KTA1298
Abstract: MARKING IY SOT sot-23 IY marking IY
Text: SEMICONDUCTOR KTA1298 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking IY No. 1 Item Marking Device Mark I KTA1298 hFE Grade Y O,Y * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method
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KTA1298
OT-23
KTA1298
MARKING IY SOT
sot-23 IY
marking IY
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Q62702-F979
Abstract: BF599
Text: NPN Silicon RF Transistor ● Common emitter IF/RF amplifier ● Low feedback capacitance due to shield diffusion BF 599 Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) BF 599 NB Q62702-F979 B SOT-23 E C Maximum Ratings Parameter
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Q62702-F979
OT-23
Iy21e
Q62702-F979
BF599
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marking POJ diode
Abstract: MMBV432LTI MARKING YA SOT-23 MMBV432LT1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL Silicon ~ning Order this document by MMBV432LT1/D DATA Diode MMBV432LTI This device is designed for FM tuning, general frequency control and tuning, or any top–of–th+line application requiring back–to–back diode configuration for minimum
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MMBV432LT1/D
MMBV432LTI
OW1-2447
602-2W609
140W77
MMBV432LTl~
marking POJ diode
MMBV432LTI
MARKING YA SOT-23
MMBV432LT1
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA1298 TRANSISTOR PNP SOT–23 FEATURES Low Frequency Power Amplifier Application Power Swithing Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
2SA1298
-100mA
-800mA
-500mA,
-20mA
-10mA,
-10mA
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W609
Abstract: MMBF5459LT1 SIP SOT 23 bergquist ge MARKING ZE SOT-23 KH SOT23
Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MMBF5459LT1/D DATA — JFET Wansistor N-Channel I I I MMBF5459LTI I ? SOURCE G~TE Y 1DRAIN MNIMUM RATINGS Rating Drain-ate Voltage I Symbol Value Unit VDG 25 Vdc 1 THERMAL 1 [ .:?,ti CHARACTERISTICS
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MMBF5459LT1/D
MMBF5459LTI
MMBF5459LT1
W1-2447
2662929B
MMBF5459LTl~
W609
MMBF5459LT1
SIP SOT 23
bergquist ge
MARKING ZE SOT-23
KH SOT23
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MBT3906DWITI
Abstract: MBT390 MBT3946DW1 MBT3946DWI MBT3904DW1 i7050 MBT3906DW1T1 MBT3946DW1T1 MBT3904DWITI
Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MBT3904DWlT1/D DATA — Dual General Purpose Transistors The MBT3904DW1TI, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed
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MBT3904DWlT1/D
MBT3904DW1TI,
MBT3906DW1T1,
MBT3946DW1T1
23/SOT
MBT3904DWI
MBT3906DWI
MBT3946DWI
14WI-247
MBT3906DWITI
MBT390
MBT3946DW1
MBT3904DW1
i7050
MBT3906DW1T1
MBT3946DW1T1
MBT3904DWITI
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pin configuration of ic 7448
Abstract: marking HX 6pin IC+7448+truth+table data sheet IC 7448
Text: Data Sheet PT7M7443-52 µP Supervisory Circuit | |
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PT7M7443-52
PT7M7449
PT0289
pin configuration of ic 7448
marking HX 6pin
IC+7448+truth+table
data sheet IC 7448
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transistor 13003 AD
Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)
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OT-23
KST06
KST05
KSC1623
BCW71
BCX70G
BCX70H
BCX70J
BCX70K
BCX71G
transistor 13003 AD
ksd-180
HF 13003
KSD180
13003 HF
KSD168
KSD966
ksd-168
PNP NPN Transistor VCEO 120V 100V Ic 7A
KSC 1.5k 250v
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diode tfk s 220
Abstract: tfk s 220 diode 12A3 rg4 77 diode tfk s 92 TFK diode tfk 3b tfk transistor Tfk 237 TCA 321
Text: 17E I I B^SDDRb ODD^bS^ 3 • m ilF iy iim iM electronic Crt*tiv«1«chnolo$tt ALGG i l ? ■ TFK 3080 D TELEFUNKEN ELECTRONIC [ Preliminary specifications [ NPN Silicon Tripleton Power Transistor T-33-3£~ Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)
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S1000
O888E
T0126
15A3DIN
diode tfk s 220
tfk s 220
diode 12A3
rg4 77 diode
tfk s 92
TFK diode
tfk 3b
tfk transistor
Tfk 237
TCA 321
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TRANSISTOR BC 814
Abstract: TRANSISTOR "BC 258" transistor BF 257 ci 4580 MARKING CFK CFk10 BC 251 transistor TRANSISTOR BC 256 Telefunken u 257
Text: . TELEFUNKEN ELECTRONIC file D ^•3 m W I M M electronic Creative Technologies ■ a^BOG^b 00053^2 5 /~ZS~ CFK10 N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration; In wireless telephone, broadcast sets, cabel TV and equipments with
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CFK10
569-GS
TRANSISTOR BC 814
TRANSISTOR "BC 258"
transistor BF 257
ci 4580
MARKING CFK
CFk10
BC 251 transistor
TRANSISTOR BC 256
Telefunken u 257
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marking 503
Abstract: SMD MARKING RFC S503T S503TR
Text: Tem ic S503T/S503TR S e m i c o n d u c t o r s MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. M Applications Low noise gain controlled input stages in UHF- and VHFtuner with 5 V supply voltage.
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s503t/s503tr
S503T
22-Oct-97
S503TR
marking 503
SMD MARKING RFC
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Untitled
Abstract: No abstract text available
Text: Tem ic S503T/S503TR Semiconductors MOSMIC for TV-Tùner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit £ Electrostatic sensitive device. Observe precautions for handling. M Applications Low noise gain controlled input stages in UHF- and VHFtuner with 5 V supply voltage.
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S503T/S503TR
S503T
S503TR
D-74025
22-Oct-97
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smd transistor marking MZ
Abstract: A19 SMD transistor smd transistor marking HA smd transistor marking A2 TRANSISTOR AO SMD MARKING S593T S593TR smd uhf transistor marking MZ smd transistor marking j9
Text: Tem ic S593T/S593TR S e m i c o n d u c t o r s MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage M OSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. M Applications VdD Low noise gain controlled input stages in UHF- and VHFtuner with 5 V supply voltage.
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s593t/s593tr
S593T
S593TR
26-Mar-97
smd transistor marking MZ
A19 SMD transistor
smd transistor marking HA
smd transistor marking A2
TRANSISTOR AO SMD MARKING
smd uhf transistor marking MZ
smd transistor marking j9
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SM 3119 N
Abstract: SM 3119 Na smd transistor 637 3210 smd marking
Text: Te m ic S593T/S593TR S e ni i c fi n d u c t o r s MOSMIC for TV-T\iner Prestage with 5 V Supply Voltage M O SM IC - M O S Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. ^ Applications Low noise gain controlled input stages in UHF- and VHFtuner with 5 V supply voltage.
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S593T/S593TR
S593T
S593TR
26-Mar-97
SM 3119 N
SM 3119 Na
smd transistor 637
3210 smd marking
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Untitled
Abstract: No abstract text available
Text: 32E D • 023b3BQ Silicon Low Leakage Diode Array 001bS43 b « S IP T-Ol-OI BAV170 SIEMENS/ SPCLi SEMICON DS _ • Low Leakage applications • Medium speed switching times • Common cathode Type Marking Ordering code 8-mm tape Package BAV170
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023b3BQ
001bS43
BAV170
Q62702-A920
T-01-09
23b32Ã
001b54b
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SMD Transistor W03
Abstract: SMD W03 w03 SMD marking W03 W03 sot 23 S503TRW
Text: Tem ic S503TRW S e m i c o n d u c t o r s MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. M Applications Low noise gain controlled input stages in UHF- and VHFtuner with 5 V supply voltage.
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s503trw
S503TRW
22-Oct-97
SMD Transistor W03
SMD W03
w03 SMD
marking W03
W03 sot 23
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S525T
Abstract: No abstract text available
Text: Temic S525T S e m i c o n d u c t o r s N-Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. ^ “ Applications High frequency stages up to 300 MHz Features • integrated gate protection diode
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S525T
S525T
26-Mar-97
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SMD W03
Abstract: W03 sot 23
Text: Tem ic S503TRW S e m i c o n d u c t o r s MOSMIC for TV-Tùner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit £ Electrostatic sensitive device. Observe precautions for handling. M Applications Low noise gain controlled input stages in UHF- and VHFtuner with 5 V supply voltage.
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S503TRW
S503TRW
D-74025
22-Oct-97
SMD W03
W03 sot 23
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L25B
Abstract: l31a L28B
Text: tß Semiconductor LP2980 Micropower SOT, 50 mA Ultra Low-Dropout Regulator General Description Features The LP2980 is a 50 mA, 1ixed-output voltage regulator de signed specifically to meet the requirements ot battery-powered applications. • ■ ■ ■
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LP2980
OT-23
L25B
l31a
L28B
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marking JT
Abstract: No abstract text available
Text: tß Semiconductor LP2982 Micropower SOT, 50 mA Ultra Low-Dropout Regulator General Description Features The LP2982 is a 50 mA, 1ixed-output voltage regulator de signed to provide ultra low dropout and lower noise in battery powered applications. • ■
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LP2982
marking JT
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fci dh 22
Abstract: smd transistor 637 S593TRW smd transistor marking HA TRANSISTOR AO SMD MARKING Temic Semiconductors TELEFUNKEN 862
Text: Tem ic S593TRW S e m i c o n d u c t o r s MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage M O SM IC - M O S M onolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF- and VHFtuner with 5 V supply voltage.
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s593trw
S593TRW
-Oct-97
22-Oct-97
fci dh 22
smd transistor 637
smd transistor marking HA
TRANSISTOR AO SMD MARKING
Temic Semiconductors
TELEFUNKEN 862
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TRANSISTOR 2N338
Abstract: 2N338 2N337 SFWM marking YJ AM 2N3384 2N338 JAN zn338 2 TMT 15-4
Text: iiU M 'U 'ivuw / gva ¿2 H o v te ttr 1971 SUPERSEDING _ Û1LL.-0-lÖÖÖO/ÖWD 4 Mafflh tOM MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSBTOR, NPN, SILICON, LOW-POWER TYPES 2N337 AND 2N338 This specification la mandatory for use bv all Departmeats and Agencies of the Department of Defense.
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-8-19500/69K
MIL-S-19500/89D
2N337
2N338
MEL-8-19500,
MEL-S-19500
TRANSISTOR 2N338
2N338
SFWM
marking YJ AM
2N3384
2N338 JAN
zn338
2 TMT 15-4
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SMD transistor Marking 1Ss
Abstract: telefunken ha 750 m transistor 1548 b A2 SMD IC MARKING smd transistor 1SS
Text: T e m ic S593TRW Semiconductors MOSMIC for TV-Tùner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Applications Electrostatic sensitive device. ^ Observe precautions for handling. M Low noise gain controlled input stages in UHF- and VHFtuner with 5 V supply voltage.
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S593TRW
S593TRW
D-74025
22-Oct-97
SMD transistor Marking 1Ss
telefunken ha 750 m
transistor 1548 b
A2 SMD IC MARKING
smd transistor 1SS
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W1P 59 transistor
Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors
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197/197X
S310N
W1P 59 transistor
W1p 48 TRANSISTOR
transistor w1P 83
ICM AP 1703
transistor SMD marked RNW
transistor BD139 PH 71
W1P 66 transistor
transistor w1P 91
Pnp transistor smd ba rn
w1p npn
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