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    SMD BR 17 Search Results

    SMD BR 17 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    SMD BR 17 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SMD15N05

    Abstract: SMU15N05
    Text: SMD/SMU15N05 Siliconix NĆChannel EnhancementĆMode Transistors 175_C Maximum Junction Temperature Product Summary V BR DSS (V) rDS(on) (W) IDa (A) 50 0.10 15 TOĆ251 D TOĆ252 G Drain connected to Tab G D S Top View Order Number: G SMD15N05 D S S Top View


    Original     		SMD/SMU15N05 SMD15N05 SMU15N05 P36850Rev. SMD15N05 SMU15N05 PDF

    JTs smd diode

    Abstract: SMD15N05 SMU15N05 TD 33b 25A15
    Text: Temic SMD/SMU15N05 Siliconix N-Channel Enhancement-Mode Transistors 175 °C Maximum Junction Temperature Product Summary tDa A 15 r DS(on) (Q ) 0.10 V (BR)DSS (V) 50 TO-251 TO-252 o in D O O rO Drain connected to Thb G D S Top View Order Number: SMD15N05


    OCR Scan     		smd/smu15n05 O-251 O-252 SMD15N05 SMU15N05 SMD15N05 SMU15N05 P-36850â JTs smd diode TD 33b 25A15 PDF

    beta 3435

    Abstract: QT06015-054 3773 SMD 142012 76118 202F NTC Thermistor 301
    Text: .019 .002 .039 .002 ELECTRICAL CHARACTERISTICS: R25C=10,000 OHMS 1% BETA=3435 OPERATING TEMPERATURE: -40C TO 125C DISSIPATION CONSTANT: 2.5 mW/C MIN POWER RATING: 250mW AT 25C .019 .002 NOTES: SMD 0402 PACKAGE DRAWN INITIAL DATE BR 11/24/2009 2108 CENTURY WAY


    Original     		250mW beta 3435 QT06015-054 3773 SMD 142012 76118 202F NTC Thermistor 301 PDF

    49319

    Abstract: 62277 175656 QT06015-055 smd 4468
    Text: .031 .004 .063 .004 ELECTRICAL CHARACTERISTICS: R25C=10,000 OHMS 1% BETA=4100 OPERATING TEMPERATURE: -40C TO 125C DISSIPATION CONSTANT: 3.5 mW/C MIN POWER RATING: 350mW AT 25C .037 .004 NOTES: SMD 0603 PACKAGE DRAWN INITIAL DATE BR 11/24/2009 2108 CENTURY WAY


    Original     		350mW 49319 62277 175656 QT06015-055 smd 4468 PDF

    SMD15N

    Abstract: No abstract text available
    Text: Tem ic SMD/SMU15N05 Siliconix N-Channel Enhancement-Mode Transistors 175 °C Maximum Junction Temperature Product Summary V BR DSS (V) r DS(on) (Q ) Id3 (A) 50 0.10 15 TO-251 TO-252 o —im o FT] G D D rain connected to Tab S Ô Top View O rder Number: G SMD15N05


    OCR Scan     		SMD/SMU15N05 O-251 O-252 SMD15N05 SMU15N05 P-36850--Rev. 06/06A SMD15N PDF

    GSIB-5S

    Abstract: E54214 EDF1yM EDF1yS TO-269AA GBPC12-35W MBXM g2sb
    Text: Bridge Rectifiers Vishay Semiconductors IF AV (A) 0.5 0.9 1.0 1.5 2.0 3.0 4.0 TYPE V(BR) RANGE (V) PACKAGE DEVICE(1) (7) SOURCE (3) FAMILY MAX VF(5) @ IF (V) (A) MBxM G Mini-bridge MBM 200 - 600 1.0 0.4 MBxS G Mini-bridge (SMD) MBS (TO-269AA) 200 - 600 1.0


    Original     		O-269AA) BxxC800G BxxC1000G GSIB25xx GBPC35xxW GBPC12-35W E54214 04-Nov-02 GSIB-5S E54214 EDF1yM EDF1yS TO-269AA GBPC12-35W MBXM g2sb PDF

    SMD15N05

    Abstract: SMU15N05
    Text: Tem ic SMD/SMU15N05 Semiconductors N-Channel Enhancement-Mode Transistors Product Summary V BR DSS 50 (V) IDa (A) r DS(on) ( ^ ) 0.10 15 TO-251 D O TO-252 o o TT Drain connected to Tab G D S Top View Order Number: SMD15N05 Ô s G D S Top View Order Number:


    OCR Scan     		SMD/SMU15N05 O-251 O-252 SMD15N05 SMU15N05 P-36850--Rev. 06-Jun-94 SMD15N05 SMU15N05 PDF

    SMD15N05

    Abstract: SMU15n05
    Text: SMD/SMU15N05 N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) IDa (A) 50 0.10 15 TO-251 D TO-252 G Drain connected to Tab G D S Top View S Order Number: G SMD15N05 D S N-Channel MOSFET Top View Order Number: SMU15N05 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		SMD/SMU15N05 O-251 O-252 SMD15N05 SMU15N05 P-36850--Rev. 06-Jun-94 SMD15N05 SMU15n05 PDF

    SMU15N05

    Abstract: SMD15N05
    Text: SMD/SMU15N05 N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) IDa (A) 50 0.10 15 TO-251 D TO-252 G Drain connected to Tab G D S Top View S Order Number: G SMD15N05 D S N-Channel MOSFET Top View Order Number: SMU15N05 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		SMD/SMU15N05 O-251 O-252 SMD15N05 SMU15N05 P-36850--Rev. 06-Jun-94 SMU15N05 SMD15N05 PDF

    smd code YL 69

    Abstract: 34 marking code zd smd WY SMD tr zy 406 YM 294 SMD MARKING CODE 833 yd 803 rohs wy smd transistor marking code YS SMD smd diode code WP
    Text: SMD Transient Voltage Suppressor SMD Diodes Specialist TV04A5V0-G Thru. TV04A171-G Working Peak Reverse Voltage: 5.0 to 170 Volts Power Dissipation: 400 Watts RoHS Device Features DO-214AC SMA -Ideal for surface mount applications. -Easy pick and place.


    Original     		TV04A5V0-G TV04A171-G DO-214AC DO-214AC, TV04A151J TV04A161K TV04A161J TV04A171K TV04A171J QW-BTV01 smd code YL 69 34 marking code zd smd WY SMD tr zy 406 YM 294 SMD MARKING CODE 833 yd 803 rohs wy smd transistor marking code YS SMD smd diode code WP PDF

    4n0609

    Abstract: F45A IPB45N06S4-09 IPI45N06S4-09 IPP45N06S4-09 PG-TO263-3-2 4N06
    Text: IPB45N06S4-09 IPI45N06S4-09, IPP45N06S4-09 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 9.2 mΩ ID 45 A Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPB45N06S4-09 IPI45N06S4-09, IPP45N06S4-09 PG-TO263-3-2 4N0609 IPI45N06S4-09 PG-TO262-3-1 4n0609 F45A IPB45N06S4-09 IPI45N06S4-09 IPP45N06S4-09 PG-TO263-3-2 4N06 PDF

    4N03L03

    Abstract: 4n03l02 IPB80N03S4L-02 4n03L
    Text: IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary Features V DS 30 V R DS on ,max 2.4 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 PG-TO262-3-1 PG-TO263-3-2 PG-TO220-3-1 IPI80N03S4L-03 PG-TO263-3-2 4N03L03 4n03l02 4n03L PDF

    4N03L02

    Abstract: No abstract text available
    Text: IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary Features V DS 30 V R DS on ,max 2.4 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N03L02 IPI80N03S4L-03 4N03L02 PDF

    Untitled

    Abstract: No abstract text available
    Text: COMCHIP SMD Transient Voltage Suppressor SMD Diodes Specialist TV30C5V0-G Thru. TV30C171-G Working Peak Reverse Voltage: 5.0 to 170 Volts Power Dissipation: 3000 Watts RoHS Device Features DO-214AB SMC -Ideally for surface mount applications. -Easy pick and place.


    Original     		TV30C5V0-G TV30C171-G DO-214AB TV30C151J TV30C161K TV30C161J TV30C171K TV30C171J QW-BTV04 PDF

    Untitled

    Abstract: No abstract text available
    Text: Final Data Sheet OptiMOS -P2 Power-Transistor IPB180P04P4-03 Product Summary V DS -40 V R DS on 2.8 mW ID -180 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPB180P04P4-03 PG-TO263-7-3 4QP0403 -10V2) PDF

    npn smd 3a

    Abstract: power transistor Ic 4A datasheet NPN smd FZT1048A 5a SMD Transistor
    Text: Transistors SMD Type NPN Silicon Planar Medium Power High Gain Transistor FZT1048A SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 VCEO = 17.5V. 5 Amp continuous current. +0.1 3.00-0.1 +0.15 1.65-0.15 Features Unit: mm +0.2 0.90-0.2 +0.3 7.00-0.3


    Original     		FZT1048A OT-223 50MHz npn smd 3a power transistor Ic 4A datasheet NPN smd FZT1048A 5a SMD Transistor PDF

    npn smd 3a

    Abstract: SMD BR 17 smd 2a ic SMD TRANSISTOR MARKING 2A 2A marking transistor npn smd 2a smd transistor 2A smd transistor marking br FCX1051A
    Text: Transistors SMD Type NPN Silicon Power Switching Transistor FCX1051A Features 2W power dissipation. 10A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 17mv Typ. Extremely low equivalent on-resistance.


    Original     		FCX1051A 100MHz npn smd 3a SMD BR 17 smd 2a ic SMD TRANSISTOR MARKING 2A 2A marking transistor npn smd 2a smd transistor 2A smd transistor marking br FCX1051A PDF

    IPB180P04

    Abstract: ipb180p D180A IPB180P04P4-03 SMD MARKING QG 6 PIN 73 marking ipb180p04p4
    Text: Final Data Sheet OptiMOS -P2 Power-Transistor IPB180P04P4-03 Product Summary V DS -40 V R DS on 2.8 mW ID -180 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPB180P04P4-03 PG-TO263-7-3 4QP0403 -10V2) IPB180P04 ipb180p D180A IPB180P04P4-03 SMD MARKING QG 6 PIN 73 marking ipb180p04p4 PDF

    4N06H1

    Abstract: IPB180N06S4-H1 D180A PG-TO263-7-3 TO263-7 4N06 SMD Diode
    Text: IPB180N06S4-H1 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max 1.7 mΩ ID 180 A Features PG-TO263-7-3 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		IPB180N06S4-H1 PG-TO263-7-3 4N06H1 4N06H1 IPB180N06S4-H1 D180A PG-TO263-7-3 TO263-7 4N06 SMD Diode PDF

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification FZT1048A SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 VCEO = 17.5V. 5 Amp continuous current. +0.1 3.00-0.1 +0.15 1.65-0.15 Features Unit: mm +0.2 0.90-0.2 +0.3 7.00-0.3 20 Amp pulse current. 4 Low saturation voltage.


    Original     		FZT1048A OT-223 50MHz PDF

    IPP17N25S3-100

    Abstract: No abstract text available
    Text: IPB17N25S3-100 IPP17N25S3-100 OptiMOS -T Power-Transistor Product Summary VDS 250 V RDS on ,max 100 mW ID 17 A Features PG-TO263-3-2 • N-channel - Enhancement mode PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPB17N25S3-100 IPP17N25S3-100 PG-TO263-3-2 PG-TO220-3-1 3N25100 IPP17N25S3-100 PDF

    2n08l07

    Abstract: 2N08L07 POWER IPP80N08S2L-07 2n08l07 marking IPB80N08S2L-07 2n08l "2N08L07" 2n08 ANPS071E PG-TO263-3-2
    Text: IPB80N08S2L-07 IPP80N08S2L-07 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 75 V R DS on ,max (SMD version) 6.8 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPB80N08S2L-07 IPP80N08S2L-07 PG-TO263-3-2 PG-TO220-3-1 SP0002-19051 2N08L07 2n08l07 2N08L07 POWER IPP80N08S2L-07 2n08l07 marking IPB80N08S2L-07 2n08l "2N08L07" 2n08 ANPS071E PG-TO263-3-2 PDF

    PN04L03

    Abstract: smd diode code gs Application Note ANPS071E ANPS071E marking CODE R SMD DIODE smd diode marking 77 SMD MARKING CODE SMD MARKING CODE 102 smd TR marking code G11 TRANSISTOR SMD MARKING CODE 42
    Text: IPB100N04S2L-03 IPP100N04S2L-03 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.0 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPB100N04S2L-03 IPP100N04S2L-03 PG-TO263-3-2 PG-TO220-3-1 SP0002-19065 PN04L03 PN04L03 smd diode code gs Application Note ANPS071E ANPS071E marking CODE R SMD DIODE smd diode marking 77 SMD MARKING CODE SMD MARKING CODE 102 smd TR marking code G11 TRANSISTOR SMD MARKING CODE 42 PDF

    PN08L07

    Abstract: Diode smd 86 OPTIMOS SMD MARKING CODE PN08L07 S Application Note ANPS071E marking CODE R SMD DIODE SMD MARKING CODE 102 TRANSISTOR SMD MARKING CODE ag IPB100N08S2L-07
    Text: IPB100N08S2L-07 IPP100N08S2L-07 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 75 V R DS on ,max (SMD version) 6.5 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPB100N08S2L-07 IPP100N08S2L-07 PG-TO263-3-2 PG-TO220-3-1 SP0002-19053 PN08L07 PN08L07 Diode smd 86 OPTIMOS SMD MARKING CODE PN08L07 S Application Note ANPS071E marking CODE R SMD DIODE SMD MARKING CODE 102 TRANSISTOR SMD MARKING CODE ag IPB100N08S2L-07 PDF