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    SOT-23 187 Search Results

    SOT-23 187 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 187 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Package Information SOT-23 Tape and Reel Data and Package Dimensions SOT-23 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate


    Original     		PDF OT-23 177cm 330cm OT-23

    Code sot-23 on semiconductor

    Abstract: wc sot23 rd sot23
    Text: SOT-23 Tape and Reel Data SOT-23 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated


    Original     		PDF OT-23 177cm 330cm Code sot-23 on semiconductor wc sot23 rd sot23

    R222 smd

    Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
    Text: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP


    Original     		PDF CA-001175 BA41-00418A BA62-00194A BA62-00306A BA68-40005L 120OHM 143OHM/132MHZ 213OHM/390MHZ, R222 smd RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548

    4T SOT 23

    Abstract: MMBD301 SOT23 JEDEC standard orientation
    Text: DISCRETE POWER AND SIGNAL TECHNOLOGIES MMBD301 CONNECTION DIAGRAM 3 3 PACKAGE 4T SOT-23 TO-236AB Low 2 NC 1 1 2 PACKAGE SOT-23 TO236AB Schottky Barrier Diode Sourced from Process GD Absolute Maximum Ratings* Sym Tstg TJ Wiv PF TA = 25OC unless otherwise noted


    Original     		PDF MMBD301 OT-23 O-236AB O236AB 4T SOT 23 MMBD301 SOT23 JEDEC standard orientation

    SF7B

    Abstract: No abstract text available
    Text: LMR12010 LMR12010 SIMPLE SWITCHER 20Vin, 1A Step-Down Voltage Regulator in SOT-23 Literature Number: SNVS731A LMR12010 SIMPLE SWITCHER® 20Vin, 1A Step-Down Voltage Regulator in SOT-23 Applications • ■ ■ ■ ■ ■ Point-of-Load Conversions from 3.3V, 5V, and 12V Rails


    Original     		PDF LMR12010 LMR12010 20Vin, OT-23 SNVS731A SF7B

    MMBD701

    Abstract: D0 sot23 A0 SOT23 FS PKG CODE 49
    Text: MMBD701 CONNECTION DIAGRAM 3 3 PACKAGE 5HF SOT-23 TO-236AB Low 2 NC 1 1 2 PACKAGE SOT-23 TO236AB Schottky Barrier Diode Sourced from Process GE Absolute Maximum Ratings* Sym Tstg TJ Wiv PF TA = 25OC unless otherwise noted Parameter Storage Temperature Operating Junction Temperature


    Original     		PDF MMBD701 OT-23 O-236AB O236AB MMBD701 D0 sot23 A0 SOT23 FS PKG CODE 49

    SOT23 JEDEC standard orientation

    Abstract: SOT-23 4TF MMBD301
    Text: MMBD301 CONNECTION DIAGRAM 3 3 PACKAGE 4TF SOT-23 TO-236AB Low 2 NC 1 1 2 PACKAGE SOT-23 TO236AB Schottky Barrier Diode Sourced from Process GD Absolute Maximum Ratings* Sym Tstg TJ Wiv PF TA = 25OC unless otherwise noted Parameter Storage Temperature Operating Junction Temperature


    Original     		PDF MMBD301 OT-23 O-236AB O236AB SOT23 JEDEC standard orientation SOT-23 4TF MMBD301

    FAIRCHILD SOT-23 MARK 1a

    Abstract: BC846 SOT23 NPN sot23 mark NF 847C BC846 BC846A BC846B BC847 BC847A fAIRCHILD BC847b
    Text: BC847A BC847B BC847C C C E SOT-23 BC846A / BC846B / BC847A / BC847B / BC847C BC846A BC846B E B B SOT-23 Mark: 1A. / 1B. Mark: 1E. / 1F. / 1G. NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1.0 µA to 50 mA.


    Original     		PDF BC847A BC847B BC847C OT-23 BC846A BC846B BC847A BC847B BC846A FAIRCHILD SOT-23 MARK 1a BC846 SOT23 NPN sot23 mark NF 847C BC846 BC847 fAIRCHILD BC847b

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904 PZT3904 C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1A NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23.


    Original     		PDF 2N3904 MMBT3904 PZT3904 2N3904 MMBT3904 OT-23 OT-223

    XC6203X332

    Abstract: XC6203X502 XC6203332
    Text: ◆CMOS Low Power Consumption 16 A MAX. ◆Dropout Voltage : 150mV @ 100mA, 300mV @ 200mA ◆Maximum Output Current : More Than 400mA (3.3V) ◆Highly Accurate : ±2% ◆SOT-23 / SOT-89 / SOT-223 / TO-92 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES


    Original     		PDF 150mV 100mA, 300mV 200mA 400mA OT-23 OT-89 OT-223 XC6203 XC6203P XC6203X332 XC6203X502 XC6203332

    marking P2 sot-23

    Abstract: wA MARKING SOT-23 SERIES DIODE 1403A MMBD1400 MMBD1401 MMBD1401A MMBD1403 MMBD1404 MMBD1405 1405A
    Text: CONNECTION DIAGRAMS 3 3 1401 3 3 1403 29 3 1 2 SOT-23 SOT-23 2 NC 1 2 1 2 3 3 1404 1405 2 1 MARKING MMBD1401 29 MMBD1404 MMBD1403 32 MMBD1405 1 33 34 1 2 1 2 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF OT-23 MMBD1401 MMBD1404 MMBD1403 MMBD1405 marking P2 sot-23 wA MARKING SOT-23 SERIES DIODE 1403A MMBD1400 MMBD1401A MMBD1404 MMBD1405 1405A

    499-P44-10

    Abstract: 499-040-00-D 499-P36-10-TO-236-3 TO-236-3 Wells-CTI 499-P36-10 499-P43-10-5 Sockets equivalent 499-P37-10-TO-243-4 780 AC
    Text: Burn-In Test Sockets 499 Series Surface Mount Family of SOT & TO Device Sockets • • • • • Wide product selection Gold contact plating High temperature materials Low insertion force Small outlines for greater board density 499-P36-10-TO-236-3 Lead SOT-23 Sockets


    Original     		PDF 499-P36-10-TO-236-3 OT-23 499-P43-10-5 499-P44-10-6 499-040-00-D 499-P35-10-3 O-252 499-P44-10 TO-236-3 Wells-CTI 499-P36-10 Sockets equivalent 499-P37-10-TO-243-4 780 AC

    Wells-CTI

    Abstract: 499-P44-10 499-P36-10-TO-236-3 499-P37-10-TO-243-4 499-p37-10 499-p38-10 499-P43-10-5 wells-cti 410 Wells-CTI 499-P35 499-040-00-D
    Text: Burn-In Test Sockets 499 Series Surface Mount Family of SOT & TO Device Sockets • • • • • Wide product selection Gold contact plating High temperature materials Low insertion force Small outlines for greater board density 499-P36-10-TO-236-3 Lead SOT-23 Sockets


    Original     		PDF 499-P36-10-TO-236-3 OT-23 499-P43-10-5 499-P44-10-6 499-040-00-D 499-P35-10-3 O-252 Wells-CTI 499-P44-10 499-P37-10-TO-243-4 499-p37-10 499-p38-10 wells-cti 410 Wells-CTI 499-P35

    transistor bel 100

    Abstract: bel 188 transistor CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14
    Text: MMBTA14 PZTA14 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol


    Original     		PDF MMBTA14 PZTA14 OT-23 OT-223 transistor bel 100 bel 188 transistor CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14

    bel 188 transistor

    Abstract: MPSA92 FAIRCHILD SEMICONDUCTOR TR516 CBVK741B019 F63TNR MMBTA92 MPSA92 PN2222N PZTA92 SOT-23 2D
    Text: MMBTA92 PZTA92 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter


    Original     		PDF MMBTA92 PZTA92 OT-23 OT-223 bel 188 transistor MPSA92 FAIRCHILD SEMICONDUCTOR TR516 CBVK741B019 F63TNR MMBTA92 MPSA92 PN2222N PZTA92 SOT-23 2D

    Untitled

    Abstract: No abstract text available
    Text: LMR12010 www.ti.com SNVS731A – SEPTEMBER 2011 – REVISED SEPTEMBER 2011 LMR12010 SIMPLE SWITCHER 20Vin, 1A Step-Down Voltage Regulator in SOT-23 Check for Samples: LMR12010 FEATURES 1 • • • • 23 • • • • • Input voltage range of 3V to 20V


    Original     		PDF LMR12010 SNVS731A LMR12010 20Vin, OT-23 LMR12010X) LMR12010Y) OT23-6

    SF7B

    Abstract: No abstract text available
    Text: LMR12010 www.ti.com SNVS731A – SEPTEMBER 2011 – REVISED SEPTEMBER 2011 LMR12010 SIMPLE SWITCHER 20Vin, 1A Step-Down Voltage Regulator in SOT-23 Check for Samples: LMR12010 FEATURES 1 • • • • 23 • • • • • Input voltage range of 3V to 20V


    Original     		PDF LMR12010 SNVS731A LMR12010 20Vin, OT-23 LMR12010X) LMR12010Y) OT23-6 SF7B

    Untitled

    Abstract: No abstract text available
    Text: MMBTA92 PZTA92 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter


    Original     		PDF MMBTA92 PZTA92 OT-23 OT-223

    bel 188 transistor

    Abstract: SOT23 1128 of bel 188 transistor
    Text: MMBTA28 PZTA28 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 3SS NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. Absolute Maximum Ratings* Symbol


    Original     		PDF MPSA28 MMBTA28 PZTA28 MPSA28 MMBTA28 OT-23 OT-223 bel 188 transistor SOT23 1128 of bel 188 transistor

    Untitled

    Abstract: No abstract text available
    Text: LMR12010 www.ti.com SNVS731A – SEPTEMBER 2011 – REVISED SEPTEMBER 2011 LMR12010 SIMPLE SWITCHER 20Vin, 1A Step-Down Voltage Regulator in SOT-23 Check for Samples: LMR12010 FEATURES 1 • • • • 23 • • • • • Input voltage range of 3V to 20V


    Original     		PDF LMR12010 SNVS731A LMR12010 20Vin, OT-23 LMR12010X) LMR12010Y) OT23-6

    CBVK741B019

    Abstract: F63TNR MMBTA13 MPSA13 MPSA14 PN2222N PZTA13
    Text: MMBTA13 PZTA13 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1M NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.


    Original     		PDF MMBTA13 PZTA13 OT-23 OT-223 MPSA14 CBVK741B019 F63TNR MMBTA13 MPSA13 PN2222N PZTA13

    pnp transistor bel 188

    Abstract: AMPSA92 CBVK741B019 F63TNR MMBTA92 MPSA92 PN2222N PZTA92 tc 144 e SOT-23 2D
    Text: MMBTA92 PZTA92 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units


    Original     		PDF MMBTA92 PZTA92 OT-23 OT-223 pnp transistor bel 188 AMPSA92 CBVK741B019 F63TNR MMBTA92 MPSA92 PN2222N PZTA92 tc 144 e SOT-23 2D

    sot 223 fairchild

    Abstract: sot-23 15V vebo pnp CBVK741B019 F63TNR MMBTA92 MPSA92 PN2222N PZTA92 SOT-23 2D Fairchild MPSA92
    Text: MMBTA92 PZTA92 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter


    Original     		PDF MMBTA92 PZTA92 OT-23 OT-223 sot 223 fairchild sot-23 15V vebo pnp CBVK741B019 F63TNR MMBTA92 MPSA92 PN2222N PZTA92 SOT-23 2D Fairchild MPSA92

    Untitled

    Abstract: No abstract text available
    Text: RF2363 DUAL-BAND 3V LOW NOISE AMPLIFIER Package Style: SOT, 8-Lead Features „ „ „ „ „ „ Low Noise and High Intercept Point 18dB Gain at 900MHz 21dB Gain at 1900MHz Low Supply Current Single 2.5V to 5.0V Power Supply Very Small SOT-23-8 Plastic Package


    Original     		PDF RF2363 900MHz 1900MHz OT-23-8 RF2363 950MHz GSM/1850MHz DS040114