SOT-23 3A Search Results

Contextual Info: SOT-23 PACKAGE REL MONITOR DATA High Temperature Storage Life +150 deg C, 1000 hours Device Lot No Pkg MSL Soak MIC5255 3.0YM5 6A23007M70 SOT-23-5 L1 MIC2514 YM5 247494M01 SOT-23-5 L1 MIC280 0YM6 CG68290MEA SOT-23-6 L1 MIC2005M 0.5YM6 5A26083MND SOT-23-6 n/a

1N4937 SMD

Abstract: diode 1n4007 melf smd 2n5401 smd 1n4001 melf diode 1n4007 melf 2n2222a SOT223 1N4148 SOD-80 2n2222a SOT23 1N5819 SOD80 2N2369 SOT-23
Contextual Info: Leaded to Surface Mount Equivalents LEADED SMD CASE COMMENTS 1N 914 CMPD 914 CLL914 CMPD28:i6 CMPD28IÌ8 CMPD7000 BAS28 SOT-23 SOD-80 SOT-23 SOT-23 SOT-23 SOT-143 Single Switching Diode Leadless Switching Diode Dual, Common Anode Dual, Common Cathode Dual, In Series

sot-23 Marking 3D

Abstract: BC856 sot-23 MARKING CODE 3d 3D marking sot23 3H SOT23 BC856B SOT23 BC856A BC856B BC857 BC858
Contextual Info: PNP General Purpose Transistor: BC856/857/858 Features: t
Low current max.100mA t
Low voltage (max.65v) Applications: t
SOT-23 Ordering Information Type No. Marking: Package Code: BC856A/B 3D/3A/3B SOT-23 BC857A/B/C 3H/3E/3F/3G SOT-23 BC858A/B/C 3J/3K/3L

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes CMPSH-3A SOT-23 SCHOTTKY BARRIER DIODE FEATURES  Fast Switching Speed  Low Forward Voltage  Small Plastic Package MARKING: DB1 MAXIMUM RATINGS Ta=25℃ unless otherwise noted

MMBD501

Abstract: MMBV2098 MBAV99 A5 sot-23 single DIODE MMBV105G MMBV2097 A5 sot-23 DIODE MMBD2837 MBAS16 MBAV70
Contextual Info: SURFACE MOUNT PRODUCTS — SOT-23 continued SOT-23 Switching Diodes (Dual Unless Otherwise Noted) Diode Pinout: Noted Below Device Marking MMBD2836 MBAW56 MMBD2835 MBAV74 MMBD2838 MBAV70 MMBD2837 MMBD6100 MMBD914 MBAS16 MBAL99 MMBD6050 MBAV99 MMBD7000 A2

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS NCE8205 N-Channel MOSFETS SOT-23-6L FEATURE Low on-resistance APPLICATIONS Li-ion battery management applications Maximum ratings Ta=25℃ unless otherwise noted Parameter

Contextual Info: 君耀电子有限公司 Brightking Co.,Ltd w w w. b r i g h t k i n g . c o m UBT23A05L02 SOT-23 UAT52A05L02 SOT-523 Ultra-low capacitance TVS diode array for ESD protection UBT23A05L02 SOT-23 / UAT52A05L02 (SOT-523) with its small size, ultra-low capacitance and low clamping voltage, is

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Diode 1N5817-1N5819 SCHOTTKY BARRIER DIODE SOT-23-3L FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. 1. ANODE 3.CATHODE

TRANSISTOR SMD MARKING CODE 3f

Abstract: transistor smd marking code 3l SMD TRANSISTOR MARKING 3B 3F smd transistor TRANSISTOR SMD MARKING CODE 3K smd transistor 3f smd transistor 3g TRANSISTOR SMD MARKING CODE 3G smd transistor 3K transistor smd 3E
Contextual Info: SMD General Purpose Transistor PNP BC856/BC857/BC858 SMD General Purpose Transistor (PNP) Features • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data SOT-23 SOT-23, Plastic Package Case: Solderable per MIL-STD-202G, Method 208

Contextual Info: 5YM5EMI SEMICONDUCTOR SOT -23 Plastic Encapsulate Transistors BC 856ALT1, B LT1 TRANSISTOR BC8 57ALT1 , BLT1 CLT1 BC8 58ALT1 , BLT1 CLT1 PNP SOT — 23 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation PCM : 0.2 W (Tamb=25 °C) Collector current

BC857

Abstract: BC858 BC856 BC856B BC857 Plastic BC857C BC856A BC857A BC857B BC858A
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors BC856A,B TRANSISTOR BC857A, B,C BC858A, B,C PNP SOT-23 FEATURES y Ideally suited for automatic insertion y For Switching and AF Amplifier Applications 1. BASE 2. EMITTER

bc857

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors BC856A, B BC857A, B,C BC858A, B,C TRANSISTOR PNP SOT-23 FEATURES y Ideally suited for automatic insertion y For Switching and AF Amplifier Applications 1. BASE 2. EMITTER

Contextual Info: SSS3402A N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SOT-23 RDS(ON) (m ) Max D 60 @VGS = 10V 25V G 3A 80 @VGS = 4.5V S 170 @VGS = 2.5V D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. G SOT-23 package. S

sot-23 P-Channel MOSFET

Contextual Info: SSS3401L P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SOT-23 RDS(ON) (mΩ) Max D 70 @VGS = -10V G -3A -30V 95 @VGS = -4.5V S 190 @VGS = -2.5V D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. G SOT-23 package.

diode 1N5819

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23-3L Plastic-Encapsulate Diode 1N5817, 1N5819 SOT-23-3L SCHOTTKY DIODE - 1. ANODE FEATURES 3.CATHODE + Power dissipation PD : 300 mW Ta=25℃ Collector current IF : 1 A Collector-base voltage VR : 1N5817:

12v to 20v cuk converter

Contextual Info: LMR62421 LMR62421 SIMPLE SWITCHER 24Vout, 2.1A Step-Up Voltage Regulator in SOT-23 Literature Number: SNVS734A LMR62421 SIMPLE SWITCHER® 24Vout, 2.1A Step-Up Voltage Regulator in SOT-23 Features Performance Benefits • ■ ■ ■ ■ ■ ■ ■ ■

R222 smd

Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Contextual Info: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP

sot-23 Marking sj

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23-3L Plastic-Encapsulate Diode 1N5817, 1N5819 SOT-23-3L SCHOTTKY DIODE FEATURES + 1. ANODE Power dissipation PD : 300 mW Ta=25℃ Collector current IO : 1A Collector-base voltage VR : 1N5817: 20 V 1N5819: 40

DA5 diode

Abstract: marking db2 sot23 marking db2 DA5 marking transistor D95 diode Da5 DA5 SOT23 marking 3a marking SOT23 V 4 diode da5 sot 23
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes CMPSH-3/3A/3C/3S SCHOTTKY DIODE SOT-23 FEATURES mW Tamb=25℃ 0. 95 0. 4 2. 9 0. 95 2. 4 1. 3 Forward Current 100 mA IF: Reverse Voltage 30 V VR: Operating and storage junction temperature range

M2301A

Abstract: APM2301A J-STD-020A 2301AA
Contextual Info: APM2301A P-Channel Enhancement Mode MOSFET Features Pin Description D • -20V/-3A , RDS ON =72mΩ(typ.) @ VGS=-4.5V RDS(ON)=98mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • • Reliable and Rugged SOT-23 Package G Top View of SOT-23

Contextual Info: MMBT3904E NPN General Purpose Transistor 3 1 The MMBT3904E device is a spin-off of our popular SOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-1123 surface mount package.

APM2307

Abstract: J-STD-020A mosfet APM2307 DIODE marking A.3 sot-23 MARKING CODE GS 5
Contextual Info: APM2307 P-Channel Enhancement Mode MOSFET Features Pin Description D • -30V/-3A , RDS ON =100mΩ(typ.) @ VGS=-10V RDS(ON)=140mΩ(typ.) @ VGS=-4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • • Reliable and Rugged SOT-23 Package G Top View of SOT-23

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJ2305K P-Channel 12-V D-S MOSFET SOT-23-3L FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2301S P-Channel 20-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S1