstract text available
Text: Objective specification Philips Semiconductors ' '3 3 -Q5 NPN 7 GHz wideband transistor PH IL IP S I N T E R N A T I O N A L FEATURES 5L.E D • BFQ741 711GflEb ODMSbflO 727 ■ P H I N PINNING DESCRIPTION PIN • Low distortion • Gold metallization ensures
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BFQ741
7110A5b
OT172
OT172A1
OT172A1.
BFQ741
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BFQ290
Abstract: BFQ291
Text: Prelim inary specification P hilips Sem iconductors -3 3 -S 7 PNP HDTV video transistor PH IL I P S I N T E R N A T I O N A L SbE ]> BFQ290 711Dfl2h 00 45 b7 3 5T7 PINNING FEATURES DESCRIPTION PIN • High breakdown voltages • Low output capacitance 1 collector
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-33-s
BFQ290
711Dfl2h
0045b73
BFQ291.
BFQ290
OT172A1
MBC869
OT172A1.
BFQ291
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transistor f6 13003
Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.
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SC08b
transistor f6 13003
equivalent transistor bj 131-6
transistor Eb 13003 BM
BB112
smd TRANSISTOR code marking 2F 6n
a1211 lg
CQY58
BU705
TRANSISTOR 131-6 BJ 026
philips om350
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100-C
Abstract: BFQ290 BFQ291
Text: PMlips_Semiconductors jB t a b S B 'I B l 0 0 3 1 7 fl5 T2fl IHAPX Pre,iminary specification NPN HDTV video transistor — — BFQ291 — N AMER PHILIPS/DISCRETE FEATURES t.'JE » PINNING • High breakdown voltages • Low output capacitance PIN 1 DESCRIPTION
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tab53131
BFQ291
BFQ290.
BFQ291
OT172A1
100-C.
100ii
OT172A1.
100-C
BFQ290
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BFQ26
Abstract: BFQ268
Text: Philips Components bfq268 _ j \ _ NPN HIGH FREQUENCY HIGH VOLTAGE TRANSISTOR NPN silicon epitaxial transistor w ith em itter ballasting resistors and a gold sandwich metallization to ensure optim um temperature profile and excellent reliability properties. It features high break-down
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bfq268
BFQ26
OT172A1.
8-32UNC
7Z86903
M90-1192/Y
BFQ268
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