SOT-89 MARKING CODE BC Search Results

bcx55-16 marking

Abstract: BCX55-16 BCX56-16 P025H BCX52-16 BCX53-16
Contextual Info: BCX55-16 BCX56-16 SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA • ■ ■ ■ Ordering Code Marking BCX55-16 X55 BCX56-16 X56 SILICON EPITAXIAL PLANAR PNP MEDIUM VOLTAGE TRANSISTORS SOT-89 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING

BCP1898

Contextual Info: BCP1898 1A, 100V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOT-89 The BCP1898 is designed for switching applications. MARKING 4 1 189 8 2 3 A Date Code E

P025H

Abstract: 956 relay BCX53-16 BCX56-16 BCX52-16 BCX55-16 T 1K sot-89
Contextual Info: BCX52-16 BCX53-16 SMALL SIGNAL PNP TRANSISTORS PRELIMINARY DATA • ■ ■ ■ Ordering Code Marking BCX52-16 X52 BCX53-16 X53 SILICON EPITAXIAL PLANAR PNP MEDIUM VOLTAGE TRANSISTORS SOT-89 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING

F MARKING

Contextual Info: BCP5401 PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-89 Features Designed for gereral prupose application requiring high breakdown voltage. 1 2 3 1.BASE 2.COLLECTOR 3.EMITTER REF. A B C D E F Marking:5401 XXXX xxxx = Date Code

5551

Abstract: F MARKING
Contextual Info: BCP5551 NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-89 Features Designed for gereral prupose application requiring high breakdown voltage. 1 2 3 1.BASE 2.COLLECTOR 3.EMITTER REF. A B C D E F Marking: 5551 XXXX xxxx = Date Code

Contextual Info: 2 S B 1188 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SB1188; BC-*, where ★ is hFE code • • • 2SB1188 (MPT3) c -0.1 *0'2 4.5 1. 6 collector power dissipation, Pc = 2 W,

transistor bc 132

Abstract: B1188 BC transistor series
Contextual Info: 2SB1188 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62)package • package marking: 2SB1188; BC^, where ★ is hFE code 2SB1188 (MPT3) • collector power dissipation, P c = 2 W, when mounted on 40 x 40 x 0.7 mm

Contextual Info: 3SE D • û23b3EG GGlb71b G ISIP BCX 68 NPN Silicon AF Transistors SIEMENS/ SP C L i SEMICONDS • • • • • T -^ -2 3 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCX 69 PNP

Contextual Info: NPN Silicon AF Transistors • • • • • BCX68 For general AF applications High collector current High current gain Low collector-em itter saturation voltage Complementary type: BCX 69 PNP Type Marking Ordering code for versions In bulk Ordering code for

Contextual Info: 32E D • 053b32G 001b720 2 « S IP PNP Silicon AF Transistors _ S I E M E N S / • • • • • SPCL-, BCX 69 T ' 2 1 - 2 3 _ SEMICONDS For general AF applications High collector current High current gain Low collector-em ltter saturation voltage

Contextual Info: BCX69 PNP Silicon AF Transistors For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: B C X 68 NPN Type Marking Ordering cod* (or versions In bulk Ordering code for versions on 12 mm-tape

onsemi DEVICE BK

Abstract: 10R1 BCX56 BCX56-10R1 sot-89 body marking C 2 L Y
Contextual Info: BCX56-10R1 Preferred Device NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-89 package, which is designed for medium power surface mount applications.

marking BK

Contextual Info: BCX56-10R1 Preferred Device NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-89 package, which is designed for medium power surface mount applications.

Contextual Info: BCX56-10R1 Preferred Device NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-89 package, which is designed for medium power surface mount applications.

Contextual Info: 32E D • Ô 23 b 3 2 0 QQlbb7Q PNP Silicon Darlington Transistors 2 msip BCV 28 BCV 48 S IE M E N S / SPCL-i SEMICONDS For general AF applications High collector current High current gain Complementary types: BCV 29, BCV 49 NPN Type Marking Ordering code

1SS SOT-23

Abstract: 1SS TRANSISTOR
Contextual Info: TELEFUNKEN ELECTRONIC fllC D a^EDORb 0005275 R • AL6G BF 989 Marked with: M 89 YilLilFlUJNlKIIMl electronic Creative Technologies N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications: Input' and Mixerstages especially for UHFTV-tuners up to 900 MHz

BF 331 TRANSISTORS

Abstract: transistor BC 331 transistor Bf 331 transistor BF 606 on TRANSISTOR BC 187 transistor marking p-6 BC 331 Transistor marking code SJ transistors bc238c
Contextual Info: TELEFUNKEN ELECTRONIC Ö1C T> • Ö ^ O O R b 0005330 2 ■ ALlSG BFX89 TiHitPüUNliKiM] electronic T -sr-sr Creativo Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: General, up to the GHz range Feature»: • Power gain 7 dB Dimensions In mm

TRANSISTOR BI 187

Abstract: sot-23 npn marking code cr TRANSISTOR BC 187 BUV71 bc 187 npn transistor TRANSISTOR BI 237 on BC 187 TRANSISTOR telefunken ta 750 12A3 T0126
Contextual Info: L 1 TELEFUNKEN ELECTRONIC 17E D • ô'téOO'ib 000*5571 0 . BUV71 m S F M IM electronic CrMiiwltchnofogw» T-S3-J3 Silicon NPN Power Transistors Applicâtions: Motor controls, switching mode power supplies Features: • Implantation • High reverse voltage

Contextual Info: 32E D • Ô23b320 ISIP Q Q lb b 7 4 BCV 29 BCV 49 NPN Silicon Darlington Transistors S IE M E N S / • • • • SPCL-, SEM IC O N BS For genera! A F applications High collector current High current gain Complementary types: B C V 28, B C V 48 PNP Type

BC 546 NPN

Abstract: MARKING 7C ICE 47E BCX56-16 BCX54 BCX55 BCX56 BF sot-89 SIEMENS 7L sot-89 Marking code BQ
Contextual Info: 4?E D • ñ23SbGS 002M23Ü ñ ■ S I E G T-33-05 NPN Silicon AF Transistors -• • • • BCX 54 BCX 56 SIEMENS AKTIEN6ESEL LSCH AF - For AF driver and output stages High collector current Low collector-em itter saturation voltage

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. LBC846BDW1T1G

S 566 b

Contextual Info: BCX54 BCX56 NPN Silicon AF Transistors • • • • For AF driver and output stages High collector current Low collector-em itter saturation voltage Complementary types: BCX 51 - BCX 53 PNP Type BCX BCX BCX BCX BCX 54-6 54-10 54-16 55-6 55-10 Marking

Contextual Info: 32E D • Ô 2 3 b 3 2 0 OOlbTOÖ 1 « S I P PNP AF Transistors -f- ^ . ^3 S IE M E N S / SPCL-i SEMICONDS BCX 51 BCX 53 For AF driver and output stages High collector current Low collector-em ltter saturation voltage Complementary types: BCX 5 4 - - B C X 5 6 NPN

marking BCX

Contextual Info: BCX 51 BCX53 PNP AF Transistors • • • • For AF driver and o u tp u t stages High c o lle c to r current Lo w co lle c to r-e m itte r saturation voltage C om plem entary types: BCX 54- - BCX 56 NPN Type BCX BCX BCX BCX BCX 5 1 -6 51-10 51-16 5 2 -6