PTF080601F Search Results

BCP56

Abstract: LM7805 PTF080601E PTF080601F transistor smd marking NE
Contextual Info: PTF080601E PTF080601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 860 – 960 MHz Description PTF080601E Package 30265 The PTF080601E and PTF080601F are 60-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 860 to 960 MHz band. Thermally-enhanced packaging provides the coolest operation possible. Full gold metallization ensures excellent device lifetime

PTF080601

Abstract: PTF080601A PTF080601E PTF080601F 30248
Contextual Info: Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz Description Features The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.

Contextual Info: Product Brief PTF080601 GSM/EDGE/CDMA RF Power FET The PTF080601 Performance Optimized for EDGE and CDMA2000 applications, the PTF080601 is one of our new line of 860 MHz to 960 MHz devices. Typical EDGE performance for this device delivers 30 W average and 18 dB gain with