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    SMD MARKING 1GE Search Results

    SMD MARKING 1GE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    SMD MARKING 1GE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd TRANSISTOR 1702

    Abstract: MARKING SMD TRANSISTOR DQ
    Text: PTF180901 High Power RF LDMOS FET 90 W, 1805–1880 MHz, 1930–1990 MHz Description Features The PTF180901 is a 90 W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS bands. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF180901 PTF180901 smd TRANSISTOR 1702 MARKING SMD TRANSISTOR DQ

    smd TRANSISTOR 1702

    Abstract: No abstract text available
    Text: Preliminary PTF180901A High Power RF LDMOS Field Effect Transistor 90 W, 1805 – 1880 MHz, 1930 – 1990 MHz Description The PTF180901A is a 90-watt, internally-matched GOLDMOS FET intended for EDGE applications in the DCS/PCS bands. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF180901A PTF180901A 90-watt, PTF180901A* smd TRANSISTOR 1702

    P220E

    Abstract: infineon smd package
    Text: PTF180901E PTF180901F Thermally-Enhanced High Power RF LDMOS FETs 90 W, 1805 – 1880 MHz, 1930 – 1990 MHz Description The PTF180901E and PTF180901F are thermally-enhanced, internallymatched 90-watt GOLDMOS FETs intended for EDGE applications in the DCS/PCS bands. Thermally-enhanced packaging provides the coolest


    Original     		PDF PTF180901E PTF180901F 90-watt P220E infineon smd package

    Untitled

    Abstract: No abstract text available
    Text: PTF180901 High Power RF LDMOS FET 90 W, 1805–1880 MHz, 1930–1990 MHz Description Features The PTF180901 is a 90 W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS bands. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF180901 PTF180901

    PTF082001E

    Abstract: atc 1725 LM7805 smd smd transistor infineon 106T BCP56 PTF082001F 106T capacitor
    Text: PTF082001E PTF082001F Thermally-Enhanced High Power RF LDMOS FETs 200 W, 860 – 900 MHz Description The PTF082001E and PTF082001F are 200-watt, internally-matched GOLDMOS FETs intended for CDMA and CDMA 2000 applications in the 860 to 900 MHz band. Thermally-enhanced packaging provides the coolest


    Original     		PDF PTF082001E PTF082001F PTF082001E PTF082001F 200-watt, PTF082001F* IS-95 17erous atc 1725 LM7805 smd smd transistor infineon 106T BCP56 106T capacitor

    PTF141501A

    Abstract: LM7805 smd P02B LM7805 Application Notes on LM7805 lm7805 p transistor smd marking ND smd transistor marking ND transistor 45 f 122 smd transistor bcp56
    Text: PTF141501A High Power RF LDMOS Field Effect Transistor 150 W, 1450 – 1500 MHz, 1600 – 1700 MHz Description The PTF141501A is a150-watt, GOLDMOS FET intended for DAB applications. The device is characterized for Digital Audio Broadcast operation in the 1450 to 1500 MHz band. Full gold metallization ensures excellent


    Original     		PDF PTF141501A PTF141501A a150-watt, LM7805 smd P02B LM7805 Application Notes on LM7805 lm7805 p transistor smd marking ND smd transistor marking ND transistor 45 f 122 smd transistor bcp56

    Untitled

    Abstract: No abstract text available
    Text: PTF141501A High Power RF LDMOS Field Effect Transistor 150 W, 1450 – 1500 MHz Description The PTF141501A is a150-watt, GOLDMOS FET intended for DAB applications. The device is characterized for Digital Audio Broadcast operation in the 1450 to 1500 MHz band. Full gold metallization ensures excellent


    Original     		PDF PTF141501A PTF141501A a150-watt,

    Untitled

    Abstract: No abstract text available
    Text: PTF180301E PTF180301F Thermally-Enhanced High Power RF LDMOS FETs 30 Watt, 1805 – 1880 MHz, 1930 – 1990 MHz Description The PTF180301E and PTF180301F are 30-watt, internally-matched GOLDMOS FETs intended for GSM EDGE and CDMA applications in the DCS/PCS band. Thermally-enhanced packaging provides the coolest


    Original     		PDF PTF180301E PTF180301F 30-watt, PTF180301F*

    Untitled

    Abstract: No abstract text available
    Text: Preliminary PTF081301E PTF081301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz Description The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 860 to 960 MHz band. Thermally-enhanced packaging provides the coolest


    Original     		PDF PTF081301E PTF081301F PTF081301E PTF081301F 130-watt,

    LM7805

    Abstract: PTF141501E
    Text: Preliminary PTF141501E PTF141501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1450 – 1500 MHz Description The PTF141501E and PTF141501F are thermally-enhanced 150-watt, GOLDMOS FETs intended for DAB applications. The devices are characterized for Digital Audio Broadcast operation in the 1450 to 1500 MHz


    Original     		PDF PTF141501E PTF141501F 150-watt, PTF141501E* PTF141501F* LM7805

    PTF180301E

    Abstract: LM7805 RESISTOR 2020 package 47 ohm 180301E
    Text: PTF180301E PTF180301F Thermally-Enhanced High Power RF LDMOS FETs 30 Watt, 1805 – 1880 MHz, 1930 – 1990 MHz Description The PTF180301E and PTF180301F are 30-watt, internally-matched GOLDMOS FETs intended for GSM EDGE and CDMA applications in the DCS/PCS band. Thermally-enhanced packaging provides the coolest


    Original     		PDF PTF180301E PTF180301F 30-watt, PTF180301F* LM7805 RESISTOR 2020 package 47 ohm 180301E

    LM7805 smd

    Abstract: LM7805 smd 8 pin marking us capacitor pf l1 smd marking f2 TRANSISTOR circuit of lm7805 transistor smd marking ND BCP56 LM7805 PTF080451 PTF080451E
    Text: PTF080451 LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz Description Features The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF080451 PTF080451 LM7805 smd LM7805 smd 8 pin marking us capacitor pf l1 smd marking f2 TRANSISTOR circuit of lm7805 transistor smd marking ND BCP56 LM7805 PTF080451E

    DD 127 D TRANSISTOR

    Abstract: A90W ptf080901e
    Text: PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description Features The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF080901 PTF080901 DD 127 D TRANSISTOR A90W ptf080901e

    PTF191601E

    Abstract: BCP56 LM7805 ATC 4r7 capacitor 100b
    Text: PTF191601E PTF191601F Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930 – 1990 MHz Description The PTF191601E and PTF191601F are 160-watt, internally-matched GOLDMOS FETs intended for GSM EDGE and CDMA applications in the 1930 to 1990 MHz band. Thermally-enhanced packaging provides the


    Original     		PDF PTF191601E PTF191601F PTF191601E PTF191601F 160-watt, PTF191601F* BCP56 LM7805 ATC 4r7 capacitor 100b

    smd transistor marking C14

    Abstract: transistor smd marking ds BCP56 LM7805 PTF081301E PTF081301F
    Text: PTF081301E PTF081301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz Description The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 869 to 960 MHz bands. Thermally-enhanced packaging provides the coolest


    Original     		PDF PTF081301E PTF081301F PTF081301E PTF081301F 130-watt, PTF081301F* smd transistor marking C14 transistor smd marking ds BCP56 LM7805

    LM7805 smd

    Abstract: TRANSISTOR SMD 2X K lm7805 specification transistor smd marking ND BCP56 LM7805 PTF080101S MARKING SMD transistor R11
    Text: PTF080101S Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 – 960 MHz Description The PTF080101S is a 10-watt, internally-matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Thermally-enhanced packaging provides the coolest operation possible.


    Original     		PDF PTF080101S PTF080101S 10-watt, LM7805 smd TRANSISTOR SMD 2X K lm7805 specification transistor smd marking ND BCP56 LM7805 MARKING SMD transistor R11

    LM7805

    Abstract: LM7805 smd 8 pin PTF080901 PTF080901E marking us capacitor pf l1 philips smd 1206 resistor SMD 1206 RESISTOR 100 OHMS smd marking f2 smd marking l5 transistor smd marking ND
    Text: PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description Features The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF080901 PTF080901 LM7805 LM7805 smd 8 pin PTF080901E marking us capacitor pf l1 philips smd 1206 resistor SMD 1206 RESISTOR 100 OHMS smd marking f2 smd marking l5 transistor smd marking ND

    PTF211301F

    Abstract: PTF211301E BCP56 LM7805 PTF211301A p4 smd 702 Z smd TRANSISTOR 702 Z TRANSISTOR smd
    Text: PTF211301E PTF211301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2110 – 2170 MHz Description The PTF211301E and PTF211301F are thermally-enhanced, 130watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PDF PTF211301E PTF211301F PTF211301E PTF211301F 130watt, PTF211301F* BCP56 LM7805 PTF211301A p4 smd 702 Z smd TRANSISTOR 702 Z TRANSISTOR smd

    BCP56

    Abstract: LM7805 PTF080601E PTF080601F transistor smd marking NE
    Text: PTF080601E PTF080601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 860 – 960 MHz Description PTF080601E Package 30265 The PTF080601E and PTF080601F are 60-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 860 to 960 MHz band. Thermally-enhanced packaging provides the coolest operation possible. Full gold metallization ensures excellent device lifetime


    Original     		PDF PTF080601E PTF080601F PTF080601E PTF080601F 60-watt, PTF080601F* BCP56 LM7805 transistor smd marking NE

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    MIC33163

    Abstract: voip ata soc MICREL top marking for DSC557-0344FI0T ksz8765
    Text: September 2014 Shortform Catalog Shortform Catalog September 2014 2014 Micrel, Inc. The information furnished by Micrel, Inc., in this publication is believed to be accurate and reliable. However, no responsibility is assumed by Micrel for its use, nor any infringements of patents


    Original     		PDF M0009-090514 MIC33163 voip ata soc MICREL top marking for DSC557-0344FI0T ksz8765

    sgm 8905

    Abstract: 3302 81A ir 3302 81A alcan joint compound snapdragon AKO 546 687 burglar alarm system abstract walkie talkie circuit diagram ZENER DIODES DZ 8407 tea 1601 t
    Text: December 19, 2000 Preface to the 13th Edition The Harmonized Tariff Schedule of the United States, Annotated for Statistical Reporting Purposes HTS 2001 is being published pursuant to section 1207 of the Omnibus Trade and Competitiveness Act of 1988 (P.L.


    Original     		PDF \FR\FM\21DED1 pfrm02 21DED1 sgm 8905 3302 81A ir 3302 81A alcan joint compound snapdragon AKO 546 687 burglar alarm system abstract walkie talkie circuit diagram ZENER DIODES DZ 8407 tea 1601 t

    thyristor TAG 8506

    Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
    Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y


    OCR Scan     		PDF 11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719