SOT 2SC1623 Search Results

m6 marking transistor sot-23

Abstract: 2SA812 2SC1623 hFE-200 marking m5 m5 marking transistor sot-23
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA812 SOT-23 TRANSISTOR PNP Unit : mm 1. BASE FEATURES z Complementary to 2SC1623 z High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) z High Voltage: Vceo=-50V 2. EMITTER

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA812 SOT-23 TRANSISTOR PNP Unit : mm 1. BASE FEATURES z Complementary to 2SC1623 z High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) z High Voltage: Vceo=-50V 2. EMITTER

MARKING l7

Abstract: sot-23 l6 2SC1623 transistor marking L6 MARKING L4
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC1623 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current mA

hFE-200

Abstract: 2SC1623 l4 transistor l6 sot23 l5 transistors L5 SOT23 MARKING l7 transistor marking L6 l5 transistor SOT-23 marking l4 sot-23
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 TRANSISTOR NPN FEATURES z High DC current gain :hFE=200(Typ)VCE=6V, z High voltage:VCEO=50V 1. BASE IC=1mA 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

m6 marking transistor sot-23

Abstract: transistor SOT23 m6 hFE-200 transistor PNP marking M6 transistor M5 SOT23 2sa812
Contextual Info: 2SA812 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V — — MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 TRANSISTOR NPN FEATURES z High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA z High voltage:VCEO=50V 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SC1623 sot-23

Abstract: 2sc1623 sot-23 Marking L6 L6 TRANSISTOR marking L6 sot23 l4 sot-23 marking L6 marking transistor sot-23 npn sot23 l6 marking l4 sot-23 sot-23 Marking l7
Contextual Info: 2SC1623 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — High DC current gain :hFE=200(Typ)VCE=6V, High voltage:VCEO=50V — IC=1mA MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR mW (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 100 mA ICM: Collector-base voltage 60 V V(BR)CBO:

MARKING L4

Abstract: l4 transistor transistor marking L6 2SC1623 MARKING l7 L6 MARKING L6 TRANSISTOR
Contextual Info: Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC1623 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current mA ICM: 100 Collector-base voltage

Contextual Info: SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC1623 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current mA ICM: 100 Collector-base voltage V V(BR)CBO: 60 Operating and storage junction temperature range

2SC162

Abstract: 2SC1623
Contextual Info: DC COMPONENTS CO., LTD. 2SC1623 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency amplifier applications. SOT-23 Pinning .020 0.50 .012(0.30) 1 = Base 2 = Emitter 3 = Collector 3

2SC9014

Abstract: BEC npn 2SC9013 SOT-23 BTA43 BTA70 BA811 2SC1623L6 BT3904 BTA42 BT5551
Contextual Info: SOT-23 SMD Products Photograph of Products: Performance and Characteristics: NPN Silicon General Purpose Power Transistors Type Ptot Ic VCEO mW (mA) (V) hFE Polar 123 Type Ptot Ic VCEO (mW) (mA) (V) hFE Polar 123 2SC1623L3 225 100 40 60～90 BEC BCW60A 225

2SC1623 sot-23

Abstract: 2SC1623 marking l4 sot-23 marking L6 MARKING L4 L6 sot-23 sot-23 Marking l7 top marking L6 SOT23 MARKING L7
Contextual Info: 2SC1623 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 60 V Emitter-Base Voltage VEBO 5.0 V Collector Current - Continuous IC 100 mA

2SC1623K

Abstract: SOT-23-hg 2SC1623K-P sot-23 Marking l7 TRANSISTOR NPN 60V 600 MARKING CODE
Contextual Info: 2SC1623K 0.1A , 60V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE High DC current gain :hFE=200 Typ , VCE=6V, IC=1mA. High Voltage:VCEO=50V. A L 3 3 C B Top View

2sc1623

Abstract: 3 pin mini mold transistor 2SC1623 sot 2sc1623 L5 SOT23-3
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC1623 Preliminary NPN SILICON TRANSISTOR AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON TRANSISTOR MINI MOLD „ 3 2 DESCRIPTION SOT-23 The UTC 2SC1623 is a NPN silicon transistor using UTC’s advanced technology to provide customers with high DC current gain

MARKING l7

Abstract: l4 transistor 2SC1623 MARKING L4 transistor marking L6 L6 TRANSISTOR L6 IC marking L6
Contextual Info: 2SC1623 SOT-23-3L 2SC1623 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current ICM: 100 mA Collector-base voltage V V(BR)CBO: 60 Operating and storage junction temperature range

2SC1623

Abstract: L4 SOT23-3 TRS1623
Contextual Info: 2SC1623 TRS1623 TRANSISTOR NPN Features Power dissipation 。 P C M : 0.2 W (Tamb=25 C) Pluse Drain I CM : 0.1 mA Reverse Voltage V (BR)CBO : 60V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 1.BASE

L4 SOT23-3

Abstract: 2SC1623 npn sot23 l6 L5 SOT23-3
Contextual Info: 2SC1623 TRS1623 TRANSISTOR NPN Features Power dissipation 。 P C M : 0.2 W (Tamb=25 C) Pluse Drain I CM : 0.1 mA Reverse Voltage V (BR)CBO : 60V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 1.BASE

Contextual Info: 2SC1623 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 60 V Emitter-Base Voltage VEBO 7 V Collector Current - Continuous IC 150 mA Total Device Dissipation FR-5 Board

smd transistor marking L6 NPN

Abstract: SMD TRANSISTOR L6 smd transistor marking l6 smd transistor marking l7 marking L6 npn smd L7 smd transistor L6 smd transistor SMD TRANSISTOR MARKING l4 smd sot23 marking l6 smd marking l5
Contextual Info: Transistors SMD Type NPN Silicon Transistor 2SC1623 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 hFE = 200 TYP. 0.55 High DC Current Gain: +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 VCE = 6.0 V, IC = 1.0 mA +0.05 0.1-0.01 +0.1 0.97-0.1

Contextual Info: Product specification 2SC1623 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 hFE = 200 TYP. 0.55 High DC Current Gain: +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 VCE = 6.0 V, IC = 1.0 mA +0.05 0.1-0.01 +0.1 0.97-0.1 High Voltage: 0-0.1

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 2SC1623 Preliminary NPN SILICON TRANSISTOR AU DI O FREQU EN CY GEN ERAL PU RPOSE AM PLI FI ER N PN SI LI CON T RAN SI ST OR M I N I M OLD 3 1 ̈ 2 DESCRI PT I ON SOT-23 The UTC 2SC1623 is a NPN silicon transistor using UTC’s

Contextual Info: M C C SOT-23 P la s tic -E n c a p s u la te T ra n s is to rs ^ 2SC1623 TRANSISTOR NPN 1.BASE 2 .EMITTER 3.COLLECTOR FEATURES ^6%4rdlsslpation Pcm : 0.2 W (Tamb=25"C) Collector current ICM: H- 0.1A 2.4 Collector-base voltage V(br)cbo :60V Operating and storage Junction temperature range

transistor cross reference

Abstract: transistor c1008 npn transistor c1008 NPN C1008 s8550 npn SS8550 cross reference S9014 cross reference c1008 transistor s9014 equivalent S8050 equivalent
Contextual Info: Micro Commercial Components Small Signal Transistor Cross Reference Group by Package FORMALLY MICROSEMI CHATSWORTH SOT-23 PACKAGE MCC PART NUMBER HFE Pc mW Ic (mA) BVcbo (V) BVceo (V) Icb (µ A) vcb(V) Vce(sat) (V) fT (MHz) INDUSTRY STANDARD PART NUMBER