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    SMBT 3904S Price and Stock

    Infineon Technologies AG SMBT3904SE6327HTSA1

    TRANS 2NPN 40V 0.2A PG-SOT363-PO
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    DigiKey SMBT3904SE6327HTSA1 Reel
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    Infineon Technologies AG SMBT3904SH6327XTSA1

    TRANS 2NPN 40V 0.2A PG-SOT363-PO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SMBT3904SH6327XTSA1 Reel 24,000
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    Verical SMBT3904SH6327XTSA1 72,000 24,000
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    TME SMBT3904SH6327XTSA1 113 25
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    • 100 $0.0601
    • 1000 $0.0504
    • 10000 $0.0468
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    EBV Elektronik SMBT3904SH6327XTSA1 12,000 5 Weeks 3,000
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    New Advantage Corporation SMBT3904SH6327XTSA1 9,000 1
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    Vyrian SMBT3904SH6327XTSA1 11,832
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    Infineon Technologies AG SMBT3904SH6327XTSA

    Trans GP BJT NPN 40V 0.2A 6-Pin SOT-363 T/R - Tape and Reel (Alt: SMBT3904SH6327XTSA1)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SMBT3904SH6327XTSA Reel 4 Weeks 24,000
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    Infineon Technologies AG SMBT 3904S H6327

    Bipolar Transistors - BJT AF TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SMBT 3904S H6327 6,418
    • 1 $0.38
    • 10 $0.262
    • 100 $0.166
    • 1000 $0.075
    • 10000 $0.049
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    Infineon Technologies AG SMBT3904S H6327

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    Bristol Electronics SMBT3904S H6327 3,000
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    Quest Components SMBT3904S H6327 2,400
    • 1 $0.456
    • 10 $0.456
    • 100 $0.2052
    • 1000 $0.1368
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    Find more SMBT 3904S price and stock on Findchips.com

    SMBT 3904S Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SMBT 3904S Infineon Technologies Dual AF Transistor Arrays for General Purpose Applications Original PDF
    SMBT3904S Infineon Technologies NPN Silicon Switching Transistor Array Original PDF
    SMBT3904S Infineon Technologies Fast Switching Transistors; Package: PG-SOT363-6; Polarity: NPN; VCEO (max): 40.0 V; Ptot (max): 250.0 mW; hFE (min): 100.0 - 300.0; IC: 10.0 mA; Original PDF
    SMBT3904S Infineon Technologies NPN Silicon Switching Transistor Array with high DC current gain Original PDF
    SMBT3904S Infineon Technologies Dual AF Transistor Arrays for General Purpose Applications Original PDF
    SMBT3904S Siemens NPN Silicon Switching Transistor Array Original PDF
    SMBT3904S Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    SMBT3904S Siemens Cross Reference Guide 1998 Original PDF
    SMBT3904SE6327 Infineon Technologies Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRANS DUAL NPN 40V 200MA SOT363 Original PDF
    SMBT3904SE6327HTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays - TRANS 2NPN 40V 0.2A SOT363 Original PDF
    SMBT3904SH6327 Infineon Technologies Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRANS DUAL NPN 40V 200MA SOT363 Original PDF
    SMBT3904SH6327XTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays - TRANS 2NPN 40V 0.2A SOT363 Original PDF

    SMBT 3904S Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ic power 22E

    Abstract: 3904S SMBT 3904S 1N916 VPS05604
    Text: SMBT 3904S NPN Silicon Switching Transistor Array 4  High DC current gain: 0.1mA to 100mA 5 6  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package  Complementary type: SMBT 3906S (PNP)


    Original     		3904S 100mA 3906S VPS05604 EHA07178 OT-363 EHP00763 EHP00764 Oct-14-1999 ic power 22E 3904S SMBT 3904S 1N916 VPS05604 PDF

    6c2 transistor

    Abstract: No abstract text available
    Text: SIEMENS SMBT 3906S PNP Silicon Switching Transistor Array 4 High DC current gain: 0.1mA to 100mA Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with high matching in one package Complementary type: SMBT 3904S (NPN) 2


    OCR Scan     		100mA 3904S 3906S VPS05604 3906S Q62702-A1202 EHA07173 OT-363 EHP00767 EHP00770 6c2 transistor PDF

    Q62702-A1202

    Abstract: SMBT 3904S 1N916 3904S VPS05604
    Text: SMBT 3906S PNP Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 • Low collector-emitter saturation voltage 6 • Two galvanic internal isolated Transistors with high matching in one package • Complementary type: SMBT 3904S (NPN)


    Original     		3906S 100mA 3904S VPS05604 OT-363 Q62702-A1202 EHP00773 EHP00764 Sep-07-1998 Q62702-A1202 SMBT 3904S 1N916 3904S VPS05604 PDF

    3904S

    Abstract: 3904 1N916 Q62702-A1201 VPS05604 5b1 transistor VPS0560
    Text: SMBT 3904S NPN Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 • Low collector-emitter saturation voltage 6 • Two galvanic internal isolated Transistors with high matching in one package • Complementary type: SMBT 3906S (PNP)


    Original     		3904S 100mA 3906S VPS05604 OT-363 Q62702-A1201 EHP00764 Sep-07-1998 3904S 3904 1N916 Q62702-A1201 VPS05604 5b1 transistor VPS0560 PDF

    th 2267

    Abstract: No abstract text available
    Text: SIEMENS SMBT 3906S PNP Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package • Complementary type: SMBT 3904S (NPN)


    OCR Scan     		3906S 100mA 3904S Q62702-A1202 OT-363 flE35b05 Q1225S2 th 2267 PDF

    ic power 22E

    Abstract: SMBT 3904S 1N916 3904S VPS05604
    Text: SMBT 3906S PNP Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package • Complementary type: SMBT 3904S (NPN)


    Original     		3906S 100mA 3904S VPS05604 EHA07175 OT-363 EHP00773 EHP00764 Jan-26-1998 ic power 22E SMBT 3904S 1N916 3904S VPS05604 PDF

    3904S

    Abstract: wi fi marking code transistor HK
    Text: SIEMENS SMBT 3904S NPN Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 • Low collector-emitter saturation voltage 6 ^ ^ • Two galvanic internal isolated Transistors with high matching in one package • Complementary type: SM BT 3906S (PNP)


    OCR Scan     		3904S 100mA 3906S VPS05604 EHA07178 Q62702-A1201 OT-363 3904S wi fi marking code transistor HK PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SMBT 3904S NPN Silicon Switching Transistor Array 4 • High DC current gain: 0.1 mA to 100m A • Low collector-em itter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package • C om plem entary type: SM BT 3906S (PNP)


    OCR Scan     		3904S 3906S VPS05604 EHA07178 Q62702-A1201 OT-363 EHP00756 PDF

    transistor Bc 540

    Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W


    Original     		0-02V 0-03W 3-02V 3-02W 3-03W 3-04W 3-05W 3-06W 4-02V 4-02W transistor Bc 540 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89 PDF

    transistor C639

    Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W


    Original     		3-02W 3-03W 3-04W 3-05W 3-06W 4-02W 4-03W 4-04W 4-05W 4-06W transistor C639 c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor PDF

    MARKING 68W SOT-23

    Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
    Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06


    Original     		25-04W 25-05W 25-06W 25-07W 3904S 846AT 846BW 846BT 847AT 847BW MARKING 68W SOT-23 marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23 PDF

    sot23 s1a marking

    Abstract: No abstract text available
    Text: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906


    Original     		SMBT3904. MMBT3904 SMBT3904S: SMBT3906. MMBT3906 SMBT3904/MMBT3904 SMBT3904S OT363 E6433 sot23 s1a marking PDF

    2907A PNP bipolar transistors

    Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
    Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original     		O-92d 2907A PNP bipolar transistors BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846 PDF

    2907A PNP bipolar transistors

    Abstract: diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT
    Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		OT-23 OT-143 2907A PNP bipolar transistors diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT PDF

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 PDF