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    SMD L21 G Search Results

    SMD L21 G Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    SMD L21 G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    L21 SMD

    Abstract: smd L21 KAS31 JTp smd diode smd diode 1301 L20 SMD bas35 l21 diode marking TP50S smd diode marking t1
    Text: Diodes SMD Type General Purpose Controlled Avalanche Diodes KAS29/KAS31/KAS35 BAS29/BAS31/BAS35 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 General application +0.1 1.3-0.1 +0.1 2.4-0.1 Small plastic SMD package 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1


    Original     		PDF KAS29/KAS31/KAS35 BAS29/BAS31/BAS35) OT-23 KAS35 KAS31 KAS29 L21 SMD smd L21 KAS31 JTp smd diode smd diode 1301 L20 SMD bas35 l21 diode marking TP50S smd diode marking t1

    ir90sq045

    Abstract: mosfet 12w smd 12W SMD MOSFET 6 PIN SMD IC FOR SMPS UF4005 smd ICE2QR4765 transistor SMD 12W MOSFET IR90SQ infineon 7850 DE1E3KX102MA4BL01
    Text: Application Note, V1.0, 11 February 2010 Application Note AN- EVALQRC-ICE2QR4765 12W5V Evaluation Board with QuasiResonant CoolSET ICE2QR4765 Power Management & Supply N e v e r s t o p t h i n k i n g . Published by Infineon Technologies AG 81726 Munich, Germany


    Original     		PDF EVALQRC-ICE2QR4765 12W5V ICE2QR4765 20MHz ICE2QS01 ICE2QR4765 ICE2QS02G AN-ICE2QS01, ICE2QS01, ir90sq045 mosfet 12w smd 12W SMD MOSFET 6 PIN SMD IC FOR SMPS UF4005 smd transistor SMD 12W MOSFET IR90SQ infineon 7850 DE1E3KX102MA4BL01

    smd code marking A8 diode

    Abstract: smd diode code a8 DIODE smd marking v1 L21 SMD BAS31 l21 smd code DIODE SMD A8 smd diode A8 BAS29 BAS35
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAS29; BAS31; BAS35 General purpose controlled avalanche double diodes Product specification Philips Semiconductors Product specification General purpose controlled avalanche (double) diodes BAS29; BAS31; BAS35


    Original     		PDF M3D088 BAS29; BAS31; BAS35 BAS29 BAS31 smd code marking A8 diode smd diode code a8 DIODE smd marking v1 L21 SMD BAS31 l21 smd code DIODE SMD A8 smd diode A8 BAS29 BAS35

    Capacitor Tantal SMD

    Abstract: capacitor 0,1 k 250 mkt philips
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 1999 Jul 14 Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION


    Original     		PDF M3D427 BLF2048 OT539A) 125108/00/01/pp11 Capacitor Tantal SMD capacitor 0,1 k 250 mkt philips

    Untitled

    Abstract: No abstract text available
    Text: Product specification KAS29/KAS31/KAS35 BAS29/BAS31/BAS35 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 General application +0.1 1.3-0.1 +0.1 2.4-0.1 Small plastic SMD package 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 1.Base 2.Emitter 3.collector


    Original     		PDF KAS29/KAS31/KAS35 BAS29/BAS31/BAS35) OT-23 KAS35 KAS31 KAS29

    BAS29

    Abstract: BAS31 BAS35 MBG440
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 BAS29; BAS31; BAS35 General purpose controlled avalanche double diodes Product specification Supersedes data of November 1993 File under Discrete Semiconductors, SC01 1996 Apr 23 Philips Semiconductors


    Original     		PDF M3D088 BAS29; BAS31; BAS35 BAS29 BAS31 BAS29 BAS31 BAS35 MBG440

    capicitor

    Abstract: smd transistor 513 500 watts amplifier schematic diagram transistor SMD LOA G200 PCC103BNCT-ND smd L19
    Text: PTF 10161 165 Watts, 869–894 MHz GOLDMOS Field Effect Transistor Description The PTF 10161 is an internally matched,165 watt GOLDMOS FET intended for large signal amplifier applications from 869 to 894 MHz. It typically operates with 50% efficiency and 16 db of gain. Nitride


    Original     		PDF 220QBK-ND 1-877-GOLDMOS 1522-PTF capicitor smd transistor 513 500 watts amplifier schematic diagram transistor SMD LOA G200 PCC103BNCT-ND smd L19

    ICE3BR4765J

    Abstract: smd schottky diode sg1 ICE3B4765J 1nF CAPACITOR 250v ac smd y class DSP-301N-S008 B32560J8222M ice3b47 EF20 TRANSFORMER 4A, 50V BRIDGE-RECTIFIER NEC 22nF-400V
    Text: Application Note, V1.3, Aug 2010 AN-EVAL3BR4765J 12W 5.0V SMPS Evaluation Board with CoolSETTM F3R ICE3BR4765J Power Management & Supply N e v e r s t o p t h i n k i n g . Edition 2010-08-11 Published by Infineon Technologies Asia Pacific, 8 Kallang Sector,


    Original     		PDF AN-EVAL3BR4765J ICE3BR4765J ICE3BR4765J ICE3ARxx65J /ICE3BRxx65J smd schottky diode sg1 ICE3B4765J 1nF CAPACITOR 250v ac smd y class DSP-301N-S008 B32560J8222M ice3b47 EF20 TRANSFORMER 4A, 50V BRIDGE-RECTIFIER NEC 22nF-400V

    A82 SMD

    Abstract: marking code jg SMD diode smd diode marking jg smd diode A82 marking code JG SMD d1875 smd A82 smd code A82 BAV70-184 smd diode code F3
    Text: SMD Switching Diodes Three Terminals Part No. Peak Reverse Marking Voltage Code Max. Forward Voltage Drop @ IF VRRM (V) VF (V) IF (mA) SMD Diodes Max. Max. Diode Max. Reverse Reverse CapaciPackCurrent Recov- tance Pinout age @ VR ery Time @1MHz Diag. 0V


    Original     		PDF TWT4148S-221F5 TWT4148A-120F5 TWT4148C-121F5 TWT4148S-221WT TWT4148A-120WT TWT4148C-121WT A82 SMD marking code jg SMD diode smd diode marking jg smd diode A82 marking code JG SMD d1875 smd A82 smd code A82 BAV70-184 smd diode code F3

    AT27280

    Abstract: variable capacitor ceramic 25pF AT 0340 TEMEX LM7805 05 LM7805 smd 8 pin SMD CAPACITOR L27 smd transistor marking l6 LM7805 PTFA212002E SMD TRANSISTOR MARKING 904
    Text: PTFA212002E Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110 – 2170 MHz Description The PTFA212002E is a 200-watt, internally-matched, laterally doublediffused, GOLDMOS push-pull FET. It is characaterized for singleand two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and


    Original     		PDF PTFA212002E PTFA212002E 200-watt, AT27280 variable capacitor ceramic 25pF AT 0340 TEMEX LM7805 05 LM7805 smd 8 pin SMD CAPACITOR L27 smd transistor marking l6 LM7805 SMD TRANSISTOR MARKING 904

    smd diode A82

    Abstract: smd diode marking A3 smd code A82 DIODE smd marking A3 marking code JG SMD TWT4148A-120F5 diode SMD MARKING CODE A6
    Text: SMD Switching Diodes Three Terminals Part No. Peak Reverse Marking Voltage Code Max. Forward Voltage Drop @ IF VRRM (V) VF (V) IF (mA) SMD Diodes Max. Max. Diode Max. Reverse Reverse CapaciPackCurrent Recov- tance Pinout age @ VR ery Time @1MHz Diag. 0V


    Original     		PDF TWT4148S-221F5 TWT4148A-120F5 TWT4148C-121F5 TWT4148S-221WT TWT4148A-120WT TWT4148C-121WT smd diode A82 smd diode marking A3 smd code A82 DIODE smd marking A3 marking code JG SMD TWT4148A-120F5 diode SMD MARKING CODE A6

    Untitled

    Abstract: No abstract text available
    Text: 120 Watts, 2110-2170 MHz GOLDMOS Field Effect Transistor PTF 102003 Description Key Features The PTF 102003 is a 120–watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P-1dB and 14 dB linear gain. Full gold


    Original     		PDF 1/16W 1-877-GOLDMOS 1522-PTF

    smd code marking A8 diode

    Abstract: BAS31 BAS35 BAS29 smd diode marking v2
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAS29; BAS31; BAS35 General purpose controlled avalanche double diodes Product specification Supersedes data of 2001 Oct 10 2003 Mar 20 Philips Semiconductors Product specification General purpose controlled avalanche


    Original     		PDF M3D088 BAS29; BAS31; BAS35 BAS29 BAS31 smd code marking A8 diode BAS31 BAS35 BAS29 smd diode marking v2

    code a1 SMD

    Abstract: smd code marking A8 diode l21 smd code smd code marking WV BAS29 BAS31 BAS35
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BAS29; BAS31; BAS35 General purpose controlled avalanche double diodes Product data sheet Supersedes data of 2001 Oct 10 2003 Mar 20 NXP Semiconductors Product data sheet General purpose controlled avalanche


    Original     		PDF M3D088 BAS29; BAS31; BAS35 BAS29 BAS31 code a1 SMD smd code marking A8 diode l21 smd code smd code marking WV BAS29 BAS31 BAS35

    ICE3AR2280JZ

    Abstract: DSP-301N-S00B zener 20w smd diode 1w smd schottky diode sg1 B662061110T001 power supply driver led 20w schematic DSP-301N OPTO-coupler 816 DSP301N-S00B AN-EVAL3AR2280JZ
    Text: Application Note, V1.1, Aug 2010 AN-EVAL3AR2280JZ 20W 5V SMPS Evaluation Board with CoolSET F3R80 ICE3AR2280JZ Power Management & Supply N e v e r s t o p t h i n k i n g . Edition 2010-08-11 Published by Infineon Technologies Asia Pacific, 8 Kallang Sector,


    Original     		PDF AN-EVAL3AR2280JZ F3R80 ICE3AR2280JZ -F3R80 ICE3AR2280JZ ICE3ARxx80JZ F3R80 DSP-301N-S00B zener 20w smd diode 1w smd schottky diode sg1 B662061110T001 power supply driver led 20w schematic DSP-301N OPTO-coupler 816 DSP301N-S00B AN-EVAL3AR2280JZ

    smd transistor rc4

    Abstract: ICE3A1065ELJ smd transistor rc4 file 20kv flyback transformer DSP-301N-S008 surge lightning to smps 24V 3A SMPS circuit diagram connecting diagram for ic 7447 AN-PS0030 MBR745
    Text: Application Note, V1.1, Aug 2010 A N - E V A L 3 A 1 0 6 5 EL J 15W 5.0V SMPS Evaluation Board with CoolSET F 3 I C E 3 A 1 0 6 5 E L J Power Management & Supply N e v e r s t o p t h i n k i n g . Edition 2010-08-11 Published by Infineon Technologies Asia Pacific,


    Original     		PDF ICE3A1065ELJ ICE3Axx65ELJ AN-PS0030" smd transistor rc4 smd transistor rc4 file 20kv flyback transformer DSP-301N-S008 surge lightning to smps 24V 3A SMPS circuit diagram connecting diagram for ic 7447 AN-PS0030 MBR745

    BLF2048

    Abstract: capacitor MKT Philips PHILIPS MKT CAPACITOR PHILIPS MKT 373 MGT007 w3 smd transistor MGT014 MGT012
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification Supersedes data of 1999 Dec 01 2000 Feb 17 Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor FEATURES BLF2048


    Original     		PDF M3D427 BLF2048 OT539A 603516/09/pp12 BLF2048 capacitor MKT Philips PHILIPS MKT CAPACITOR PHILIPS MKT 373 MGT007 w3 smd transistor MGT014 MGT012

    rogers 4003 characteristics

    Abstract: No abstract text available
    Text: PTF 102003 LDMOS RF Power Field Effect Transistor 120 Watts, 2110–2170 MHz Description Key Features The PTF 102003 is a 120–watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P–1dB and 14 dB linear gain. Full gold


    Original     		PDF 1522-PTF rogers 4003 characteristics

    smd diode marking A7 SOT-23

    Abstract: SMD DIODE A6 t SOT-23 5d smd sot-23 L21 SMD marking codes sot-23 A4 A7 w sot-23 diode SOT89 smd marking A5 sod a4 marking smd diode SOT23 A6 smd diode marking A3 sot23
    Text: SMD SWITCHING DIODES DESCRIPTION • Philips Components diodes for switching applications combine the highest quality standards w ith state-of-the-art production equipm ent to fulfill the need for generic, low-cost devices. These sw itching diodes offer a broad


    OCR Scan     		PDF OT-23 OT-143 PMLL4151 PMLL4153 PMLL4446 PMLL4448 OT-223 OT-143 smd diode marking A7 SOT-23 SMD DIODE A6 t SOT-23 5d smd sot-23 L21 SMD marking codes sot-23 A4 A7 w sot-23 diode SOT89 smd marking A5 sod a4 marking smd diode SOT23 A6 smd diode marking A3 sot23

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification General purpose controlled avalanche double diodes_ FEATURES BAS29; BAS31; BAS35 PINNING • Small plastic SMD package • Switching speed: max. 50 ns • General application • Continuous reverse voltage:


    OCR Scan     		PDF BAS29; BAS31; BAS35 BAS29 BAS31 M8H32

    AY MARKING 3-PIN

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification General purpose controlled avalanche double diodes BAS29; BAS31 ; BAS35 PINNING FEATURES • Small plastic SMD package • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 90 V


    OCR Scan     		PDF BAS29; BAS31 BAS35 BAS29 BAS31; AY MARKING 3-PIN

    SMD diode C5C

    Abstract: n4148 smd code marking LF sot23 1N4148 SOD-80 diode 1n4148 smd diode 1n SMD diode SMD diode CA6 diode a 4 w Diode N4148
    Text: SMD Switching Diodes TY P E NO. CA S E D E S C R IP TIO N V ram VOLTS MAX •o <mA) BAS28 SOT-143 DUAL S W ITC H IN G DIODE, ISO LATED 85 B AS 56 C LL914 SO T-143 DUA L HIG H C U R R E N T DIO DE, ISOLATED S O D -8O L E A D L E S S SW ITC H IN G DIODE C L L2003


    OCR Scan     		PDF BAS28 BAS56 CLL914 CLL2003 CLL4150 CLL4448 CLL5001 CMPD914 CMPD1001 CMPD1001A SMD diode C5C n4148 smd code marking LF sot23 1N4148 SOD-80 diode 1n4148 smd diode 1n SMD diode SMD diode CA6 diode a 4 w Diode N4148

    smd transistor ne c2

    Abstract: smd transistor zi capacitor MKT Philips capacitor 400 MKT philips SMD Capacitor symbols transistor smd Catalogue capacitor variable ceramic variable capacitor Tekelec TO aeg b2 60 52 30
    Text: DISCRETE SEMICONDUCTORS E>^m S ln lE E T BLF2048 UHF push-pull power LDMOS transistor Preliminary specification Supersedes data of 1999 Dec 01 Philips Sem iconductors 2000 Feb 17 PHILIPS Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor


    OCR Scan     		PDF BLF2048 OT539A smd transistor ne c2 smd transistor zi capacitor MKT Philips capacitor 400 MKT philips SMD Capacitor symbols transistor smd Catalogue capacitor variable ceramic variable capacitor Tekelec TO aeg b2 60 52 30

    smd transistor l32

    Abstract: SMD Transistor SAs transistor SMD t30 sas smd transistor SMD l32 Transistor SMD L31 SMD CAPACITOR L29 SMD Transistor t30 SMD electrolytic capacitor SMD CAPACITOR L27
    Text: Philips Semiconductors Product specification UHF push-pull power transistor BLV945B FEATURES DESCRIPTION • Double internal input matching for easy matching and high gain Two NPN silicon planar epitaxial transistors in push-pull configuration, intended for linear common emitter


    OCR Scan     		PDF BLV945B OT324 OT324 7110fl2fc. OT324. ocn23ia smd transistor l32 SMD Transistor SAs transistor SMD t30 sas smd transistor SMD l32 Transistor SMD L31 SMD CAPACITOR L29 SMD Transistor t30 SMD electrolytic capacitor SMD CAPACITOR L27