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    SME50VB Price and Stock

    United Chemi-Con Inc SME50VB221M10X16LL

    Cap Aluminum Lytic 220uF 63V 20% (10 X 16mm) Radial 5mm 490mA 2000h 85°C Bulk
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    Onlinecomponents.com SME50VB221M10X16LL
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    Bristol Electronics SME50VB221M10X16LL 150
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    Quest Components SME50VB221M10X16LL 120
    • 1 $4
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    SME50VB221M10X16LL 50
    • 1 $0.54
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    United Chemi-Con Inc SME50VB22RM5X11LL

    Cap Aluminum Lytic 22uF 50V 20% (5 X 11mm) Radial 2mm 95mA 2000h 85°C Bulk
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    Onlinecomponents.com SME50VB22RM5X11LL
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    United Chemi-Con Inc SME50VB2R2M5X11FT

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    Bristol Electronics SME50VB2R2M5X11FT 34,000 27
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    Chemi-Con SME50VB47RM6X11FT

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    Bristol Electronics SME50VB47RM6X11FT 15,690
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    United Chemi-Con Inc SME50VB22RM5X11FT

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    Bristol Electronics SME50VB22RM5X11FT 3,925
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    Find more SME50VB price and stock on Findchips.com

    SME50VB Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SME50VB101M8X11LL Chemi-Con Aluminum Electrolytic Capacitor; Capacitance:100uF; Capacitance Tolerance:+/- 20 %; Working Voltage, DC:50V; Terminal Type:Radial Leaded; Series:SME; Leaded Process Compatible:No; Features:Miniature; Lead Pitch:3.5mm Original PDF
    SME50VB102M16X25LL Chemi-Con 1000UF 50V 16X25 ELECTROLYTIC CAP Original PDF
    SME50VB22RM5X11LL Chemi-Con CAP., 22 MFD, 50V, ELECT., R Original PDF

    SME50VB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF284 Rev. 15, 12/2004 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier


    Original     		PDF MRF284 MRF284LR1 MRF284LSR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF284 Rev. 16, 5/2005 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier


    Original     		PDF MRF284 MRF284LR1 MRF284LSR1 MRF284

    ferroxcube for ferrite beads

    Abstract: MRF282
    Text: Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 14, 5/2005 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


    Original     		PDF MRF282 MRF282SR1 MRF282ZR1 MRF282 ferroxcube for ferrite beads

    GX03005522

    Abstract: 200S CDR33BX104AKWS MRF282SR1 MRF282ZR1 GX0300-55-22 MRF282
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFETs


    Original     		PDF MRF282/D MRF282SR1 MRF282ZR1 MRF282SR1 GX03005522 200S CDR33BX104AKWS MRF282ZR1 GX0300-55-22 MRF282

    ATC 100C

    Abstract: CDR33BX104AKWS MRF284R1 MRF284SR1 C10 PH mallory 150 series
    Text: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284R1 MRF284SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF284/D MRF284R1 MRF284SR1 MRF284R1 ATC 100C CDR33BX104AKWS MRF284SR1 C10 PH mallory 150 series

    ferroxcube ferrite beads

    Abstract: C18 ph MJD320 ferroxcube for ferrite beads Semiconductor 1346 transistor MALLORY VARIABLE CAPACITORS MRF282 100b*500x MRF282ZR1 RESISTOR AXIAL 0414
    Text: Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 15, 5/2006 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


    Original     		PDF MRF282 MRF282SR1 MRF282ZR1 MRF282SR1 ferroxcube ferrite beads C18 ph MJD320 ferroxcube for ferrite beads Semiconductor 1346 transistor MALLORY VARIABLE CAPACITORS MRF282 100b*500x MRF282ZR1 RESISTOR AXIAL 0414

    MRF284

    Abstract: wirewound resistor j10 CDR33BX104AKWS MRF284SR1 mrf284 power C10 PH
    Text: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA MRF284 MRF284SR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from


    Original     		PDF MRF284/D MRF284 MRF284SR1 MRF284 wirewound resistor j10 CDR33BX104AKWS MRF284SR1 mrf284 power C10 PH

    imd 5210

    Abstract: MJD310 RE65G1R00 MJD320 MALLORY VARIABLE CAPACITORS GX-0300-55-22 Arlon transistor z9 GX0300 27291SL
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


    Original     		PDF MRF282SR1 MRF282ZR1 imd 5210 MJD310 RE65G1R00 MJD320 MALLORY VARIABLE CAPACITORS GX-0300-55-22 Arlon transistor z9 GX0300 27291SL

    100B270JCA500X

    Abstract: 100B390JCA500X 100B201JCA500X GX03005522 MRF282
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


    Original     		PDF MRF282SR1 MRF282ZR1 100B270JCA500X 100B390JCA500X 100B201JCA500X GX03005522 MRF282

    C10 PH

    Abstract: 56-590-65-3B 369A-10
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284 MRF284SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier


    Original     		PDF MRF284 MRF284SR1 C10 PH 56-590-65-3B 369A-10

    K 3569 7.G equivalent

    Abstract: 369A-10 CDR33BX104AKWS MRF284R1 567 tone MJD32 MOTOROLA MRF284LSR1 RE60G1R00 T495X106K035AS4394 5659065-3B
    Text: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284R1 MRF284LSR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF284/D MRF284R1 MRF284LSR1 MRF284R1 K 3569 7.G equivalent 369A-10 CDR33BX104AKWS 567 tone MJD32 MOTOROLA MRF284LSR1 RE60G1R00 T495X106K035AS4394 5659065-3B

    2a258 transistor

    Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
    Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii


    Original     		PDF DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index

    369A-10

    Abstract: C10 PH dale 2000 2x12 mallory capacitor 1500 mf
    Text: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA MRF284 MRF284SR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from


    Original     		PDF MRF284/D MRF284 MRF284SR1 DEVICEMRF284/D 369A-10 C10 PH dale 2000 2x12 mallory capacitor 1500 mf

    mrf284

    Abstract: C10 PH
    Text: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284 MRF284SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF284/D MRF284 MRF284SR1 MRF284/D C10 PH

    SME Series

    Abstract: United Chemi-Con SME series UNITED CHEMI-CON SME SME 63 VB 220 M sme50Vb33 chemicon sme SME50VB10RM5X11LL SME25VB102M12X20LL
    Text: SME Series Ⅲ The SME series capacitors are our standard general purpose capacitors. These radial lead capacitors are available in a wide range of voltage and capacitance ratings and are designed for a load life of 2,000 hours at 85؇C with an operating temperature range of ‫؁‬40؇C to ‫؀‬85؇C.


    Original     		PDF SME35VB33RM5X11 SME50VB101M8X11 at20C) SME50VB102M16X25 SME100VB47RM10X16 SME Series United Chemi-Con SME series UNITED CHEMI-CON SME SME 63 VB 220 M sme50Vb33 chemicon sme SME50VB10RM5X11LL SME25VB102M12X20LL

    RE65G1R00

    Abstract: 56-590-65/3B ferroxcube ferrite beads CDR33BX104AKWS MRF282SR1 MRF282ZR1 Arlon mjd310 MRF282
    Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA MRF282SR1 MRF282ZR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at


    Original     		PDF MRF282/D MRF282SR1 MRF282ZR1 MRF282SR1 RE65G1R00 56-590-65/3B ferroxcube ferrite beads CDR33BX104AKWS MRF282ZR1 Arlon mjd310 MRF282

    RE60G1R00

    Abstract: RM73B2B682JT RM73B2B152JT SME50VB 56590653B
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284R1 MRF284LSR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier


    Original     		PDF MRF284R1 MRF284LSR1 RE60G1R00 RM73B2B682JT RM73B2B152JT SME50VB 56590653B

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF284LR1 MRF284LSR1 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF284/D MRF284LR1 MRF284LSR1 MRF284/D

    MOTOROLA SCR 1725

    Abstract: 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901
    Text: DL110/D REV 12 Wireless RF, IF and Transmitter Device Data Contents at a Glance Wireless RF, IF and Transmitter Device Data Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix Chapter One Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1–1


    Original     		PDF DL110/D MOTOROLA SCR 1725 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901

    MRF282

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at


    Original     		PDF MRF282/D MRF282SR1 MRF282ZR1 DEVICEMRF282/D MRF282

    bourns 1810

    Abstract: MRF282 C10B4 marking amplifier j02 56-590-65-3B Ferrite Beads MJD320 Variable Capacitors Arco rm73b2b120jt MALLORY tantalum CAPACITORS
    Text: Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 15, 5/2006 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


    Original     		PDF MRF282 MRF282SR1 MRF282ZR1 bourns 1810 C10B4 marking amplifier j02 56-590-65-3B Ferrite Beads MJD320 Variable Capacitors Arco rm73b2b120jt MALLORY tantalum CAPACITORS

    marking amplifier j02

    Abstract: CDR33BX104AKWS MRF284 MRF284LR1 MRF284LSR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF284 Rev. 17, 5/2006 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier


    Original     		PDF MRF284 MRF284LR1 MRF284LSR1 MRF284LR1 marking amplifier j02 CDR33BX104AKWS MRF284 MRF284LSR1

    MRF284

    Abstract: CDR33BX104AKWS MRF284LR1 MRF284LSR1
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF284LR1 MRF284LSR1 RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs


    Original     		PDF MRF284/D MRF284LR1 MRF284LSR1 20ctive MRF284LR1 MRF284 CDR33BX104AKWS MRF284LSR1

    SME35T471M10X25LL

    Abstract: SME10T47RM5X12LL UNITED CHEMI-CON SME AXIAL SME1OOT2R2M5X12LL SME35T222M16X30LL sme35t SME100T1 SME axial
    Text: SME Series UNITED CHEMI-CON The SME series capacitors are our standard general purpose capacitors offered w ith radial or axial lead terminals for selected voltage and capacitance ranges. These capacitors are designed for a load life of 2,000 hours at 85°C with an operating tem perature range of -4 0 ° C to +85°C.


    OCR Scan     		PDF SME35VB33RM5X11 SME50VB101M8X11 120Hz) SME50VB102M16X25 SME100VB47RM10X16 SME35T471M10X25LL SME10T47RM5X12LL UNITED CHEMI-CON SME AXIAL SME1OOT2R2M5X12LL SME35T222M16X30LL sme35t SME100T1 SME axial