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    SOT1227B Search Results

    SOT1227B Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SOT1227B NXP Semiconductors Earless Flanged ceramic package; 2 leads Original PDF

    SOT1227B Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Package outline Earless Flanged ceramic package; 2 leads SOT1227B D A F 3 U1 w1 A B D1 D c w1 A B 1 H E1 U2 E 2 A w2 b B Q w2 5 mm b c D D1 H Q U1 U2 max 3.68 nom min 2.84 1.40 0.15 5.18 5.21 4.17 4.19 1.07 8.64 1.70 5.21 4.19 1.14 0.08 4.98 4.95 3.96 3.94 0.97


    Original     		PDF OT1227B sot1227b

    sot979

    Abstract: No abstract text available
    Text: Ceramic packages for RF Power Transistors SOT975B L x W x H (mm SOT538A (5.5 x 4.1 x 2.2 (mm) SOT1227A (7.1 x 6.9 x 3.3 (mm) SOT975C (7.1 x 6.9 x 3.3 (mm) (14.0 x 4.1 x 2.9 (mm) SOT1227B SOT467B (9.7 x 5.8 x 4.3 (mm) SOT467C (20.3 x 5.8 x 4.3 (mm)


    Original     		PDF OT975B OT538A OT1227A OT975C OT1227B OT467B OT467C OT1228A OT1228B OT608A sot979

    Untitled

    Abstract: No abstract text available
    Text: CLF1G0060-10; CLF1G0060S-10 Broadband RF power GaN HEMT Rev. 3 — 30 May 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-10 and CLF1G0060S-10 are 10 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.


    Original     		PDF CLF1G0060-10; CLF1G0060S-10 CLF1G0060-10 CLF1G0060S-10 1G0060S-10

    ATC 600F

    Abstract: No abstract text available
    Text: CLF1G0060-30; CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 3 — 27 March 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.


    Original     		PDF CLF1G0060-30; CLF1G0060S-30 CLF1G0060-30 CLF1G0060S-30 1G0060S-30 ATC 600F

    PCE3667CT-ND

    Abstract: capacitor 56J pF a 69154 CLF1G0060-30 SOT1227A 200V470
    Text: CLF1G0060-30; CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 1 — 8 October 2012 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.


    Original     		PDF CLF1G0060-30; CLF1G0060S-30 CLF1G0060-30 CLF1G0060S-30 1G0060S-30 PCE3667CT-ND capacitor 56J pF a 69154 SOT1227A 200V470

    SOT1227A

    Abstract: No abstract text available
    Text: CLF1G0060-30; CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 4 — 20 June 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.


    Original     		PDF CLF1G0060-30; CLF1G0060S-30 CLF1G0060-30 CLF1G0060S-30 1G0060S-30 SOT1227A

    BB 509 varicap diode

    Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
    Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: CLF1G0060-30; CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 2 — 29 January 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.


    Original     		PDF CLF1G0060-30; CLF1G0060S-30 CLF1G0060-30 CLF1G0060S-30 1G0060S-30

    sot1227

    Abstract: 082279 SOT1227A Model 284J 226J
    Text: CLF1G0060-10; CLF1G0060S-10 Broadband RF power GaN HEMT Rev. 1 — 8 October 2012 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-10 and CLF1G0060S-10 are 10 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.


    Original     		PDF CLF1G0060-10; CLF1G0060S-10 CLF1G0060-10 CLF1G0060S-10 1G0060S-10 sot1227 082279 SOT1227A Model 284J 226J