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    SOI RF SWITCH Search Results

    SOI RF SWITCH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    LBAA0QB1SJ-295 Murata Manufacturing Co Ltd SX1262 MODULE WITH OPEN MCU Visit Murata Manufacturing Co Ltd
    GRM-KIT-OVER100-DE-D Murata Manufacturing Co Ltd 0805-1210 over100uF Cap Kit Visit Murata Manufacturing Co Ltd

    SOI RF SWITCH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Modeling of SOI FET for RF Switch Applications

    Abstract: No abstract text available
    Text: RTU2D-2 Modeling of SOI FET for RF Switch Applications Tzung-Yin Lee and Sunyoung Lee Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617 Abstract — This paper presents the modeling of an SOI FET for RF switch applications. Given that the HF smallsignal predictability, i.e. the insertion loss and the isolation, is


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    PDF 12-stacked 12stacked Modeling of SOI FET for RF Switch Applications

    PE42480

    Abstract: No abstract text available
    Text: 2014-2015 High-Performance Analog Product Catalog Welcome to Peregrine Semiconductor Peregrine Semiconductor NASDAQ: PSMI , founder of RF SOI (silicon on insulator), is a leading fabless provider of high-performance, integrated RF solutions. Since 1988 Peregrine and its founding


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    PDF DOC-35227-4 PE42480

    rf mems switch spst

    Abstract: SKY13317-373 Hittite RF Switch SOI military switch EDN handbook rf3024 SKY13317-373LF RF3023 RF3025 2SMES-01
    Text: R F switching options: The right fit might come with a loss Manufacturers are offering SOI and MEMS alternatives to PIN-diode, GaAs, and electromechanical switches for a variety of RF applications, but you need to understand RF-switch specs before you commit to a new technology.


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    PDF AN-952, com/090917cs rf mems switch spst SKY13317-373 Hittite RF Switch SOI military switch EDN handbook rf3024 SKY13317-373LF RF3023 RF3025 2SMES-01

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE42650A SP3T High Power UltraCMOS RF Switch 30 MHz - 1000 MHz Product Description ig de s The PE42650A is manufactured on Peregrine’s UltraCMOS™ process, a patented variation of silicon-on-insulator SOI technology on a sapphire substrate, offering the performance


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    PDF PE42650A PE42650A 32-lead

    EM4222

    Abstract: soi switches 2003 Linear SOI switch body RF 2003 tinella RF low power hearing aids car Speed Sensor using RFID UHF RFID passive tag CMOS microwave distance sensors silicon on insulator FDSOI TECHNOLOGY
    Text: OCTOBER 2003 RFDESIGN RF AND MICROWAVE TECHNOLOGY FOR DESIGN ENGINEERS Why all the buzz about SOI? Silicon-on-insulator technology offers solutions to the higher-performance and lower-power dilemma Digital Systems: New two-antenna handset technology improves CDMA


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    BP050-0024UJ03

    Abstract: F923 PE4309 acg-6
    Text: Product Specification PE4309 50 Ω RF Digital Attenuator 6-bit, 31.5 dB, DC-4.0 GHz Product Description The PE4309 is manufactured on Peregrine’s UltraCMOS process, a patented variation of silicon-on-insulator SOI technology on a sapphire substrate, offering the performance


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    PDF PE4309 PE4309 BP050-0024UJ03 F923 acg-6

    Optimized CMOS-SOI Process for High Performance RF Switches

    Abstract: No abstract text available
    Text: Optimized CMOS-SOI Process for High Performance RF Switches A. B. Joshi, S. Lee, Y. Y. Chen, and T. Y. Lee Skyworks Solutions, Inc., Irvine, CA Email: aniruddha.joshi@ieee.org ABSTRACT In recent years, CMOS on Silicon-on-Insulator has rapidly evolved as a mainstream technology for switches used in


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    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE4305 50 Ω RF Digital Attenuator 5-bit, 15.5 dB, DC – 4.0 GHz Product Description de s ig The PE4305 is manufactured on Peregrine’s UltraCMOS process, a patented variation of silicon-on-insulator SOI technology on a sapphire substrate, offering the performance


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    PDF PE4305 PE4305

    JESD22-A10

    Abstract: JESD22-A11 JESD22A110 22-B102
    Text: RF F1633 Qualifica Q ation Rep port P Page 1 of 1 1633-PQ Q030[1], R Revision B Product Descriptio on Diffeerential DP3T SOI Switch Packa age Type Wiree-bonded QFN N, 2 x 2 x 0.5 m mm Proc cess Technollogy SOI Qualiffication # 11‐QU UAL‐1588


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    PDF F1633 1633-PQ UAL1588 JESD22A1 JESD22A110, L-05-1049 JESD22-A10 JESD22-A11 JESD22A110 22-B102

    ESD Considerations for SOI Switch Design

    Abstract: No abstract text available
    Text: ESD Considerations for SOI Switch Design Yuh-Yue Chen, Tzung-Yin Lee, Ed Lawrence, and Jeffrey Woods Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617 Email: yuhyue.chen@skyworksinc.com, Tel: 949 231-3083 This paper proposes a solution that employs transistor


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    Untitled

    Abstract: No abstract text available
    Text: The State of RF/microwave Switch Devices Pat Hindle, Microwave Journal Editor RF and microwave switches are used extensively in wireless systems for signal routing finding wide use in switching signals from antennas to the transmit and receive chains. They are one of


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    Untitled

    Abstract: No abstract text available
    Text: HWS554 SOI 0.5-3.0 GHz SP4T Switch May 2015 V2 Features Functional Block Diagram • Low Insertion Loss: 0.5 dB @ 2.7 GHz • High Isolation: 30 dB @ 2.7 GHz RF1 • Low control voltage: 1.3 to 3.0 V • No external DC blocking capacitors required RF2 RF3


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    PDF HWS554 HWS554 XQFN14L XQFN-14L

    Untitled

    Abstract: No abstract text available
    Text: HWS556 SOI 0.5-3.0 GHz SP6T Switch March 2015 V1 Features Functional Block Diagram • Low Insertion Loss: 0.55 dB @ 2.7 GHz • High Isolation: 27 dB @ 2.7 GHz RF1 • Low control voltage: 1.3 to 3.0 V • No external DC blocking capacitors required RF2 RF3


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    PDF HWS556 HWS556 XQFN14L XQFN-14L

    RF Switches Guide Signals In Smart Phones

    Abstract: No abstract text available
    Text: RF Switches Guide Signals In Smart Phones The myriad of different bands, modes, radios, and functionality found in a modern smart phone calls for the increased use of simple, high-performance RF switches as well as integrated switch modules. Kevin Walsh | September 2010


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    PDF SKY13309- 370LF SKY13323-378LF RF Switches Guide Signals In Smart Phones

    Untitled

    Abstract: No abstract text available
    Text: SPDT High Power SOI Antenna Switch CXA4011GC Description The CXA4011GC is a SPDT antenna switch for GSM/3G/LTE switching applications. The CXA4011GC has a 1.8V CMOS compatible decoder. The Sony Silicon On Insulator SOI technology is used for low insertion loss.


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    PDF CXA4011GC CXA4011GC

    Untitled

    Abstract: No abstract text available
    Text: Dual-SP3T SP3Tx2 SOI Antenna Switch CXA2947GC Description The CXA2947 is Rx power SP3Tx2 antenna switch for balanced signal switching application. The CXA2947 has a 1.8 V CMOS compatible decoder. The SONY Silicon On Insulator (SOI) technology is used for low insertion loss.


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    PDF CXA2947GC CXA2947

    Choosing the Right RF Switches for Smart Mobile Device Applications

    Abstract: No abstract text available
    Text: November 2011 Choosing the Right RF Switches for Smart Mobile Device Applications By Skyworks Solutions, Inc. Abstract: Modern smart phones and tablet computers typically incorporate multiple wireless services at different frequency bands ranging from FM radio to LTE. At the same time, an increasing number of designs utilize more than


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    RF3A

    Abstract: No abstract text available
    Text: Dual-SP4T SP4Tx2 SOI Antenna Switch CXA4410GC Description The CXA4410 is Rx power SP4Tx2 antenna switch for balanced signal switching application. The CXA4410 has a 1.8 V CMOS compatible decoder. The SONY Silicon On Insulator (SOI) technology is used for low insertion loss.


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    PDF CXA4410GC CXA4410 RF3A

    Untitled

    Abstract: No abstract text available
    Text: SPDT High Power SOI Antenna Switch CXA4011GC Description The CXA4011GC is a SPDT antenna switch for GSM/3G/LTE switching applications. The CXA4011GC has a 1.8V CMOS compatible decoder. The Sony Silicon On Insulator SOI technology is used for low insertion loss.


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    PDF CXA4011GC CXA4011GC CXA4010

    Untitled

    Abstract: No abstract text available
    Text: SP5T SOI Antenna Switch for WCDMA Diversity CXA2985GC Description The CXA2985GC is a low power SP5T antenna switch for WCDMA diversity switching applications. The CXA2985GC has a 1.8 V CMOS compatible decoder. The Sony Silicon On Insulator SOI technology is used for low insertion loss.


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    PDF CXA2985GC CXA2985GC

    Untitled

    Abstract: No abstract text available
    Text: SP4T SOI Antenna Diversity Switch, and 3G/LTE Tx Switch CXA2984GC Description The CXA2984 is the SP4T antenna diversity switch for WCDMA, and Tx switch for 3G/LTE applications. The CXA2984 has a 1.8 V CMOS compatible decoder. The SONY Silicon On Insulator SOI technology is used for low insertion loss.


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    PDF CXA2984GC CXA2984 CXA2984GC-T9

    CXA2985GC

    Abstract: CXA2985 SOI RF switch CXA29
    Text: SP5T SOI Antenna Switch for WCDMA Diversity CXA2985GC Description The CXA2985GC is a low power SP5T antenna switch for WCDMA diversity switching applications. The CXA2985GC has a 1.8 V CMOS compatible decoder. The Sony Silicon On Insulator SOI technology is used for low insertion loss.


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    PDF CXA2985GC CXA2985GC CXA2985 SOI RF switch CXA29

    CXA4

    Abstract: No abstract text available
    Text: Dual-SP4T SP4Tx2 SOI Antenna Switch CXA4410GC Description The CXA4410 is Rx power SP4Tx2 antenna switch for balanced signal switching application. The CXA4410 has a 1.8 V CMOS compatible decoder. The SONY Silicon On Insulator (SOI) technology is used for low insertion loss.


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    PDF CXA4410GC CXA4410 CXA4

    Untitled

    Abstract: No abstract text available
    Text: SP4T SOI Antenna Diversity Switch, and 3G/LTE Tx Switch CXA2984GC Description The CXA2984 is the SP4T antenna diversity switch for WCDMA, and Tx switch for 3G/LTE applications. The CXA2984 has a 1.8 V CMOS compatible decoder. The SONY Silicon On Insulator SOI technology is used for low insertion loss.


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    PDF CXA2984GC CXA2984