SMD TRANSISTOR MARKING RF Search Results

transistor MAR 819

Abstract: transistor MAR 543 sl2 357 BFS17
Contextual Info: Tem ic BFS17/BFS17R Sem iconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package BFS17 Marking: El Plastic case SOT 23 1= Collector; 2= Base: 3= Emitter BFS17R Marking: E4

"marking E1"

Abstract: BFS17 BFS17R sot 23 transistor 70.2
Contextual Info: BFS17/BFS17R Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter 2 95 10527 BFS17R Marking: E4

Contextual Info: wmmt BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package 1 BFS17 Marking: E1

telefunken ta 750

Abstract: S416T smd marking l5 MARKING GA smd transistor marking L5 smd transistor marking ga transistor smd 49 transistor smd marking cu 23marking
Contextual Info: S 416 T TELEFUNKEN Semiconductors Silicon PNP planar RF transistor Applications Oscillator in VHF tuner. Features D Especially suitable for VHF oscillators D SMD package Dimensions in mm Case 23 A 3 DIN 41 869 SOT 23 Marking: GA Weight max. 0.01 g Absolute Maximum Ratings

BFS17

Abstract: transistor BFs 18 BFS17R marking E1
Contextual Info: BFS 17 / BFS 17 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter

smd diode marking 77

Abstract: CSA1532 CSC3930 transistor smd marking 107
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC3930 PIN CONFIGURATION NPN SOT-23 Formed SMD Package 1 = BASE 2 = EM ITTER 3 = COLLECTOR 3 1 2 Marking Symbol : V Complementary CSA1532

marking 415 sot23

Abstract: marking AM sot-23
Contextual Info: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC3930 PIN CONFIGURATION NPN SOT-23 Formed SMD Package 1 = BASE 2 = EM ITTER 3 = COLLECTOR 3 1 2 Marking Symbol : V

SMD TRANSISTOR MARKING 76

Abstract: smd transistor marking 54 transistor RF 98 smd RK 73 SMD smd marking codes list 722 smd transistor SMD TRANSISTOR MARKING 93 75 smd rf transistor marking SMD TRANSISTOR MARKING 86 smd transistor marking af
Contextual Info: SIEMENS Inhaltsverzeichnis Table of Contents Selection Guide. 13 RF-Transistors and MMICs.

smd transistor w1a

Abstract: smd transistor w1a 25 W1A smd transistor smd transistor gz smd transistor marking A14 SMD W1A transistor AVX tantalum marking MARKING w1a SOT-23 smd transistor w1a 50 marking code NJ SMD Transistor
Contextual Info: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the

Contextual Info: Transistors SMD Type NPN Silicon VHF/UHF Transistor MMBTH10 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 1 0.55 ● Ideal for Mixer and RF Amplifier Applications +0.1 1.3-0.1 +0.1 2.4-0.1 ● High Current Gain Bandwidth Product 0.4 3 2 +0.1 0.95-0.1

smd transistor marking A3

Abstract: smd code marking L01B transistor smd marking code c3 smd code L00B nichicon LOT date code L00B L28a smd code marking NEC rf transistor MARKING CODE L01A smd transistor M5
Contextual Info: LP2980 Micropower 50 mA Ultra Low-Dropout Regulator In SOT-23 and micro SMD Packages General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator designed specifically to meet the requirements of batterypowered applications. Using an optimized VIP Vertically Integrated PNP process, the LP2980 delivers unequaled performance in all

smd code marking L01B

Abstract: smd code L00B marking code 38 SMD Transistor L02B smd NICHICON DATE CODE MARKING smd code marking NEC capacitor marking code C3 SMD Transistor smd code marking NEC rf transistor l01b l48a
Contextual Info: LP2980 Micropower 50 mA Ultra Low-Dropout Regulator In SOT-23 and micro SMD Packages General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator designed specifically to meet the requirements of batterypowered applications. Using an optimized VIP Vertically Integrated PNP process, the LP2980 delivers unequaled performance in all

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

smd rf transistor marking

Abstract: 2SC3357 SMD smd transistor marking RE transistor 2SC3357 10 ghz transistor smd transistor marking GA RE smd 2SC3357 RF TRANSISTOR 10 GHZ low noise marking rh transistor
Contextual Info: IC Transistors SMD Type NPN Silicon RF Transistor 2SC3357 Features Low Noise and High Gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz

L00A SOT-23

Abstract: L25B smd code marking L01B l01b L00A l01b marking sot23-5 L21A SMD L31A L00B smd code L00B
Contextual Info: LP2980 Micropower 50 mA Ultra Low-Dropout Regulator In SOT-23 and micro SMD Packages General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator designed specifically to meet the requirements of battery-powered applications. Using an optimized VIP Vertically Integrated PNP process, the LP2980 delivers unequaled performance in all

l01b

Abstract: SMD sot23-5 marking E L37B L25B l48a smd code L00B L28B l00a l48b l00b marking
Contextual Info: LP2980 Micropower 50 mA Ultra Low-Dropout Regulator In SOT-23 and micro SMD Packages General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator designed specifically to meet the requirements of battery-powered applications. Using an optimized VIP Vertically Integrated PNP process, the LP2980 delivers unequaled performance in all

smd transistor M5

Abstract: L21A L37B L25B l00b
Contextual Info: LP2980 Micropower 50 mA Ultra Low-Dropout Regulator General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator designed specifically to meet the requirements of battery-powered applications. Using an optimized VIP Vertically Integrated PNP process, the LP2980 delivers unequaled performance in all

L31B

Abstract: l00b smd diode marking sot23
Contextual Info: LP2980 Micropower SOT, 50 mA Ultra Low-Dropout Regulator General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator designed specifically to meet the requirements of battery-powered applications. n n n n n n n n n n n n n Using an optimized VIP Vertically Integrated PNP process, the LP2980 delivers unequaled performance in all

smd transistor M5

Abstract: smd m5 transistor 6-pin l48a l13a L21A
Contextual Info: LP2980 Micropower SOT, 50 mA Ultra Low-Dropout Regulator General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator designed specifically to meet the requirements of battery-powered applications. n n n n n n n n n n n n n Using an optimized VIP Vertically Integrated PNP process, the LP2980 delivers unequaled performance in all

l01b regulator

Abstract: marking L01B l48a L00B SMD L31A L21A B45196 KEMET L25B smd marking m5 LP2980
Contextual Info: LP2980 Micropower 50 mA Ultra Low-Dropout Regulator General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator designed specifically to meet the requirements of battery-powered applications. Using an optimized VIP Vertically Integrated PNP process, the LP2980 delivers unequaled performance in all

zs transistor

Abstract: BFR460L3 BFS460L6 smd transistor marking zs smd transistor 6b1 smd transistor zl
Contextual Info: BFS460L6 NPN Silicon RF TWIN Transistor 4 • High fT of 22 GHz 3 5 • For low voltage / low current applications 2 6 • Ideal for VCO modules and low noise amplifiers 1 • Low noise figure: 1.1 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package

LM7805 M SMD

Abstract: LM7805 smd 8 pin LM7805 smd smd lm7805 LM7805 05 LM7805 LM7805 footprint lm7805 datasheet P221E marking us capacitor pf l1
Contextual Info: PTF210101M High Power RF LDMOS Field Effect Transistor 10 W, 2110 – 2170 MHz Description The PTF210101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 2110 to 2170 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in

SMD 6PIN IC MARKING CODE

Abstract: marking code CB SMD ic TRANSISTOR SMD MARKING CODE ce ce BFS469L6 MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE ad BFR460L3 BFR949L3 BFS360L6 marking code CB SMD tr2
Contextual Info: BFS469L6 NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications 4 • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package 3 5 2 6 1 • Built in 2 transitors TR1: die as BFR460L3, TR2: die as BFR949L3

LM7805 smd 8 pin

Abstract: LM7805 smd smd lm7805 LM7805 M SMD SMD package marking ab l16 JX900 LM7805 05 LM7805 C5 MARKING TRANSISTOR marking us capacitor pf l1
Contextual Info: PTF080101M High Power RF LDMOS Field Effect Transistor 10 W, 450 – 960 MHz Description The PTF080101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 450 MHz to 960 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in