SOT123 PACKAGE Search Results

Contextual Info: Concise Catalogue 1996 Philips Semiconductors DISCRETE SEMICONDUCTORS RF power transistors RF & MICROWAVE SEMICONDUCTORS & MODULES RF POWER MOS TRANSISTORS type number PL PEP ^DS (W) (V) G p (dB) package 20.1) 23 20.1) 17 20 SOT123 SOT 123 SOT121 SOT121

BLY93A

Abstract: blw79 SOT123 Package BLW80 BLV11 BFS22A BLY94 BLY93C bly88
Contextual Info: 60 RF/Microwave Devices Bipolar RF Transmitting Transistors VHF 25175M H z Package Outline Type No. Load Power W @ 175MHz Power Gain (dB) @ 175MHz Supply Voltage (V) 0.7 1.5 3 9 8 8.4 9.4 7.4 7.5 7.5 7.5 7.5 1 2 2 4 4 4 4 8 8 8 10 15 15 15 15 25 25 28 30

sot123 package

Abstract: BLF543 BLF221 sot 123 blf246b flange SOT-123
Contextual Info: 65 RF/Microwave Devices RF Power MOS Transistors cont. Type No. Package Outline Load Power (W) V DS (V) f (MHz) Source Gain (dB) 28 28 28 28 28 50 28 28 50 28 50 28 50 28 50 175 175 175 175 175 108 175 108 108 108 108 175 108 175 108 14 typ 13 13 13 14 19 typ

SOT123 Package

Abstract: BLV62 BLW33 BLX98 BLF147 BLF175 SOT-48 bfr96s SOT123
Contextual Info: 64 RF/Microwave Devices Bipolar RF Transmitting Transistors TV Transposers/Transmitters co n t. Type No. Output Power @ djm Package Outline SYNC (W) (dB) Output Power P0 - IdB (W) Power Gain (dB) Supply Voltage (V) 115 225 11 9.0 28 35 10 11 11 6 10 10 5.5

t122 25 3

Abstract: BLW85 t122 25 10 BLW80 BFS22A BFQ42 SOT-120 BFQ43 T122 blw79
Contextual Info: Philips Semiconductors Concise Catalogue 1996 RF & MICROWAVE SEMICONDUCTORS & MODULES DISCRETE SEMICONDUCTORS RF power transistors VHF 25 - 175 MHz BIPOLAR TRANSISTORS type num ber load power @ 175 MHz W power gain @ 175 MHz (dB) supply voltage (V) package

sot123 package

Abstract: sot123 SOT-123 philips blx15 blx13 BLW50F sot122f Blx15 philips BLW96
Contextual Info: Philips Semiconductors Concise Catalogue 1996 RF & MICROWAVE SEMICONDUCTORS & MODULES DISCRETE SEMICONDUCTORS RF power transistors BIPOLAR RF TRANSMITTING TRANSISTORS HF SINGLE SIDEBAND 1.5 - 30 MHz BIPOLAR TRANSISTORS • Very wide range of devices with supply voltages

SOT123 Package

Abstract: SOT123 SOT-123 BFS22A SOT121 Package BFQ43 BFQ43 datasheet BLY93 BLX15 bfq34 application note
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Power Transistors for HF and VHF 1995 Nov 21 File under Discrete Semiconductors, SC08a Philips Semiconductors RF Power Transistors for HF and VHF Selection guide INTRODUCTION The following tables represent our complete range of bipolar and MOS transmitting transistors, grouped according to the

T119 A

Abstract: sot 122 SOT123 Package BLW78
Contextual Info: 63 RF/Microwave Devices Bipolar RF Transmitting Transistors SHF 900 - 960 MHz cont. Load Power (W) @ 900 MHz Power Gain (dB) @ 900 MHz Supply Voltage (V) 35* 50 50* 150(PEP)* 7* 8.5 8.1* 7.5* 24 26 26 26 Package Outline Load Power (W) @ 108 MHz Power Gain

SOT123 Package

Contextual Info: Philips Semiconductors Concise Catalogue 1996 DISCRETE SEMICONDUCTORS RF power transistors RF & MICROWAVE SEMICONDUCTORS & MODULES VHF 25 - 175 MHz BIPOLAR TRANSISTORS continued type number load power @ 175 MHz W power gain @ 175 MHz (dB) supply voltage

PT8828

Abstract: sot123 package KT922G 2SC1239 SGSF324 motorola 2n4932 BLY93A S0122 J03020 2SC2094
Contextual Info: RF POWER SILICON NPN Item Part Number Number I C 5 10 >= 2.5 A, 2SC1398 2S01802 2N4226 2SC2078 2SC1909 2SC3294 2S01724 2S01815 2N3928 2N3929 ~~g~i~4 15 20 S01222-5 2N5642 2SC1306 2SC1306 SK3529 2SC585 2SC636 BLX13 ~t~~~~ 25 30 BlY93A J03020 BlX13C BlW83 BlY93C

b0845

Abstract: B0847 KT922V S01135 MM3724 KT922B SOt123 Package 2N444 2SC2238BO JE8550
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 15 20 >= 30 Inti Device ToshibaCorp Inti Device ToshibaCorp ToshibaCorp ToshibaCorp Hitachi Ltd Matsushita Elec Trans Sanyo Elect ~~~~~~ ~anyo ~Iect B0226 B0228 B0230 B0230 B0230 2SC234 JE9113A JE9113B

Contextual Info: Philips Sem iconductors bt.S3R31 O O E ^ m HT5 W A P X P roduct spe cifica tion VHF power MOS transistor BLF225 — N AUER PHILIPS/DISCRETE FEATURES blE » PIN CONFIGURATION • Easy power control • Good thermal stability • Withstands full load mismatch.

Contextual Info: OOETTBfci MED M l A P X Philips Semiconductors Product specification HF/VHF power MOS transistor BLF242 1 N AMER PHIL IPS/DISCRETE h^E D PIN CONFIGURATION FEATURES • High power gain • Low noise • Easy power control • Good thermal stability • Withstands full load mismatch

2SC3420GR

Abstract: 2SC3420Y 2SC2594 2SC3420-BL sm318 2N5025 2N3625 2SC30740 J50G 2sc2270
Contextual Info: RF POWER SILICON NPN Item Part Number Number I C >= 2.5 A, BLX39 BLW86 2SC1075 VTV075 2SC2799 BLV32F BLV95 (A) S01274 S01274-1 5 I(C) 10 15 20 25 40 45 50 55 60 65 70 75 80 85 90 Ic Max fT V(BR)CEO Po Max (A) (Hz) (V) (W) hFE Min Max ICBO Max tr Max tf Max

SOT123 Package

Abstract: sot123 TRANSISTOR 2X5 BLV12
Contextual Info: P ro d u cT jg je H ica tjo n Philips Semiconductor* BLV12 VHF power transistor FEATURES • Emitter-ballasting resistors lor an optimum temperature profile • Excellent reliability • Withstands full load mismatch. QUICK REFERENCE DATA RF performance a t T^, = 25 °C In a common emitter test circuit.

uA740

Abstract: PHILIPS OQ 2222 SOT123 Package UA740 8 pin capacitor polyester philips 2222 311 capacitor philips International Power Sources philips Trimmer 60 pf sot123 437S
Contextual Info: Product specification Philips Semiconductors BLF225 VHF power MOS transistor PHILIPS INTERNATIONAL 711005b GG437S7 44G M P H I N 5bE » PIN CONFIGURATION FEATURES • Easy power control • Good thermal stability • Withstands full load mismatch. D ESCRIPTIO N

Contextual Info: Philips Sem iconductors b b S 3T 31 OOBT^SB SOT M APX Product specification VH F power MOS transistor BLF245 N AUER PHILIPS/DISCRETE FEATURES b=1E D PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability

SOT123 Package

Abstract: SOT123 BLF244 International Power Sources SOT-123
Contextual Info: Philips Semiconductors Product specification VHF power MOS transistor BLF244 FEATURES • • • • • • 7110ÖEb 0Ü437T5 SMS • PHIN SbE D PHILIPS INTERNATIONAL T-J *?-11 PIN CONFIGURATION High power gain Low noise figure Easy power control Good thermal stability

sot-23 MARKING CODE ZA

Abstract: marking code AD B557 BSS79C BCV72 BCW29 BCW30 BCW31 BFQ31 BFQ31A
Contextual Info: i FERRANTI T II semiconductorsL BSS79B, C NPN Silicon Planar General P urpose S w itc h in g T ra n sistors DESCRIPTION These devices are intended fo r use in sm all and m edium signal a m p lifica tio n ap plication s fro m d.c. to radio frequencies. Encapsulated in the popular SOT-123 package the device is

MPA92

Abstract: 68W* transistor 68w transistor SOT123 Package BLF245 BH RV transistor International Power Sources P101 sot123 GZ22
Contextual Info: Product specification Philips Semiconductora VHF power MOS transistor PHILIPS INTERNATIONAL T 5bE D • - 3 1-11 * BLF245 711GflSb 0043301 3flfl BIPHIN PIN CONFIGURATION FEATURES • High power gain • Low noise figure • Easy power control • Good thermal stability

sot123 package

Abstract: SOT123 philips Trimmer 60 pf BLV12 philips 561
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV12 VHF power transistor Product specification September 1991 Philips Semiconductors Product specification VHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile BLV12 QUICK REFERENCE DATA

philips ferroxcube 4c6

Abstract: ferroxcube toroid philips toroid 4c6 ferroxcube 4C6 toroid core Philips Components, Soft Ferrites Data Handbook M BLF175 ferroxcube 31 toroid core 4C6 toroid Philips Components, Soft Ferrites Data Handbook soft ferrites philips handbook
Contextual Info: APPLICATION NOTE A linear amplifier 1.6 − 28 MHz for 8 W PEP in class-A with the BLF175 NCO8705 Philips Semiconductors A linear amplifier (1.6 − 28 MHz) for 8 W PEP in class-A with the BLF175 CONTENTS 1 SUMMARY 2 INTRODUCTION 3 GENERAL CONSIDERATIONS

BLF244

Abstract: MGP160
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF244 VHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification VHF power MOS transistor FEATURES BLF244 PIN CONFIGURATION • High power gain • Low noise figure • Easy power control

transistor tt 2222

Abstract: TT 2222 enamelled copper wire tables 2222 123 capacitor philips pu enamelled copper wire TL 2222 4312 020 36640 ferroxcube wideband hf choke 22 nF, 63 SOT123 Package
Contextual Info: Philips Semiconductors Product specification HF power MOS transistor PHILIPS T -3 ^ -// INTERNATIONAL FEATURES 5bE D I 711002b DOMBbTM BLF145 437 IPHIN PIN CONFIGURATION • High power gain • Low noise figure • Good thermal stability • Withstands full load mismatch.