SOJ-32 WEIGHT Search Results

h 033

Abstract: SC-634-A D 835 LB-017 P32LA-300A-1
Contextual Info: Packing Magazine Name LB-017 32 pin SOJ 300 mil 17 1 16 C 32 F D B U H T I G J E P Q K M N M NOTE Each lead centerline is located within 0.12 mm (0.005 inch) of its true position (T.P.) at maximum material condition. ITEM MILLIMETERS INCHES B 21.21 +0.2

638 transistor

Abstract: h 033 SOJ-400
Contextual Info: Mounting Pad Packing Magazine Name MJ400-01A LB-044 32 pin SOJ 400 mil 17 1 16 C 32 D B E H G U J F I T K Q M P N M P32LE-400A NOTE Each lead centerline is located within 0.12 mm (0.005 inch) of its true position (T.P.) at maxi– mum material condition.

645p

Contextual Info: Crystal oscillator SOJ HIGH-FREQUENCY CRYSTAL OSCILLATOR SG-645 series Product number please refer to page 2 Q33645xxxxxxx00 • • • • Reflowable and high-density mounting-type SMD. Operable 3.3 V or 5.0 V. Output frequency from 32 MHz to 135 MHz.

SOJ32-P-400-1

Contextual Info: 32P0N-A EIAJ Package Code SOJ32-P-400-1.27 Plastic 32pin 400mil SOJ LOC JEDEC Code – Weight(g) Lead Material Alloy 42 e Under Development D b2 c e1 HE E e1 I1 I2 17 32 Recommended Mount Pad Symbol 1 16 L A A1 b1 e y b SEATING PLANE A A1 b b1 c D E e e1

Contextual Info: 32P0J Plastic 32pin 300mil SOJ EIAJ Package Code SOJ32-P-300-1.27 JEDEC Code – Weight g 1.03 Lead Material Alloy 42 D e1 c 32 e1 HE 17 E b2 I1 I2 e Recommended Mount Pad 1 Symbol 16 L A A1 b1 e y b SEATING PLANE A A1 b b1 c D E e e1 HE L y b2 I1 I2 Dimension in Millimeters

MO-061-AB

Abstract: 32P0K SOJ32-P-400-1 DSA0037294.txt
Contextual Info: 32P0K Plastic 32pin 400mil SOJ EIAJ Package Code SOJ32-P-400-1.27 JEDEC Code MO-061AB Weight g 1.33 Lead Material Alloy 42 e b2 D 32 I1 I2 c e1 HE E e1 17 Recommended Mount Pad Symbol 1 16 L A A1 b1 e y b SEATING PLANE A A1 b b1 c D E e e1 HE L y b2 I1 I2

SQJ28-P-400-127

Contextual Info: E2G0006-17-41 O K I Semiconductor _ Packaging Packaging 5 V Power Supply DRAM Products MSM514256C/CL MSM518126/L MSM518128/L MSM511664C/CL MSM511666C/CL MSM512100/L MSM512200/L MSM512800C MSM512805C MSM514100D/DL MSM514400D/DL MSM514800C/CSL MSM514900C/CSL

LGA 1156 PIN OUT diagram

Abstract: QSJ-44403 LGA 1150 Socket PIN diagram LGA 1155 Socket PIN diagram IC107-26035-20-G LGA 1151 PIN diagram REFLOW lga socket 1155 IC107-3204-G TB 2929 H alternative LGA 1155 pin diagram
Contextual Info: DIP8-P-300-2.54 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 0.46 TYP. 2/Dec. 11, 1996 DIP14-P-300-2.54 5 Package material Lead frame material Pin treatment Package weight (g)

Contextual Info: O K I Semiconductor Packaging Packaging Low Power SRAM Products Package Name M SM 51257C LL M SM 51257C L M SM 51257C LP No. of Pins 28 RS JS GS TS DIP SO J SO P TSOPfTypel/ll O o o o o o o 32 28 o 32 28 o 32 M SM 51V257C LL 28 o M SM 51V257C L 28 o o o M SM 51V257C LP

MARK W1 TSOP

Abstract: weight of SOP 16 package MSM548332 weight of SOP package
Contextual Info: O K I Semiconductor Packaging Multiport DRAM Products Packaging OKU Semiconductor Packaging Field Memory Products Package Name MSM514212 No. of Pins zs GS TS TS JS DIP ZIP SOP TSOP Typen TQFP SOJ O 28 r '\ 16 MSM514221B RS r o 20 O 26/20 o 16 MSM514222B o

NEC A39A

Abstract: NEC A39A 240 SOP28 330 mil land pattern NEC A39A 8 PIN mjh 106 120-PIN 282 185 01 smd TRANSISTOR code b6 ED-7500 transistor a39a SIP 400B
Contextual Info: IC PACKAGE MANUAL 1991, 1992, 1994, 1996 Document No. C10943XJ6V0IF00 Previous No. IEI-635, IEI-1213 Date Published January 1996 P Printed in Japan CHAPTER 1 PACKAGE OUTLINES AND EXPLANATION CHAPTER 2 CHAPTER 3 1 THROUGH HOLE PACKAGES 2 SURFACE MOUNT PACKAGES

SOJ32-P-400-1

Contextual Info: e y b 16 1 b1 Weight g 17 D JEDEC Code – 32 EIAJ Package Code SOJ32-P-400-1.27 SEATING PLANE L c Under Development Lead Material Alloy 42 E b2 A A1 b b1 c D E e e1 HE L y b2 I1 I2 Symbol Mar.’98 Dimension in Millimeters Min Nom Max 3.55 3.35 3.45 0.8

1730 PY

Abstract: 128-208L dl84
Contextual Info: TAPE and REEL • General Information The Tape and Reel packaging materials shall not adversely affect the visual, mechanical, and electrical characteristics or markings of the components. In all cases, the components must be protected from bent leads, lead contamination, ESD

SOP 8 200MIL

Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
Contextual Info: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with

m80c85ah

Abstract: M82C51A-2 OKI M82C51a-2 M82C12 m82c55a-2 oki m82c55a-2 M82C88-2 m82c84a-2 M82C59A-2 80C88A-10
Contextual Info: PACKAGING PACKAGE/PIN COUNT PRO­ DUCTS PART NAME CPUs M 80C86A-10 DIP M80C85AH il/U /n 40 40 SOP SSOP - - M 80C88A-10 40 - - M 81C55-5 M82C12 40 - - 24 - M82C37B-5 M82C51A-2 M 82C53-2 40 28 24 24 - M 82C54-2 24 M82C55A-2 40 28 - 18 24 32 - 20 24 - M82C59A-2

weight scale

Contextual Info: 7 8 DRAWING MADE THIS IN DRAWING THIRD IS ANGLE UNPUBLISHED. COPYRIGHT 19 6 5 3 4 2 1 PR O J EC TI O N BY AMP INCORPORATED. ALL INTERNATIO NAL L OC ,19 RELEASED FOR P U B L I C A T I O N RIGHTS DIST AG RESERVED. R E V IS IO N S 53 ZONE LTR A /\ SUPERSEDED 3 — 1 PER 0 4 4 0 - 0 1 1 4 - 9 6

MSM7731-02

Abstract: P-BGA313-3535-1 TBA 931 MsM82C59 MSM66 arm processor msm5299 SSOP20-P-250-0 QFJ28-P-S450-1 MSM65524A
Contextual Info: Datasheet CD-ROM Ver 1.23, July 1999 Bay of Islands, New Zealand Attention Please! People to People Technology 1. Regarding Operation • This is NOT a music CD. Please do not play it on an ordinary music CD player. It may cause damage to your ears and loudspeakers.

ED188512CA17

Abstract: EDI88512CA20N36B 2A153 ED188512CA
Contextual Info: W D\ EDI88512CA 512Kx8 Static Ram ELÈCTRON« 0ESK3N& NC. 512Kx8Static RAM CMOS, Monolithic Features 512Kx8 bit CMOS Static Random Access Memory • Access Times: 17*, 20,25,35, and 45ns The EDI88512CA is a 4 megabit Monolithic CMOS Static RAM. • Data Retention Function LP version

ED188512CA25CB

Contextual Info: ^EDI EDI88512CA 512Kx8 Static Ram ELECTRONIC DESIGNS, INC. 5962-95600 Features 512Kx8 Static RAM CMOS, Monolithic 512Kx8 bit CMOS Static Random Access Memory • Access Times: 17*, 20,25,35, and 45ns • Data Retention Function LP version • TTL Compatible Inputs and Outputs

Contextual Info: E2G0108-18-42 O K I Semiconductor svereion:Apr1998 MSM5 1 17400C_ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117400C is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117400C achieves high integration, high-speed operation, and low-power

Contextual Info: PRELIMINARY OKI Semiconductor MSM54V16258A/SL REVISION-2 1996.11.2 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM54V16258A/SL is a 262,144-word x 16-bit dynam ic RAM fabricated in OKI's CMOS silicon gate technology. The MSM54V16258A/SL achieves high integration,high-speed operation,and low povver consumption doe to quadruple polysilicon double metal CMOS. The MSM54V16258A/SL is

IC 50061

Abstract: LFBGA 50-P-400 QFP128-P-1420-0 qfp304 QFP304 tray size QSJ-44440 P-LFBGA84-0909-0 P-LFBGA224-1515-0 SOJ32-P-400-1
Contextual Info: This version: Apr. 2001 Previous version: Jun. 1997 PACKAGE INFORMATION 7. PACKING This document is Chapter 7 of the package information document consisting of 8 chapters in total. PACKAGE INFORMATION 7. PACKING 7. PACKING 7.1 Packing Type 7.1.1 Ordinary Packing

ED188512CA20N36B

Abstract: ED188512CA25CB ED188512CA20 75B7 EDI88512CA20N36B EDI88512LPA20F32B EDI88128CS EDI88512CA EDI88512LPA EDI8M8512C
Contextual Info: W5X EDI88512CA 512Kx8 Static Ram ELECTRONIC DESIGNS, INC 512Kx8 Static RAM CMOS, Monolithic Features 512Kx8 bit CMOS Static Random Access Memory The EDI88512CA is a 4 megabit Monolithic CMOS Static • Access Times: 17*, 2 0 ,2 5 ,3 5 , and 45ns • Data Retention Function LP version

toshiba toggle mode nand

Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
Contextual Info: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit