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    MBT390 Search Results

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    MBT390 Price and Stock

    Rochester Electronics LLC SMBT3904B5000

    TRANS NPN 40V 0.2A PG-SOT23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SMBT3904B5000 Bulk 820,000 13,172
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    Rochester Electronics LLC NMBT3906VL

    NEXPERIA NMBT3906 - PNP SWITCHIN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NMBT3906VL Bulk 400,000 13,172
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    Rochester Electronics LLC MMBT3904TT1H

    TRANS NPN 40V 0.2A SC75 SOT416
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMBT3904TT1H Bulk 329,293 6,662
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    Rochester Electronics LLC MMBT3904WT1H

    TRANS NPN 40V 0.2A SC70-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMBT3904WT1H Bulk 218,059 11,539
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    Rochester Electronics LLC MMBT3906WT1

    TRANS PNP 40V 0.2A SOT323
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMBT3906WT1 Bulk 141,750 11,539
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    Find more MBT390 price and stock on Findchips.com

    MBT390 Datasheets (36)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MBT3904 On Semiconductor Programmable Precision Reference Original PDF
    MBT3904DW E-Tech Electronics Dual General Purpose Transistors Original PDF
    MBT3904DW Weitron Dual General Purpose Transistor NPN+NPN Silicon Original PDF
    MBT3904DW1 On Semiconductor Dual General Purpose Transistors Original PDF
    MBT3904DW1T1 E-Tech Electronics Dual General Purpose Transistors Original PDF
    MBT3904DW1T1 Leshan Radio Company Dual General Purpose Transistors Original PDF
    MBT3904DW1T1 Motorola Dual General Purpose Transistors Original PDF
    MBT3904DW1T1 On Semiconductor Dual General Purpose Transistors Original PDF
    MBT3904DW1T1 On Semiconductor Dual General Purpose Transistors Original PDF
    MBT3904DW1T1 On Semiconductor Dual General Purpose Transistors Original PDF
    MBT3904DW1T1 On Semiconductor Dual General Purpose Transistors Original PDF
    MBT3904DW1T1/D On Semiconductor SEMICONDUCTOR TECHNICAL DATA Original PDF
    MBT3904DW1T1/D On Semiconductor SOT-63/SC-8 CASE 419B STYLE 1 Original PDF
    MBT3904DW1T1/D On Semiconductor CASE 419B-1, STYLE 1 Original PDF
    MBT3904DW1T1-D On Semiconductor Dual General Purpose Transistor Original PDF
    MBT3904DW1T1G On Semiconductor Dual General Purpose Transistors Original PDF
    MBT3904DW1T1G On Semiconductor Dual General Purpose Transistors Original PDF
    MBT3904DW1T3 On Semiconductor General Purpose Transistor Dual NPN; Package: SC-88/SC70-6/SOT-363 6 LEAD; No of Pins: 6; Container: Tape and Reel; Qty per Container: 10000 Original PDF
    MBT3904DW1T3 On Semiconductor Dual General Purpose Transistors Original PDF
    MBT3904DW1T3G On Semiconductor General Purpose Transistor Dual NPN; Package: SC-88/SC70-6/SOT-363 6 LEAD; No of Pins: 6; Container: Tape and Reel; Qty per Container: 10000 Original PDF

    MBT390 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MBT3906DW General Purpose Transistor PNP Silicon 1 2 3 6 5 1 4 3 SOT-363 SC-88 6 5 2 4 PNP+PNP Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -40 -40


    Original     		MBT3906DW OT-363 SC-88) MBT3906DW OT-363 PDF

    Untitled

    Abstract: No abstract text available
    Text: MBT3904DW Dual General Purpose Transistor NPN+NPN Silicon 1 2 3 6 5 1 4 3 SOT-363 SC-88 6 5 2 4 NPN+NPN Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Thermal Characteristics


    Original     		MBT3904DW OT-363 SC-88) MBT3904DW OT-363 PDF

    Untitled

    Abstract: No abstract text available
    Text: MBT3906DW General Purpose Transistor PNP Silicon 1 2 3 6 5 1 4 3 SOT-363 SC-88 6 5 2 4 PNP+PNP M aximum R atings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -40 -40


    Original     		MBT3906DW OT-363 SC-88) MMBT3906DW OT-363 PDF

    Untitled

    Abstract: No abstract text available
    Text: MBT3904DW General Purpose Transistor NPN Silicon 1 2 3 6 5 1 4 3 SOT-363 SC-88 6 5 2 4 NPN+NPN Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Thermal Characteristics


    Original     		MBT3904DW OT-363 SC-88) MBT3904DW OT-363 PDF

    Untitled

    Abstract: No abstract text available
    Text: MBT3904DW1T1G, MBT3904DW2T1G, MBT3904DW1TG Dual General Purpose Transistors The MBT3904DW1T1G and MBT3904DW2T1G devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in


    Original     		MBT3904DW1T1G, MBT3904DW2T1G, SMMBT3904DW1TG MBT3904DW1T1G MBT3904DW2T1G 23/SOTâ 363/SCâ MBT3904DW1T1/D PDF

    Untitled

    Abstract: No abstract text available
    Text: MBT3906DW1T1 Dual General Purpose Transistor The MBT3906DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in


    Original     		MBT3906DW1T1 23/SOT MBT3906DW1T1 363/SC PDF

    1N916

    Abstract: MBT3904DW1T1
    Text: MBT3904DW1T1 Dual General Purpose Transistor The MBT3904DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in


    Original     		MBT3904DW1T1 MBT3904DW1T1 23/SOT r14525 MBT3904DW1T1/D 1N916 PDF

    1N916

    Abstract: MBT3906DW1T1
    Text: MBT3906DW1T1 Dual General Purpose Transistor The MBT3906DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in


    Original     		MBT3906DW1T1 MBT3906DW1T1 23/SOT 363/SC r14525 MBT3906DW1T1/D 1N916 PDF

    1N916

    Abstract: MBT3906DW1T1 MBT3906DW1T1G
    Text: MBT3906DW1T1 Dual General Purpose Transistor The MBT3906DW1T1 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in


    Original     		MBT3906DW1T1 MBT3906DW1T1 OT-23/SOT-323 OT-363 MBT3906DW1T1/D 1N916 MBT3906DW1T1G PDF

    Untitled

    Abstract: No abstract text available
    Text: MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications


    Original     		MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 23/SOT MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 PDF

    EE-43007

    Abstract: EE 23 bobbin vertical MBT3906 diode W1 NCP1055 core EE 25 transformer EE-42211 EE 25 bobbin vertical MC33340 NIS6111
    Text: DN06023/D Design Note – DN06023/D Universal AC 15 W 4 Cell Charger Device Application Input Voltage Output Power Topology I/O Isolation MBT3906 MC33340 NCP1055 NIS6111 4 Cell NiCd-NiMH Battery Charger Universal 90-264 Vac 15 Watt Flyback Optional Other Specifications


    Original     		DN06023/D MBT3906 MC33340 NCP1055 NIS6111 EE-43007 EE 23 bobbin vertical MBT3906 diode W1 NCP1055 core EE 25 transformer EE-42211 EE 25 bobbin vertical MC33340 NIS6111 PDF

    1N916

    Abstract: MBT3904DW MMBT3904W
    Text: MBT3904DW Dual General Purpose Transistor NPN+NPN Silicon 1 2 3 6 5 1 * “G” Lead Pb -Free 4 3 SOT-363(SC-88) 6 5 2 4 NPN+NPN Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol


    Original     		MBT3904DW OT-363 SC-88) MBT3904DW OT-363 1N916 MMBT3904W PDF

    Untitled

    Abstract: No abstract text available
    Text: MBT3904DW1T1G, MBT3904DW2T1G, MBT3904DW1TG Dual General Purpose Transistors The MBT3904DW1T1G and MBT3904DW2T1G devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in


    Original     		MBT3904DW1T1G, MBT3904DW2T1G, SMMBT3904DW1TG MBT3904DW1T1G MBT3904DW2T1G OT-23/SOT-323 OT-363 OT-363/SC-88/ SC70-6 AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: MBT3904DW1T1 Dual General Purpose Transistor The MBT3904DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in


    Original     		MBT3904DW1T1 23/SOT MBT3904DW1T1 PDF

    Dual General Purpose Transistors SC70-6

    Abstract: marking code 12 SOT-363 amplifier marking 12 SOT-363 amplifier SOT-363 footprint 1N916 419B-02 MBT3904DW1T1 MBT3904DW1T1G MBT3904DW2T1 MBT3904DW2T1G
    Text: MBT3904DW1T1, MBT3904DW2T1 Dual General Purpose Transistors The MBT3904DW1T1 and MBT3904DW2T1 devices are a spin-of f of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two


    Original     		MBT3904DW1T1, MBT3904DW2T1 MBT3904DW1T1 MBT3904DW2T1 OT-23/SOT-323 OT-363 OT-363/SC-88/ SC70-6 Dual General Purpose Transistors SC70-6 marking code 12 SOT-363 amplifier marking 12 SOT-363 amplifier SOT-363 footprint 1N916 419B-02 MBT3904DW1T1G MBT3904DW2T1G PDF

    Untitled

    Abstract: No abstract text available
    Text: MBT3906DW1, MBT3906DW1 Dual General Purpose Transistor The MBT3906DW1 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in


    Original     		MBT3906DW1, SMBT3906DW1 MBT3906DW1 OT-23/SOT-323 OT-363 AEC-Q101 MBT3906DW1T1/D PDF

    MBT3904DW1T1

    Abstract: SOT 363 NP 1N916 MBT3906DW1T1 MBT3946DW1T1
    Text: MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications


    Original     		MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 23/SOT MBT3904DW1T1 MBT3906DW1T1 MBT3904DW1T1 SOT 363 NP 1N916 MBT3906DW1T1 MBT3946DW1T1 PDF

    MBT3906DW1T1G

    Abstract: 1N916
    Text: MBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in


    Original     		MBT3906DW1T1G MBT3906DW1T1G OT-23/SOT-323 OT-363 MBT3906DW1T1/D 1N916 PDF

    1N916

    Abstract: MBT3906DW VCE-30
    Text: MBT3906DW Dual General Purpose Transistor PNP+PNP Silicon 1 2 3 6 5 1 * “G” Lead Pb -Free 4 3 SOT-363(SC-88) 6 5 2 4 PNP+PNP Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol


    Original     		MBT3906DW OT-363 SC-88) MBT3906DW OT-363 1N916 VCE-30 PDF

    MBT3904 datasheet

    Abstract: MBT3904 MBT3904 equivalent MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT–363 six–leaded


    Original     		MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 23/SOT 363/SC STYLE00 MBT3904 MBT3904 datasheet MBT3904 equivalent MBT3904DW1T1 MBT3906DW1T1 PDF

    Untitled

    Abstract: No abstract text available
    Text: MBT3904DW General Purpose Transistor NPN Silicon 1 2 3 6 5 1 4 3 SOT-363 SC-88 6 5 2 4 NPN+NPN Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Thermal Characteristics


    Original     		MBT3904DW OT-363 SC-88) MBT3904DW OT-363 PDF

    MBT3906DWITI

    Abstract: MBT390 MBT3946DW1 MBT3946DWI MBT3904DW1 i7050 MBT3906DW1T1 MBT3946DW1T1 MBT3904DWITI
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MBT3904DWlT1/D DATA — Dual General Purpose Transistors The MBT3904DW1TI, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed


    Original     		MBT3904DWlT1/D MBT3904DW1TI, MBT3906DW1T1, MBT3946DW1T1 23/SOT MBT3904DWI MBT3906DWI MBT3946DWI 14WI-247 MBT3906DWITI MBT390 MBT3946DW1 MBT3904DW1 i7050 MBT3906DW1T1 MBT3946DW1T1 MBT3904DWITI PDF

    Untitled

    Abstract: No abstract text available
    Text: MBT3906DW1T1G, MBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in


    Original     		MBT3906DW1T1G, SMBT3906DW1T1G MBT3906DW1T1G 23/SOTâ MBT3906DW1T1/D PDF

    SMBT3906DW1T1G

    Abstract: MBT3906DW1T1G
    Text: MBT3906DW1T1G, MBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in


    Original     		MBT3906DW1T1G, SMBT3906DW1T1G MBT3906DW1T1G OT-23/SOT-323 OT-363 AEC-Q101 MBT3906DW1T1/D PDF